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1. 发明申请

WO1998052279A1 ELASTIC WAVE DEVICE 审中-公开
标题翻译：弹性波装置
公开(公告)号：WO1998052279A1
公开(公告)日：1998-11-19
申请号：PCT/JP1997001584
申请日：1997-05-12
申请人： HITACHI, LTD. , ISOBE, Atsushi , HIKITA, Mitsutaka , SHIBAGAKI, Nobuhiko , ASAI, Kengo , TAKUBO, Chisaki
发明人： HITACHI, LTD.
IPC分类号： H03H09/145
CPC分类号： H03H9/1064 , H03H3/08 , H03H9/0222 , H03H9/0542 , H03H9/0585 , H03H9/059
摘要： In order to realize a subminiature elastic wave device, which has an electric property comparable to at least that of a conventional elastic surface wave device and of which reliability is not degraded even when undergoing resin sealing or bare chip packaging, an elastic boundary wave device of three-medium construction, in which films (29, 30) of two or more kinds are formed on a piezoelectric substrate (28), is excited. Formed on the piezoelectric substrate formed with an interdigital electrode (14) are a polycrystal silicon dioxide film (29) and a polycrystal silicon film (30). The piezoelectric substrate is formed from a single crystal substance. The polycrystal silicon dioxide film and the polycrystal silicon film are formed as by a sputtering method, CVD method and a coating method. Formation of the polycrystal silicon film enables elastic wave excited by the interdigital electrode to be confined to the polycrystal silicon dioxide film, and even when the polycrystal silicon film is deteriorated in its film quality, the elastic boundary wave device exhibits an electric property superior to that of a conventional elastic surface wave device. Also, since the polycrystal silicon dioxide film and the polycrystal silicon film protect the interdigital electrode, the elastic boundary wave device can have a high reliability.
摘要翻译：为了实现具有与现有的弹性表面波装置相当的电性能的即使在进行树脂密封或裸芯片封装的情况下也不降低可靠性的超小型弹性波器件，弹性边界波器件在压电基板（28）上形成有两种以上的膜（29,30）的三介质结构被激发。在形成有交叉指状电极（14）的压电基板上形成多晶硅二氧化硅膜（29）和多晶硅膜（30）。压电基板由单晶物质形成。通过溅射法，CVD法和涂布法形成多晶硅二氧化硅膜和多晶硅膜。多晶硅膜的形成使得由叉指电极激发的弹性波被限制在多晶硅二氧化硅膜中，即使当多晶硅膜的膜质量劣化时，弹性边界波器件的电性能优于的常规弹性表面波装置。此外，由于多晶硅二氧化硅膜和多晶硅膜保护叉指电极，所以弹性边界波装置可以具有高的可靠性。

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