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1. 发明申请

WO2010049794A1 PRESSURE SENSOR AND WIRE GUIDE ASSEMBLY 审中-公开
标题翻译：压力传感器和导线总成
公开(公告)号：WO2010049794A1
公开(公告)日：2010-05-06
申请号：PCT/IB2009/007256
申请日：2009-10-28
申请人： RADI MEDICAL SYSTEMS AB , TIENSUU, Stefan , RYDBERG, Matts , JÖNSSON, Mats
发明人： TIENSUU, Stefan , RYDBERG, Matts , JÖNSSON, Mats
IPC分类号： A61B5/0215 , G01L7/08 , G01L9/00
CPC分类号： G01L9/0054 , A61B5/0215 , A61B5/6851 , A61B2560/0242 , A61B2560/0252 , A61B2562/0247 , A61M2025/0002 , A61M2025/09183 , A61M2205/3344 , G01L9/0042 , G01L9/0073 , G01L19/0092
摘要： A pressure sensor chip is described. The pressure sensor chip includes a substrate, a polycrystalline silicon layer, at least one silicon layer, and a diaphragm movement element. The polycrystalline silicon layer is formed on the substrate and has a cavity recess formed therein. The at least one silicon layer is formed on the polycrystalline silicon layer and covers the cavity recess thereby forming a reference chamber with a diaphragm. The diaphragm movement element is configured to sense movement of the diaphragm. An assembly incorporating the pressure sensor chip and a method of forming the pressure sensor chip are also described.
摘要翻译：描述压力传感器芯片。压力传感器芯片包括基板，多晶硅层，至少一个硅层和隔膜移动元件。多晶硅层形成在基板上并形成有腔凹部。至少一个硅层形成在多晶硅层上并覆盖空腔凹部，从而形成具有隔膜的参考室。隔膜运动元件构造成感测隔膜的运动。还描述了包括压力传感器芯片的组件和形成压力传感器芯片的方法。

2. 发明申请

WO1997010606A1 A POLYSILICON RESISTOR AND A METHOD OF MANUFACTURING IT 审中-公开
标题翻译：多晶硅电阻及其制造方法
公开(公告)号：WO1997010606A1
公开(公告)日：1997-03-20
申请号：PCT/SE1996001148
申请日：1996-09-13
申请人： TELEFONAKTIEBOLAGET LM ERICSSON (publ) , SMITH, Ulf , RYDBERG, Matts , HANSSON, Håkan
发明人： TELEFONAKTIEBOLAGET LM ERICSSON (publ)
IPC分类号： H01C07/00
CPC分类号： H01L28/20
摘要： A resistor has a resistor body (11) of polycrystalline silicon and electrical terminals (23, 15) arranged on and/or in the resistor body (11), so that a resistor portion (13) is formed between the terminals and produces the useful resistance of the resistor. The material of the resistor body is doped with dopants of both acceptor type and donor type. In order to block the charge carrier traps at grain boundaries to a sufficient degree and thereby give the resistor a good stability, also when it is exposed to different substances during the manufacture, the doping is made with donors in such a high concentration, that if only the donor atoms would be present in the material and substantially no acceptor atoms, the material would be to be considered as more or less heavily doped. In particular donor atoms are to be provided in the resistor body in a concentration of at least 3 10 cm , in the case where the material has an average grain size of 1000 ANGSTROM and phosphorus is used as a dopant of donor type.
摘要翻译：电阻器具有设置在电阻体（11）上和/或电阻体（11）上的多晶硅电连接体（11）和电端子（23,15），从而在端子之间形成电阻部分（13），并产生有用的电阻的电阻。电阻体的材料掺杂有受体型和给体型的掺杂剂。为了在晶界处阻挡充电载流子陷阱足够的程度，从而使电阻器具有良好的稳定性，而且当制造过程中暴露于不同的物质时，也会以如此高的浓度与供体进行掺杂，如果只有供体原子将存在于材料中并且基本上不存在受体原子，该材料将被认为是或多或少重掺杂。特别是在电阻体中以至少3×10 19 cm -3的浓度提供施主原子，在该材料的平均晶粒尺寸为1000并使用磷的情况下作为供体类型的掺杂剂。

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