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1. 发明申请

WO2007022538A3 TEST PADS FOR MEASURING PROPERTIES OF A WAFER 审中-公开
标题翻译：测量垫片性能的测试垫
公开(公告)号：WO2007022538A3
公开(公告)日：2009-04-23
申请号：PCT/US2006032822
申请日：2006-08-21
申请人： KLA TENCOR TECH CORP , SHI JIANOU , ZHANG XIAFANG , PEI SHIYOU , HUANG SHU CHUN , YEH DENNIS , RZEPIELA JEFFREY A , FENG YIPING , KHAN AHMAD , KAGAN ALEXANDER , EDELSTEIN SERGIO
发明人： SHI JIANOU , ZHANG XIAFANG , PEI SHIYOU , HUANG SHU CHUN , YEH DENNIS , RZEPIELA JEFFREY A , FENG YIPING , KHAN AHMAD , KAGAN ALEXANDER , EDELSTEIN SERGIO
IPC分类号： G01R31/02
CPC分类号： G01R31/2831 , G01R31/2856 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： Test pads, methods, and systems for measuring properties of a wafer are provided. One test pad formed on a wafer includes a test structure configured such that one or more electrical properties of the test structure can be measured. The test pad also includes a conductive layer formed between the test structure and the wafer. The conductive layer prevents structures located under the test structure between the conductive layer and the wafer from affecting the one or more electrical properties of the test structure during measurement. One method for assessing plasma damage of a wafer includes measuring one or more electrical properties of a test structure formed on the wafer and determining an index characterizing the plasma damage of the test structure using the one or more electrical properties. In addition, systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.
摘要翻译：提供了用于测量晶片性能的测试垫，方法和系统。形成在晶片上的一个测试焊盘包括测试结构，其被配置为使得可以测量测试结构的一个或多个电特性。测试垫还包括在测试结构和晶片之间形成的导电层。导电层防止在测量期间位于导电层和晶片之间的测试结构下方的结构影响测试结构的一个或多个电性能。用于评估晶片的等离子体损伤的一种方法包括测量形成在晶片上的测试结构的一个或多个电特性，并使用一个或多个电性质确定表征测试结构的等离子体损伤的指标。此外，提供了用于控制晶片上的电荷沉积以测量晶片的一个或多个电性能的系统和方法。一个系统包括配置成将电荷沉积在晶片上的电晕源和配置成测量电晕源内的一个或多个条件的传感器。该系统还包括配置为基于一个或多个条件来改变电晕源的一个或多个参数的控制子系统。另一种系统包括电晕源，其被配置为在电荷沉积期间将电荷沉积在晶片上以及布置在电晕源的放电室内的气体混合物。气体混合物改变沉积在晶片上的电荷的一个或多个参数。

2. 发明申请

WO2007022538A2 TEST PADS, METHODS AND SYSTEMS FOR MEASURING PROPERTIES OF A WAFER, AND SYSTEMS AND METHODS FOR CONTROLLING DEPOSITION OF A CHARGE ON A WAFER FOR MEASUREMENT OF ONE OR MORE ELECTRICAL PROPERTIES OF THE WAFER 审中-公开
标题翻译：用于测量波形特性的测试垫，方法和系统，以及用于控制在波形上沉积电荷以测量一个或更多个电流特性的系统和方法
公开(公告)号：WO2007022538A2
公开(公告)日：2007-02-22
申请号：PCT/US2006/032822
申请日：2006-08-21
申请人： KLA-TENCOR TECHNOLOGIES CORPORATION , SHI, Jianou , ZHANG, Xiafang , PEI, Shiyou , HUANG, Shu, Chun , YEH, Dennis , RZEPIELA, Jeffrey, A. , FENG, Yiping , KHAN, Ahmad , KAGAN, Alexander , EDELSTEIN, Sergio
发明人： SHI, Jianou , ZHANG, Xiafang , PEI, Shiyou , HUANG, Shu, Chun , YEH, Dennis , RZEPIELA, Jeffrey, A. , FENG, Yiping , KHAN, Ahmad , KAGAN, Alexander , EDELSTEIN, Sergio
IPC分类号： G01R31/26
CPC分类号： G01R31/2831 , G01R31/2856 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： Test pads, methods, and systems for measuring properties of a wafer are provided. One test pad formed on a wafer includes a test structure configured such that one or more electrical properties of the test structure can be measured. The test pad also includes a conductive layer formed between the test structure and the wafer. The conductive layer prevents structures located under the test structure between the conductive layer and the wafer from affecting the one or more electrical properties of the test structure during measurement. One method for assessing plasma damage of a wafer includes measuring one or more electrical properties of a test structure formed on the wafer and determining an index characterizing the plasma damage of the test structure using the one or more electrical properties. In addition, systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.
摘要翻译：提供了用于测量晶片性能的测试垫，方法和系统。形成在晶片上的一个测试焊盘包括测试结构，其被配置为使得可以测量测试结构的一个或多个电特性。测试垫还包括在测试结构和晶片之间形成的导电层。导电层防止在测量期间位于导电层和晶片之间的测试结构下方的结构影响测试结构的一个或多个电性能。用于评估晶片的等离子体损伤的一种方法包括测量形成在晶片上的测试结构的一个或多个电特性，并使用一个或多个电性质确定表征测试结构的等离子体损伤的指标。此外，提供了用于控制晶片上的电荷沉积以测量晶片的一个或多个电性能的系统和方法。一个系统包括配置成将电荷沉积在晶片上的电晕源和配置成测量电晕源内的一个或多个条件的传感器。该系统还包括配置为基于一个或多个条件来改变电晕源的一个或多个参数的控制子系统。另一种系统包括电晕源，其被配置为在电荷沉积期间将电荷沉积在晶片上以及布置在电晕源的放电室内的气体混合物。气体混合物改变沉积在晶片上的电荷的一个或多个参数。

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