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    • 4. 发明申请
    • PROCESS FOR REMOVAL OF METALS AND ALLOYS FROM A SUBSTRATE
    • 从基板上去除金属和合金的工艺
    • WO2006130439A1
    • 2006-12-07
    • PCT/US2006/020331
    • 2006-05-25
    • FSI INTERNATIONAL, INC.HANESTAD, Ronald, J.OLSON, Erik, D.FUSSY, Michael
    • HANESTAD, Ronald, J.OLSON, Erik, D.FUSSY, Michael
    • C23F1/30C23F1/10H01L21/3213
    • H01L21/32134C23F1/10C23F1/30
    • A metal that can be dissolved in aqua regia or a metal alloy containing a metal that can be dissolved in aqua regia can be effectively removed from a substrate, and particularly a silicon wafer substrate by a method of application of a composition having a HC1(concentrated)/hydrogen peroxide(concentrated) volume ratio of about 1:1 to about 4:1 that is substantially free of added water. In another embodiment, a metal that can be dissolved in aqua regia or a metal alloy containing a metal that can be dissolved in aqua regia is removed from a substrate by a composition comprising HC1(concentrated)/hydrogen peroxide(concentrated)/water in a volume ratio of from about 2:0.5:4 to about 4:2:4. The composition, heated to a temperature of about 60° C. to about 100°C, is applied to a substrate having the metal or metal alloy thereon, which is preferably heated to a temperature of from about 50°C to about 100°C. The metal or metal alloy preferably is platinum metal or a metal alloy comprising platinum metal, and the substrate is a silicon wafer substrate.
    • 可以通过使用具有HC1(浓缩的)的组合物的方法从基材,特别是硅晶片基材中有效地除去能够溶解在王水中的金属或含有可溶于王水中的金属的金属合金 )/过氧化氢(浓缩)体积比为约1:1至约4:1,基本上不含加水。 在另一个实施方案中,可以通过包含HC1(浓缩)/过氧化氢(浓缩)/水的组合物从基底中除去可溶于王水中的金属或含有可溶于王水中的金属的金属合金 体积比为约2:0.5:4至约4:2:4。 将加热到约60℃至约100℃的温度的组合物施加到其上具有金属或金属合金的基材上,其优选加热至约50℃至约100℃ 。 金属或金属合金优选为铂金属或包含铂金属的金属合金,基板为硅晶片基板。