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1. 发明申请

WO1998010121A1 METHOD FOR ANISOTROPIC ETCHING OF STRUCTURES IN CONDUCTING MATERIALS 审中-公开
标题翻译：导电材料结构异相蚀刻的方法
公开(公告)号：WO1998010121A1
公开(公告)日：1998-03-12
申请号：PCT/SE1997001480
申请日：1997-09-05
申请人： OBDUCAT AKTIEBOLAG , OLSSON, Lennart , HEIDARI, Babak
发明人： OBDUCAT AKTIEBOLAG
IPC分类号： C23F01/00
CPC分类号： C23F1/02 , C25F3/02 , H05K3/07
摘要： In a method for anisotropic etching of a structure in an electrically conductive substance to be etched, use is made of an etchant which in concentrated solution is usable for isotropic etching of structures in the substance to be etched. The substance to be etched is contacted with the etchant in a solution which is so diluted that the etchant is unusable for isotropic etching. The etchant is subjected, adjacent to the substance to be etched, to an electric field of such a strength that anisotropic etching of the substance to be etched is accomplished. Moreover, an etching fluid is described, comprising an etchant in dilute solution, in which the etchant is present in a concentration of 200 mM at most, and use of such an etching fluid for making structures which are 50 mu m or less is also described.
摘要翻译：在要蚀刻的导电物质中的结构的各向异性蚀刻的方法中，使用蚀刻剂，其在浓缩溶液中可用于待蚀刻物质中的各向同性蚀刻结构。要蚀刻的物质在溶液中与蚀刻剂接触，溶液如此稀释，使蚀刻剂不能用于各向同性蚀刻。将蚀刻剂与待蚀刻的物质相邻地进行到这样的强度，即要实现蚀刻物质的各向异性腐蚀。此外，描述了一种蚀刻流体，其包括在稀溶液中的蚀刻剂，其中蚀刻剂最多以200mM的浓度存在，并且还描述了使用这种蚀刻流体制造50μm或更小的结构。

2. 发明申请

WO2003005124A1 A STAMP HAVING AN ANTISTICKING LAYER AND A METHOD OF FORMING OF REPAIRING SUCH A STAMP 审中-公开
标题翻译：具有防伪层的印章和修复这种印章的形成方法
公开(公告)号：WO2003005124A1
公开(公告)日：2003-01-16
申请号：PCT/SE2002/001334
申请日：2002-07-04
申请人： OBDUCAT AKTIEBOLAG , HEIDARI, Babak , LING, Torbjörn
发明人： HEIDARI, Babak , LING, Torbjörn
IPC分类号： G03F7/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0017
摘要： A stamp for use in transferring a pattern in nano-scale has a monomolecular antisticking layer. The anti-sticking layer comprises molecular chains, which are covalently bound to the surface of the stamp and which each comprise at least one fluorine-containing group. Each molecular chain contains a group Q, which comprises a bond which is weaker than the other bonds in the molecular chain as well as the covalent bond that binds the molecular chain to the surface of the stamp. Splitting of said bond in the group Q creates a group Q1, which is attached to the part of the molecular chain being left on the surface of the stamp and which is capable of reacting with a fluorine-containing compound to restore the antisticking layer. In a method of manufacturing a stamp for use in transferring a pattern in nanoscale, the stamp is provided with the above-mentioned molecular chain. In a method of repairing a damaged antisticking layer of the above-mentioned stamp, the stamp is treated with a repairing reagent, which has a coupling end, which is capable of reacting with the group Q1, and a fluorine-containing group located at the other end of the repairing reagent.
摘要翻译：用于转印纳米级图案的印花具有单分子抗粘层。防粘层包括分子链，其共价结合到印模的表面，并且每个包含至少一个含氟基团。每个分子链包含基团Q，其包含弱于分子链中的其它键的键以及将分子链结合到印模表面的共价键。分组Q中的所述键形成组Q1，其连接到分子链的部分留在印模的表面上，并且能够与含氟化合物反应以还原防粘层。在制造用于以纳米级转印图案的印模的方法中，印模具有上述分子链。在修复上述印模的损伤抗粘层的方法中，用能够与基团Q1反应的具有偶合端的修复试剂和位于所述印模的含氟基团的修饰试剂进行处理修复试剂的另一端。

3. 发明申请

WO2003024172A3 A METHOD OF ETCHING COPPER ON CARDS 审中-公开
公开(公告)号：WO2003024172A3
公开(公告)日：2003-03-20
申请号：PCT/SE2002/001602
申请日：2002-09-09
申请人： OBDUCAT AKTIEBOLAG , FRENNESSON, Göran , BIERINGS, Gust , BJARNASON, Bjarni , SJÖBERG, Jenny
发明人： FRENNESSON, Göran , BIERINGS, Gust , BJARNASON, Bjarni , SJÖBERG, Jenny
IPC分类号： H05K3/07
摘要： Etching of copper on a card is achieved by applying an electrical voltage between a cathode (102) and the card (42), the card (42) thereby forming an anode. The cathode (102) and the card (42) are immersed in an electrolyte comprising a first component, which may be reduced from a first state in the form of an ion having a metal atom with a first positive oxidation number to a second state in the form of an ion having said metal atom with a second positive oxidation number, which is less than said first positive oxidation number. A first redox potential in the electrolyte for reduction from the first to the second state is larger than a second redox potential in the electrolyte for reduction of divalent copper ions to metallic copper. During the etching metallic copper on the card is oxidised and transferred into positively charged copper ions while the first component is reduced from its first state to its second state. The quality of the etched structures on the card is improved since no metallic copper is precipitated on the cathode.

4. 发明申请

WO2003024172A2 A METHOD OF ETCHING COPPER ON CARDS 审中-公开
标题翻译：一种在卡片上蚀刻铜的方法
公开(公告)号：WO2003024172A2
公开(公告)日：2003-03-20
申请号：PCT/SE2002/001602
申请日：2002-09-09
申请人： OBDUCAT AKTIEBOLAG , FRENNESSON, Göran , BIERINGS, Gust , BJARNASON, Bjarni , SJÖBERG, Jenny
发明人： FRENNESSON, Göran , BIERINGS, Gust , BJARNASON, Bjarni , SJÖBERG, Jenny
IPC分类号： H05K3/07
CPC分类号： H05K3/07 , C25F3/02 , C25F7/00
摘要： Etching of copper on a card is achieved by applying an electrical voltage between a cathode (102) and the card (42), the card (42) thereby forming an anode. The cathode (102) and the card (42) are immersed in an electrolyte comprising a first component, which may be reduced from a first state in the form of an ion having a metal atom with a first positive oxidation number to a second state in the form of an ion having said metal atom with a second positive oxidation number, which is less than said first positive oxidation number. A first redox potential in the electrolyte for reduction from the first to the second state is larger than a second redox potential in the electrolyte for reduction of divalent copper ions to metallic copper. During the etching metallic copper on the card is oxidised and transferred into positively charged copper ions while the first component is reduced from its first state to its second state. The quality of the etched structures on the card is improved since no metallic copper is precipitated on the cathode.
摘要翻译：通过在阴极（102）和卡（42），卡（42）之间施加电压从而形成阳极来实现在卡上蚀刻铜。将阴极（102）和卡（42）浸入包含第一组分的电解质中，该第一组分可以从具有第一正氧化数的金属原子的离子形式的第一状态降低到具有所述金属原子的具有小于所述第一正氧化数的第二正氧化数的离子形式。用于从第一状态降低到第二状态的电解质中的第一氧化还原电位大于电解液中用于将二价铜离子还原成金属铜的第二氧化还原电位。在蚀刻期间，卡上的金属铜被氧化并转移成带正电荷的铜离子，而第一组分从第一状态减少到第二状态。由于没有金属铜沉积在阴极上，卡上蚀刻结构的质量得到了改善。

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