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    • 3. 发明申请
    • METHODS OF FABRICATING MAGNETORESISTIVE MEMORY DEVICES
    • 制造磁记忆体装置的方法
    • WO2003098632A2
    • 2003-11-27
    • PCT/US2003/014871
    • 2003-05-12
    • NOVA RESEARCH, INC.
    • HUGGINS, Harold, A.
    • G11C
    • G11C11/155
    • In accordance with one or more embodiments of the present invention, a technique fabricating a magnetoresistive memory device, where the magnetoresistive memory device has a magnetic memory element and a plurality of conductors for at least one of reading and writing the magnetic memory element. The plurality of conductors include a first conductor at least partially located at a first side of the magnetic memory element for reading the magnetic memory element, a second conductor at least partially located at a second side of the magnetic memory element for reading the magnetic memory element, a third conductor at least partially located at the second side of the magnetic memory element for writing the magnetic memory element, and a fourth conductor at least partially located at the first side of the magnetic memory element for writing the magnetic memory element. The first conductor is formed before the fourth conductor.
    • 根据本发明的一个或多个实施例,一种制造磁阻存储器件的技术,其中磁阻存储器件具有磁存储元件和用于读取和写入磁存储元件中的至少一个的多个导体。 多个导体包括至少部分地位于用于读取磁存储元件的磁存储元件的第一侧的第一导体,至少部分地位于磁存储元件的第二侧的第二导体,用于读取磁存储元件 至少部分地位于用于写入磁存储元件的磁存储元件的第二侧的第三导体,以及至少部分地位于用于写入磁存储元件的磁存储元件的第一侧的第四导体。 第一导体形成在第四导体之前。