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    • 1. 发明申请
    • ION GUN
    • 离子枪
    • WO1998018150A1
    • 1998-04-30
    • PCT/GB1997002923
    • 1997-10-23
    • NORDIKO LIMITEDPROUDFOOT, Gary
    • NORDIKO LIMITED
    • H01J27/02
    • H01J27/024H01J27/18H01J37/08
    • The present invention relates to a low energy ion gun (3; 103) for use in ion beam processing comprising: a plasma chamber (5) comprising an open ended, conductive, non-magnetic body, a first end of which is closed by a flat or minimally dished dielectric member and with electrodes (6) at a second end thereof opposite the first end; primary magnet means (16) arranged around the body for trapping electrons adjacent the wall of the plasma chamber in use of the ion gun and an r.f. induction device including a substantially flat coil (12) which lies adjacent to the dielectric member for inductively generating a plasma in the plasma chamber, characterised in that the electrodes include a first multi-aperture grid (29; 127) arranged for connection to a first positive potential source and positioned to contact the plasma in the plasma chamber; a second multi-aperture grid (29a; 128) arranged for connection to a second potential source of lower potential than the first source so as to produce a first acceleration field for accelerating ions towards and through the second grid; and a third multi-aperture grid (30; 129) arranged for connection to a third potential source of lower potential than the second potential source so as to produce a second acceleration field for accelerating ions towards and through the third grid, the apertures of the first, second and third grids being aligned so that particles emerging from an aperture of the first grid are accelerated through a corresponding aperture of the second grid and then through a corresponding aperture of the third grid in the form of a beamlet, a plurality of beamlets from the third grid forming a beam downstream of the third grid.
    • 本发明涉及用于离子束处理的低能离子枪(3; 103),其包括:等离子体室(5),其包括开放式导电的非磁性体,其第一端由 平坦或微小的电介质构件,并且在与第一端相对的第二端处具有电极(6); 初级磁体装置(16)布置在身体周围,用于在使用离子枪和r.f.中捕获邻近等离子体室的壁的电子。 感应装置包括位于电介质构件附近的用于在等离子体室中感应地产生等离子体的基本平坦的线圈(12),其特征在于,所述电极包括第一多孔格栅(29; 127),其布置成连接到第一 正电位源并定位成与等离子体室中的等离子体接触; 第二多孔格栅(29a; 128)布置成连接到比第一源低的电位的第二电位源,以便产生用于加速离子朝向和穿过第二栅格的第一加速场; 以及第三多孔格栅(30; 129),布置成连接到比所述第二电位源低的电位的第三电位源,以产生用于加速离子朝向和穿过所述第三栅极的第二加速场, 第一,第二和第三格栅被对准,使得从第一格栅的孔径出射的粒子被加速穿过第二格栅的对应的孔,然后通过子束形式的第三格栅的相应孔径,多个子束 从第三格栅形成在第三格栅下游的光束。
    • 2. 发明申请
    • MAGNET ARRAY
    • 磁网阵列
    • WO1997042649A1
    • 1997-11-13
    • PCT/GB1997001233
    • 1997-05-07
    • NORDIKO LIMITEDDIVER, Joan, Mary +lfDAVIS, Mervyn, HowardPEARSON, David, Ian, CharlesREEVES, Simon, Richard
    • NORDIKO LIMITEDDIVER, Joan, Mary +lfDIVER, Barry +di
    • H01J37/34
    • H01J37/3429H01F7/20H01J37/3402H01J37/3426
    • An electro-magnet array is described for use in a sputtering apparatus. The array comprises a magnetisable core member (2; 102) extending substantially horizontally and having magnetisable outward projections (4 to 7; 104 to 107) arranged as at least two pairs of symmetrically opposed projections projecting outwardly from the core member (2; 102). A pole member (13 to 16; 113 to 116) is associated with each projection (4 to 7; 104 to 107) and vertically displaced with respect thereto. A magnetisable coupling means (12; 112) is arranged to couple each pole piece (13 to 16; 113 to 116) magnetically to its respective projection (4 to 7; 104 to 107). A magnetising coil (8 to 11; 108 to 111) around each projection (4 to 7; 104 to 107) is arranged for producing a magnetic field aligned substantially with a horizontal axis of symmetry of its respective projection (4 to 7; 104 to 107) in dependence upon the direction of flow of electric current through the magnetising coil (8 to 11; 108 to 111). The magnetising coils (8 to 11; 108 to 111) are arranged so that, upon energisation, the magnetic field of one coil of a pair of projections (4 to 7; 104 to 107) can produce a south pole at an inward side of its respective pole piece (13 to 16; 113 to 116) while the magnetic field of the coil (8 to 11; 108 to 111) of the other projection (4 to 7; 104 to 107) of the pair produces a north pole at an inward side of its respective pole piece (13 to 16; 113 to 116). At any moment, at least two inwardly facing south poles are produced on the pole pieces (13 to 16; 113 to 116) on one side of a vertical plane of symmetry through the array (1; 101) and an equal number of inwardly facing north poles are produced on the pole pieces (13 to 16; 113 to 116) on the other side of the vertical plane of symmetry.
    • 描述了用于溅射装置的电磁体阵列。 阵列包括基本上水平延伸并且具有可磁化的向外突出部(4至7; 104至107)的可磁化芯部构件(2; 102),其布置为从芯构件(2; 102)向外突出的至少两对对称相对的突出部, 。 极构件(13至16; 113至116)与每个突起(4至7; 104至107)相关联,并相对于其垂直移位。 磁性耦合装置(12; 112)被布置成将每个极片(13至16; 113至116)磁性耦合到其相应的突起(4至7; 104至107)。 围绕每个突起(4至7; 104至107)的磁化线圈(8至11; 108至111)布置成用于产生基本上与其各自的突出部(4至7; 104至 107)依赖于通过磁化线圈(8至11; 108至111)的电流的流动方向。 磁化线圈(8至11; 108至111)布置成使得在通电时,一对突起(4至7; 104至107)中的一个线圈的磁场可以在内部的一侧产生南极 其相应的极片(13至16; 113至116),而该对的另一突起(4至7; 104至107)的线圈(8至11; 108至111)的磁场产生北极 其各自的极靴(13至16; 113至116)的内侧。 在任何时刻,在通过阵列(1; 101)的垂直对称平面的一侧上的极片(13至16; 113至116)上产生至少两个向内的南极,并且相等数量的向内 在垂直对称平面的另一侧的极片(13至16; 113至116)上产生北极。
    • 3. 发明申请
    • ION GUN
    • 离子枪
    • WO1990010945A1
    • 1990-09-20
    • PCT/GB1990000340
    • 1990-03-06
    • NORDIKO LIMITEDUNITED KINGDOM ATOMIC ENERGY AUTHORITYDAVIS, Mervyn, HowardPROUDFOOT, GaryBAYLISS, Keith, Howard
    • NORDIKO LIMITEDUNITED KINGDOM ATOMIC ENERGY AUTHORITY
    • H01J27/16
    • H01J27/16H01J37/08
    • An ion gun (3) is described for use in ion beam processing comprising: a) a plasma chamber (5) comprising: wall means defining an evacuable chamber having a first end and a second end; and a dielectric member (10) which extends across the first end of the evacuable chamber; b) gas inlet means (11) for admission to the chamber of a plasma forming gas; c) r.f. emitter (12) means associated with the dielectric member (10) for inductively generating a plasma in the gas in the plasma chamber in use of the ion gun; and d) a control grid structure (6) for extracting ions from plasma in the plasma chamber including a first grid (29) arranged for connection to a positive voltage source and a second grid (30) arranged for connection to a negative voltage source so as to produce an acceleration field for accelerating ions towards and through the second grid of the control grid structure. An ion beam processing apparatus (1) incorporating such an ion gun (3) is also described, as well as an ion beam neutraliser (7).
    • 描述了用于离子束处理的离子枪(3),其包括:a)等离子体室(5),包括:壁装置,其限定具有第一端和第二端的可抽空室; 以及延伸穿过可抽空腔的第一端的电介质构件(10); b)用于进入等离子体形成气体的室的气体入口装置(11) c)r.f. 发射器(12)与电介质构件(10)相关联,用于在使用离子枪时在等离子体室中的气体中感应地产生等离子体; 以及d)用于从所述等离子体室中的等离子体中提取离子的控制栅格结构(6),包括布置成连接到正电压源的第一栅极(29)和布置成连接到负电压源的第二栅格(30) 以产生用于加速离子朝向并通过控制栅格结构的第二格栅的加速场。 还描述了结合有这样的离子枪(3)的离子束处理装置(1)以及离子束中和器(7)。
    • 4. 发明申请
    • APPARATUS
    • 仪器
    • WO2003042423A1
    • 2003-05-22
    • PCT/GB2002/005139
    • 2002-11-13
    • NORDIKO LIMITEDDAVIS, Mervyn, Howard
    • DAVIS, Mervyn, Howard
    • C23C14/34
    • H01J37/3473C23C14/3464C23C14/352C23C14/568
    • A vacuum sputterring apparatus capable of depositing a plurality of thin film layers on a substrate, the apparatus comprising: a vacuum chamber (1) having gas inlet means and gas evacuation means; a substrate support table (2) arranged to be rotatable about at least one axis perpendicular to the plane of the table; means for rotating the substrate support table about said at least one axis; a plurality of sputtering targets (5) spaced around the walls of the chamber, each sputtering target having electrode means associated therewith; and means for altering the position of the substrate support table relative to each one of the plurality of sputtering targets (4) such that in use a substrate placed on the substrate support table may have a film deposited thereon of atoms sputtered from at least one of the said plurality of targets and subsequently, following alteration of the position of the substrate support table, have at least one further film deposited thereon by exposure to atoms form at least one other of said plurality of targets. A method of depositing multi-layer materials on a substrate and a method of controlling stoichiometry of deposited alloys are also provided.
    • 一种能够在基板上沉积多个薄膜层的真空溅射装置,该装置包括:具有气体入口装置和排气装置的真空室; 基板支撑台(2),布置成可绕垂直于工作台平面的至少一个轴线旋转; 用于使所述基板支撑台围绕所述至少一个轴线旋转的装置; 多个溅射靶(5)围绕室的壁间隔开,每个溅射靶具有与其相关联的电极装置; 以及用于相对于所述多个溅射靶(4)中的每一个改变所述衬底支撑台的位置的装置,使得在使用中,放置在所述衬底支撑台上的衬底可以具有沉积在其上的至少一个溅射靶 所述多个靶并且随后在衬底支撑台的位置改变之后,通过暴露于原子形成至少一个另外的膜,所述至少一个另外的膜形成所述多个靶中的至少另一个靶。 还提供了在衬底上沉积多层材料的方法和控制沉积合金的化学计量的方法。