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1. 发明申请

WO2009023152A1 LUBRICANT HAVING NANOPARTICLES AND MICROPARTICLES TO ENHANCE FUEL EFFICIENCY, AND A LASER SYNTHESIS METHOD TO CREATE DISPERSED NANOPARTICLES 审中-公开
标题翻译：具有提高燃料效率的纳米颗粒和微生物的润滑剂以及产生分散纳米颗粒的激光合成方法
公开(公告)号：WO2009023152A1
公开(公告)日：2009-02-19
申请号：PCT/US2008/009568
申请日：2008-08-08
申请人： NARAYAN, Jagdish
发明人： NARAYAN, Jagdish
IPC分类号： C10M171/06 , C10M125/00
CPC分类号： C10M141/00 , C10M2201/041 , C10M2201/05 , C10M2201/061 , C10N2220/082 , C10N2230/06 , C10N2230/54 , C10N2240/10 , Y10S977/773 , C10M2201/06 , C10N2210/03 , C10M2201/105
摘要： A combination nano and microparticle treatment for engines enhances fuel efficiency and life duration and reduces exhaust emissions. The nanoparticles are chosen from a class of hard materials, preferably alumina, silica, ceria, titania, diamond, cubic boron nitride, and molybdenum oxide. The microparticles are chosen from a class of materials of layered structures, preferably graphite, hexagonal boron nitride, magnesium silicates (talc) and molybdenum disulphide. The nano-micro combination can be chosen from the same materials. This group of materials includes zinc oxide, copper oxide, molybdenum oxide, graphite, talc, and hexagonal boron nitride. The ratio of nano to micro in the proposed combination varies with the engine characteristics and driving conditions. A laser synthesis method can be used to disperse nanoparticles in engine oil or other compatible medium. The nano and microparticle combination when used in engine oil can effect surface morphology changes such as smoothening and polishing of engine wear surfaces, improvement in coefficient of friction, and fuel efficiency enhancement up to 35% in a variety of vehicles (cars and trucks) under actual road conditions, and reduction in exhaust emissions up to 90%.
摘要翻译：用于发动机的纳米和微粒组合治疗可以提高燃油效率和使用寿命，并减少废气排放。纳米颗粒选自一类硬质材料，优选氧化铝，二氧化硅，二氧化铈，二氧化钛，金刚石，立方氮化硼和氧化钼。微粒选自分层结构的材料，优选石墨，六方氮化硼，硅酸镁（滑石）和二硫化钼。纳米微组合可以从相同的材料中选择。该组材料包括氧化锌，氧化铜，氧化钼，石墨，滑石和六方氮化硼。所提出的组合中的纳米与微米的比值随发动机特性和驾驶条件而变化。可以使用激光合成方法将纳米颗粒分散在发动机机油或其他兼容介质中。在发动机油中使用的纳米和微粒组合可以影响表面形态变化，如发动机磨损表面的平滑和抛光，摩擦系数的提高和燃油效率的提高，在各种车辆（汽车和卡车）下可达35％实际路况，废气排放量减少达90％。

2. 发明申请

WO03107442A2 ELECTRODE FOR P-TYPE GALLIUM NITRIDE-BASED SEMICONDUCTORS 审中-公开
标题翻译：用于P型氮化镓的半导体的电极
公开(公告)号：WO03107442A2
公开(公告)日：2003-12-24
申请号：PCT/US0319034
申请日：2003-06-17
申请人： KOPIN CORP , OH TCHANG-HUN , CHOI HONG K , TSAUR BOR-YEU , FAN JOHN C C , LIAO SHIRONG , NARAYAN JAGDISH
发明人： OH TCHANG-HUN , CHOI HONG K , TSAUR BOR-YEU , FAN JOHN C C , LIAO SHIRONG , NARAYAN JAGDISH
IPC分类号： H01L21/285 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/42 , H01L33/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L33/32 , H01L33/38 , H01L2933/0016 , Y10S257/918
摘要： An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.
摘要翻译：公开了一种用于p型氮化镓基半导体材料的改进的电极，其包括氧化金属层和金属材料的第一和第二层。电极通过在p型半导体层上沉积三个或更多个金属层而形成，使得至少一个金属层与p型半导体层接触。然后至少两个金属层在氧的存在下进行退火处理以氧化至少一个金属层以形成金属氧化物。电极为p型氮化镓基半导体材料提供良好的欧姆接触，从而降低氮化镓基半导体器件的工作电压。

3. 发明申请

WO2003073522A3 EFFICIENT LIGHT EMITTING DIODES AND LASER DIODES 审中-公开
公开(公告)号：WO2003073522A3
公开(公告)日：2003-09-04
申请号：PCT/US2003/005566
申请日：2003-02-24
申请人： KOPIN CORPORATION , NARAYAN, Jagdish , YE, Jinlin , HON, Schang-Jing , FOX, Ken , CHEN, Jyh, Chia , CHOI, Hong, K. , FAN, John, C., C.
发明人： NARAYAN, Jagdish , YE, Jinlin , HON, Schang-Jing , FOX, Ken , CHEN, Jyh, Chia , CHOI, Hong, K. , FAN, John, C., C.
IPC分类号： H01L33/00
摘要： An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

4. 发明申请

WO1989004550A2 ZONE-MELTING RECRYSTALLIZATION PROCESS 审中-公开
标题翻译：区域冶炼再结晶工艺
公开(公告)号：WO1989004550A2
公开(公告)日：1989-05-18
申请号：PCT/US1988004028
申请日：1988-11-10
申请人： KOPIN CORPORATION , FAN, John, C., C. , ZAVRACKY, Paul, M. , NARAYAN, Jagdish , ALLEN, Lisa, P. , VU, Duy-Phach
发明人： KOPIN CORPORATION
IPC分类号： H01L21/20
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/2022
摘要： An improved method of zone-melting and recrystallizing of polysilicon film on an insulator over silicon is described.

5. 发明申请

WO2005095263A2 METHODS OF FORMING ALPHA AND BETA TANTALUM FILMS WITH CONTROLLED AND NEW MICROSTRUCTURES 审中-公开
标题翻译：用控制和新的微结构形成ALPHA和BETA TANTALUM膜的方法
公开(公告)号：WO2005095263A2
公开(公告)日：2005-10-13
申请号：PCT/US2005/009763
申请日：2005-03-24
申请人： H. C. STARCK INC. , NARAYAN, Jagdish , KUMAR, Prabhat , WU, Richard
发明人： NARAYAN, Jagdish , KUMAR, Prabhat , WU, Richard
IPC分类号： B81C1/00
CPC分类号： C23C16/06 , C23C14/16 , C23C14/548
摘要： Thin tantalum films having novel microstructures are provided. The films have microstructures such as nanocrystalline, single crystal and amorphous. These films provide excellent diffusion barrier properties and are useful in microelectronic devices. Methods of forming the films using pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) deposition methods are also provided, as are microelectronic devices incorporating these films.
摘要翻译：提供具有新颖微结构的薄钽薄膜。该膜具有微结构，如纳米晶体，单晶和无定形。这些膜提供优异的扩散阻挡性能并且在微电子器件中是有用的。还提供了使用脉冲激光沉积（PLD）和分子束外延（MBE）沉积方法形成膜的方法，以及包含这些膜的微电子器件也是如此。

6. 发明申请

WO2005015579A3 METHODS OF FORMING THREE-DIMENSIONAL NANODOT ARRAYS IN A MATRIX 审中-公开
标题翻译：在基质中形成三维纳米阵列的方法
公开(公告)号：WO2005015579A3
公开(公告)日：2005-08-11
申请号：PCT/US0340150
申请日：2003-11-26
申请人： UNIV NORTH CAROLINA STATE , NARAYAN JAGDISH , TIWARI ASHUTOSH
发明人： NARAYAN JAGDISH , TIWARI ASHUTOSH
IPC分类号： G11B5/855 , H01F1/00 , H01F41/20 , H01F41/30 , H01L29/12
CPC分类号： H01F41/20 , B82Y10/00 , B82Y25/00 , G11B5/855 , H01F1/0063 , H01F1/009 , H01L29/127
摘要： Nanostructures and methods of making nanostructures having self-assembled nanodot arrays wherein nanodots are self-assembled in a matrix material due to the free energies of the nanodot material and/or differences in the Gibb's free energy of the nanodot materials and matrix materials.
摘要翻译：由于纳米点材料的自由能和/或纳米点材料和基质材料的吉布斯自由能的差异，制备具有自组装纳米点阵列的纳米结构的纳米结构和方法，其中纳米点在基质材料中自组装。

7. 发明申请

WO2005043604A2 GROWTH AND INTEGRATION OF EPITAXIAL GALLIUM NITRIDE FILMS WITH SILICON-BASED DEVICES 审中-公开
标题翻译：外延硅酸铝膜与硅基器件的生长和整合
公开(公告)号：WO2005043604A2
公开(公告)日：2005-05-12
申请号：PCT/US2004/034752
申请日：2004-10-21
申请人： NORTH CAROLINA STATE UNIVERSITY , RAWDANOWICZ, Thomas, A. , NARAYAN, Jagdish
发明人： RAWDANOWICZ, Thomas, A. , NARAYAN, Jagdish
IPC分类号： H01L21/00
CPC分类号： C30B25/18 , C30B23/02 , C30B29/40 , H01L21/8258
摘要： Epitaxial gallium nitride is grown on a silicon substrate while reducing or suppressing the formation of a buffer layer. The gallium nitride may be grown directly on the silicon substrate, for example using domain epitaxy. Alternatively, less than one complete monolayer of silicon nitride may be formed between the silicon and the gallium nitride. Subsequent to formation of the gallium nitride, an interfacial layer of silicon nitride may be formed between the silicon and the gallium nitride.
摘要翻译：在减少或抑制缓冲层的形成的同时，在硅衬底上生长外延氮化镓。可以直接在硅衬底上生长氮化镓，例如使用畴外延。或者，可以在硅和氮化镓之间形成少于一个完整的氮化硅单层。在形成氮化镓之后，可以在硅和氮化镓之间形成氮化硅的界面层。

8. 发明申请

WO2005015579A2 METHODS OF FORMING THREE-DIMENSIONAL NANODOT ARRAYS IN A MATRIX 审中-公开
标题翻译：在矩阵中形成三维纳米阵列的方法
公开(公告)号：WO2005015579A2
公开(公告)日：2005-02-17
申请号：PCT/US2003/040150
申请日：2003-11-26
申请人： NORTH CAROLINA STATE UNIVERSITY , NARAYAN, Jagdish , TIWARI, Ashutosh
发明人： NARAYAN, Jagdish , TIWARI, Ashutosh
IPC分类号： H01F
CPC分类号： H01F41/20 , B82Y10/00 , B82Y25/00 , G11B5/855 , H01F1/0063 , H01F1/009 , H01L29/127
摘要： Nanostructures and methods of making nanostructures having self-assembled nanodot arrays wherein nanodots are self-assembled in a matrix material due to the free energies of the nanodot material and/or differences in the Gibb's free energy of the nanodot materials and matrix materials.
摘要翻译：纳米结构和制备具有自组装纳米点阵列的纳米结构的方法，其中纳米点由于纳米棒材料的自由能而自组装在基体材料中和/或纳米点材料和基质材料的吉布斯自由能的差异。

9. 发明申请

WO2003107442A3 ELECTRODE FOR P-TYPE GALLIUM NITRIDE-BASED SEMICONDUCTORS 审中-公开
公开(公告)号：WO2003107442A3
公开(公告)日：2003-12-24
申请号：PCT/US2003/019034
申请日：2003-06-17
申请人： KOPIN CORPORATION , OH, Tchang-Hun , CHOI, Hong, K. , TSAUR, Bor-Yeu , FAN, John, C., C. , LIAO, Shirong , NARAYAN, Jagdish
发明人： OH, Tchang-Hun , CHOI, Hong, K. , TSAUR, Bor-Yeu , FAN, John, C., C. , LIAO, Shirong , NARAYAN, Jagdish
IPC分类号： H01L33/00
摘要： An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.

10. 发明申请

WO2003073522A2 EFFICIENT LIGHT EMITTING DIODES AND LASERS 审中-公开
标题翻译：有效的发光二极管和激光
公开(公告)号：WO2003073522A2
公开(公告)日：2003-09-04
申请号：PCT/US2003/005566
申请日：2003-02-24
申请人： KOPIN CORPORATION , NARAYAN, Jagdish , YE, Jinlin , HON, Schang-Jing , FOX, Ken , CHEN, Jyh, Chia , CHOI, Hong, K. , FAN, John, C., C.
发明人： NARAYAN, Jagdish , YE, Jinlin , HON, Schang-Jing , FOX, Ken , CHEN, Jyh, Chia , CHOI, Hong, K. , FAN, John, C., C.
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/106 , H01S5/3425 , H01S5/34333
摘要： An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.
摘要翻译：一种光电器件，例如LED或激光器，其通过在由III族氮化物的量子阱层中的横向厚度变化形成的量子限制区域中的载流子（电子和空穴）的复合产生自发发射。

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