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1. 发明申请

WO2008036714A3 CONTROL SCHEME FOR A MEMORY DEVICE 审中-公开
标题翻译：存储设备的控制方案
公开(公告)号：WO2008036714A3
公开(公告)日：2008-05-29
申请号：PCT/US2007078852
申请日：2007-09-19
申请人： NANOCHIP INC , STARK ROBERT N , ADAMS DONALD EDWARD
发明人： STARK ROBERT N , ADAMS DONALD EDWARD
IPC分类号： G11B9/00
CPC分类号： G11B9/1436 , B82Y10/00
摘要： A system for storing information comprises a media die including a frame and a media platform movably coupled with the frame, a media associated with the media platform, one or more capacitive sensors including an electrode fixedly connected with the media platform, and a tip platform including a tip, the tip platform positioned relative to the media platform such that the tip is arrangeable in communicative proximity to the media. The system further comprises circuitry to provide motion signals to urge the media platform relative to the tip platform, the circuitry including a coarse tracking loop, wherein the coarse tracking loop includes a trajectory generator and a primary control loop to adjust a trajectory generated by the trajectory generator based on a measurement from the one or more capacitive sensors.
摘要翻译：一种用于存储信息的系统，包括：媒体管芯，包括框架和与框架可移动地耦合的媒体平台，与媒体平台相关联的媒体，包括与媒体平台固定连接的电极的一个或多个电容传感器，尖端，尖端平台相对于媒介平台定位，使得尖端可布置成与媒介通信邻近。该系统进一步包括提供运动信号以相对于末端平台推动媒体平台的电路，该电路包括粗略跟踪回路，其中粗略跟踪回路包括轨迹发生器和主要控制回路以调整由轨迹产生的轨迹发生器基于来自一个或多个电容传感器的测量。

2. 发明申请

WO2004036622A2 MOLECULAR MEMORY INTEGRATED CIRCUIT UTILIZING NON-VIBRATING CANTILEVERS 审中-公开
标题翻译：分子式记忆集成电路利用非振荡器
公开(公告)号：WO2004036622A2
公开(公告)日：2004-04-29
申请号：PCT/US2003/032559
申请日：2003-10-15
申请人： NANOCHIP, INC.
发明人： RUST, Thomas, F.
IPC分类号： H01L
CPC分类号： G11C23/00 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11C13/0014
摘要： Memory devices in accordance with the present invention can comprise a molecular memory integrated circuit including a set of actuators capable of moving one or more platforms. In one embodiment the platforms can include either a memory device or a Molecular Array Read/Write Engine (MARE) with a cantilever system having at least one cantilever tip. When a first platform with a memory device is brought within close proximity of a second platform with a MARE, the actuators can position the cantilever tip to a specific location on the memory device. The tip of the cantilever can perform a number of functions to the memory device, including reading the state of the memory device or changing the state of the memory device. This description is not intended to be a complete description of, or limit the scope of, the invention.
摘要翻译：根据本发明的存储器件可以包括分子存储器集成电路，其包括能够移动一个或多个平台的一组致动器。在一个实施例中，平台可以包括具有至少一个悬臂尖端的悬臂系统的存储器件或分子阵列读/写引擎（MARE）。当具有存储器件的第一平台被带到与MARE的第二平台紧邻时，致动器可以将悬臂尖端定位到存储器件上的特定位置。悬臂的尖端可以对存储器件执行许多功能，包括读取存储器件的状态或改变存储器件的状态。本说明书不是对本发明的完整描述或限制本发明的范围。

3. 发明申请

WO2008088999A2 METHOD AND SYSTEM FOR WRITING AND READING A CHARGE-TRAP MEDIA WITH A PROBE TIP 审中-公开
标题翻译：用探针头来书写和阅读收费陷印媒体的方法和系统
公开(公告)号：WO2008088999A2
公开(公告)日：2008-07-24
申请号：PCT/US2008/050618
申请日：2008-01-09
申请人： NANOCHIP, INC. , KIM, Byong Man
发明人： KIM, Byong Man
IPC分类号： G11B5/54
CPC分类号： G11B9/08 , G11B11/08
摘要： An embodiment of a system for storing information in accordance with the present invention comprises a media including a barrier layer, an isolation layer and a trapping layer disposed between the barrier layer and the isolation layer; and a tip adapted to inject a charge through the barrier layer and into the trapping layer.
摘要翻译：根据本发明的用于存储信息的系统的实施例包括：介质，包括阻挡层，隔离层和设置在阻挡层和隔离层之间的俘获层; 以及适用于将电荷注入穿过阻挡层并进入俘获层的尖端。

4. 发明申请

WO2007146503A3 MEMORY STAGE FOR A PROBE STORAGE DEVICE 审中-公开
标题翻译：探索存储设备的存储级别
公开(公告)号：WO2007146503A3
公开(公告)日：2008-04-03
申请号：PCT/US2007067800
申请日：2007-04-30
申请人： NANOCHIP INC , ASCANIO PETER DAVID , BELOV NICOLAI
发明人： ASCANIO PETER DAVID , BELOV NICOLAI
IPC分类号： G06F12/00
CPC分类号： G11B9/1454
摘要： An embodiment of a probe storage device in accordance with the present invention can include a media frame, a media stage including a media, a suspension arrangement moveably connecting the media stage with the media frame, the suspension arrangement including a suspension, and a tip stage having a tip extending therefrom, the tip stage being arranged so that the tip stage is accessible to the tip. The suspension can comprise a foot fixedly connected with the media frame, a knee, a first flexure connected between the foot and the knee so that the knee is moveable relative to the foot, and a second flexure connected between the media stage and the knee so that the media stage is moveable relative to the knee.
摘要翻译：根据本发明的探针存储装置的实施例可以包括介质框架，包括介质的介质台，可移动地将介质台与介质框架连接的悬挂装置，悬架装置包括悬架，以及尖端台具有从其延伸的尖端，尖端台被布置成使得尖端可接近尖端。悬架可以包括与媒体框架固定连接的脚，膝盖，连接在脚和膝盖之间的第一弯曲部，使得膝部相对于脚可移动，以及连接在媒体台和膝盖之间的第二挠曲媒体舞台可以相对于膝盖移动。

5. 发明申请

WO2004036553A3 ATOMIC PROBES AND MEDIA FOR HIGH DENSITY DATA STORAGE 审中-公开
标题翻译：原子探针和高密度数据存储介质
公开(公告)号：WO2004036553A3
公开(公告)日：2006-02-16
申请号：PCT/US0332792
申请日：2003-10-15
申请人： NANOCHIP INC
发明人： RUST THOMAS F
IPC分类号： G11B5/00 , G11B5/127 , G11B9/00 , G11C11/00
CPC分类号： G11B9/1409 , B82Y10/00 , G11B5/00 , G11B5/127 , G11B9/14 , G11B9/1472 , G11B11/20 , G11B2005/0002 , G11B2005/0005
摘要： A device in accordance with one embodiment of the present invention comprises a phase change media including portions having altered resistivity where data is written to the media. Data written to the media can be represented by multiple resistivity measurements or ranges of resistivity measurements, allowing digital data and/or analog data to be stored on the media in high densities. The device can further comprise an overcoat and/or an undercoat. The overcoat can reduce physical damage inflicted on the media from a device such as a cantilever tip in a molecular memory integrated circuit used to write to or read from the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims.
摘要翻译：根据本发明的一个实施例的装置包括相变介质，其包括具有改变的电阻率的部分，其中数据被写入介质。可以通过多个电阻率测量或电阻率测量范围表示写入介质的数据，从而允许数字数据和/或模拟数据以高密度存储在介质上。该装置还可以包括外涂层和/或底涂层。外涂层可以减少介质上从用于写入或从介质读取的分子存储器集成电路中的诸如悬臂尖之类的装置所造成的物理损坏。本发明的其它目的，方面和优点可以通过阅读附图，说明书和权利要求来获得。

6. 发明申请

WO2009011960A1 METHOD AND MEDIA FOR IMPROVING FERROELECTRIC DOMAIN STABILITY IN AN INFORMATION STORAGE DEVICE 审中-公开
标题翻译：用于改善信息存储设备中的电磁域稳定性的方法和媒体
公开(公告)号：WO2009011960A1
公开(公告)日：2009-01-22
申请号：PCT/US2008/062901
申请日：2008-05-07
申请人： NANOCHIP, INC. , RAO, Valluri, Ramana , WANG, Li-Peng , MA, Qing , KIM, Byong, Man
发明人： RAO, Valluri, Ramana , WANG, Li-Peng , MA, Qing , KIM, Byong, Man
IPC分类号： G11B9/02 , G11B9/00
CPC分类号： G11B9/02 , Y10S977/947
摘要： A media for an information storage device comprises a substrate of single-crystal silicon, a buffer layer of an epitaxial single crystal insulator formed over the substrate, a bottom electrode layer of an epitaxial single crystal conductor formed over the buffer layer, a ferroelectric layer of an epitaxial single crystal ferroelectric material formed over the bottom electrode layer, and an overlayer of an epitaxial single crystal material formed over the ferroelectric layer. Dipole charges generally having a first orientation exist at an interface between the bottom electrode layer and the ferroelectric layer includes, while dipole charges generally having a second orientation opposite the first orientation exist at an interface between the ferroelectric layer and the overlayer includes.
摘要翻译：用于信息存储装置的介质包括单晶硅衬底，形成在衬底上的外延单晶绝缘体的缓冲层，形成在缓冲层上的外延单晶导体的底电极层，形成在缓冲层上的铁电层形成在底部电极层上的外延单晶铁电材料，以及形成在铁电体层上的外延单晶材料的覆层。通常具有第一取向的偶极电荷存在于底电极层和铁电层之间的界面处，其中通常具有与第一取向相反的第二取向的偶极电荷存在于铁电层和覆层之间的界面处。

7. 发明申请

WO2008115910A1 SYSTEMS AND METHODS OF WRITING AND READING A FERRO-ELECTRIC MEDIA WITH A PROBE TIP 审中-公开
标题翻译：使用探头提示阅读和阅读电磁介质的系统和方法
公开(公告)号：WO2008115910A1
公开(公告)日：2008-09-25
申请号：PCT/US2008/057327
申请日：2008-03-18
申请人： NANOCHIP, INC. , ADAMS, Donald, E. , STARK, Robert, N.
发明人： ADAMS, Donald, E. , STARK, Robert, N.
IPC分类号： G11B9/00
CPC分类号： G11B9/02 , B82Y10/00 , G11B9/1436 , G11B11/08
摘要： A system for storing information comprises a media including a ferroelectric layer, a tip arrangeable in electrically communicative proximity to the media, and circuitry to detect a polarization signal having a radio frequency. The polarization signal corresponds to changes in polarization of domains of the ferroelectric layer at a relative velocity of movement between the tip and the media, wherein a domain of polarization of the ferroelectric layer is information.
摘要翻译：用于存储信息的系统包括：介质，包括铁电层，可布置成与电介质接近的介质;以及用于检测具有射频的偏振信号的电路。偏振信号对应于在尖端和介质之间的相对移动速度下的铁电层的畴极化的变化，其中铁电层的偏振域是信息。

8. 发明申请

WO2007146504A2 CANTILEVER WITH CONTROL OF VERTICAL AND LATERAL POSITION OF CONTACT PROBE TIP 审中-公开
标题翻译：控制垂直和垂直位置的接触探头提示
公开(公告)号：WO2007146504A2
公开(公告)日：2007-12-21
申请号：PCT/US2007067805
申请日：2007-04-30
申请人： NANOCHIP INC , BELOV NICOLAI , RAPP ZEBULAH NATHAN
发明人： BELOV NICOLAI , RAPP ZEBULAH NATHAN
IPC分类号： G11B7/00 , G11B9/00
CPC分类号： G11B9/1445 , G01Q80/00
摘要： An embodiment of a probe storage device in accordance with the present invention can include an electrostatic actuator for controlling the z-position of a cantilever having a contact probe tip extending therefrom. The electrostatic actuator can comprise two electrodes: the cantilever and a conductive portion in overlapping proximity to the cantilever. By controlling the z-position of the cantilever, the contact probe tip can be selectively engaged and disengaged from a surface of a memory media, thereby allowing the contact probe to selectively read from and/or write to the memory media.
摘要翻译：根据本发明的探针存储装置的实施例可以包括用于控制悬臂的z位置的静电致动器，其具有从其延伸的接触探针尖端。静电致动器可以包括两个电极：悬臂和与悬臂重叠的导电部分。通过控制悬臂的z位置，可以将接触探针尖端选择性地与存储介质的表面接合和分离，从而允许接触探针选择性地从存储介质读取和/或写入存储介质。

9. 发明申请

WO2007146503A2 MEMORY STAGE FOR A PROBE STORAGE DEVICE 审中-公开
标题翻译：探索存储设备的存储级别
公开(公告)号：WO2007146503A2
公开(公告)日：2007-12-21
申请号：PCT/US2007/067800
申请日：2007-04-30
申请人： NANOCHIP, INC. , ASCANIO, Peter David , BELOV, Nicolai
发明人： ASCANIO, Peter David , BELOV, Nicolai
IPC分类号： H01J40/14
CPC分类号： G11B9/1454
摘要： An embodiment of a probe storage device in accordance with the present invention can include a media frame, a media stage including a media, a suspension arrangement moveably connecting the media stage with the media frame, the suspension arrangement including a suspension, and a tip stage having a tip extending therefrom, the tip stage being arranged so that the media is accessible to the tip. The suspension can comprise a foot fixedly connected with the media frame, a knee, a first flexure connected between the foot and the knee so that the knee is moveable relative to the foot, and a second flexure connected between the media stage and the knee so that the media stage is moveable relative to the knee.
摘要翻译：根据本发明的探针存储装置的实施例可以包括介质框架，包括介质的介质台，可移动地将介质台与介质框架连接的悬挂装置，悬架装置包括悬架，以及尖端台具有从其延伸的尖端，所述尖端台被布置成使得所述介质能够接近所述尖端。悬架可以包括与媒体框架固定连接的脚，膝盖，连接在脚和膝盖之间的第一弯曲部，使得膝部相对于脚可移动，以及连接在媒体台和膝盖之间的第二挠曲媒体舞台可以相对于膝盖移动。

10. 发明申请

WO2007002370A2 MEDIA FOR WRITING HIGHLY RESOLVED DOMAINS 审中-公开
标题翻译：用于撰写高分辨率域名的媒体
公开(公告)号：WO2007002370A2
公开(公告)日：2007-01-04
申请号：PCT/US2006/024436
申请日：2006-06-23
申请人： NANOCHIP, INC. , ANOIKIN, Yevgeny, Vasilievich , ADAMS, Donald, Edward , FAN, Zhaohui
发明人： ANOIKIN, Yevgeny, Vasilievich , ADAMS, Donald, Edward , FAN, Zhaohui
IPC分类号： G11C11/00
CPC分类号： G11B9/04 , B82Y10/00 , G11B9/065 , G11B9/08 , G11B9/149 , G11B20/12 , G11C13/0004
摘要： Systems in accordance with the present invention can include a tip contactable with a media, the media including a phase change material in an embodiment (or polarity-dependent memory material or other memory material in other embodiments) disposed between a substrate and an overcoat. The overcoat is a co-deposited film having a conductive portion and a substantially non-conductive portion, the co-deposited film conducting current more efficiently through the overcoat than across the overcoat. The overcoat substantially directs the current so that a portion of the phase change material directly beneath the tip is heated to a sufficient temperature such that the structure of the material become disordered. The current is then removed from the phase change material, which is quickly cooled to form an domain having a resistivity larger than the crystalline bulk structure.
摘要翻译：根据本发明的系统可以包括可与介质接触的尖端，所述介质包括设置在基底和外涂层之间的实施方案（或其它实施方案中的极性相关的记忆材料或其它记忆材料）中的相变材料。外涂层是具有导电部分和基本上非导电部分的共沉积膜，共沉积膜通过外涂层比穿过外涂层更有效地传导电流。外涂层基本上引导电流，使得直接在尖端下方的相变材料的一部分被加热到足够的温度，使得材料的结构变得无序。然后将电流从相变材料中除去，其被快速冷却以形成具有大于结晶体结构的电阻率的畴。

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