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1. 发明申请

WO2003007348A2 APPARATUS AND METHOD FOR CONTROLLING GALVANIC CORROSION EFFECTS ON A SINGLE-WAFER CLEANING SYSTEM 审中-公开
标题翻译：在单晶清洗系统中控制电偶腐蚀效应的装置和方法
公开(公告)号：WO2003007348A2
公开(公告)日：2003-01-23
申请号：PCT/US2002/022106
申请日：2002-07-11
申请人： LAM RESEARCH CORPORATION , BOYD, John M. , RAVKIN, Mike , MIKHAYLICH, Katrina A.
发明人： BOYD, John M. , RAVKIN, Mike , MIKHAYLICH, Katrina A.
IPC分类号： H01L21/00
CPC分类号： H01L21/02057 , H01L21/02063 , H01L21/02074 , H01L21/67028 , H01L21/67034 , Y10S134/902
摘要： A method and apparatus for controlling galvanic corrosion effects on a single-wafer cleaning system are provided. In one embodiment, a method for minimizing galvanic corrosion effects in a single-wafer cleaning system is provided. The method initiates with applying a cleaning chemistry containing corrosion inhibitors to a surface of a wafer. Then, the surface of the wafer is exposed to the cleaning chemistry for a period of time. Next, a concentration gradient at an interface of the cleaning chemistry and the surface of the wafer is refreshed. Then, a rinsing agent and a drying agent are applied simultaneously to remove the cleaning chemistry , wherein the drying agent dries the surface of the wafer prior to a concentration of the corrosion inhibitors being diluted to a level insufficient to provide corrosion protection.
摘要翻译：提供了一种用于控制单晶片清洁系统上的电偶腐蚀效应的方法和设备。在一个实施例中，提供了一种用于使单晶片清洁系统中的电偶腐蚀效应最小化的方法。该方法始于将包含腐蚀抑制剂的清洁化学品施加到晶片的表面。然后，晶片的表面暴露于清洁化学物质一段时间。接下来，清洁化学品与晶片表面的界面处的浓度梯度被刷新。然后，同时施加漂洗剂和干燥剂以除去清洁化学品，其中干燥剂在将腐蚀抑制剂的浓度稀释到不足以提供防腐保护的浓度之前干燥晶片的表面。

2. 发明申请

WO03007348A3 APPARATUS AND METHOD FOR CONTROLLING GALVANIC CORROSION EFFECTS ON A SINGLE-WAFER CLEANING SYSTEM 审中-公开
标题翻译：用于控制单波浪清洁系统中的腐蚀性腐蚀效应的装置和方法
公开(公告)号：WO03007348A3
公开(公告)日：2003-08-21
申请号：PCT/US0222106
申请日：2002-07-11
申请人： LAM RES CORP , BOYD JOHN M , RAVKIN MIKE , MIKHAYLICH KATRINA A
发明人： BOYD JOHN M , RAVKIN MIKE , MIKHAYLICH KATRINA A
IPC分类号： H01L21/304 , H01L21/00 , H01L21/02 , H01L21/306 , H01L21/311 , H01L21/321
CPC分类号： H01L21/02057 , H01L21/02063 , H01L21/02074 , H01L21/67028 , H01L21/67034 , Y10S134/902
摘要： A method and apparatus for controlling galvanic corrosion effects on a single-wafer cleaning system are provided. In one embodiment, a method for minimizing galvanic corrosion effects in a single-wafer cleaning system is provided. The method initiates with applying a cleaning chemistry containing corrosion inhibitors to a surface of a wafer. Then, the surface of the wafer is exposed to the cleaning chemistry for a period of time. Next, a concentration gradient at an interface of the cleaning chemistry and the surface of the wafer is refreshed. Then, a rinsing agent and a drying agent are applied simultaneously to remove the cleaning chemistry , wherein the drying agent dries the surface of the wafer prior to a concentration of the corrosion inhibitors being diluted to a level insufficient to provide corrosion protection.
摘要翻译：提供了一种用于控制对单晶片清洁系统的电偶腐蚀影响的方法和装置。在一个实施例中，提供了一种用于最小化单晶片清洁系统中的电偶腐蚀效应的方法。该方法通过将包含腐蚀抑制剂的清洁化学品施加到晶片的表面来启动。然后，将晶片的表面暴露于清洁化学品一段时间。接下来，刷新清洁化学品和晶片表面的界面处的浓度梯度。然后，同时施加漂洗剂和干燥剂以除去清洁化学品，其中干燥剂在将腐蚀抑制剂的浓度稀释至不足以提供防腐蚀的水平之前将晶片的表面干燥。

3. 发明申请

WO2003002301A1 END POINT DETECTION SYSTEM FOR CHEMICAL MECHANICAL POLISHING APPLICATIONS 审中-公开
标题翻译：化学机械抛光应用的端点检测系统
公开(公告)号：WO2003002301A1
公开(公告)日：2003-01-09
申请号：PCT/US2001/020283
申请日：2001-06-26
申请人： LAM RESEARCH CORPORATION , MIKHAYLICH, Katrina, A. , RAVKIN, Mike , GOTKIS, Yehiel
发明人： MIKHAYLICH, Katrina, A. , RAVKIN, Mike , GOTKIS, Yehiel
IPC分类号： B24B37/04
CPC分类号： B24B37/015 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： Chemical mechanical polishing systems and methods are disclosed. The system includes a polishing pad (304) that is configured to move from a first point to a second point. A carrier (308) is also included and is configured to hold a substrate (301) to be polished over the polishing pad. The carrier is designed to apply the substrate to the polishing pad in a polish location that is between the first point and the second point. A first sensor (310a) is located at the first point and oriented so as to sense an IN temperature of the polishing pad, and a second sensor (310b) is located at the second point and oriented so as to sense an OUT temperature of the polishing pad. The sensing of the IN and OUT temperatures is configured to produce a temperature differential that allows monitoring the process state and the state of the water surface for purposes of switching the process steps while processing wafers by chemical mechanical planarization.
摘要翻译：公开了化学机械抛光系统和方法。该系统包括被配置为从第一点移动到第二点的抛光垫（304）。还包括载体（308），并且构造成保持待抛光的基底（301）在抛光垫上。载体被设计成将基底施加到抛光垫在位于第一点和第二点之间的抛光位置。第一传感器（310a）位于第一点并且被定向成感测抛光垫的IN温度，并且第二传感器（310b）位于第二点并被定向成感测出抛光垫 IN和OUT温度的检测被配置为产生温度差，允许监测过程状态和水面的状态，以便通过化学机械平面化处理晶片来切换工艺步骤。

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