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1. 发明申请

WO2022258245A1 APPARATUS COMPRISING A WEIGHING DEVICE 审中-公开
公开(公告)号：WO2022258245A1
公开(公告)日：2022-12-15
申请号：PCT/EP2022/059850
申请日：2022-04-13
申请人： METRYX LTD.
发明人： OWENS, Sam , ELLIOTT, Gregor Robert , RAMAKRISHNAN, Vivek , COELHO, Luis , SAXENA, Prashant
IPC分类号： G01G7/02 , H01L21/00
摘要： An apparatus comprising: a weighing device for generating measurement output indicative of the weight of an object loaded on the weighing device; and a disturbance element for temporarily disturbing the measurement output of the weighing device while the object is loaded on the weighing device.

2. 发明申请

WO2008110746A3 MEASURING APPARATUS 审中-公开
标题翻译：测量装置
公开(公告)号：WO2008110746A3
公开(公告)日：2008-10-30
申请号：PCT/GB2008000734
申请日：2008-03-04
申请人： METRYX LTD , WILBY ROBERT JOHN , KIERMASZ ADRIAN
发明人： WILBY ROBERT JOHN , KIERMASZ ADRIAN
IPC分类号： H01L21/00
CPC分类号： H01L21/67253
摘要： Measuring apparatus and method for monitoring fabrication of a semiconductor wafer by exciting and measuring vibrations of the wafer substrate. A measurable parameter of vibration (e.g. frequency) is indicative of mass of a vibrating region. Mass change caused by wafer treatment is reflected in changes in vibration measurements taken before and after that treatment. The apparatus includes a wafer support e.g. projecting ledge (19), a vibration exciting device e.g. contact probe (28) or pressure differential applicator, and a measurement device e.g. frequency sensor (62).
摘要翻译：通过激发和测量晶片衬底的振动来监测半导体晶片的制造的测量装置和方法。振动的可测量参数（例如频率）表示振动区域的质量。晶片处理引起的质量变化反映在该处理前后振动测量的变化。该装置包括晶片支架，例如突起凸缘（19），振动激励装置接触探针（28）或压差施加器，以及例如测量装置。频率传感器（62）。

3. 发明申请

WO0203449A3 APPARATUS AND METHOD FOR INVESTIGATING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于研究半导体晶片的装置和方法
公开(公告)号：WO0203449A3
公开(公告)日：2002-06-06
申请号：PCT/GB0102926
申请日：2001-06-29
申请人： METRYX LTD , WILBY ROBERT JOHN
发明人： WILBY ROBERT JOHN
IPC分类号： G01G9/00 , G01R31/26 , H01L21/66 , G01G17/00
CPC分类号： G01G9/00 , G01R31/2648 , H01L22/12
摘要： In order to determine the dielectric constant of a layer deposited on a semiconducotr wafer (2), the density of the layer is obtained. To obtain that density, the wafer (2) without the layer is weighed in a weighing chamber (4) in which a weighing pan (7) supports the wafer on a weighing balance. The weight of the wafer is determined taking into account the buoyancy exerted by the air on the wafer (2). Then the layer is deposited on the wafer (2) and the weighing operation repeated. Alternatively a reference wafer may be used. If the material of the layer is known, the weight of the layer can be used to derive its density using a thickness measurement. Alternatively, if the density is known, the thickness can be obtained.
摘要翻译：为了确定沉积在半导体晶片（2）上的层的介电常数，获得该层的密度。为了获得该密度，在称量室（4）中称量没有该层的晶片（2），称量盘（7）在该称量室（7）上将晶片支撑在称重天平上。在考虑到晶片（2）上的空气所施加的浮力的情况下确定晶片的重量。然后将该层沉积在晶片（2）上并重复称量操作。或者可以使用参考晶片。如果该层的材料是已知的，则可以使用厚度测量来使用该层的重量来导出其密度。或者，如果密度已知，则可以获得厚度。

4. 发明申请

WO2023021007A1 DEVICE FOR CHANGING THE TEMPERATURE OF A WAFER 审中-公开
公开(公告)号：WO2023021007A1
公开(公告)日：2023-02-23
申请号：PCT/EP2022/072792
申请日：2022-08-15
申请人： METRYX LTD.
发明人： ELLIOTT, Gregor Robert , WILBY, Robert John , MOOSAVI, Abraham , OWENS, Sam
IPC分类号： H01L21/67 , H01L21/677
摘要： A device for changing the temperature of a wafer, the device comprising : a surface that is configured to support the wafer and to exchange heat with the wafer, and a space that is configured to receive at least a distal part of an end effector, which is used to support the wafer from beneath, when the end effector is used to lower the wafer onto the surface, wherein the space extends from or to a side of the device; and wherein the space is configured so that the at least a distal part of the end effector can be withdrawn from the space from the side of the device.

5. 发明申请

WO2009044113A3 SEMICONDUCTOR WAFER METROLOGY APPARATUS AND METHOD 审中-公开
公开(公告)号：WO2009044113A3
公开(公告)日：2009-06-04
申请号：PCT/GB2008003292
申请日：2008-09-29
申请人： METRYX LTD , WILBY ROBERT JOHN
发明人： WILBY ROBERT JOHN
IPC分类号： G01R31/26
CPC分类号： G01G21/28 , G01G9/00 , G01G21/22 , G01G23/01 , G01G23/16 , H01L21/67253 , H01L22/12
摘要： A semiconductor wafer metrology technique comprising performing atmospheric buoyancy compensated weighing of a wafer, in which the wafer is weighed in a substantially upright condition. A vertical or near vertical wafer orientation causes the surface area in the direction of a force (weight) sensor to be reduced compared with a horizontal wafer orientation. Hence, the electrostatic force components acting in the same direction as the wafer weight force component is reduced.
摘要翻译：一种半导体晶片测量技术，包括对晶片进行大气浮力补偿称重，其中晶片在基本竖直的状态下称重。垂直或接近垂直的晶片取向使得与水平晶片取向相比，力（重量）传感器的方向上的表面积减小。因此，作用在与晶片重力分量相同方向的静电力分量减小。

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