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1. 发明申请

WO2010065676A3 METHODS AND SYSTEMS FOR DETECTING DEFECTS ON A RETICLE 审中-公开
标题翻译：用于检测有缺陷的方法和系统
公开(公告)号：WO2010065676A3
公开(公告)日：2010-09-16
申请号：PCT/US2009066461
申请日：2009-12-02
申请人： KLA TENCOR CORP , PAK PATRICK TUNG-SING , CHIA WEE-TECK , CHIN AARON GEURDON , MALIK IRFAN , DUFFY BRIAN
发明人： PAK PATRICK TUNG-SING , CHIA WEE-TECK , CHIN AARON GEURDON , MALIK IRFAN , DUFFY BRIAN
IPC分类号： H01L21/66 , H01L21/027
CPC分类号： G01N21/956 , G01N2021/95676 , G06T7/001 , G06T2207/30148
摘要： Methods and systems for detecting defects on a reticle are provided. One method includes printing a single die reticle in first areas of a wafer using different values of a parameter of a lithography process and at least one second area using a nominal value of the parameter. The method also includes acquiring first images of the first areas and second image(s) of the at least one second area. In addition, the method includes separately comparing the first images acquired for different first areas to at least one of the second image(s). The method further includes detecting defects on the reticle based on first portions of the first images in which variations in the first images compared to the at least one second image are greater than second portions of the first images and the first portions that are common to two or more of the first images.
摘要翻译：提供了用于检测光罩上的缺陷的方法和系统。一种方法包括使用光刻工艺的参数的不同值和使用参数的标称值的至少一个第二区域在晶片的第一区域中印刷单个模具掩模版。该方法还包括获取至少一个第二区域的第一区域和第二图像的第一图像。此外，该方法包括将对于不同的第一区域获取的第一图像分别与第二图像中的至少一个进行比较。该方法还包括基于第一图像的第一部分来检测标线上的缺陷，其中与至少一个第二图像相比的第一图像的变化大于第一图像的第二部分和第二图像的两个共同的第一部分或更多的第一图像。

2. 发明申请

WO2010065676A2 METHODS AND SYSTEMS FOR DETECTING DEFECTS ON A RETICLE 审中-公开
标题翻译：用于检测论文缺陷的方法和系统
公开(公告)号：WO2010065676A2
公开(公告)日：2010-06-10
申请号：PCT/US2009/066461
申请日：2009-12-02
申请人： KLA-TENCOR CORPORATION , PAK, Patrick Tung-Sing , CHIA, Wee-Teck , CHIN, Aaron Geurdon , MALIK, Irfan , DUFFY, Brian
发明人： PAK, Patrick Tung-Sing , CHIA, Wee-Teck , CHIN, Aaron Geurdon , MALIK, Irfan , DUFFY, Brian
IPC分类号： H01L21/66 , H01L21/027
CPC分类号： G01N21/956 , G01N2021/95676 , G06T7/001 , G06T2207/30148
摘要： Methods and systems for detecting defects on a reticle are provided. One method includes printing a single die reticle in first areas of a wafer using different values of a parameter of a lithography process and at least one second area using a nominal value of the parameter. The method also includes acquiring first images of the first areas and second image(s) of the at least one second area. In addition, the method includes separately comparing the first images acquired for different first areas to at least one of the second image(s). The method further includes detecting defects on the reticle based on first portions of the first images in which variations in the first images compared to the at least one second image are greater than second portions of the first images and the first portions that are common to two or more of the first images.
摘要翻译：提供了用于检测掩模版上的缺陷的方法和系统。一种方法包括使用光刻工艺的参数的不同值和使用参数的标称值的至少一个第二区域在晶片的第一区域中印刷单个管芯标线片。该方法还包括获取至少一个第二区域的第一区域和第二图像的第一图像。另外，该方法包括将针对不同第一区域获取的第一图像分别与第二图像中的至少一个进行比较。该方法进一步包括基于第一图像的第一部分检测掩模版上的缺陷，其中第一图像与至少一个第二图像相比的变化大于第一图像的第二部分和第二部分共有的第一部分或更多的第一个图像。

3. 发明申请

WO2007143449A3 DETERMINING INFORMATION ABOUT DEFECTS OR BINNING DEFECTS DETECTED ON A WAFER AFTER AN IMMERSION LITHOGRAPHY PROCESS IS PERFORMED ON THE WAFER 审中-公开
公开(公告)号：WO2007143449A3
公开(公告)日：2007-12-13
申请号：PCT/US2007/069867
申请日：2007-05-29
申请人： KLA-TENCOR TECHNOLOGIES CORPORATION , MALIK, Irfan , NAG, Somnath
发明人： MALIK, Irfan , NAG, Somnath
IPC分类号： G06K9/00
摘要： Various computer-implemented methods are provided. One computer-implemented method for determining information about a defect detected on a wafer after an immersion lithography (IL) process is performed on the wafer includes comparing inspection results for the defect to data in a defect library for different types of IL defects and determining the information about the defect based on results of the comparison. One computer-implemented method (figure 4) for binning defects detected on a wafer after an IL process is performed on the wafer includes comparing one or more characteristics of the defects (48) to one or more characteristics of IL defects (50) and one or more characteristics of non-IL defects (52). The method also includes binning the defects having one or more characteristics that substantially match the one or more characteristics of the IL defects and the non-IL defects in different groups.

4. 发明申请

WO2007143449A2 DETERMINING INFORMATION ABOUT DEFECTS OR BINNING DEFECTS DETECTED ON A WAFER AFTER AN IMMERSION LITHOGRAPHY PROCESS IS PERFORMED ON THE WAFER 审中-公开
标题翻译：确定在WAFER上进行浸渍过程之后检测到的缺陷或发生的缺陷的信息
公开(公告)号：WO2007143449A2
公开(公告)日：2007-12-13
申请号：PCT/US2007069867
申请日：2007-05-29
申请人： KLA TENCOR TECH CORP , MALIK IRFAN , NAG SOMNATH
发明人： MALIK IRFAN , NAG SOMNATH
IPC分类号： G06K9/00
CPC分类号： G01N21/9501 , G01N21/4738 , G06T7/001 , G06T2207/30148
摘要： Various computer-implemented methods are provided. One computer-implemented method for determining information about a defect detected on a wafer after an immersion lithography (IL) process is performed on the wafer includes comparing inspection results for the defect to data in a defect library for different types of IL defects and determining the information about the defect based on results of the comparison. One computer-implemented method for binning defects detected on a wafer after an IL process is performed on the wafer includes comparing one or more characteristics of the defects to one or more characteristics of IL defects and one or more characteristics of non-IL defects. The method also includes binning the defects having one or more characteristics that substantially match the one or more characteristics of the IL defects and the non-IL defects in different groups.
摘要翻译：提供了各种计算机实现的方法。在晶片上执行浸没光刻（IL）处理之后，确定关于在晶片上检测到的缺陷的信息的计算机实现方法包括将缺陷的检查结果与不同类型的IL缺陷的缺陷库中的数据进行比较，并且确定基于比较结果的缺陷信息。在晶片上执行IL处理之后，在晶片上检测到的缺陷的计算机实现方法包括将缺陷的一个或多个特征与IL缺陷的一个或多个特征以及非IL缺陷的一个或多个特征进行比较。该方法还包括将具有基本上与不同组中的IL缺陷和非IL缺陷的一个或多个特征基本一致的一个或多个特性的缺陷合并。

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