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1. 发明申请

WO2008002760A1 PHASE CHANGE ALLOY ETCH 审中-公开
标题翻译：相变合金蚀刻
公开(公告)号：WO2008002760A1
公开(公告)日：2008-01-03
申请号：PCT/US2007/070795
申请日：2007-06-08
申请人： LAM RESEARCH CORPORATION , FU, Qian , LIU, Shenjian , LEE, Linda, Fung-Ming
发明人： FU, Qian , LIU, Shenjian , LEE, Linda, Fung-Ming
IPC分类号： H01L45/00 , H01J37/32
CPC分类号： H01J37/3244 , H01J2237/3341 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： A method of forming devices is provided. A phase change layer is provided. The phase change layer is etched by providing an etch gas comprising a bromine containing compound and forming a plasma from the etch gas. The phase change layer is of a material that may be heated by a current and then when cooled, either forms an amorphous material or a crystalline material, depending on how fast the material is cooled. In addition, the amorphous material has a resistance at least several times greater than the crystalline material.
摘要翻译：提供了一种形成装置的方法。提供了相变层。通过提供包含含溴化合物的蚀刻气体并从蚀刻气体形成等离子体来蚀刻相变层。相变层是可以被电流加热然后冷却的材料，根据材料的冷却速度而形成非晶材料或结晶材料。此外，无定形材料具有比结晶材料至少几倍的电阻。

2. 发明申请

WO2007030522B1 SELECTIVITY ETCH OF FILMS WITH HIGH DIELECTRIC CONSTANT WITH H2 ADDITION 审中-公开
标题翻译：添加H2的高介电常数膜的选择性蚀刻
公开(公告)号：WO2007030522B1
公开(公告)日：2007-07-12
申请号：PCT/US2006034688
申请日：2006-09-06
申请人： LAM RES CORP , LIU SHENJIAN , LEE LINDA FUNG-MING , CHEN ANTHONY
发明人： LIU SHENJIAN , LEE LINDA FUNG-MING , CHEN ANTHONY
IPC分类号： H01L21/311 , H01L21/00
CPC分类号： H01L21/31116 , H01L21/31122 , H01L21/67069
摘要： A method for selectively etching a high k layer with respect to a silicon based material is provided. The high k layer is placed into an etch chamber. An etchant gas is provided into the etch chamber, wherein the etchant gas comprises H 2 . A plasma is generated from the etchant gas to selectively etch the high k layer with respect to a silicon based material.
摘要翻译：提供了一种用于相对于硅基材料选择性地蚀刻高k层的方法。高k层置于蚀刻室中。蚀刻剂气体被提供到蚀刻室中，其中蚀刻剂气体包括H 2/2。从蚀刻剂气体产生等离子体以相对于硅基材料选择性蚀刻高k层。

3. 发明申请

WO2007030522A3 SELECTIVITY ETCH OF FILMS WITH HIGH DIELECTRIC CONSTANT WITH H2 ADDITION 审中-公开
公开(公告)号：WO2007030522A3
公开(公告)日：2007-05-03
申请号：PCT/US2006034688
申请日：2006-09-06
申请人： LAM RES CORP , LIU SHENJIAN , LEE LINDA FUNG-MING , CHEN ANTHONY
发明人： LIU SHENJIAN , LEE LINDA FUNG-MING , CHEN ANTHONY
IPC分类号： H01L21/311 , H01L21/00
CPC分类号： H01L21/31116 , H01L21/31122 , H01L21/67069
摘要： A method for selectively etching a high k layer with respect to a silicon based material is provided. The high k layer is placed into an etch chamber. An etchant gas is provided into the etch chamber, wherein the etchant gas comprises H 2 . A plasma is generated from the etchant gas to selectively etch the high k layer with respect to a silicon based material.

4. 发明申请

WO2007030522A2 SELECTIVITY ETCH OF FILMS WITH HIGH DIELECTRIC CONSTANT WITH H2 ADDITION 审中-公开
标题翻译：具有H2添加剂的高介电常数的膜的选择性蚀刻
公开(公告)号：WO2007030522A2
公开(公告)日：2007-03-15
申请号：PCT/US2006/034688
申请日：2006-09-06
申请人： LAM RESEARCH CORPORATION , LIU, Shenjian , LEE, Linda Fung-Ming , CHEN, Anthony
发明人： LIU, Shenjian , LEE, Linda Fung-Ming , CHEN, Anthony
IPC分类号： H01L21/311 , H01L21/00
CPC分类号： H01L21/31116 , H01L21/31122 , H01L21/67069
摘要： A method for selectively etching a high k layer with respect to a silicon based material is provided. The high k layer is placed into an etch chamber. An etchant gas is provided into the etch chamber, wherein the etchant gas comprises H 2 . A plasma is generated from the etchant gas to selectively etch the high k layer with respect to a silicon based material.
摘要翻译：提供了一种相对于硅基材料选择性地蚀刻高k层的方法。将高k层放置在蚀刻室中。蚀刻气体被提供到蚀刻室中，其中蚀刻剂气体包括H 2。从蚀刻剂气体产生等离子体，以相对于硅基材料选择性地蚀刻高k层。

5. 发明申请

WO2006130744A1 TUNGSTEN SILICIDE ETCH PROCESS WITH REDUCED ETCH RATE MICRO-LOADING 审中-公开
标题翻译： TUNGSTEN硅胶蚀刻工艺具有降低的刻蚀速率微加载
公开(公告)号：WO2006130744A1
公开(公告)日：2006-12-07
申请号：PCT/US2006/021214
申请日：2006-05-31
申请人： LAM RESEARCH CORPORATION , TAN, Sok, Kiow , LIU, Shenjian , SINGH, Harmeet , LEE, Sam, Do , LEE, Linda Fung-Ming
发明人： TAN, Sok, Kiow , LIU, Shenjian , SINGH, Harmeet , LEE, Sam, Do , LEE, Linda Fung-Ming
IPC分类号： H01L21/3213
CPC分类号： H01L21/28061 , H01L21/32137
摘要： The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing chamber, the substrate having a metal silicide layer formed thereon and a patterned mask defined over the metal silicide layer. The method also includes supplying an etching gas mixture of a fluorine-containing gas, a chlorine-containing gas, a nitrogen- containing gas, and an oxygen-containing gas to the plasma processing chamber, wherein the ratio of the nitrogen-containing gas to the fluorine-containing gas is between about 5 to about 15. In addition, the method includes generating a plasma in the plasma processing chamber using the supplied etching gas mixture to etch the metal silicide layer in regions not covered by the patterned mask, the patterned mask defining dense regions and isolated regions, wherein the generated plasma is configured to remove the metal silicide layer in the dense regions and the isolated regions at a reduced etch rate micro-loading.
摘要翻译：实施例提供了一种改进的硅化钨蚀刻工艺，具有降低的蚀刻速率微负载效应。在一个实施例中，提供了蚀刻形成在基板上的层的方法。该方法包括将衬底提供到等离子体处理室中，所述衬底具有形成在其上的金属硅化物层和限定在金属硅化物层上的图案化掩模。该方法还包括向等离子体处理室供应含氟气体，含氯气体，含氮气体和含氧气体的蚀刻气体混合物，其中含氮气体与含氟气体在约5至约15之间。此外，该方法包括使用所提供的蚀刻气体混合物在等离子体处理室中产生等离子体，以在未被图案化掩模覆盖的区域中蚀刻金属硅化物层，掩模，其限定致密区域和隔离区域，其中所产生的等离子体被配置为以降低的蚀刻速率微负载去除密集区域和隔离区域中的金属硅化物层。

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