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    • 2. 发明申请
    • QUANTUM DOT PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF
    • 量子光伏器件及其制造方法
    • WO2010024629A3
    • 2010-04-29
    • PCT/KR2009004852
    • 2009-08-28
    • KOREA RES INST OF STANDARDSKIM KYUNG JOONGLEE WOOKIM YONG SUNGKIM YOUNG HEONHONG SEUNG HUIYUN WAN SOOKANG SANG WOO
    • KIM KYUNG JOONGLEE WOOKIM YONG SUNGKIM YOUNG HEONHONG SEUNG HUIYUN WAN SOOKANG SANG WOO
    • H01L31/042
    • H01L31/035218H01L31/18
    • The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.
    • 本发明提供一种基于半导体的光电器件及其制造方法。 基于半导体的光电器件能够吸收宽带波长的光,并且由于具有高的电子 - 空穴对分离效率,因此光电转换效率高。 更具体地说,制造光伏器件的方法包括以下步骤:a)在p型或n型半导体衬底上形成薄的半导体量子点膜,其中薄的半导体量子点膜包括介质内的半导体量子点, 与半导体衬底掺杂相同类型的杂质; b)通过部分蚀刻形成孔阵列,其中孔阵列穿透薄的半导体量子点膜; c)在其上形成有孔阵列的薄半导体量子点膜上沉积半导体衬底掺杂杂质的半导体; 以及d)在所述半导体上顺序形成透明导电膜和上电极,其中所述互补杂质被掺杂并在所述半导体衬底的下部形成下电极。
    • 10. 发明申请
    • ANTI-DR5 ANTIBODY WITH IMPROVED AFFINITY AND STABILITY, AND COMPOSITION FOR CANCER PREVENTION OR TREATMENT INCLUDING SAME
    • 具有改善的亲和力和稳定性的抗DR5抗体,以及用于癌症预防或治疗的组合物,包括相同的
    • WO2010047509A9
    • 2010-09-02
    • PCT/KR2009006036
    • 2009-10-20
    • AJOU UNIV IND ACAD COOP FOUNDKIM YONG SUNGKWON MYUNG HEELEE SEUNG HYUNPARK KYUNG JIN
    • KIM YONG SUNGKWON MYUNG HEELEE SEUNG HYUNPARK KYUNG JIN
    • C07K16/28A61K39/395A61P35/00C12N15/13
    • C07K16/2878A61K2039/505C07K2317/56C07K2317/565
    • The present invention relates to an anti-DR5 antibody with improved affinity and stability that specifically binds to the death receptor 5 (DR5) to destroy cancer cells effectively and the composition for cancer prevention or treatment including the same. The anti-DR5 antibody of the present invention causes mutageneses on the amino acid residues of VH-CDR2 and VH-CDR3 within the heavy chain variable region and the amino acid residue of VL-CDR3 within the light chain variable region of HW1 which is the known anti-DR5 antibody, and replaces the framework within the heavy chain variable region from a VH6 subtype to a VH3 subtype and replaces the framework within the light chain variable region with the framework part of Vk1 or Vk3 so that affinity and stability are improved over the known anti-DR5 antibody, HW1. In addition, the anti-DR5 antibody of the present invention effectively induces cell death with respect to TRAIL-sensitive cancer cells that express DR5 and TRAIL-resistant cancer cells that express DR5 by autophagy so that it may be usefully employed in preventing or treating cancers caused by DR5 expression.
    • 本发明涉及特异性结合死亡受体5(DR5)以有效破坏癌细胞的具有改善的亲和力和稳定性的抗DR5抗体,并且涉及用于癌症预防或治疗的组合物以及包含其的组合物。 本发明的抗DR5抗体对重链可变区内的VH-CDR2和VH-CDR3的氨基酸残基和HW1的轻链可变区内的VL -CDR3的氨基酸残基进行诱变, 并将重链可变区内的框架从VH6亚型替换为VH3亚型并用Vk1或Vk3的框架部分置换轻链可变区内的框架,从而改善了亲和性和稳定性 已知的抗DR5抗体HW1。 此外,本发明的抗DR5抗体相对于表达DR5和TRAIL抗性癌细胞的TRAIL敏感性癌细胞,通过自噬来有效地诱导细胞死亡,从而其可有效用于预防或治疗癌症 由DR5表达引起。