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1. 发明申请

WO2010085459A1 SILICON BASED OPTO-ELECTRIC CIRCUITS 审中-公开
标题翻译：硅基光电路
公开(公告)号：WO2010085459A1
公开(公告)日：2010-07-29
申请号：PCT/US2010/021444
申请日：2010-01-20
申请人： RAYTHEON COMPANY , TABATABAIE, Kamal , LAROCHE, Jeffrey, R. , KAPER, Valery, S. , BETTENCOURT, John, P. , IP, Kelly, P.
发明人： TABATABAIE, Kamal , LAROCHE, Jeffrey, R. , KAPER, Valery, S. , BETTENCOURT, John, P. , IP, Kelly, P.
IPC分类号： H01S5/026 , H01S5/183 , H01L21/331
CPC分类号： H01S5/0261 , H01L27/0617 , H01S5/021 , H01S5/02248 , H01S5/0262 , H01S5/183 , H01S5/2214 , H01S2301/173
摘要： A semiconductor structure, comprising: a substrate (12); a seed layer (16) over an upper surface of the substrate (12); a semiconductor layer (20) disposed over the seed layer (16); a transistor device (22, 24) in the semiconductor layer (20); wherein the substrate (12) has an aperture (42) therein, such aperture (42) extending from a bottom surface of the substrate (12) and terminating on a bottom surface of the seed layer (16); and an opto-electric structure (44) disposed on the bottom surface of the seed layer (16).
摘要翻译：一种半导体结构，包括：衬底（12）; 在所述基板（12）的上表面上方的种子层（16）; 设置在种子层（16）上的半导体层（20）; 半导体层（20）中的晶体管器件（22,24）; 其中所述基底（12）中具有孔（42），所述孔（42）从所述基底（12）的底表面延伸并终止于所述籽晶层（16）的底表面上。以及设置在种子层（16）的底表面上的光电结构（44）。

2. 发明申请

WO2010085458A1 ELECTRICAL CONTACTS FOR CMOS DEVICES AND III-V DEVICES FORMED ON A SILICON SUBSTRATE 审中-公开
标题翻译：用于CMOS器件的电气接触和在硅衬底上形成的III-V器件
公开(公告)号：WO2010085458A1
公开(公告)日：2010-07-29
申请号：PCT/US2010/021443
申请日：2010-01-20
申请人： RAYTHEON COMPANY , TABATABAIE, Kamal , DAVIS, Michael, S. , LAROCHE, Jeffrey, R. , KAPER, Valery, S. , BETTENCOURT, John, P.
发明人： TABATABAIE, Kamal , DAVIS, Michael, S. , LAROCHE, Jeffrey, R. , KAPER, Valery, S. , BETTENCOURT, John, P.
IPC分类号： H01L21/8258 , H01L23/485 , H01L27/06 , H01L27/092
CPC分类号： H01L21/8258 , H01L23/485 , H01L23/53238 , H01L27/0605 , H01L27/0623 , H01L27/0922 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure having a substrate (12) a seed layer (13) over the substrate; a silicon layer (22) disposed on the seed layer; a transistor device (27) in the silicon layer; a III-V device disposed on the seed layer; and a plurality of electrical contacts, each one of the electrical contacts having a layer (32) of TiN or TaN and a layer (34) of copper or aluminum on the layer of TaN or TiN, one of the electrical contacts being electrically connected to the transistor (27) and another one of the electrical contacts being electrically connected to the III-V device.
摘要翻译：一种半导体结构，在衬底上具有衬底（12）种子层（13）; 设置在种子层上的硅层（22）; 硅层中的晶体管器件（27）; 设置在种子层上的III-V装置; 和多个电触点，每个电触点具有TiN或TaN的层（32）和TaN或TiN层上的铜或铝层（34），其中一个电触点电连接到晶体管（27）和另一个电触点电连接到III-V器件。

3. 发明申请

WO2007145802A1 TRANSMIT/RECEIVE MODULE HAVING BI-DIRECTIONAL FREQUENCY CONVERSION SECTION 审中-公开
标题翻译：具有双向频率转换部分的发送/接收模块
公开(公告)号：WO2007145802A1
公开(公告)日：2007-12-21
申请号：PCT/US2007/012586
申请日：2007-05-24
申请人： RAYTHEON COMPANY , ADLERSTEIN, Michael, G. , KAPER, Valery, S.
发明人： ADLERSTEIN, Michael, G. , KAPER, Valery, S.
IPC分类号： H04B1/40
CPC分类号： H04B1/403
摘要： A transmit/receive module having a frequency conversion circuit. The circuit includes a mixer having a pair of ports and a third port coupled to a local oscillator signal source. A transmit path transmits energy from the module and a receive path receives for the module. Both the receive path and the transmit path pass through the pair of ports of the mixer.
摘要翻译：具有频率转换电路的发送/接收模块。该电路包括具有一对端口和耦合到本地振荡器信号源的第三端口的混频器。发射路径从模块传输能量，接收路径接收模块。接收路径和发送路径均通过混频器的一对端口。

4. 发明申请

WO2007064451A1 PHASED ARRAY RADAR SYSTEMS AND SUBASSEMBLIES THEREOF 审中-公开
标题翻译：相位阵列雷达系统及其分类
公开(公告)号：WO2007064451A1
公开(公告)日：2007-06-07
申请号：PCT/US2006/043485
申请日：2006-11-08
申请人： RAYTHEON COMPANY , ADLERSTEIN, Michael, G. , KAPER, Valery, S.
发明人： ADLERSTEIN, Michael, G. , KAPER, Valery, S.
IPC分类号： H03L7/24 , H01Q3/42 , G01S7/03
CPC分类号： H03L7/24 , G01S7/032 , G01S2013/0254 , H01Q3/30 , H01Q3/42
摘要： A phase shifter (92, 17a..., 16n) includes a coupler (34)having a pair of output terminals for providing a pair of signals having a frequency f and having a relative phase shift difference of mp/2 radians, where m is an integer, and a switch (36) is included having a pair of inputs, each one of the pair of inputs being coupled to a corresponding one of output terminals of the coupler (34) . The switch (36) has an output, one of the inputs of the switch being coupled to the output of the switch selectively in accordance with a first control signal (39) fed to the switch. An oscillator (38) is included having a tunable resonant circuit (41) coupled to the output of the switch (36) , the frequency of the resonant circuit (41) being detuned from the nominal resonant frequency to shift the nominal resonant frequency relative to the harmonic of the signal at the output of the switch.
摘要翻译：移相器（92,17a ...，16n）包括具有一对输出端子的耦合器（34），用于提供具有频率f并具有mp / 2弧度的相对相位差的一对信号，其中m 是整数，并且包括具有一对输入的开关（36），所述一对输入中的每一个耦合到耦合器（34）的对应的一个输出端子。开关（36）具有输出，开关的一个输入根据馈送到开关的第一控制信号（39）选择性地耦合到开关的输出端。包括具有耦合到开关（36）的输出的可调谐谐振电路（41）的振荡器（38），谐振电路（41）的频率与标称谐振频率失谐，以使标称谐振频率相对于交换机输出端的信号谐波。

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