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    • 5. 发明申请
    • EPOXY REMOVAL PROCESS FOR MICROFORMED ELCTROPLATED DEVICES
    • 用于微型电化学器件的环氧去除方法
    • WO2008057367A1
    • 2008-05-15
    • PCT/US2007/023041
    • 2007-10-31
    • MICROCHEM CORP.MILLER, HarrisJOHNSON, Donald, W.
    • MILLER, HarrisJOHNSON, Donald, W.
    • H01L23/52
    • B81C99/0095G03F7/423G03F7/425
    • The present invention is directed to a method of removing epoxy-based photoresist from a manufactured metallic microstructure or deep etched via, comprising the steps of (1) providing a form comprising an epoxy-based photoresist and a manufactured metallic microstructure; (2) optionally exposing the form to a solvent, aqueous alkali, or amine-based photoresist stripper; (3) exposing the form to an alkali permanganate oxidizing solution to remove the form from the manufactured metallic microstructure, the alkali permanganate oxidizing solution comprising from about 4% to about 9% permanganate by weight, based on the total weight of the alkali permanganate solution, and from about 3% to about 6% alkali by weight, based on the total weight of the alkali permanganate solution; and (4) exposing the manufactured metallic microstructure to a neutralizing solution comprising from about 5% to about 10% by weight of an acid and from about 1% to about 10% by weight of a reducing agent, all weight percents being based on the total weight of the neutralizing solution.
    • 本发明涉及从制造的金属微结构或深蚀刻通孔去除环氧系光致抗蚀剂的方法,其包括以下步骤:(1)提供包含环氧基光致抗蚀剂和制造的金属微结构的形式; (2)任选地将形式暴露于溶剂,碱水溶液或胺类光致抗蚀剂剥离剂; (3)将所述形式暴露于碱金属高锰酸盐氧化溶液中以从所制备的金属微结构中除去所述形式,所述碱金属高锰酸盐氧化溶液包含约4%至约9%的高锰酸盐,基于所述碱金属高锰酸盐溶液的总重量 ,和约3%至约6%的碱,基于碱金属高锰酸盐溶液的总重量; 和(4)将所制造的金属微观结构暴露于包含约5%至约10%重量的酸和约1%至约10%重量的还原剂的中和溶液中,所有重量百分数基于 中和溶液的总重量。