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    • 3. 发明申请
    • METHOD AND APPARATUS FOR DIFFRACTIVE TRANSFER OF A MASK GRATING
    • 用于掩模蚀刻的差异转移的方法和装置
    • WO2003007075A2
    • 2003-01-23
    • PCT/IB2002/003099
    • 2002-05-21
    • IBSEN PHOTONICS A/SHANSEN, Poul-Erik
    • HANSEN, Poul-ErikIBSEN, Per, Eld
    • G03F
    • G03F7/7035
    • An improved technique of exposing a photoresist through a grating mask reduces the occurrence of overlapping gratings and also avoids distortions in the exposed mask when there is a gap between the contact mask and the photoresist layer. The technique is particularly well suited to forming Bragg gratings on semiconductors and other materials that are used for wavelength selection in, for example, optical communications applications. The technique employs a phase grating held close to, but out of contact with, the photoresist layer. Amongst the advantages provided by the present invention is that the requirements of the permissible thickness of the photoresist layer suitable for writing high visibility gratings are relaxed, thus reducing the complexity and costs for processing the substrate.
    • 通过光栅掩模曝光光致抗蚀剂的改进技术减少了重叠光栅的出现,并且在接触掩模和光致抗蚀剂层之间存在间隙时也避免了曝光掩模中的失真。 该技术特别适用于在例如光通信应用中用于波长选择的半导体和其它材料上形成布拉格光栅。 该技术采用保持接近但不与光致抗蚀剂层接触的相位光栅。 本发明提供的优点在于,适用于写入高可见度光栅的光致抗蚀剂层的允许厚度的要求被放宽,从而降低了处理衬底的复杂性和成本。