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1. 发明申请

WO2006124255A3 SYSTEM AND METHODS FOR POLISHING A WAFER 审中-公开
标题翻译：抛光抛光的系统和方法
公开(公告)号：WO2006124255A3
公开(公告)日：2007-04-12
申请号：PCT/US2006016615
申请日：2006-05-02
申请人： SEMITOOL INC , BERGMAN ERIC J , GEBHART THOMAS MAXIMILIAN
发明人： BERGMAN ERIC J , GEBHART THOMAS MAXIMILIAN
IPC分类号： H01L21/26 , B44C1/22 , H01L21/302 , H01L21/42 , H01L21/461
CPC分类号： H01L21/02019 , H01L21/02024 , H01L21/3065 , H01L21/6708 , H01L21/67086
摘要： In methods for smoothing or polishing a surface of a wafer, such as a silicon wafer, a liquid layer is formed on a surface of the wafer. The liquid layer may be an invisible microscopic layer, or a visible macroscopic layer. A flow of an oxidizing gas is directed over, against or onto the liquid layer of the surface of the wafer, in the presence of an etchant. The flow of gas thins the liquid layer at high points or areas on the surface of the wafer more than at low points or areas on the wafer surface. Consequently, the high points are oxidized and etched away more than the low points. As a result, the wafer surface is smoothed and polished.
摘要翻译：在用于平滑或抛光诸如硅晶片的晶片的表面的方法中，在晶片的表面上形成液体层。液体层可以是不可见的微观层或可见的宏观层。氧化气体的流动在蚀刻剂的存在下被引导到晶片的表面的液体层上，抵靠在该液体层上。在晶片表面的高点或多个区域，气体的流动比在晶片表面的低点或区域更薄。因此，高点比低点被氧化和蚀刻掉。结果，晶片表面被平滑和抛光。

2. 发明申请

WO2006124255A2 SYSTEM AND METHODS FOR POLISHING A WAFER 审中-公开
标题翻译：抛光抛光的系统和方法
公开(公告)号：WO2006124255A2
公开(公告)日：2006-11-23
申请号：PCT/US2006/016615
申请日：2006-05-02
申请人： SEMITOOL, INC. , BERGMAN, Eric, J. , GEBHART, Thomas, Maximilian
发明人： BERGMAN, Eric, J. , GEBHART, Thomas, Maximilian
IPC分类号： B44C1/22
CPC分类号： H01L21/02019 , H01L21/02024 , H01L21/3065 , H01L21/6708 , H01L21/67086
摘要： In methods for smoothing or polishing a surface of a wafer, such as a silicon wafer, a liquid layer is formed on a surface of the wafer. The liquid layer may be an invisible microscopic layer, or a visible macroscopic layer. A flow of an oxidizing gas is directed over, against or onto the liquid layer of the surface of the wafer, in the presence of an etchant. The flow of gas thins the liquid layer at high points or areas on the surface of the wafer more than at low points or areas on the wafer surface. Consequently, the high points are oxidized and etched away more than the low points. As a result, the wafer surface is smoothed and polished.
摘要翻译：在用于平滑或抛光诸如硅晶片的晶片的表面的方法中，在晶片的表面上形成液体层。液体层可以是不可见的微观层或可见的宏观层。氧化气体的流动在蚀刻剂的存在下被引导到晶片的表面的液体层上，靠近或向上。在晶片表面的高点或多个区域，气体的流动比在晶片表面的低点或区域更薄。因此，高点比低点被氧化和蚀刻掉。结果，晶片表面被平滑和抛光。

3. 发明申请

WO2009144522A1 A HEMODIALYSIS OR HEMO(DIA)FILTRATION APPARATUS AND A METHOD FOR CONTROLLING A HEMODIALYSIS OR HEMO(DIA)FILTRATION APPARATUS 审中-公开
标题翻译：血液透析或HEMO（DIA）过滤装置和控制HEMODIALYSIS或HEMO（DIA）过滤装置的方法
公开(公告)号：WO2009144522A1
公开(公告)日：2009-12-03
申请号：PCT/IB2008/001308
申请日：2008-05-26
申请人： GAMBRO LUNDIA AB , WALLENBORG, Anders , GEBHART, Thomas , SUFFRITTI, Mauro , MASALA, Pietro
发明人： WALLENBORG, Anders , GEBHART, Thomas , SUFFRITTI, Mauro , MASALA, Pietro
IPC分类号： A61M1/34 , A61M1/16
CPC分类号： A61M1/3639 , A61M1/342 , A61M1/3434 , A61M1/3437 , A61M1/3441 , A61M2205/3331 , G06F19/00
摘要： In a hemodiafiltration apparatus, a control and command unit (11) halts a replacement fluid supply pump (8) and contemporaneously modifies the control mode of a blood pump (1) passing from a control based on the pump velocity to a control based on the blood pressure measured by a sensor (12) arranged downstream of a hemodiafilter (3). The aim is to prevent risks due to excessive hemoconcentration in the blood circuit between the ultrafiltration zone and the infusion zone.
摘要翻译：在血液透析过滤装置中，控制和指令单元（11）停止替换流体供应泵（8），同时将基于泵速度的控制通过的血液泵（1）的控制模式同时修改为基于通过布置在血液透析滤器（3）下游的传感器（12）测量的血压。目的是防止超滤区域和输注区域之间的血液循环过度血液浓缩引起的风险。

4. 发明申请

WO1997044831A1 STRIP DETECTOR 审中-公开
标题翻译：条探测器
公开(公告)号：WO1997044831A1
公开(公告)日：1997-11-27
申请号：PCT/DE1997001015
申请日：1997-05-20
申请人： MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V. , KEMMER, Josef , LUTZ, Gerhard , RICHTER, Rainer , STRÜDER, Lothar , ANDRICEK, Ladislav , GEBHART, Thomas
发明人： MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V.
IPC分类号： H01L31/115
CPC分类号： H01L31/1185 , H01L31/115
摘要： The invention relates to a strip detector and a process for producing a strip detector for detecting ionising particles and/or radiation. Said strip detector has a silicon substrate which provides mutually spaced n-doped regions and therebetween a p-doped insulation region at least on a substrate surface in the form of strips and voltage supply regions, and a first insulation layer applied to a substrate surface, and metal strips arranged above the n-doped regions. The invention is characterised in that directly above the first insulation layer at least one other insulation layer is provided, and that at least one of the insulation layers is interrupted, in projection over the region, between two adjacent n-doped regions, and the p-doped insulation region has a lateral p-doping agent concentration distribution which provides in the region below the interruption of the interrupted insulation layer a higher doping agent concentration than in the insulation regions directly adjoining the n-doped regions.
摘要翻译：公开了一种带材检测器和用于产生用于检测电离粒子和/或辐射，包括硅衬底的条带检测器的方法中，至少一个基板表面上的相互隔开的条纹和电压供给器区域n掺杂区和p的n型掺杂区之间提供掺杂隔离区，施加到上述设置在衬底表面第一绝缘层以及金属带的层，所述n型掺杂区域。本发明的特征在于，进一步的绝缘体层形成在第一绝缘层至少，并且该绝缘体层中的至少一个是在投影相邻的两个n型掺杂区之间的中间区的上方中断直接提供，并且该p型掺杂的隔离区的横向p 具有-Dotierstoffkonzentrationsverteilung这比在紧邻n掺杂区隔离区域被中断的绝缘体层的中断下方的区域提供了更高的掺杂剂浓度。

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