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1. 发明申请

WO03024172A8 A METHOD OF ETCHING COPPER ON CARDS 审中-公开
标题翻译：铜的蚀刻方法
公开(公告)号：WO03024172A8
公开(公告)日：2004-05-06
申请号：PCT/SE0201602
申请日：2002-09-09
申请人： OBDUCAT AB , FRENNESSON GOERAN , BIERINGS GUST , BJARNASON BJARNI , SJOEBERG JENNY
发明人： FRENNESSON GOERAN , BIERINGS GUST , BJARNASON BJARNI , SJOEBERG JENNY
IPC分类号： C25F3/02 , C25F7/00 , H05K3/07
CPC分类号： H05K3/07 , C25F3/02 , C25F7/00
摘要： Etching of copper on a card is achieved by applying an electrical voltage between a cathode (102) and the card (42), the card (42) thereby forming an anode. The cathode (102) and the card (42) are immersed in an electrolyte comprising a first component, which may be reduced from a first state in the form of an ion having a metal atom with a first positive oxidation number to a second state in the form of an ion having said metal atom with a second positive oxidation number, which is less than said first positive oxidation number. A first redox potential in the electrolyte for reduction from the first to the second state is larger than a second redox potential in the electrolyte for reduction of divalent copper ions to metallic copper. During the etching metallic copper on the card is oxidised and transferred into positively charged copper ions while the first component is reduced from its first state to its second state. The quality of the etched structures on the card is improved since no metallic copper is precipitated on the cathode.
摘要翻译：通过在阴极（102）和卡（42）之间施加电压，卡（42）从而形成阳极来实现卡上铜的蚀刻。将阴极（102）和卡（42）浸入包含第一组分的电解质中，该第一组分可以从具有第一正氧化数的金属原子的离子形式的第一状态还原为第二状态具有第二正氧化数的具有所述金属原子的离子的形式，其小于所述第一正氧化数。用于从第一状态到第二状态还原的电解质中的第一氧化还原电位大于用于还原二价铜离子至金属铜的电解质中的第二氧化还原电位。在蚀刻期间，卡上的金属铜被氧化并转移到带正电荷的铜离子中，同时第一组分从第一状态降低到其第二状态。卡上蚀刻结构的质量得到改善，因为阴极上没有金属铜沉淀。

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