专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011063365A9 GAN WHISKERS AND METHODS OF GROWING THEM FROM SOLUTION 审中-公开
标题翻译： GAN WHISKERS及其从解决方案中增长的方法
公开(公告)号：WO2011063365A9
公开(公告)日：2011-08-04
申请号：PCT/US2010057698
申请日：2010-11-23
申请人： US GOV SEC NAVY , FEIGELSON BORIS N , HITE JENNIFER K , KUB FRANCIS J , EDDY CHARLES R JR
发明人： FEIGELSON BORIS N , HITE JENNIFER K , KUB FRANCIS J , EDDY CHARLES R JR
IPC分类号： H01L21/20
CPC分类号： C30B9/00 , C30B9/10 , C30B19/00 , C30B19/02 , C30B19/04 , C30B19/10 , C30B29/406 , C30B29/62
摘要： Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
摘要翻译：提供了从溶液中生长的毫米级GaN单晶晶格，也称为GaN晶须，并在中等温度和接近大气压下制备了其制备方法。 GaN晶须可以在氮压力下经受温度梯度的反应容器中从GaN源生长。 GaN源可以作为交换反应的一部分原位形成，或者可以是预先存在的GaN材料。作为施加的温度梯度，将GaN源溶解在溶剂中并作为毫米级单晶细丝从溶液中析出。

2. 发明申请

WO2006039065A2 METHOD OF GROWING GROUP III NITRIDE CRYSTALS 审中-公开
标题翻译：生长III族氮化物晶体的方法
公开(公告)号：WO2006039065A2
公开(公告)日：2006-04-13
申请号：PCT/US2005031621
申请日：2005-09-01
申请人： REPRESENTED BY THE SECRETARY O , FEIGELSON BORIS N , HENRY RICHARD L
发明人： FEIGELSON BORIS N , HENRY RICHARD L
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/403 , C30B9/12 , C30B29/406
摘要： In one embodiment, this invention pertains to a process for making single crystal gallium nitride in the region of the phase diagram of gallium nitride where gallium nitride is thermodynamically stable. The process includes the steps of placing a charged reaction vessel into a chamber, the reaction vessel containing a gallium nitride source and a slat-based solvent in contact therewith; heating the charge in the reaction vessel to render the solvent molten and to provide a temperature gradient in the molten solvent between the gallium nitride source and the growing single crystal gallium nitride in such a way that growing the single crystal gallium nitride will be in the region of the reaction vessel which, under operating conditions, will have a temperature near the low end of the temperature gradient and the gallium nitride source will be in the region of the reaction vessel which, under operating conditions, will have temperature near the high end of the temperature gradient; maintaining process conditions whereby the solvent is molten, with the gallium nitride from the gallium nitride source dissolving in the solvent under the impetus of the temperature gradient; precipitating gallium nitride out of the solvent; and discontinuing the heating step.
摘要翻译：在一个实施方案中，本发明涉及在氮化镓热力学稳定的氮化镓相图区域中制造单晶氮化镓的方法。该方法包括以下步骤：将带电荷的反应容器放入室中，该反应容器含有氮化镓源和与之接触的板条基溶剂; 加热反应容器中的电荷以使溶剂熔化，并且在氮化镓源和生长的单晶氮化镓之间的熔融溶剂中提供温度梯度，使得生长单晶氮化镓将位于该区域内在操作条件下，温度将接近温度梯度的低端并且氮化镓源将在反应容器的区域中，在操作条件下，该反应容器将具有接近高温的温度温度梯度; 在温度梯度的推动下维持溶剂熔融的工艺条件，其中来自氮化镓源的氮化镓溶解在溶剂中; 从溶剂中沉淀氮化镓; 并停止加热步骤。

3. 发明申请

WO2015154099A1 BASAL PLANE DISLOCATION ELIMINATION IN 4H-SIC BY PULSED RAPID THERMAL ANNEALING 审中-公开
标题翻译： 4H-SIC通过脉冲快速热退火进行的基本平面分解消除
公开(公告)号：WO2015154099A1
公开(公告)日：2015-10-08
申请号：PCT/US2015/034117
申请日：2015-06-04
申请人： THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF THE NAVY , TADJER, Marko, J. , FEIGELSON, Boris, N. , MAHADIK, Nadeemullah, A. , STAHLBUSH, Robert, E. , IMHOFF, Eugene, A. , GREENLEE, Jordan
发明人： TADJER, Marko, J. , FEIGELSON, Boris, N. , MAHADIK, Nadeemullah, A. , STAHLBUSH, Robert, E. , IMHOFF, Eugene, A. , GREENLEE, Jordan
IPC分类号： C23C12/00 , C23C20/08
CPC分类号： H01L21/3247 , H01L21/02529 , H01L21/02609 , H01L21/02667 , H01L21/324 , H01L29/1608
摘要： A method for removing existing basal plane dislocations (BPDs) from silicon carbide epilayers by using a pulsed rapid thermal annealing process where the BPDs in the epilayers were eliminated while preserving the epitaxial surface. This high temperature, high pressure method uses silicon carbide epitaxial layers with a carbon cap to protect the surface. These capped epilayers are subjected to a plurality of rapid heating and cooling cycles.
摘要翻译：通过使用脉冲快速热退火工艺从碳化硅外延层中去除现有基面位错（BPD）的方法，其中消除外延层中的BPD同时保留外延表面。这种高温高压法使用具有碳帽的碳化硅外延层来保护表面。这些加盖的外延层经受多个快速加热和冷却循环。

4. 发明申请

WO2015048445A1 ELIMINATION OF BASAL PLANE DISLOCATIONS IN POST GROWTH SILICON CARBIDE EPITAXIAL LAYERS BY HIGH TEMPERATURE ANNEALING WHILE PRESERVING SURFACE MORPHOLOGY 审中-公开
标题翻译：在保存表面形态时，通过高温退火消除后生长碳化硅外延层中的基底平面分布
公开(公告)号：WO2015048445A1
公开(公告)日：2015-04-02
申请号：PCT/US2014/057722
申请日：2014-09-26
申请人： THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY , MAHADIK, Nadeemmullah, A. , STAHLBUSH, Robert, E. , TADJER, Marko, J. , IMHOFF, Eugene, A. , FEIGELSON, Boris, N.
发明人： MAHADIK, Nadeemmullah, A. , STAHLBUSH, Robert, E. , TADJER, Marko, J. , IMHOFF, Eugene, A. , FEIGELSON, Boris, N.
IPC分类号： C30B29/36 , C30B15/00
CPC分类号： H01L21/02378 , C30B29/36 , C30B33/02 , H01L29/1608
摘要： A method to remove basal plane dislocations in post growth silicon carbide epitaxial layers by capping post growth silicon carbide epilayers with a graphite cap and annealing the capped silicon carbon epilayers at a temperature of 1750 °C or greater with a nitrogen overpressure of 60-110 psi, wherein basal plane dislocations in the epilayers are removed while surface morphology is preserved. Also disclosed is the related silicon carbide substrate material made by this method.
摘要翻译：通过用石墨盖封盖生长后的碳化硅外延层并在1750℃或更高的温度下在60-110psi的氮气超压下对封盖的硅碳外延层进行退火来去除后生长碳化硅外延层中的基面平面位错的方法其中去除外延层中的基面位错，同时保留表面形态。还公开了通过该方法制造的相关碳化硅衬底材料。

5. 发明申请

WO2011063365A1 GAN WHISKERS AND METHODS OF GROWING THEM FROM SOLUTION 审中-公开
标题翻译： GAN专业人员和从解决方案中发展壮大的方法
公开(公告)号：WO2011063365A1
公开(公告)日：2011-05-26
申请号：PCT/US2010/057698
申请日：2010-11-23
申请人： THE GOVERNMENT OF THE USA, as represented by THE SECRETARY OF THE NAVY , FEIGELSON, Boris, N. , HITE, Jennifer, K. , KUB, Francis, J. , EDDY, Charles, R., Jr.
发明人： FEIGELSON, Boris, N. , HITE, Jennifer, K. , KUB, Francis, J. , EDDY, Charles, R., Jr.
IPC分类号： H01L21/20
CPC分类号： C30B9/00 , C30B9/10 , C30B19/00 , C30B19/02 , C30B19/04 , C30B19/10 , C30B29/406 , C30B29/62
摘要： Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
摘要翻译：提供了从溶液中生长出的毫米级GaN单晶（也称为GaN晶须），并提供了在中等温度和接近大气压下制备它们的方法。 GaN晶须可以在氮气压力下经历温度梯度的反应容器中从GaN源生长。 GaN源可以原位形成为交换反应的一部分，或者可以是预先存在的GaN材料。由于所施加的温度梯度，GaN源溶解在溶剂中并作为毫米级单晶细丝从溶液中沉淀出来。

6. 发明申请

WO2009111202A1 METHOD OF GROWING GAN CRYSTALS FROM SOLUTION 审中-公开
标题翻译：从溶液中生长晶体的方法
公开(公告)号：WO2009111202A1
公开(公告)日：2009-09-11
申请号：PCT/US2009/034888
申请日：2009-02-23
申请人： THE GOVERNMENT OF USA, AS REPRESENTED BY THE SECRETARY OF THE NAVY NAVAL RESEARCH LABORATORY , FEIGELSON, Boris, N. , FRAZIER, Rachel, M.
发明人： FEIGELSON, Boris, N. , FRAZIER, Rachel, M.
IPC分类号： C30B17/00
CPC分类号： C30B29/406 , C30B9/10 , C30B29/403
摘要： A process for making gallium nitride crystals comprising the steps of charging a reaction vessel with a layer of one selected from a Group IA element nitride, a Group IIA element nitride, and combinations thereof, adding a layer of gallium, applying nitrogen pressure to prevent dissociation or decomposition, forming in situ a gallium nitride source by heating the charged reaction vessel to render the one selected from the group reacted with the gallium, forming in situ a solvent comprising the gallium and the one selected from the group released by an exchange reaction between the gallium and the one selected from the group, providing a temperature when formed gallium nitride will be dissolved in the formed solvent and providing a temperature difference in the solvent between the formed gallium nitride source and the growing single crystal gallium nitride, and growing a single crystal gallium nitride.
摘要翻译：一种制造氮化镓晶体的方法，包括以下步骤：用选自IA族元素氮化物，IIA族元素氮化物及其组合的一层填充反应容器，加入镓层，施加氮气压力以防止解离或分解，通过加热带电的反应容器使氮化镓源原位化，使选自组中的一个与镓反应，原位形成包含镓的溶剂和选自通过交换反应释放的溶剂的溶剂当形成的氮化镓时提供温度的镓和选自该组的镓将被溶解在所形成的溶剂中并且在所形成的氮化镓源和生长的单晶氮化镓之间的溶剂中提供温度差，并且生长单个晶体氮化镓。

7. 发明申请

WO2006039065A3 METHOD OF GROWING GROUP III NITRIDE CRYSTALS 审中-公开
公开(公告)号：WO2006039065A3
公开(公告)日：2006-04-13
申请号：PCT/US2005/031621
申请日：2005-09-01
申请人： THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY , FEIGELSON, Boris, N. , HENRY, Richard, L.
发明人： FEIGELSON, Boris, N. , HENRY, Richard, L.
IPC分类号： C30B11/00
摘要： In one embodiment, this invention pertains to a process for making single crystal gallium nitride in the region of the phase diagram of gallium nitride where gallium nitride is thermodynamically stable. The process includes the steps of placing a charged reaction vessel into a chamber, the reaction vessel containing a gallium nitride source and a slat-based solvent in contact therewith; heating the charge in the reaction vessel to render the solvent molten and to provide a temperature gradient in the molten solvent between the gallium nitride source and the growing single crystal gallium nitride in such a way that growing the single crystal gallium nitride will be in the region of the reaction vessel which, under operating conditions, will have a temperature near the low end of the temperature gradient and the gallium nitride source will be in the region of the reaction vessel which, under operating conditions, will have temperature near the high end of the temperature gradient; maintaining process conditions whereby the solvent is molten, with the gallium nitride from the gallium nitride source dissolving in the solvent under the impetus of the temperature gradient; precipitating gallium nitride out of the solvent; and discontinuing the heating step.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式