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    • 1. 发明申请
    • POLYMER LIGHT EMITTING DIODE
    • 聚合物发光二极管
    • WO1998020565A1
    • 1998-05-14
    • PCT/GB1997003019
    • 1997-11-07
    • UNIVERSITY OF DURHAMSAMUEL, Ifor, David, WilliamMONKMAN, AndrewREBOURT, EymardDAILEY, Stuart
    • UNIVERSITY OF DURHAM
    • H01L51/20
    • H01L51/5012Y10S428/917
    • Device adapted for light emission comprising a plurality of component layers of which a first outer layer (4) is adapted for electron injection, a second opposing outer layer is adapted for "hole injection" (2), and one or more intermediate layers (3, 7) arranged therebetween are adapted for charge semi-conduction, wherein the intermediate layer(s) comprise at least one semi-conducting polymer adapted for electron transport and/or hole blocking (7), and at least one semi-conducting polymer adapted for hole transport and/or electron blocking (3), wherein the at least one semi-conducting polymer adapted for electron transport and/or hole blocking (7) comprises polymer selected from a nitrogen and/or sulphur containing polymer which is partially or substantially conjugated, a semi-conducting polymer for use in the device and novel processes for the preparation thereof, component layers substantially free of charge carrier quenching or trapping moieties for use as semi-conductors, process for the production thereof and method for the operation thereof.
    • 适用于发光的装置,包括适于电子注入的第一外层(4)的多个部件层,第二相对的外层适于“空穴注入”(2)和一个或多个中间层(3) ,7)适于电荷半导体,其中所述中间层包括适于电子传输和/或空穴阻挡(7)的至少一种半导电聚合物,和至少一种适于 用于空穴传输和/或电子阻挡(3),其中适于电子传输和/或空穴阻挡的所述至少一种半导电聚合物(7)包含选自含氮和/或含硫聚合物的聚合物,其部分或基本上 共轭,用于该装置的半导体聚合物和其制备方法,基本上不含电荷载体猝灭或捕获部分的组分层用作半导体,方法 用于其生产及其操作方法。