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1. 发明申请

WO2007051795A1 METHOD AND APPARATUS FOR VARYING THE PROGRAMMING DURATION AND/OR VOLTAGE OF AN ELECTRICALLY FLOATING BODY TRANSISTOR, AND MEMORY CELL ARRAY IMPLEMENTING SAME 审中-公开
标题翻译：改变电浮动体晶体管的编程持续时间和/或电压的方法和装置，以及实现其的存储器单元阵列
公开(公告)号：WO2007051795A1
公开(公告)日：2007-05-10
申请号：PCT/EP2006/067968
申请日：2006-10-31
申请人： INNOVATIVE SILICON S.A. , POPOFF, Gregory A. , DE CHAMPS, Paul , DAGHIGHIAN, Hamid
发明人： POPOFF, Gregory A. , DE CHAMPS, Paul , DAGHIGHIAN, Hamid
IPC分类号： G11C11/406
CPC分类号： G11C5/025 , G11C7/14 , G11C7/22 , G11C11/404 , G11C11/406 , G11C11/4074 , G11C11/4076 , G11C11/4099 , G11C2211/4016 , G11C2211/4061 , G11C2211/4068
摘要： There are many inventions described herein as well as many aspects and embodiments of those inventions, for example, circuitry and techniques for reading, writing and/or operating a semiconductor memory cells of a memory cell array, including electrically floating body transistors in which an electrical charge is stored in the body of the transistor. In one aspect, the present inventions are directed to one or more independently controllable parameters of a memory operation (for example, restore, write, refresh), to program or write a data state into a memory cell. In one embodiment, the parameter is the amount of time of programming or writing a predetermined data state into a memory cell. In another embodiment, the controllable parameter is the amplitude of the voltage of the control signals applied to the gate, drain region and/or source region during programming or writing a predetermined data state into a memory cell. Indeed, the controllable parameters may be both temporal and voltage amplitude. Notably, the memory cell array may comprise a portion of an integrated circuit device, for example, logic device (for example, a microprocessor) or a portion of a memory device (for example, a discrete memory).
摘要翻译：这里描述的许多发明以及这些发明的许多方面和实施例，例如用于读取，写入和/或操作存储单元阵列的半导体存储器单元的电路和技术，包括电浮动体晶体管，其中电气电荷存储在晶体管的体内。在一个方面，本发明涉及存储器操作（例如，恢复，写入，刷新）的一个或多个可独立控制的参数，以将数据状态编程或写入存储器单元。在一个实施例中，参数是将预定数据状态编程或写入存储单元的时间量。在另一个实施例中，可控参数是在将预定数据状态编程或写入存储单元期间施加到栅极，漏极区域和/或源极区域的控制信号的电压的幅度。实际上，可控参数可以是时间和电压振幅。值得注意的是，存储单元阵列可以包括集成电路器件的一部分，例如逻辑器件（例如，微处理器）或存储器件（例如，分立存储器）的一部分。

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