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    • 1. 发明申请
    • DISPLAY CELL, DISPLAY APPARATUS AND METHOD FOR MAKING SAME
    • 显示单元,显示装置及其制造方法
    • WO2011085675A8
    • 2011-09-29
    • PCT/CN2011070177
    • 2011-01-11
    • DELTA ELECTRONICS INCCHEN JAU-SHIULIANG RONG-CHANGTSAI MING-WEI
    • CHEN JAU-SHIULIANG RONG-CHANGTSAI MING-WEI
    • G02F1/167
    • G02F1/167G02F2201/07G02F2202/10
    • An electrophoretic display device comprises a plurality of pixels, each pixel has a cell area containing a plurality of charged pigment particles (43) dispersed between two opposite electrodes (411, 421), and a semiconducting passivation layer (45) is provided on one or both of the two opposite electrodes (411, 421). The semiconducting passivation layer can be made of MOx/y, MSx/y, or MNx/y where M is a metal or semiconductor such as Al, Sn, Zn, Si, Ge, Ni, Ti, or Cd; x is a positive integer; and y is independently a non-zero positive integer. The semiconducting passivation layer may have a doped Si, ZnOx/y, ZnSx/y, CdSx/y and TiOx/y or a III-V type semiconducting material. The semiconducting passivation layer can be doped with a dopant which can be an n-type donor or a p-type acceptor, the n-type donor is N, P, As or F; and the p-type acceptor is B, Al, Ga, In, Be, Mg or Ca.
    • 电泳显示装置包括多个像素,每个像素具有包含分散在两个相对电极(411,421)之间的多个带电颜料粒子(43)的单元区域,并且半导体钝化层(45)设置在一个或两个相对电极 两个相对电极(411,421)两者。 半导体钝化层可由MOx / y,MSx / y或MNx / y制成,其中M是金属或半导体,例如Al,Sn,Zn,Si,Ge,Ni,Ti或Cd; x是正整数; y独立地为非零正整数。 半导体钝化层可具有掺杂的Si,ZnOx / y,ZnSx / y,CdSx / y和TiOx / y或III-V型半导体材料。 半导体钝化层可以掺杂有可以是n型施主或p型受主的掺杂剂,n型施主是N,P,As或F; 并且p型受体是B,Al,Ga,In,Be,Mg或Ca.
    • 2. 发明申请
    • DISPLAY CELL, DISPLAY APPARATUS AND METHOD FOR MAKING SAME
    • 显示单元,显示装置及其制造方法
    • WO2011085675A1
    • 2011-07-21
    • PCT/CN2011/070177
    • 2011-01-11
    • DELTA ELECTRONICS, INC.CHEN, Jau-ShiuLIANG, Rong-ChangTSAI, Ming-Wei
    • CHEN, Jau-ShiuLIANG, Rong-ChangTSAI, Ming-Wei
    • G02F1/167
    • G02F1/167G02F2201/07G02F2202/10
    • An electrophoretic display device comprises a plurality of pixels, each pixel has a cell area containing a plurality of charged pigment particles (43) dispersed between two opposite electrodes (411, 421), and a semiconducting passivation layer (45) is provided on one or both of the two opposite electrodes (411, 421). The semiconducting passivation layer can be made of MOx/y, MSx/y, or MNx/y where M is a metal or semiconductor such as Al, Sn, Zn, Si, Ge, Ni, Ti, or Cd; x is a positive integer; and y is independently a non-zero positive integer. The semiconducting passivation layer may have a doped Si, ZnOx/y, ZnSx/y, CdSx/y and TiOx/y or a III-V type semiconducting material. The semiconducting passivation layer can be doped with a dopant which can be an n-type donor or a p-type acceptor, the n-type donor is N, P, As or F; and the p-type acceptor is B, Al, Ga, In, Be, Mg or Ca.
    • 电泳显示装置包括多个像素,每个像素具有包含分散在两个相对电极(411,421)之间的多个带电颜料颗粒(43)的单元区域,并且半导体钝化层(45)设置在一个或 两个相对电极(411,421)中的两个。 半导体钝化层可由MOx / y,MSx / y或MNx / y制成,其中M为金属或半导体,例如Al,Sn,Zn,Si,Ge,Ni,Ti或Cd; x是正整数; y独立地为非零正整数。 半导体钝化层可以具有掺杂的Si,ZnO x / y,ZnS x / y,CdS x / y和TiO x / y或III-V型半导体材料。 半导体钝化层可以掺杂有可以是n型供体或p型受体的掺杂剂,n型供体是N,P,As或F; 并且p型受体是B,Al,Ga,In,Be,Mg或Ca。