专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2002093616A1 HOLLOW ANODE PLASMA REACTOR AND METHOD 审中-公开
标题翻译：中空阳极等离子体反应器和方法
公开(公告)号：WO2002093616A1
公开(公告)日：2002-11-21
申请号：PCT/US2002/015427
申请日：2002-05-14
申请人： LAM RESEARCH CORPORATION , BENZING, David, W. , KADKHODAYAN, Babak
发明人： BENZING, David, W. , KADKHODAYAN, Babak
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32623
摘要： The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.
摘要翻译：等离子体处理装置包括等离子体室，第一电极，第二电极和等离子体容纳装置。等离子体容纳装置具有多个狭槽并且电耦合到第一电极。容纳装置被配置为将等离子体限制在电极间体积内，同时促进最大工艺气体流量。当通过施加电场来处理电极间体积内的气体而产生等离子体时，容纳装置将等离子体电气限制在电极间的体积上，而不会明显地限制气体从电极间的体积流动。

2. 发明申请

WO0229848A3 WAFER AREA PRESSURE CONTROL FOR PLASMA CONFINEMENT 审中-公开
标题翻译： WAFER区域压力控制等离子体约束
公开(公告)号：WO0229848A3
公开(公告)日：2002-10-31
申请号：PCT/US0142332
申请日：2001-09-26
申请人： LAM REASEARCH CORP , TAEJOON HAN , BENZING DAVID W , ELLINGBOE ALBERT R
发明人： TAEJOON HAN , BENZING DAVID W , ELLINGBOE ALBERT R
IPC分类号： H05H1/46 , B01J3/00 , B01J3/02 , B01J19/08 , C23F4/00 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32449 , H01J37/32623
摘要： A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100 %. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.
摘要翻译：提供等离子体处理室，其提供改进的晶片面积压力控制。等离子体处理室是具有连接用于产生和维持等离子体的装置的真空室。该设备的一部分将是蚀刻剂气体源和排气口。限制环定义了晶圆上方的区域。晶圆面积压力取决于限制环上的压降。限制环是晶片区域压力控制装置的一部分，其提供晶片区域压力控制范围大于100％。这样的晶片面积压力控制装置可以是三个可调限制环和可用于提供所需晶片面积压力控制的保持器上的限制块。

3. 发明申请

WO1986006687A1 IN-SITU CVD CHAMBER CLEANER 审中-公开
公开(公告)号：WO1986006687A1
公开(公告)日：1986-11-20
申请号：PCT/US1985002167
申请日：1985-11-04
申请人： BENZING, David, W. , BENZING, Jeffrey, C. , BOREN, Arthur, D. , TANG, Ching, C.
IPC分类号： B44C01/22
CPC分类号： H01J37/32862 , B08B7/00 , C03C15/00 , C23C16/4405 , C30B25/08 , Y10S134/902 , Y10S156/913
摘要： An electrode structure (12) for inserting into an LPCVD tube (32) or RPE bell jar (42) to effect cleaning of deposited material from the inner wall (33) or (43) thereof. A base plate (22) of said structure has an O-ring seal (23) which matingly engages a base (34) of the tube or base (44) of the bell jar (42), such that a vacuum seal is created upon evacuation of the same utilizing a vacuum pump system (50). A pressure detector (24) in the form of a capacitance manometer is utilized to mesure the pressure within such tube or jar, and a gas flow control device (26) in the form of a mass flow controller is utilized to control the flow rate of etching gas. Gas is uniformly distributed in the tube or bell jar by a gas distribution tube (13).
摘要翻译：一种用于插入LPCVD管（32）或RPE钟罩（42）中以从其内壁（33）或（43）清除沉积材料的电极结构（12）。所述结构的基板（22）具有O形环密封件（23），其配合地接合钟罩（42）的管子或底座（44）的基部（34），使得真空密封件使用真空泵系统（50）将其排出。使用电容式压力计形式的压力检测器（24）来测量这种管或罐内的压力，并且使用质量流量控制器形式的气体流量控制装置（26）来控制流量蚀刻气体。气体通过气体分配管（13）均匀分布在管或钟罩中。

4. 发明申请

WO1986003886A1 TRIODE PLASMA REACTOR WITH MAGNETIC ENHANCEMENT 审中-公开
标题翻译：具有磁性增强的三极管等离子体反应器
公开(公告)号：WO1986003886A1
公开(公告)日：1986-07-03
申请号：PCT/US1985002121
申请日：1985-10-28
申请人： BENZING, David, W.
IPC分类号： H01L21/306
CPC分类号： H01J37/32623 , H01J37/32082 , H01J37/32165 , H01J37/32587 , H01J37/3266 , H01L21/32137
摘要： A triode apparatus (10) with magnetic enhancement for dry processing semiconductor wafers (42) and the like. A conductive substantially cylindrical chamber (12) contains a cathode (24) that is connected to a first source of AC power (76). A wafer stage (20) mounted on the inside of the chamber wall is connected to a second source of AC power (72). The chamber has means for connection to a reference voltage potential. Means (100) for generating a magnetic field perpendicular to the electric field generated between the chamber walls and the cathode is also provided.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式