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1. 发明申请

WO2011095473A1 LAYER TRANSFER USING BORON-DOPED SIGE LAYER 审中-公开
标题翻译：使用BORON-DOPED SIGE层的层转移
公开(公告)号：WO2011095473A1
公开(公告)日：2011-08-11
申请号：PCT/EP2011/051372
申请日：2011-02-01
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , BEDELL, Stephen , KIM, Jee, Hwan , INNS, Daniel , SADANA, Devendra , FOGEL, Keith , VICHICONTI, James
发明人： BEDELL, Stephen , KIM, Jee, Hwan , INNS, Daniel , SADANA, Devendra , FOGEL, Keith , VICHICONTI, James
IPC分类号： H01L21/18
CPC分类号： H01L21/187
摘要： A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an alternate substrate; and propagating a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate. A system for layer transfer using a boron-doped silicon germanium (SiGe) layer includes a bulk silicon substrate; a boron-doped Si Ge layer formed on the bulk silicon substrate, such that the boron-doped SiGe layer is located underneath an upper silicon (Si) layer, wherein the boron- doped SiGe layer is configured to propagate a fracture at an interface between the boron- doped SiGe layer and the bulk silicon substrate after hydrogenation of the boron-doped SiGe layer; and an alternate substrate bonded to the upper Si layer.
摘要翻译：使用硼掺杂硅锗（SiGe）层进行层转移的方法包括在体硅衬底上形成硼掺杂的SiGe层; 在掺杂硼的SiGe层上形成上硅（Si）层; 氢化硼掺杂的SiGe层; 将上部Si层结合到替代的基底上; 并在硼掺杂的SiGe层和体硅衬底之间的界面处传播断裂。使用硼掺杂硅锗（SiGe）层的层转移系统包括体硅衬底; 形成在本体硅衬底上的硼掺杂Si Ge层，使得掺杂硼的SiGe层位于上硅（Si）层下方，其中掺硼的SiGe层被构造成在硼掺杂SiGe层氢化后的硼掺杂SiGe层和体硅衬底; 以及与上部Si层接合的替代基板。

2. 发明申请

WO2009056478A3 STRAINED SEMICONDUCTOR-ON-INSULATOR BY SI:C COMBINED WITH POROUS PROCESS 审中-公开
公开(公告)号：WO2009056478A3
公开(公告)日：2009-05-07
申请号：PCT/EP2008/064272
申请日：2008-10-22
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , BEDELL, Stephen , DE SOUZA, Joel , REZNICEK, Alexander , SADANA, Devendra
发明人： BEDELL, Stephen , DE SOUZA, Joel , REZNICEK, Alexander , SADANA, Devendra
IPC分类号： H01L21/762
摘要： A method of fabricating a strained semiconductor-on- insulator (SSOI) substrate is provided. The method includes first providing a structure that includes a substrate, a doped and relaxed semiconductor layer on the substrate, and a strained semiconductor layer on the doped and relaxed semiconductor layer. In the invention, the doped and relaxed semiconductor layer having a lower lattice parameter than the substrate. Next, at least the doped and relaxed semiconductor layer is converted into a buried porous layer and the structure including the buried porous layer is annealed to provide a strained semiconductor-on-insulator substrate. During the annealing, the buried porous layer is converted into a buried oxide layer.

3. 发明申请

WO2006003061A1 STRAINED SILICON-ON-INSULATOR BY ANODIZATION OF A BURIED p+ SILICON GERMANIUM LAYER 审中-公开
标题翻译：通过阳极氧化P +硅锗层的分级制备的绝缘硅绝缘体
公开(公告)号：WO2006003061A1
公开(公告)日：2006-01-12
申请号：PCT/EP2005/052424
申请日：2005-05-27
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , Compagnie IBM France , ADAM, Thomas, N , BEDELL, Stephen, W. , DE SOUZA, Joel, P. , FOGEL, Keith, E. , REZNICEK, Alexander , SADANA, Devendra, K. , SHAHIDI, Ghavam
发明人： ADAM, Thomas, N , BEDELL, Stephen, W. , DE SOUZA, Joel, P. , FOGEL, Keith, E. , REZNICEK, Alexander , SADANA, Devendra, K. , SHAHIDI, Ghavam
IPC分类号： H01L21/762
CPC分类号： H01L21/76259 , Y10S438/967
摘要： A cost efficient and manufacturable method of fabricating strained semiconductor-on-insulator (SSOI) substrates is provided that avoids wafer bonding. The method includes growing various epitaxial semiconductor layers on a substrate, wherein at least one of the semiconductor layers is a doped and relaxed semiconductor layer underneath a strained semiconductor layer; converting the doped and relaxed semiconductor layer into a porous semiconductor via an electrolytic anodization process, and oxidizing to convert the porous semiconductor layer into a buried oxide layer. The method provides a SSOI substrate that includes a relaxed semiconductor layer on a substrate; a high-quality buried oxide layer on the relaxed semiconductor layer; and a strained semiconductor layer on the high-quality buried oxide layer. In accordance with the present invention, the relaxed semiconductor layer and the strained semiconductor layer have identical crystallographic orientations.
摘要翻译：提供了制造应变半导体绝缘体（SSOI）衬底的成本有效和可制造的方法，其避免晶片接合。该方法包括在衬底上生长各种外延半导体层，其中半导体层中的至少一个是在应变半导体层下面的掺杂和弛豫半导体层; 通过电解阳极氧化处理将掺杂和松弛的半导体层转化成多孔半导体，并氧化以将多孔半导体层转化为掩埋氧化物层。该方法提供了在衬底上包括松弛半导体层的SSOI衬底; 在松弛的半导体层上形成高质量的掩埋氧化物层; 以及在高质量掩埋氧化物层上的应变半导体层。根据本发明，松弛半导体层和应变半导体层具有相同的晶体取向。

4. 发明申请

WO2005031810A3 FORMATION OF A SILICON GERMANIUM-ON-INSULATOR STRUCTURE BY OXIDATION OF A BURIED POROUS SILICON LAYER 审中-公开
标题翻译：通过氧化多孔硅层形成硅绝缘体结构
公开(公告)号：WO2005031810A3
公开(公告)日：2005-06-23
申请号：PCT/US2004029378
申请日：2004-09-10
申请人： IBM , BEDELL STEPHEN W , CHOE KWANG SU , FOGEL KEITH F , SADANA DEVENDRA K
发明人： BEDELL STEPHEN W , CHOE KWANG SU , FOGEL KEITH F , SADANA DEVENDRA K
IPC分类号： C22F1/10 , H01L21/20 , H01L21/762
CPC分类号： H01L21/76227 , C22F1/10 , H01L21/02378 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02667 , H01L21/76245 , H01L29/78603
摘要： A simple and direct method of forming a SiGe-on-insulator that relies on the oxidation of a porous silicon layer (or region) that is created beneath a Ge-containing layer is provided. The method includes the steps of providing a structure comprising a Si-containing substrate having a hole-rich region formed therein and a Ge-containing layer atop the Si-containing substrate; converting the hole-rich region into a porous region; and annealing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.
摘要翻译：提供一种形成依赖于在含Ge层下形成的多孔硅层（或区域）的氧化的绝缘体上硅的简单且直接的方法。该方法包括以下步骤：提供包括其中形成有富空穴的含Si衬底和含Si衬底顶部的含Ge层的结构; 将富含孔的区域转化为多孔区域; 并退火包括多孔区域的结构，以提供基本上松弛的绝缘体上的SiGe。

5. 发明申请

WO2005055290A2 METHOD OF FABRICATING A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：制造半导体基板的方法
公开(公告)号：WO2005055290A2
公开(公告)日：2005-06-16
申请号：PCT/EP2004/053204
申请日：2004-12-01
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , BEDELL, Stephen , COHEN, Guy , CHEN, Huajie
发明人： BEDELL, Stephen , COHEN, Guy , CHEN, Huajie
IPC分类号： H01L21/00
CPC分类号： H01L21/324
摘要： A method of fabricating a strained semiconductor-on-insulator (SSOI) substrate in which the strained semiconductor is a thin semiconductor layer having a thickness of less than 50 nm that is located directly atop an insulator layer of a preformed silicon-on-insulator substrate is provided. Wafer bonding is not employed in forming the SSOI substrate of the present invention.
摘要翻译：一种制造应变半导体绝缘体（SSOI）衬底的方法，其中应变半导体是厚度小于50nm的薄半导体层，其直接位于预成型的绝缘体上硅衬底上的绝缘体层的顶部被提供。在形成本发明的SSOI基板时不使用晶片接合。

6. 发明申请

WO2005031810A2 FORMULATION OF A SILICON GERMANIUM-ON INSULATOR STRUCTURE BY OXIDATION OF A BURIED POROUS SILICON LAYER 审中-公开
标题翻译：通过氧化多孔硅层制备硅锗绝缘体结构
公开(公告)号：WO2005031810A2
公开(公告)日：2005-04-07
申请号：PCT/US2004/029378
申请日：2004-09-10
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , BEDELL, Stephen, W. , CHOE, Kwang, Su , FOGEL, Keith, F. , SADANA, Devendra, K.
发明人： BEDELL, Stephen, W. , CHOE, Kwang, Su , FOGEL, Keith, F. , SADANA, Devendra, K.
IPC分类号： H01L21/00
CPC分类号： H01L21/76227 , C22F1/10 , H01L21/02378 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02667 , H01L21/76245 , H01L29/78603
摘要： A simple and direct method of forming a SiGe-on-insulator that relies on the oxidation of a porous silicon layer (or region) that is created beneath a Ge-containing layer is provided. The method includes the steps of providing a structure comprising a Si-containing substrate having a hole-rich region formed therein and a Ge-containing layer atop the Si-containing substrate; converting the hole-rich region into a porous region; and annealing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.
摘要翻译：提供一种形成依赖于在含Ge层下形成的多孔硅层（或区域）的氧化的绝缘体上硅的简单且直接的方法。该方法包括以下步骤：提供包括其中形成有富空穴的含Si衬底和含Si衬底顶部的含Ge层的结构; 将富含孔的区域转化为多孔区域; 并退火包括多孔区域的结构，以提供基本上松弛的绝缘体上的SiGe。

7. 发明申请

WO2006017640A1 METHOD OF FORMING STRAINED SILICON MATERIALS WITH IMPROVED THERMAL CONDUCTIVITY 审中-公开
标题翻译：形成具有改善的导热性的应变硅材料的方法
公开(公告)号：WO2006017640A1
公开(公告)日：2006-02-16
申请号：PCT/US2005/027691
申请日：2005-08-04
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , BEDELL, Stephen, W. , CHEN, Huajie , FOGEL, Keith , MITCHELL, Ryan, M. , SADANA, Devendra, K.
发明人： BEDELL, Stephen, W. , CHEN, Huajie , FOGEL, Keith , MITCHELL, Ryan, M. , SADANA, Devendra, K.
IPC分类号： H01L21/36
CPC分类号： H01L29/1054 , H01L21/02381 , H01L21/0245 , H01L21/02507 , H01L21/02532
摘要： A method is disclosed for forming a strained Si layer on SiGe, where the SiGe layer has improved thermal conductivity. A first layer (41) of Si or Ge is deposited on a substrate (10) in a first depositing step; a second layer (42) of the other element is deposited on the first layer in a second depositing step; and the first and second depositing steps are repeated so as to form a combined SiGe layer (50) having a plurality of Si layers and a plurality of Ge layers (41-44). The respective thicknesses of the Si layers and Ge layers are in accordance with a desired composition ratio of the combined SiGe layer. The combined SiGe layer (50) is characterized as a digital alloy of Si and Ge having a thermal conductivity greater than that of a random alloy of Si and Ge. This method may further include the step of depositing a Si layer (61) on the combined SiGe layer (50); the combined SiGe layer is characterized as a relaxed SiGe layer, and the Si layer (61) is a strained Si layer. For still greater thermal conductivity in the SiGe layer, the first layer and second layer may be deposited so that each layer consists essentially of a single isotope.
摘要翻译：公开了一种在SiGe上形成应变Si层的方法，其中SiGe层具有改善的导热性。在第一沉积步骤中，在衬底（10）上沉积Si或Ge的第一层（41）另一元件的第二层（42）在第二沉积步骤中沉积在第一层上; 并且重复第一和第二沉积步骤以形成具有多个Si层和多个Ge层（41-44）的组合SiGe层（50）。 Si层和Ge层的各自的厚度根据组合的SiGe层的期望组成比。组合的SiGe层（50）的特征在于具有大于Si和Ge的随机合金的热导率的Si和Ge的数字合金。该方法还可以包括在组合SiGe层（50）上沉积Si层（61）的步骤。组合的SiGe层被表征为弛豫的SiGe层，并且Si层（61）是应变Si层。对于SiGe层中的更高的热导率，可以沉积第一层和第二层，使得每层基本上由单一同位素组成。

8. 发明申请

WO2004109776A3 SiGe LATTICE ENGINEERING USING A COMBINATION OF OXIDATION THINNING AND EPITAXIAL REGROWTH 审中-公开
标题翻译：使用氧化稀释和外延注射的组合的SiGe LATTICE ENGINEERING
公开(公告)号：WO2004109776A3
公开(公告)日：2005-05-19
申请号：PCT/US2004016903
申请日：2004-05-28
申请人： IBM , BEDELL STEPHEN W , CHEN HUAJIE , FOGEL KEITH E , SADANA DEVENDRA K
发明人： BEDELL STEPHEN W , CHEN HUAJIE , FOGEL KEITH E , SADANA DEVENDRA K
IPC分类号： H01L21/20 , H01L21/762 , H01L21/306
CPC分类号： H01L21/7624 , H01L21/02381 , H01L21/02532 , H01L21/02664 , Y10T428/12674
摘要： The present invention provides a method of fabricating a SiGe-on-insulator substrate in which lattice engineering is employed to decouple the interdependence between SiGe thickness, Ge fraction and strain relaxation. The method includes providing a SiGe-on-insulator substrate material comprising a SiGe alloy layer having a selected in-plane lattice parameter, a selected thickness parameter and a selected Ge content parameter, wherein the selected in-plane lattice parameter has a constant value and one or both of the other parameters, i.e., thickness or Ge content, have adjustable values; and adjusting one or both of the other parameters to final selected values, while maintaining the selected in-plane lattice parameter. The adjusting is achieved utilizing either a thinning process or a thermal dilution process depending on which parameters are fixed and which are adjustable.
摘要翻译：本发明提供了一种制造绝缘体上硅衬底的方法，其中使用晶格工程来去耦合SiGe厚度，Ge分数和应变松弛之间的相互依赖性。该方法包括提供一种绝缘体上硅衬底材料，其包括具有选定的面内晶格参数的SiGe合金层，选定的厚度参数和所选择的Ge含量参数，其中所选择的面内晶格参数具有恒定值，一个或两个其他参数，即厚度或Ge含量，具有可调整的值; 并且在保持所选择的平面内晶格参数的同时将其他参数中的一个或两个调整为最终选择的值。根据哪些参数是固定的，哪些是可调节的，利用稀化过程或热稀释过程实现调节。

9. 发明申请

WO2012135162A1 PROCESSES FOR REDUCING NITROSAMINE FORMATION DURING GAS PURIFICATION IN AMINE BASED LIQUID ABSORPTION SYSTEMS 审中-公开
标题翻译：基于氨基液体吸收系统的气体净化期间减少硝基胺形成的方法
公开(公告)号：WO2012135162A1
公开(公告)日：2012-10-04
申请号：PCT/US2012/030648
申请日：2012-03-27
申请人： ALSTOM TECHNOLOGY LTD , BEDELL, Stephen A.
发明人： BEDELL, Stephen A.
IPC分类号： B01D53/14
CPC分类号： B01D53/62 , B01D53/1475 , B01D53/1493 , B01D2252/2041 , B01D2252/20415 , B01D2252/20426 , B01D2252/20431 , B01D2252/20447 , B01D2252/20489 , B01D2257/504 , B01D2258/0283 , Y02A50/2342 , Y02C10/04 , Y02C10/06
摘要： Acid gas purification processes for reducing nitrosamine precursor formation from a gas stream containing NOx, wherein the acid gas is selectively absorbed in an amine based wash solution comprising at least one secondary diamine. The processes generally include absorbing carbon dioxide from the gas stream containing NOx species with the amine-based wash solution comprising at least one secondary diamine to provide a carbon dioxide lean gas stream that is released into the surroundings, wherein absorbing the acid gas forms a rich amine solution; and regenerating the rich amine solution at an elevated temperature to release the carbon dioxide to form a regenerated lean amine solution, wherein absorbing and regenerating are configured to promote formation of carbamate species of at least one diamine.
摘要翻译：用于从含有NO x的气流中还原亚硝胺前体形成的酸性气体净化方法，其中所述酸性气体被选择性地吸收到包含至少一种仲胺的基于胺的洗涤溶液中。该方法通常包括从含有NO x物质的气流中吸收二氧化碳，其中胺基洗涤溶液包含至少一种仲二胺以提供释放到周围环境中的贫二氧化碳气流，其中吸收酸性气体形成富胺溶液; 以及在升高的温度下再生所述富胺溶液以释放二氧化碳以形成再生的贫胺溶液，其中吸收和再生被配置为促进形成至少一种二胺的氨基甲酸酯物质。

10. 发明申请

WO2012129001A1 A METHOD FOR THE REMOVAL OF HEAT STABLE AMINE SALTS FROM AN AMINE ABSORBENT 审中-公开
标题翻译：从胺吸收剂中去除热稳定的胺盐的方法
公开(公告)号：WO2012129001A1
公开(公告)日：2012-09-27
申请号：PCT/US2012/028889
申请日：2012-03-13
申请人： ALSTOM TECHNOLOGY LTD , DOW GLOBAL TECHNOLOGIES LLC , HANDAGAMA, Nareshkumar B. , BABURAO, Barath , VITSE, Frederic , BEDELL, Stephen A. , LEISTER, Johnathan W. , DUGAS, Ross
发明人： HANDAGAMA, Nareshkumar B. , BABURAO, Barath , BEDELL, Stephen A. , LEISTER, Johnathan W. , DUGAS, Ross
IPC分类号： B01D53/14 , B01D61/42 , C07C209/84
CPC分类号： B01D61/422 , B01D53/1425 , B01D53/1475 , B01D53/1493 , B01D61/42 , B01D2252/204 , B01D2252/20484 , B01D2252/20489 , B01D2257/504 , B01D2258/0283 , B01D2259/4009 , B01J47/00 , C07C209/84 , Y02A50/2342 , Y02C10/04 , Y02C10/06 , Y02C10/08
摘要： A method and a system for the removal of heat stable amine salts from an amine absorbent used in a carbon dioxide (CO 2 ) capture process, the method comprising: withdrawing amine absorbent containing heat stable amine salts from the CO 2 capture process; subjecting the withdrawn amine absorbent containing heat stable amine salts to a residual CO 2 removal step (117); subjecting the amine absorbent (120) from the residual CO 2 removal step to a separation step (116) to separate heat stable amine salts (124) from the amine absorbent; and returning the amine absorbent (122) having a reduced concentration of heat stable amine salts to the CO 2 capture process.
摘要翻译：一种用于从用于二氧化碳（CO 2）捕获方法的胺吸收剂中除去热稳定的胺盐的方法和系统，所述方法包括：从CO 2捕获方法中提取含有热稳定胺盐的胺吸收剂; 将含有热稳定胺盐的取出的胺吸收剂经历残留的CO 2去除步骤（117）; 将来自残余CO 2去除步骤的胺吸收剂（120）经受分离步骤（116）以从胺吸收剂中分离出热稳定的胺盐（124）; 并将具有降低的热稳定胺盐浓度的胺吸收剂（122）返回到CO 2捕获方法中。

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