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1. 发明申请

WO2023083383A1 POWER AMPLIFIER 审中-公开
公开(公告)号：WO2023083383A1
公开(公告)日：2023-05-19
申请号：PCT/CN2022/132075
申请日：2022-11-15
申请人： AMPLEON NETHERLANDS B.V. , AMPLEON SEMICONDUCTORS (SHANGHAI) CO. LTD
发明人： JIANG, Xiaochuan , XIA, Yan , ZHANG, Binghui
IPC分类号： H03F1/02 , H03F1/56 , H03F3/193 , H03F3/21 , H03F3/60 , H03F3/217
摘要： The present invention relates to a power amplifier. The present invention particularly relates to switched-mode power amplifiers operable in a frequency range between 0.5GHz and 40GHz, and configured for outputting powers ranging from 1W to 1kW. The present invention further relates to an impedance matching stage to be used in such power amplifier. The impedance matching stage of the present invention comprises a short-circuited stub at its input, an open-circuited stub at its output, and a series branch connecting the input and output. By choosing suitable characteristic impedances and electrical lengths of the stubs and the series branch it becomes possible to independently choose the impedance to be presented to the power transistor at the fundamental and second harmonic frequencies.

2. 发明申请

WO2016124707A2 DOHERTY AMPLIFIER 审中-公开
标题翻译： DOHERTY放大器
公开(公告)号：WO2016124707A2
公开(公告)日：2016-08-11
申请号：PCT/EP2016/052423
申请日：2016-02-04
申请人： AMPLEON NETHERLANDS B.V.
发明人： MORONVAL, Xavier, Bruno, Jean
IPC分类号： H03F1/02
CPC分类号： H03F1/0288 , H03F1/56 , H03F1/565 , H03F3/195 , H03F3/213 , H03F3/245 , H03F3/604 , H03F2200/387 , H03F2200/423 , H03F2200/451
摘要： A Doherty amplifier (100, 200) having a set of amplifiers (120, 122) comprising a main amplifier (120) and at least one peak amplifier (122), each amplifier of the set of amplifiers (120, 122) having an input and an output, the at least one peak amplifier (122) configured to become operational at a respective threshold power, the Doherty amplifier (100, 200) further comprising: a Doherty amplifier output node (126) coupled to the outputs of the set of amplifiers (120, 122) through an impedance network (108), the impedance network (108) comprising: impedance inverting elements (128) configured to match the impedance of the outputs of the set of amplifiers (120, 122) at the Doherty amplifier output node (126); and a matching system (132) coupled to the outputs of the set of amplifiers (120, 122), the matching system (132) configured to impedance match the modulated impedance output of the main amplifier (120) to the impedance of the peak amplifiers (122).
摘要翻译：具有包括主放大器（120）和至少一个峰值放大器（122）的一组放大器（120,122）的Doherty放大器（100,200），所述放大器组（120,122）中的每个放大器具有输入以及输出，所述至少一个峰值放大器（122）被配置为以相应的阈值功率运行，所述多赫蒂放大器（100,200）还包括：多赫蒂放大器输出节点（126），耦合到所述一组所述阻抗网络（108）包括：阻抗反转元件（128），被配置为匹配所述放大器组（120,122）的所述输出端的阻抗，所述放大器（120,122）的集合在所述Doherty放大器输出节点（126）; 以及耦合到所述放大器组（120,122）的输出的匹配系统（132），所述匹配系统（132）被配置为将所述主放大器（120）的调制阻抗输出阻抗匹配到所述峰值放大器（122）。

3. 发明申请

WO2022119437A1 ELECTRONIC PACKAGE AND DEVICE COMPRISING THE SAME 审中-公开
公开(公告)号：WO2022119437A1
公开(公告)日：2022-06-09
申请号：PCT/NL2021/050723
申请日：2021-11-30
申请人： AMPLEON NETHERLANDS B.V.
发明人： AL NUKARI, Atef , SOARES TEIXEIRA, Jorge Manuel
IPC分类号： H01L23/31 , H01L23/13 , H01L23/367 , H01L23/498 , H01L23/552 , H01L23/00
摘要： The present invention relates to an electronic package. The present invention particularly applies to radiofrequency, 'RF', packages. The present invention further relates to an electronic device comprising such a package. The electronic package according to the invention is configured to be arranged on a printed circuit board of an electronic device in an upside down manner. Instead of the package terminals being arranged on the printed circuit board, the package terminals in the electronic package of the present invention are arranged on the body of solidified molding compound. Connections to the package terminals are obtained using embedded bondwires.

4. 发明申请

WO2020256554A1 AMPLIFIER HAVING IMPROVED STABILITY 审中-公开
公开(公告)号：WO2020256554A1
公开(公告)日：2020-12-24
申请号：PCT/NL2020/050401
申请日：2020-06-19
申请人： AMPLEON NETHERLANDS B.V.
发明人： ZHU, Yi , VAN DER ZANDEN, Josephus Henricus Bartholomeus , HEERES, Rob Mathijs
IPC分类号： H01L23/66 , H03F1/02 , H03F1/56 , H03F3/24 , H03F3/193
摘要： The present application relates to an amplifier. It further relates to an amplifier comprising the same. The present application particularly relates to radio-frequency, 'RF', amplifiers. For example, the operational frequency of the amplifier may lie in a range between 100 MHz and 40 GHz. According to the invention, a two or more stage input matching network is used with a particular positioning of the bondwire attachment structures that are coupled to the non-ground terminals of the capacitors of this input matching network. Due to this arrangement, the impact of the electromagnetic coupling associated with these bondwire assemblies on the RF performance can be mitigated.

5. 发明申请

WO2019017779A3 RF POWER AMPLIFIER SYSTEM 审中-公开
公开(公告)号：WO2019017779A3
公开(公告)日：2019-01-24
申请号：PCT/NL2018/050494
申请日：2018-07-17
申请人： AMPLEON NETHERLANDS B.V.
发明人： VALK, Patrick
IPC分类号： H03G3/30 , H03F3/20 , H04W52/52
摘要： The present invention relates to a radio-frequency (RF) power amplifier system for amplifying an RF signal. The present invention further relates to a telecommunications base station and a solid state cooking apparatus comprising such an RF power amplifier system and to a method for amplifying an RF signal. The invention proposes to regulate the power outputted by the power amplifier as a function of a comparison between the actual large signal gain and a desired large signal gain.

6. 发明申请

WO2021107769A1 LEAD FRAME BASED MOLDED RADIO FREQUENCY PACKAGE 审中-公开
公开(公告)号：WO2021107769A1
公开(公告)日：2021-06-03
申请号：PCT/NL2019/050794
申请日：2019-11-29
申请人： AMPLEON NETHERLANDS B.V.
发明人： RABEN, Jurgen , ZHU, Yi
IPC分类号： H01L21/50 , H01L23/047 , H01L23/495 , H01L23/66 , H01L23/552
摘要： The present invention relates to a lead frame based molded radiofrequency package, and to a Doherty amplifier and electronic device comprising the same. According to the invention, the package comprises a frame part that physically connects to and extends from at least one part of a connecting member by which the substrate was connected to the lead frame prior to separating the lead frame from the package. According to the invention, a second electrical component is mounted and/or electrically connected to this frame part.

7. 发明申请

WO2020190137A1 ELECTRONIC MOLDED PACKAGE 审中-公开
公开(公告)号：WO2020190137A1
公开(公告)日：2020-09-24
申请号：PCT/NL2020/050180
申请日：2020-03-18
申请人： AMPLEON NETHERLANDS B.V.
发明人： MEEUWSEN, Frans , RABEN, Jurgen
IPC分类号： H01L23/047 , H01L23/10 , H01L23/495 , H01L23/00 , H01L23/66
摘要： The present invention relates to an electronic package, to an electronic device comprising such a package and to a lead frame for manufacturing the electronic package. The present invention particularly relates to electronic packages in which radiofrequency (RF) circuitry is arranged. According to the invention, a width of the clamping portion is substantially larger than the width of the lead end portion, the width of the clamping portion being chosen such that bending of the inner part and/or body part relative to the outer part during the application of the molding compound was substantially prevented thereby having avoided flash and/or bleed of molding compound onto the inner part.

8. 发明申请

WO2016180920A1 GUARD BOND WIRES IN AN INTEGRATED CIRCUIT PACKAGE 审中-公开
标题翻译：在一体化电路包中的GUARD BOND WIRES
公开(公告)号：WO2016180920A1
公开(公告)日：2016-11-17
申请号：PCT/EP2016/060667
申请日：2016-05-12
申请人： AMPLEON NETHERLANDS B.V.
发明人： CUOCO, Vittorio , VOLKHINE, Youri , ZHU, Yi , VAN DER ZANDEN, Josephus , WALESIENIUK, Anna
IPC分类号： H03H7/38 , H01L23/495 , H01L23/498 , H01L23/66
CPC分类号： H03H7/383 , H01L23/047 , H01L23/66 , H01L2224/48091 , H01L2224/48137 , H01L2224/49175 , H01L2924/19107 , H01L2924/00014
摘要： An integrated circuit package is provided. The integrated circuit package comprises a first guard bond wire (410) and second guard bond wire (420). The first guard bond wire (410) has a first end (411) coupled to ground and a second end (412) coupled to ground. The second guard bond wire (420) has a first end (421) coupled to ground and a second end (422) coupled to ground. The integrated circuit package further comprises a die (101). The die (101) is mounted between the first and second guard bond wires such that the first and second guard bond wires distort a magnetic field between at least an input terminal and an output terminal of the die to provide impedance matching.
摘要翻译：提供集成电路封装。集成电路封装包括第一保护接合线（410）和第二保护接合线（420）。第一保护接合线（410）具有耦合到地的第一端（411）和耦合到地的第二端（412）。第二保护接合线（420）具有耦合到地的第一端（421）和耦合到地的第二端（422）。集成电路封装还包括管芯（101）。模具（101）安装在第一和第二保护接合线之间，使得第一和第二保护接合线在芯片的至少输入端子和输出端子之间扭曲磁场，以提供阻抗匹配。

9. 发明申请

WO2022271017A1 DOHERTY POWER AMPLIFIER 审中-公开
公开(公告)号：WO2022271017A1
公开(公告)日：2022-12-29
申请号：PCT/NL2022/050352
申请日：2022-06-21
申请人： AMPLEON NETHERLANDS B.V.
发明人： YANG, Yang , JIN, Jiandong , ZHANG, Binghui
IPC分类号： H03F1/02 , H03F3/195 , H03F1/56 , H03F3/213 , H03F1/0288 , H03F1/565 , H03F2200/222 , H03F2200/387 , H03F2200/451
摘要： The present invention relates to a Doherty power amplifier, and a Doherty power amplifier module configured to be mounted on a printed circuit board for forming such a Doherty power amplifier. According to the present invention, a series network of a shunt inductor and shunt DC decoupling capacitor is used to partially resonate out the output capacitance of the main transistor. In addition, a series inductor is connected in between the output of the main transistor and the combining node, and a shunt capacitive element is connected in between the combining node and ground. The part of the output capacitance that is not resonated out, the series inductor, and the shunt capacitive element form a lumped equivalent of a 90 degrees transmission line at the fundamental frequency.

10. 发明申请

WO2021086189A1 FIELD-EFFECT TRANSISTOR HAVING IMPROVED LAYOUT 审中-公开
公开(公告)号：WO2021086189A1
公开(公告)日：2021-05-06
申请号：PCT/NL2020/050675
申请日：2020-10-30
申请人： AMPLEON NETHERLANDS B.V.
发明人： VALK, Patrick
IPC分类号： H01L29/417 , H01L23/482
摘要： The present invention relates to a field-effect transistor, to a packaged field-effect transistor and to an electronic device comprising the same. More in particular, the present invention relates to a field-effect transistor having an improved layout of the gate and drain fingers. The invention proposes a new layout for the drain and gate fingers such that the phase delays between signals passing through a transistor cell at different positions along a gate or drain finger are minimized.

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