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    • 2. 发明申请
    • METAL CONTACT SCHEME FOR SOLAR CELLS
    • 太阳能电池金属接触方案
    • WO2012000015A1
    • 2012-01-05
    • PCT/AU2011/000586
    • 2011-05-17
    • NEWSOUTH INNOVATIONS PTY LIMITEDLENNON, Alison JoanLU, DorisCHEN, Yang
    • LENNON, Alison JoanLU, DorisCHEN, Yang
    • H01L21/44H01L21/28
    • H01L31/02021H01L31/022425H01L31/02363Y02E10/50
    • A method of forming point metal electrical contacts to a semiconductor surface of a semiconductor device is provided. In a first step a first metal layer is formed over the semiconductor surface. The first metal layer is then anodised to create a porous metal-oxide layer formed over the semiconductor surface. The pores in the porous metal-oxide layer will thus form an array of openings in the porous metal-oxide layer. A contact metal layer is then formed over the porous metal-oxide layer such that parts of the contact metal layer extend into openings of the array of openings. The contact metal layer electrically contacts the semiconductor surface through the array of openings in the porous metal-oxide layer. A dielectric layer may optionally be formed over the semiconductor surface and the porous metal-oxide layer the formed over the dielectric layer and the contact metal then contacts the semiconductor surface through the dielectric layer.
    • 提供了一种将半导体器件的半导体表面形成点金属电触点的方法。 在第一步骤中,在半导体表面上形成第一金属层。 然后阳极氧化第一金属层以产生形成在半导体表面上的多孔金属氧化物层。 因此,多孔金属氧化物层中的孔将在多孔金属氧化物层中形成开口阵列。 然后在多孔金属氧化物层上形成接触金属层,使得接触金属层的部分延伸到开口阵列的开口中。 接触金属层通过多孔金属氧化物层中的开口阵列与半导体表面电接触。 可以可选地在半导体表面上形成电介质层,并且在介电层上形成的多孔金属氧化物层,然后接触金属通过介电层接触半导体表面。
    • 3. 发明申请
    • QUERY PROCESSING
    • 查询处理
    • WO2011091472A8
    • 2011-08-04
    • PCT/AU2011/000084
    • 2011-01-27
    • NATIONAL ICT AUSTRALIA LIMITEDMANETH, SebastianNGUYEN, Kim
    • MANETH, SebastianNGUYEN, Kim
    • G06F17/30
    • A computer-implemented method for processing a query of a set of data, the method comprising: (a) determining whether compiled code is stored for a state of an automaton and a label associated with a node in the set of data, wherein the automaton is constructed based on the query and comprises one or more states, one or more labels, and one or more transitions each associated with a state and a label; and (b) if the determination is in the affirmative, executing the compiled code for the state and label to perform one or more transitions associated with the state and label; and (c) otherwise determining one or more transitions associated with the state and label, and compiling, storing and executing code to perform the determined one or more transitions.
    • 一种用于处理一组数据的查询的计算机实现的方法,所述方法包括:(a)确定是否存储针对自动机的状态和与节点中的节点相关联的标签的编译代码 所述数据集合,其中所述自动机是基于所述查询构建的并且包括一个或多个状态,一个或多个标签以及每个与状态和标签相关联的一个或多个转换; (b)如果确定结果为肯定,则执行状态和标签的编译代码以执行与状态和标签相关联的一个或多个转换; (c)另外确定与状态和标签相关联的一个或多个转换,以及编译,存储和执行代码以执行所确定的一个或多个转换。
    • 4. 发明申请
    • A SWITCHING GATES MIXER
    • 开关门混合器
    • WO2011069209A1
    • 2011-06-16
    • PCT/AU2010/001670
    • 2010-12-09
    • NATIONAL ICT AUSTRALIA LIMITEDSKAFIDAS, StanZHANG, Fan
    • SKAFIDAS, StanZHANG, Fan
    • H03D1/22H04B1/28H04B1/30
    • H04B1/30H03D7/1441H03D7/1458H03D7/1475H03D7/1483H03D7/165H04B1/0028
    • This invention concerns a sub-harmonic homodyne mixer suitable for operation at the millimetre waveband (MMW); for instance the 60 GHz RF radio band. The mixer comprises: A first pair of transistors connected together with common source and common drain, and having an input port across their gates to receive the in-phase voltage signal from a local oscillator. A second pair of transistors also connected together with common source and common drain, and having an input port across their gates to receive the quadrature voltage signal from the local oscillator. Wherein, an input voltage port is defined directly across the common sources of the first and second pairs of transistors, and an output voltage port is defined between the common drains of the first pair of transistors and the common drains of the second pair of transistors. According to another aspect the present invention is a transceiver comprising a mixer according to the first aspect.
    • 本发明涉及适用于在毫米波段(MMW)下操作的亚谐波零差混频器; 例如60GHz RF无线电频段。 混频器包括:第一对晶体管,其与公共源极和公共漏极连接在一起,并且在其栅极之间具有接收来自本地振荡器的同相电压信号的输入端口。 第二对晶体管也与公共源极和公共漏极连接在一起,并且在其栅极之间具有接收来自本地振荡器的正交电压信号的输入端口。 其中,输入电压端口被直接限定在第一和第二对晶体管的公共源上,并且输出电压端口被限定在第一对晶体管的公共漏极和第二对晶体管的公共漏极之间。 根据另一方面,本发明是一种收发机,包括根据第一方面的混合器。
    • 6. 发明申请
    • METHOD FOR TEXTURING SURFACES
    • 纹理表面方法
    • WO2011032218A1
    • 2011-03-24
    • PCT/AU2010/001208
    • 2010-09-16
    • NEWSOUTH INNOVATIONS PTY LIMITEDBRAZIL, IanLENNON, Alison Joan
    • BRAZIL, IanLENNON, Alison Joan
    • H01L21/311
    • C09K13/08C03C15/00H01L31/02366Y02E10/50
    • A method of texturing a surface of a selected material is provided. The method includes: a. applying a base etching component as a layer extending over the surface of the selected material; b. depositing a fluid etching component in a pattern of discrete deposition points over a predetermined area of the surface to be textured, such that the deposited fluid etching component spreads laterally after being deposited. The base etching component and the deposited fluid etching component combine to form an etching composition to etch the surface of the selected material in the areas where the deposited fluid etching component is deposited and spreads. This results in an etched pattern of texture on the surface of the selected material, which is a 2 dimensional spatial modulation of the pattern of discrete deposition points.
    • 提供了一种纹理化所选材料的表面的方法。 该方法包括:a。 施加基底蚀刻部件作为在所选材料的表面上延伸的层; 湾 将流体蚀刻部件沉积在要纹理化的表面的预定区域上的离散沉积点的图案中,使得沉积的流体蚀刻部件在沉积之后横向扩展。 基底蚀刻部件和沉积的流体蚀刻部件组合以形成蚀刻组合物,以在沉积的流体蚀刻部件沉积和扩展的区域中蚀刻所选择的材料的表面。 这导致所选材料的表面上的蚀刻纹理图案,其是离散沉积点的图案的二维空间调制。