会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明申请
    • METALLIZATION OF CONDUCTIVE WIRES FOR SOLAR CELLS
    • 太阳电池导电线的金属化
    • WO2018063889A1
    • 2018-04-05
    • PCT/US2017/052559
    • 2017-09-20
    • SUNPOWER CORPORATIONTOTAL MARKETING SERVICES
    • SEWELL, Richard HamiltonBARKHOUSE, David Aaron RandolphHARDER, Nils-Peter
    • H01L31/18H01L31/05H01L31/02
    • Methods of fabricating a solar cell, and system for electrically coupling solar cells, are described. In an example, the methods for fabricating a solar cell can include placing conductive wires in a wire guide, where conductive wires are placed over a first semiconductor substrate having first doped regions and second doped regions. The method can include aligning the conductive wires over the first and second doped regions, where the wire guide aligns the conductive wires substantially parallel to the first and second doped regions. The method can include bonding the conductive wires to the first and second doped regions. The bonding can include applying a mechanical force to the semiconductor substrate via a roller or bonding head of the wire guide, where the wire guide inhibits lateral movement of the conductive wires during the bonding.
    • 描述了制造太阳能电池的方法和用于电耦合太阳能电池的系统。 在一个示例中,用于制造太阳能电池的方法可以包括将导电线放置在导线引导件中,其中导电线被放置在具有第一掺杂区域和第二掺杂区域的第一半导体衬底上。 该方法可以包括在第一掺杂区域和第二掺杂区域上方对齐导线,其中导线将导线基本上平行于第一掺杂区域和第二掺杂区域对齐。 该方法可以包括将导线接合到第一和第二掺杂区域。 结合可以包括经由导线器的辊或结合头向半导体衬底施加机械力,其中导线阻止导线在结合期间的横向移动。
    • 10. 发明申请
    • METALLIZATION OF SOLAR CELLS WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES
    • 具有不同P型和N型区域结构的太阳能电池的金属化
    • WO2017173385A1
    • 2017-10-05
    • PCT/US2017/025574
    • 2017-03-31
    • SUNPOWER CORPORATION
    • SMITH, David D.WEIDMAN, TimothyHARRINGTON, ScottBALU, Venkatasubramani
    • H01L31/18H01L31/028H01L31/0216H01L31/0236H01L31/0224
    • Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.
    • 描述了制造具有差异化的P型和N型区域架构的太阳能电池发射极区域的方法,以及所得到的太阳能电池。 在一个示例中,背接触太阳能电池可以包括具有光接收表面和背表面的衬底。 第一导电类型的第一多晶硅发射极区域设置在设置在基板背面上的第一薄介电层上。 第二不同导电类型的第二多晶硅发射极区域设置在设置在衬底背面上的第二薄介电层上。 第三薄介电层设置在第一多晶硅发射极区的暴露的外部上,并且横向设置在第一和第二多晶硅发射极区之间。 第一导电接触结构设置在第一多晶硅发射区上。 第二导电接触结构设置在第二多晶硅发射区上。 还描述了金属化方法,包括用于形成第一和第二导电接触结构的蚀刻技术。