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1. 发明申请

WO2022208192A1 MAGNETIC SENSOR DEVICE HAVING AN IMPROVED MEASUREMENT RANGE 审中-公开
公开(公告)号：WO2022208192A1
公开(公告)日：2022-10-06
申请号：PCT/IB2022/052046
申请日：2022-03-08
申请人： CROCUS TECHNOLOGY SA
发明人： DOUNIA, Salim , BARADUC, Claire
IPC分类号： G01R33/09 , G01R33/00 , G01R33/0094 , G01R33/098 , G11C11/161
摘要： A magnetic sensor device comprising a plurality of magnetic sensor elements (10); each magnetic sensor element (10) comprising a magnetic tunnel junction (2) including a reference layer (23) having a reference magnetization (230), a sense layer (21) having a sense 5 magnetization (210) and a tunnel barrier layer (22); the sense magnetization (210) comprising a stable vortex configuration in the absence of an external magnetic field, the vortex having a core (211) reversibly movable in a plane (P) of the sense layer (21) according to an external magnetic field (60); the sense layer (21) comprising a peripheral 10 shape (214) in the plane (P), the peripheral shape (214) comprising an asymmetric edge portion (215); the magnetic sensor elements (10) being arranged such that the edge portion (215) of a magnetic sensor element (10) is opposite to the edge portion (215) of the adjacent magnetic sensor element (10).

2. 发明申请

WO2022058875A1 MAGNETORESISTIVE ELEMENT FOR A 2D MAGNETIC SENSOR HAVING A REDUCED HYSTERESIS RESPONSE 审中-公开
公开(公告)号：WO2022058875A1
公开(公告)日：2022-03-24
申请号：PCT/IB2021/058336
申请日：2021-09-14
申请人： CROCUS TECHNOLOGY SA
发明人： TIMOPHEEV, Andrey , STRELKOV, Nikita , CHILDRESS, Jeffrey
IPC分类号： G01R33/09 , G01R33/00
摘要： A magnetoresistive element (10) for a 2D magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) included between a reference layer (21) having a reference magnetization (210) and a sense layer (23) having a sense magnetization (230). The sense layer (23) comprises a sense synthetic antiferromagnetic (SAF) structure including a first sense sublayer (231) in contact with the tunnel barrier layer (22) and separated from a second sense sublayer (232) by a first non-magnetic spacer layer (233) such that the first sense sublayer (231) is antiferromagnetically coupled to the second sense sublayer (232). The sense layer (23) is configured such that a sense magnetic ratio (ΔM) defined as: Formula (I), wherein MSFM1 and MSFM2 are the spontaneous magnetizations of the first and second sense sublayers (231, 232) and tFM1 and tFM2 are the thicknesses of the first and second sense sublayers (231, 232); and wherein the sense magnetic ratio is between 0.1 and 0.25.

3. 发明申请

WO2021156714A1 MAGNETORESISTIVE SENSOR ELEMENT HAVING COMPENSATED TEMPERATURE COEFFICIENT OF SENSITIVITY AND METHOD FOR MANUFACTURING SAID ELEMENT 审中-公开
公开(公告)号：WO2021156714A1
公开(公告)日：2021-08-12
申请号：PCT/IB2021/050697
申请日：2021-01-29
申请人： CROCUS TECHNOLOGY SA
发明人： CUCHET, Léa , TIMOPHEEV, Andrey , CHILDRESS, Jeffrey
IPC分类号： G01R33/09 , G01R33/00
摘要： The present disclosure concerns a magnetoresistive sensor element (2) comprising: a reference layer (23) having a pinned reference magnetization (230); a sense layer (21) having a free sense magnetization (210) comprising a stable vortex configuration reversibly movable in accordance to an external magnetic field (60) to be measured; a tunnel barrier layer (22) between the reference layer (23) and the sense layer (21); wherein the sense layer (21) comprises a first ferromagnetic sense portion (211) in contact with the tunnel barrier layer (22) and a second ferromagnetic sense portion (212) in contact with the first ferromagnetic sense portion (211); the second ferromagnetic sense portion (212) comprising a dilution element in a proportion such that a temperature dependence of a magnetic susceptibility (x) of the sense layer (21) substantially compensates a temperature dependence of a tunnel magnetoresistance of the magnetoresistive sensor element. The present disclosure concerns a method for manufacturing the magnetoresistive sensor element.

4. 发明申请

WO2017153883A1 MAGNETORESISTIVE ELEMENT HAVING AN ADJUSTABLE MAGNETOSTRICTION AND MAGNETIC DEVICE COMPRISING THE MAGNETORESISTIVE ELEMENT 审中-公开
标题翻译：具有可调整的磁致伸缩的磁阻元件和包含磁阻元件的磁装置
公开(公告)号：WO2017153883A1
公开(公告)日：2017-09-14
申请号：PCT/IB2017/051282
申请日：2017-03-06
申请人： CROCUS TECHNOLOGY SA
IPC分类号： H01L43/08 , H01F10/26 , H01L43/12
摘要： The present disclosure concerns a magnetoresistive element (1) comprising: a storage layer (21) having a first storage magnetostriction; a sense layer (23) having a first sense magnetostriction; a barrier layer (22) between and in contact with the storage and sense layer (21, 23); wherein the magnetoresistive element (1) further comprises a compensating ferromagnetic layer (25) having a second magnetostriction different from the first storage magnetostriction and/or sense magnetostriction, and adapted to compensate the first storage magnetostriction and/or the first sense magnetostriction so that a net magnetostriction of the storage layer (21) and/or sense layer (23) is adjustable between -10 ppm et +10 ppm or more negative than -10 ppm by adjusting a thickness of the compensating ferromagnetic layer (25). The present disclosure concerns also concerns a magnetic device comprising the magnetoresistive element.
摘要翻译：本公开涉及磁阻元件（1），其包括：具有第一存储磁致伸缩的存储层（21）感测层（23），其具有第一感测磁致伸缩; 在存储和感测层（21,23）之间并与其接触的阻挡层（22）; 其中所述磁阻元件（1）还包括补偿铁磁层（25），所述补偿铁磁层具有与所述第一存储磁致伸缩和/或传感磁致伸缩不同的第二磁致伸缩，并且适于补偿所述第一存储磁致伸缩和/或所述第一传感磁致伸缩，通过调节补偿铁磁层（25）的厚度，存储层（21）和/或感测层（23）的净磁致伸缩可以在-10ppm等于+ 10ppm或者比-10ppm更负。本公开还涉及包括磁阻元件的磁性器件。

5. 发明申请

WO2016113619A1 MAGNETIC LOGIC UNIT (MLU) CELL FOR SENSING MAGNETIC FIELDS WITH IMPROVED PROGRAMMABILITY AND LOW READING CONSUMPTION 审中-公开
标题翻译：用于感应磁场的磁性逻辑单元（MLU）具有改进的可编程性和低读数消耗
公开(公告)号：WO2016113619A1
公开(公告)日：2016-07-21
申请号：PCT/IB2015/059918
申请日：2015-12-23
申请人： CROCUS TECHNOLOGY SA
发明人： BANDIERA, Sébastien
IPC分类号： G01R33/09
CPC分类号： G01R33/098 , G01D5/16 , G01R33/0029 , G01R33/096 , G11C11/1659 , G11C11/1673
摘要： A magnetic logic unit (MLU) cell (1) for sensing magnetic fields, comprising: a magnetic tunnel junction (2) including a storage layer (23) having a storage magnetization (230, 234, 235), a sense layer (21) having a sense magnetization; a tunnel barrier layer (22) between the storage layer (23) and the sense layer (21); and a pinning layer (24) pinning the storage magnetization (230, 234, 235) at a low threshold temperature and freeing it at a high threshold temperature (TH); the sense magnetization (210) being freely alignable at the low and high threshold temperatures; the storage layer (23) inducing an exchange bias field (60) magnetically coupling the sense layer (21) such that the sense magnetization (210) tends to be aligned antiparallel or parallel to the storage magnetization (230, 234, 235); the tunnel barrier layer (22) being configured for generating an indirect exchange coupling (70) between the tunnel barrier layer (22) and the sense layer (21) providing an additional exchange bias field (71).
摘要翻译：一种用于感测磁场的磁逻辑单元（MLU）单元（1），包括：磁性隧道结（2），包括具有存储磁化（230,234,235）的存储层（23），感测层（21）具有感测磁化强度; 在所述存储层（23）和所述感测层（21）之间的隧道势垒层（22）; 和钉扎层（24），其在低阈值温度下固定存储磁化（230,234,235）并将其释放在高阈值温度（TH）; 感测磁化（210）可在低和高阈值温度下自由对准; 所述存储层（23）引起磁耦合所述感测层（21）的交换偏置场（60），使得所述感测磁化（210）倾向于反平行或平行于所述存储磁化（230,234,235）对齐; 所述隧道势垒层（22）被配置用于在所述隧道势垒层（22）和所述感测层（21）之间产生间接交换耦合（70），从而提供额外的交换偏置场（71）。

6. 发明申请

WO2016050615A1 ELECTRICAL INTERCONNECTING DEVICE FOR MRAM-BASED MAGNETIC DEVICES 审中-公开
标题翻译：用于基于MRAM的磁性器件的电气互连器件
公开(公告)号：WO2016050615A1
公开(公告)日：2016-04-07
申请号：PCT/EP2015/072031
申请日：2015-09-24
申请人： CROCUS TECHNOLOGY SA
发明人： CAMBOU, Bertrand
IPC分类号： H01L43/08 , H01L43/12 , H01L27/22
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1673 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Electrical interconnecting device (10) comprising: a magnetic tunnel junction (2); a strap portion (7) electrically connecting a lower end of the magnetic tunnel junction (2); a current line portion (3') electrically connecting an upper end of the magnetic tunnel junction (2); an upper metallic stud (8) electrically connecting a lower metallic stud (5) through a via (6); the strap portion (7) being in direct electrical contact with the via (6), such that a current passing in the magnetic tunnel junction (2) flows directly between the strap portion (') and the via (6) and between the via (6) and the lower metallic stud (5) or the upper metallic stud (8).
摘要翻译：电互连装置（10）包括：磁性隧道结（2）; 电连接磁性隧道结（2）的下端的带部分（7）; 电连接磁性隧道结（2）的上端的电流线部分（3'）; 通过通孔（6）电连接下金属螺柱（5）的上金属螺柱（8）; 所述带部分（7）与所述通孔（6）直接电接触，使得通过所述磁性隧道结（2）的电流直接在所述带部分（'）和所述通路（6）之间以及所述通孔（6）和下金属螺柱（5）或上金属螺柱（8）。

7. 发明申请

WO2016050614A1 SELF-REFERENCED MRAM CELL AND MAGNETIC FIELD SENSOR COMPRISING THE SELF-REFERENCED MRAM CELL 审中-公开
标题翻译：自参考MRAM单元和包含自参考MRAM单元的磁场传感器
公开(公告)号：WO2016050614A1
公开(公告)日：2016-04-07
申请号：PCT/EP2015/072029
申请日：2015-09-24
申请人： CROCUS TECHNOLOGY SA
发明人： STAINER, Quentin
IPC分类号： G11C11/16 , G01R33/09
CPC分类号： G11C11/1675 , G01R33/098 , G11C11/161 , G11C11/1673
摘要： The present disclosure concerns a self-referenced MRAM cell (1) comprising a reference layer(23) having a fixed reference magnetization (230), a sense layer (21) having a free sense magnetization (210),a tunnel barrier (22), a biasing layer (25) having bias magnetization (250) and a biasing antiferromagnetic layer (27) pinning the bias magnetization (250) in a bias direction when MRAM cell (1) is at temperature equal or below a bias threshold temperature (T B ); the bias magnetization (250) being arranged for inducing a bias field (251) adapted for biasing the sense magnetization (210) in a direction opposed to the bias direction, such that the biased sense magnetization (210) varies linearly in the presence of the external magnetic field, when the external magnetic field is oriented in a direction substantially perpendicular to the one of the reference magnetization (230). The present disclosure further concerns a magnetic field sensor (100) comprising a plurality of the self-referenced MRAM cell (1) and a method for programming the magnetic field sensor.
摘要翻译：本公开涉及包括具有固定参考磁化（230）的参考层（23），具有自由感测磁化（210）的感测层（21），隧道势垒（22））的自参考MRAM单元（1），当MRAM单元（1）处于等于或低于偏置阈值温度（TB）的温度时，具有偏压磁化（250）的偏压层（25）和偏置反铁磁层（27），以偏置磁化（250））; 偏置磁化（250）被布置用于感应适于偏置与偏置方向相反的方向的感测磁化（210）的偏置场（251），使得偏置感测磁化（210）在存在当外部磁场在基本上垂直于参考磁化（230）之一的方向上取向时，外部磁场。本公开还涉及包括多个自参考MRAM单元（1）的磁场传感器（100）和用于对磁场传感器进行编程的方法。

8. 发明申请

WO2015052063A1 MAGNETIC SENSOR CELL FOR MEASURING THREE-DIMENSIONAL MAGNETIC FIELDS 审中-公开
标题翻译：用于测量三维磁场的磁传感器单元
公开(公告)号：WO2015052063A1
公开(公告)日：2015-04-16
申请号：PCT/EP2014/071108
申请日：2014-10-01
申请人： CROCUS TECHNOLOGY SA
发明人： BANDIERA, Sébastien
IPC分类号： G01R33/09
CPC分类号： G01R33/098
摘要： A magnetic sensor cell (1) comprises a magnetic tunnel junction (2) comprising a reference layer (23) having a reference magnetization (230) oriented substantially parallel to the plane of the reference layer (23), a sense layer (21) having a sense magnetization (210), and a tunnel barrier layer (22) between the sense and reference layers (21, 23); and a magnetic device (4) configured for providing a sense magnetic field (42) adapted for aligning the sense magnetization (210). The sense layer magnetization (210) is orientable between a direction parallel to the plane of the sense layer (21) and a direction perpendicular to the plane of the sense layer (21) when the sense magnetic field (42) is provided. The magnetic sensor cell can be used for sensing an external magnetic field comprising a component (451) oriented parallel to the plane of the sense layer and a component (452) oriented perpendicular to the plane of the sense layer.
摘要翻译：磁传感器单元（1）包括磁性隧道结（2），其包括具有基本上平行于参考层（23）的平面定向的参考磁化（230）的参考层（23），感测层（21），其具有感测磁化（210）和在感测和参考层（21,23）之间的隧道势垒层（22）; 以及配置用于提供适于对准感测磁化（210）的感测磁场（42）的磁性装置（4）。当提供感测磁场（42）时，感测层磁化（210）可以在平行于感测层（21）的平面的方向和垂直于感测层（21）的平面的方向之间定向。磁传感器单元可以用于感测外部磁场，该外部磁场包括平行于感测层的平面定向的部件（451）和垂直于感测层的平面定向的部件（452）。

9. 发明申请

WO2014135385A1 SELF-REFERENCED MRAM CELL THAT CAN BE READ WITH REDUCED POWER CONSUMPTION 审中-公开
标题翻译：自动参考的MRAM电池可以读取降低功耗
公开(公告)号：WO2014135385A1
公开(公告)日：2014-09-12
申请号：PCT/EP2014/053442
申请日：2014-02-21
申请人： CROCUS TECHNOLOGY SA
发明人： STAINER, Quentin
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675 , H01L43/02 , H01L43/08
摘要： Self-referenced magnetic random access memory (MRAM) cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21); a storage layer (23) having a storage magnetization (230); a tunnel barrier layer (22) comprised between the sense and the storage layers (21, 23); and an antiferromagnetic layer (24) exchange-coupling the storage layer (23) such that the storage magnetization (230) can be pinned when the antiferromagnetic layer (24) is below a critical temperature and freely varied when the antiferromagnetic layer (24) is heated at or above the critical temperature; said sense layer (21) comprising a first sense layer (211) having a first sense magnetization (213), a second sense layer (212) having a second sense magnetization (214) and spacer layer (215) between the first and second sense layers (211, 212). The MRAM cell can be read with low power consumption.
摘要翻译：包括具有感应层（21）的磁性隧道结（2）的自参照磁随机存取存储器（MRAM）单元（1）; 存储层（23），具有存储磁化（230）; 包括在感测层和存储层（21,23）之间的隧道势垒层（22）; 和反铁磁层（24），交换耦合存储层（23），使得当反铁磁层（24）低于临界温度时，可以固定存储磁化（230），并且当反铁磁性层（24）为在临界温度以上加热; 所述感测层（21）包括具有第一感测磁化（213）的第一感测层（211），在第一和第二感测之间具有第二感测磁化（214）和间隔层（215）的第二感测层（212）层（211,212）。可以以低功耗读取MRAM单元。

10. 发明申请

WO2021176297A1 MAGNETIC SENSOR FOR MEASURING AN EXTERNAL MAGNETIC FIELD ANGLE IN A TWO-DIMENSIONAL PLANE AND METHOD FOR MEASURING SAID ANGLE USING THE MAGNETIC SENSOR 审中-公开
公开(公告)号：WO2021176297A1
公开(公告)日：2021-09-10
申请号：PCT/IB2021/051477
申请日：2021-02-22
申请人： CROCUS TECHNOLOGY SA
发明人： ZUCKER, Robert , FRITZ, Scott
IPC分类号： G01R33/00 , G01R33/06 , G01D5/14
摘要： Magnetic sensor for measuring an external magnetic field angle in a two-dimensional plane, comprising: a first and second sensing unit outputting, respectively, a first signal sin(θ) and a second signal cos(θ); a first multiplying DAC receiving the first signal and a first digital input sin(f*t) and outputting a first modulated output signal; a second multiplying DAC receiving the second signal and a second digital input cos(f*t) and outputting a second modulated output signal; a first RC filter receiving the first modulated output signal and outputting a first filtered signal sin(θ)*sin(f*t+RCd); a second RC filter receiving the second modulated output signal and outputting a second filtered signal sin(θ)*sin(f*t+RCd); an adder adding the first and second filtered signals and outputting a summed signal cos(f*t+RCd + θ); and an angle extracting unit for measuring the phase shift between the summed signal and a synchronization signal and determining the angle from the phase shift.

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