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51. 发明申请

WO2005004186A2 PARTICLE DETECTOR SUITABLE FOR DETECTING LONS AND ELECTRONS 审中-公开
标题翻译：适用于检测灯和电子的颗粒检测器
公开(公告)号：WO2005004186A2
公开(公告)日：2005-01-13
申请号：PCT/US2004/020527
申请日：2004-06-25
申请人： FEI COMPANY , GERLACH, Robert, L. , UTLAUT, Mark, W. , DINGLE, Trevor , UNCOVSKY, Marek
发明人： GERLACH, Robert, L. , UTLAUT, Mark, W. , DINGLE, Trevor , UNCOVSKY, Marek
IPC分类号： H01J
CPC分类号： H01J37/244 , H01J37/3005 , H01J43/06 , H01J49/025
摘要： A particle detector switchable from an ion detector to an electron detector includes an ion-to-electron converter and a scintillator detector. With one set of voltages on the components, the converter has minimal impact on the electron trajectories so the electrons are efficiently detected by the scintillator detector. With different voltage settings on the components, the detector can be operated in positive ion mode to collect positive ions with adequate efficiency for most FIB applications. The ion-to-electron converter is preferably in the shape of a cylinder or includes multiple parallel plates.
摘要翻译：可从离子检测器切换到电子检测器的粒子检测器包括离子 - 电子转换器和闪烁体检测器。在组件上具有一组电压，转换器对电子轨迹的影响最小，因此闪烁体检测器有效地检测电子。通过对组件进行不同的电压设置，检测器可以以正离子模式运行，以便大多数FIB应用具有足够的效率来收集正离子。离子 - 电子转换器优选为圆柱形或包括多个平行板。

52. 发明申请

WO2004044596A3 DEFECT ANALYZER 审中-公开
公开(公告)号：WO2004044596A3
公开(公告)日：2004-05-27
申请号：PCT/US2003/036017
申请日：2003-11-12
申请人： FEI COMPANY , TESHIMA, Janet , PARTIN, Daniel, E. , HUDSON, James, E.
发明人： TESHIMA, Janet , PARTIN, Daniel, E. , HUDSON, James, E.
IPC分类号： G06F11/00
摘要： The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.

53. 发明申请

WO2003028065A3 ELECTROSTATIC MANIPULATING APPARATUS 审中-公开
公开(公告)号：WO2003028065A3
公开(公告)日：2003-04-03
申请号：PCT/IB2002/003730
申请日：2002-09-10
申请人： FEI COMPANY
发明人： ASJES, Ronald, J.
IPC分类号： H01J37/20
摘要： An electrostatic manipulating apparatus for handling a sample (1) during and after removal from semiconductor wafers (3) under a continuous vacuum, comprising a fork (7) of at least two electrically conductive elements (10) capable of exerting an electrostatic force on said sample. Preferably all electrically conductive elements are covered by a thin coating of insulating material for improved contact and release.

54. 发明申请

WO2003012551A1 ELECTRON BEAM PROCESSING 审中-公开
标题翻译：电子束处理
公开(公告)号：WO2003012551A1
公开(公告)日：2003-02-13
申请号：PCT/US2002/023846
申请日：2002-07-27
申请人： FEI COMPANY , MUSIL, Christian, R. , CASEY, David, J., Jr. , GANNON, Thomas, J. , CHANDLER, Clive , DA, Xiadong
发明人： MUSIL, Christian, R. , CASEY, David, J., Jr. , GANNON, Thomas, J. , CHANDLER, Clive , DA, Xiadong
IPC分类号： G03F9/00
CPC分类号： G03F1/74 , H01J37/3053 , H01J37/3056 , H01J2237/31744
摘要： A method and apparatus for electron beam processing using an electron beam (101) activated gas to etch or deposit material. The invention is particularly suitable for repairing defects in lithography masks. By using an electron beam (101) in place of an ion beam, the many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch the substrate. In one embodiment, xenon ditluoride gas is activated by the electron beam (101) to etch a tungsten, tantalum nitride, or molybdenum silicide film on a transmission or reflection mask. To prevent spontaneous etching by the etchant gas in processed sites at which the passivation layer was removed, processed sites can be re-passivated before processing additional sites.
摘要翻译：一种使用电子束（101）活化气体蚀刻或沉积材料的电子束处理方法和装置。本发明特别适用于修补光刻掩模中的缺陷。通过使用电子束（101）代替离子束，消除了与离子束掩模修复相关的许多问题，例如染色和河床。端点检测并不重要，因为电子束和气体不会蚀刻衬底。在一个实施方案中，氙气二氧化物气体被电子束（101）激活以蚀刻透射或反射掩模上的钨，氮化钽或硅化钼膜。为了防止蚀刻剂气体在去除钝化层的处理部位中的自发蚀刻，可以在处理其它部位之前重新钝化加工部位。

55. 发明申请

WO2002059926A2 FABRICATION OF HIGH RESISTIVITY STRUCTURES USING FOCUSED ION BEAMS 审中-公开
标题翻译：使用聚焦离子束制造高电阻结构
公开(公告)号：WO2002059926A2
公开(公告)日：2002-08-01
申请号：PCT/US2002/002075
申请日：2002-01-25
申请人： FEI COMPANY , BASSOM, Neil, J. , MAI, Tung
发明人： BASSOM, Neil, J. , MAI, Tung
IPC分类号： H01J
CPC分类号： H01L28/24 , C23C16/047 , H01J37/08 , H01J2237/31737 , H01J2237/31749 , H01L21/28562
摘要： The present invention provides a method for creating microscopic high resistivity structures on a target by directing a focused ion beam toward an impact point on the target and directing a precursor gas toward the impact point, the ion beam causing the precursor gas to decompose and thereby deposit a structure exhibiting high resistivity onto the target. The precursor gas preferably comprises a first compound that would form a conductive layer and a second compound that would form an insulating layer if each of the first and second compounds were applied alone in the presence of the ion beam.
摘要翻译：本发明提供了一种用于通过将聚焦离子束引向目标上的冲击点并将前体气体引导到冲击点的方式，用于在目标上产生微观高电阻率结构，所述离子束使前体气体分解并由此沉积在靶上表现出高电阻率的结构。前体气体优选包括形成导电层的第一化合物和如果在离子束存在下单独施加第一和第二化合物中的每一种，则形成绝缘层的第二化合物。

56. 发明申请

WO2017079665A1 WAVEFORM MAPPING AND GATED LASER VOLTAGE IMAGING 审中-公开
标题翻译：波形图和门控激光电压成像
公开(公告)号：WO2017079665A1
公开(公告)日：2017-05-11
申请号：PCT/US2016/060689
申请日：2016-11-04
申请人： FEI COMPANY
发明人： NEMIROW, Christopher , LESLIE, Neel
IPC分类号： G01N21/88 , G01R31/317 , H01L21/66
CPC分类号： G01R31/311 , G01R31/01 , G01R31/31705 , G02B21/002
摘要： Systems, methods, and computer readable media to improve integrated circuit (IC) debug operations are described. In general, techniques are disclosed for acquiring/recording waveforms across an under-test IC during a single sweep of a laser scanning microscope (LSM). More particularly, techniques disclosed herein permit the acquisition of an integrated circuit's response to a test signal at each location across the IC in real-time. In practice the test signal consists of a stimulus portion that repeats after a given period. In one embodiment, the IC's response to multiple complete stimulus portions may be averaged and digitized. In another embodiment, the IC's response to multiple partial stimulus portions may be averaged and digitized. As used herein, the former approach is referred to as waveform mapping, the latter as gated-LVI.
摘要翻译：描述了用于改善集成电路（IC）调试操作的系统，方法和计算机可读介质。一般而言，公开了用于在激光扫描显微镜（LSM）的单次扫描期间获取/记录跨过被测试IC的波形的技术。更具体地，本文公开的技术允许实时获取集成电路对跨IC的每个位置处的测试信号的响应。在实践中，测试信号由在给定时间段之后重复的刺激部分组成。在一个实施例中，IC对多个完整刺激部分的响应可被平均并数字化。在另一个实施例中，IC对多个部分刺激部分的响应可以被平均并数字化。如本文所用，前一种方法被称为波形映射，后者被称为门控-LVI。

57. 发明申请

WO2016028655A1 CORRECTION OF BEAM HARDENING ARTIFACTS IN MICROTOMOGRAPHY FOR SAMPLES IMAGED IN CONTAINERS 审中-公开
标题翻译：用于在容器中成像的样品的微阵列中的光束硬化装置的校正
公开(公告)号：WO2016028655A1
公开(公告)日：2016-02-25
申请号：PCT/US2015/045442
申请日：2015-08-15
申请人： FEI COMPANY
发明人： HOLT, Jeremy James , KINGSTON, Andrew Maurice , SHEPPARD, Adrian Paul
IPC分类号： G06T11/00
CPC分类号： G06T11/008 , G06K9/6218 , G06K9/6277 , G06T7/11 , G06T11/006 , G06T2207/10081 , G06T2207/10116 , G06T2207/30181 , G06T2211/408 , G06T2211/424
摘要： Provided are improved referenceless multi-material beam hardening correction methods, with an emphasis on maintaining data quality for real-world imaging of geologic materials with a view towards automation. A referenceless post reconstruction (RPC) correction technique is provided that applies the corrections in integrated attenuation space. A container-only pre-correction technique also is provided to allow automation of the segmentation process required for beam hardening correction methods.
摘要翻译：提供了改进的无参考多材料光束硬化校正方法，重点是保持数据质量，以实现地质材料的自动化成像。提供了一种无参考后重建（RPC）校正技术，可将校正应用于积分衰减空间。还提供了仅容器的预校正技术以允许光束硬化校正方法所需的分割过程的自动化。

58. 发明申请

WO2014110379A1 ION IMPLANTATION TO ALTER ETCH RATE 审中-公开
标题翻译：离子注入改变蚀刻速率
公开(公告)号：WO2014110379A1
公开(公告)日：2014-07-17
申请号：PCT/US2014/011057
申请日：2014-01-10
申请人： FEI COMPANY
发明人： FOORD, David , RUE, Chad
IPC分类号： G01N1/28 , G01N23/225
CPC分类号： H01J37/3056 , G01N1/32 , H01J37/3171 , H01J2237/31713 , H01J2237/31745 , H01J2237/31749 , Y10T428/24479
摘要： Implanting a material in a pattern hardens the material in the pattern for subsequent etching. When the region is etched, by ion beam sputtering, chemically enhanced charged particle beam etching, or chemical etching, a thicker structure remains because of the reduced etch rate of the hardened pattern. The invention is particularly useful for the preparation of thin lamella for viewing on a transmission electron microscope.
摘要翻译：将图案中的材料植入图案中使材料硬化以用于随后的蚀刻。由于硬化图案的蚀刻速率降低，当该区域被蚀刻时，通过离子束溅射，化学增强的带电粒子束蚀刻或化学蚀刻，保留较厚的结构。本发明对于制备用于在透射电子显微镜上观察的薄薄片特别有用。

59. 发明申请

WO2014106182A1 FIDUCIAL DESIGN FOR TILTED OR GLANCING MILL OPERATIONS WITH A CHARGED PARTICLE BEAM 审中-公开
标题翻译：具有充电颗粒光束的倾斜或移动铣刀操作的设计
公开(公告)号：WO2014106182A1
公开(公告)日：2014-07-03
申请号：PCT/US2013/078315
申请日：2013-12-30
申请人： FEI COMPANY
发明人： STONE, Stacey , LEE, Sang Hoon , BLACKWOOD, Jeffrey , SCHMIDT, Michael , KIM, Hyun Hwa
IPC分类号： H01J37/317
CPC分类号： H01J37/317 , H01J37/3056 , H01J2237/221 , H01J2237/226 , H01J2237/2814 , H01J2237/31745
摘要： A method for analyzing a sample with a charged particle beam including directing the beam toward the sample surface; milling the surface to expose a second surface in the sample in which the end of the second surface distal to ion source is milled to a greater depth relative to a reference depth than the end of the first surface proximal to ion source; directing the charged particle beam toward the second surface to form one or more images of the second surface; forming images of the cross sections of the multiple adjacent features of interest by detecting the interaction of the electron beam with the second surface; assembling the images of the cross section into a three-dimensional model of one or more of the features of interest. A method for forming an improved fiducial and determining the depth of an exposed feature in a nanoscale three-dimensional structure is presented.
摘要翻译：一种用于分析具有带电粒子束的样品的方法，包括将束朝向样品表面引导; 铣削表面以暴露样品中的第二表面，其中远离离子源的第二表面的端部相对于参考深度比距离离子源的第一表面的端部更深的深度; 将带电粒子束引向第二表面以形成第二表面的一个或多个图像; 通过检测电子束与第二表面的相互作用形成感兴趣的多个相邻特征的横截面的图像; 将横截面的图像组装成感兴趣的一个或多个特征的三维模型。提出了一种用于形成改进的基准并确定纳米尺度三维结构中暴露特征的深度的方法。

60. 发明申请

WO2013049646A1 MICROSCOPE DEVICE 审中-公开
标题翻译： MICROSCOPE设备
公开(公告)号：WO2013049646A1
公开(公告)日：2013-04-04
申请号：PCT/US2012/058027
申请日：2012-09-28
申请人： FEI COMPANY
发明人： UHL, Rainer , SCHROPP, Martin
IPC分类号： G02B21/00 , G01N21/63
CPC分类号： G02B21/06 , G01N21/6458 , G02B21/0032 , G02B21/14 , G02B21/367 , G02B27/58
摘要： A microscope has an objective, a light source illuminating a sample over an illumination beam path, an arrangement producing a flat illumination pattern which is structured in both spatial directions on the sample, a surface detector detecting light coming over one picture beam path, an arrangement shifting the illumination pattern on the sample in one displacement direction, and a control unit taking one picture at a time of the light which was detected by the detector as phase picture in different positions of the pattern along the displacement direction and to computationally reconstruct from these phase pictures an overall picture of the illuminated sample region. The displacement direction is oblique to the main axes of symmetry of the illumination pattern and depending on the illumination pattern is chosen such that the number of phase pictures which is necessary for the picture reconstruction corresponds to the theoretically minimally required value.
摘要翻译：显微镜具有目的，在照明光束路径上照射样本的光源，产生在样本上沿两个空间方向构造的平坦照明图案的布置，检测来自一个图像束路径的光的表面检测器，在一个位移方向上移动样品上的照明图案，以及控制单元，将由检测器检测到的光中的一个图像作为沿图案的位移方向的不同位置的相位图像，并从这些位置进行计算重建照相样品区域的整体图像。位移方向与照明图案的主要对称轴倾斜，并且根据照明图案被选择，使得图像重建所需的相位图像的数量对应于理论上最低要求的值。

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