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    • 52. 发明申请
    • FEEDBACK FIFO FOR CYCLIC DATA ACQUISITION AND NMR INSTRUMENT CONTROL
    • 反馈FIFO用于循环数据采集和NMR仪器控制
    • WO1981001881A1
    • 1981-07-09
    • PCT/US1980001661
    • 1980-12-08
    • VARIAN ASSOCIATES INC
    • VARIAN ASSOCIATES INCBERKOWITZ E
    • G01N27/00
    • G01R33/28
    • Cyclic instrument control and data acquisition functions which are critically dependent upon synchrony are directed from a computer based system including a FIFO buffer (30) adapted to feedback the most recently active word from its output register (36) and re-store said word at a corresponding sequential position (34) in the FIFO queue. To accomodate complex and interleaved control and data acquisition cycles, each FIFO word has a state portion for commanding external devices, a persistence portion for specifying the duration of selected state active in the FIFO output buffer for a desired persistence interval, and a repetition portion for specifying the number of consecutive discrete repetitions of the currently active state-persistence datum at the output of the FIFO. Termination of the cyclic sequence is accomplished at the expiration of a preselected number of complete cycles. The FIFO input address is selected automatically in accord with the number of words comprising a single complete sequence of instrument control/data inquisition functions.
    • 严格依赖于同步的循环仪器控制和数据获取功能是从包括适于从其输出寄存器(36)反馈最近活动的字的FIFO缓冲器(30)的基于计算机的系统引导的,并且在一 FIFO队列中相应的顺序位置(34)。 为了适应复杂和交错的控制和数据采集周期,每个FIFO字具有用于命令外部设备的状态部分,用于指定期望的持续时间间隔在FIFO输出缓冲器中指定所选状态的持续时间的持续部分,以及用于 指定FIFO输出端当前活动的状态持久性数据的连续离散重复次数。 循环序列的终止在预选数量的完整循环期满时完成。 FIFO输入地址根据包含单个完整的仪器控制/数据查询功能序列的字数自动选择。
    • 53. 发明申请
    • CHARGE SENSITIVE AMPLIFIER WITH HIGH COMMON MODE SIGNAL REJECTION
    • 具有高通用模式信号抑制的充电灵敏放大器
    • WO1998024176A1
    • 1998-06-04
    • PCT/US1997020872
    • 1997-11-13
    • VARIAN ASSOCIATES, INC.
    • VARIAN ASSOCIATES, INC.COLBETH, Richard, E.ALLEN, Max, J.MALLINSON, Martin
    • H03F03/45
    • H03F3/45076H03F1/223H03F3/345
    • A charge sensitive amplifier with high common mode signal rejection includes an NPN bipolar junction transistor (BJT) and a P-channel metal oxide semiconductor field effect transistor (MOSFET) connected in a totem pole circuit configuration. The BJT base terminal receives a dc reference voltage, the MOSFET gate terminal receives the incoming data signal, the MOSFET drain terminal is grounded and the BJT collector terminal provides the output voltage signal and is biased by the power supply through a resistive circuit element. The MOSFET operates as a source follower amplifier with the transconductance of the BJT serving as the load at the source terminal, while the BJT operates as a common emitter amplifier with the transconductance of the MOSFET providing emitter degeneration. The signal gains of such source follower and common emitter amplifiers are substantially equal and of opposite polarities. Therefore, any common mode signal components due to common mode input signals present at the input terminals (i.e., the BJT base and MOSFET gate terminals) which would otherwise appear within the output signal are substantially cancelled, thereby resulting in a high degree of common mode signal rejection.
    • 具有高共模信号抑制的电荷敏感放大器包括连接在图腾柱电路配置中的NPN双极结晶体管(BJT)和P沟道金属氧化物半导体场效应晶体管(MOSFET)。 BJT基极端子接收直流参考电压,MOSFET栅极端子接收输入数据信号,MOSFET漏极端子接地,BJT集电极端子提供输出电压信号,并由电源通过电阻电路元件偏置。 MOSFET作为源极跟随器放大器,BJT的跨导用作源极端子的负载,而BJT作为公共发射极放大器工作,MOSFET的跨导提供发射极退化。 这种源极跟随器和公共发射极放大器的信号增益基本相等并具有相反的极性。 因此,由于存在于输出端子(即,BJT基极和MOSFET栅极端子)处的共模输入信号的任何共模信号分量基本上被消除,从而导致高度的共模 信号抑制
    • 54. 发明申请
    • PIPELINED SAMPLE AND HOLD CIRCUIT WITH CORRELATED DOUBLE SAMPLING
    • 管路采样和保持电路与相关的双重采样
    • WO1998024092A1
    • 1998-06-04
    • PCT/US1997021164
    • 1997-11-19
    • VARIAN ASSOCIATES, INC.
    • VARIAN ASSOCIATES, INC.MALLINSON, MartinALLEN, Max, J.COLBETH, Richard, E.
    • G11C27/02
    • G11C27/026
    • A signal sampling circuit for performing correlated double sampling (CDS) of an input signal with a pipelined sample and hold architecture includes a time multiplexed integrating amplifier circuit in which the output circuit is a pipelined sample and hold circuit which provides time multiplexed input signal samples and the feedback integration capacitor is discharged between samples. At all times, one of the channels of the pipelined sample and hold circuit is providing one of the time multiplexed input signal samples while the other channel continues tracking the input signal. The feedback integration capacitor acts as a clamp to null out residual reset noise received as part of the input signal to be sampled. Hence, with the exception of that very brief period of time necessary for switching between the two pipelined sample and hold circuit channels, one of the two pipelined sample and hold circuit channels is always available for signal acquisition.
    • 一种用于执行具有流水线采样和保持架构的输入信号的相关双采样(CDS)的信号采样电路包括时间复用积分放大器电路,其中输出电路是提供时间复用输入信号样本的流水线采样和保持电路, 反馈积分电容器在采样之间放电。 在任何时候,流水线采样和保持电路的一个通道是提供时间复用输入信号采样之一,而另一个通道继续跟踪输入信号。 反馈积分电容器用作钳位,以将作为要采样的输入信号的一部分接收的残留复位噪声清零。 因此,除了在两个流水线采样和保持电路通道之间切换所需的非常短暂的时间段之外,两个流水线采样和保持电路通道之一总是可用于信号采集。
    • 56. 发明申请
    • X-RAY IMAGING APPARATUS AND METHOD USING A FLAT AMORPHOUS SILICON IMAGING PANEL
    • X射线成像装置和使用平面非晶硅成像面板的方法
    • WO1998003884A1
    • 1998-01-29
    • PCT/US1997011497
    • 1997-06-30
    • VARIAN ASSOCIATES, INC.
    • VARIAN ASSOCIATES, INC.GILBLOM, David, L.
    • G01T01/24
    • A61B6/542A61B6/00A61B6/4233G01T1/023G01T1/026G01T1/2018H05G1/26H05G1/44
    • An x-ray imaging apparatus receives an image-carrying x-ray beam (12) on a flat amorphous silicon imaging panel (20) with a light detector unit (40) disposed behind. The imaging panel is of a multilayered structure having sequentially a light-blocking layer (26) which is opaque to visible light but transmissive to x-rays, a converting layer of a phosphorescent material (98) for converting x-rays incident thereon into visible light, and a two-dimensional array of photosensitive elements (30) of an amorphous semiconductor material such as amorphous silicon, adapted to undergo a detectable change in electrical characteristic in response to impingement of light. The light detector unit (40) may be a simple light detector for receiving the light emitted from the converting layer and passed through regions between neighboring pairs of the array of photosensitive elements (30). Since the energy of light thus detected is directly proportional to the total light energy emitted from the converting layer, the output signal from such a light detector unit can be conveniently used for the exposure control of the imaging panel.
    • x射线成像装置在平坦的非晶硅成像面板(20)上接收具有放置在后面的光检测器单元(40)的载像X射线束(12)。 成像面板具有多层结构,其顺序地具有对可见光不透明但对X射线透射的阻光层(26),磷光发光材料(98)的转换层用于将入射到其上的X射线转换为可见光 光以及诸如非晶硅的非晶半导体材料的光敏元件(30)的二维阵列,其适于响应于光的撞击而经受可检测的电特性变化。 光检测器单元(40)可以是简单的光检测器,用于接收从转换层发射的光并通过感光元件阵列(30)的相邻对之间的区域。 由于这样检测到的光的能量与从转换层发射的总光能成正比,所以来自这种光检测器单元的输出信号可以方便地用于成像面板的曝光控制。
    • 59. 发明申请
    • X-RAY TUBE HAVING ROTARY ANODE COOLED WITH HIGH THERMAL CONDUCTIVITY FLUID
    • 具有高导热性流体冷却的旋转阳极的X射线管
    • WO1995019039A1
    • 1995-07-13
    • PCT/US1995000059
    • 1995-01-09
    • VARIAN ASSOCIATES, INC.
    • VARIAN ASSOCIATES, INC.ANDERSON, Wetson, A.ARNOLD, James, T.LAVERING, Gordon, R.DUFFIELD, Jack, J.
    • H01J35/10
    • H01J35/106H01J2235/1204H01J2235/1279H05G1/025H05G1/04
    • An X-ray tube rotating anode (14) is cooled with a liquid metal (40) functioning as a recirculated heat exchange fluid and/or a metal film in a gap (39) between the anode (14) and a stationary structure. The liquid metal (40) is confined to the gap (39) by (a) a labyrinth (44 or 46) having a coating that is not wetted by the liquid, (b) a magnetic structure (22), or (c) a wick (38). The liquid metal (40) recirculated through the anode (14) is cooled in a heat exchanger located either outside the tube or in the tube so it is surrounded by the anode (14). The heat exchanger in the tube includes a mass of metal in thermal contact with the recirculating liquid metal and including numerous passages (36) for a cooling fluid, e.g. water. A high thermal conductivity path (26, 48, 49) is provided between an anode region (16) bombarded by electrons and a central region of the tube where heat is extracted. In one embodiment the high thermal conductivity is achieved by stacked pyrolytic structures having crystalline axes arranged so there is high heat conductivity radially of the region and lower thermal heat conductivity normal to the high heat conductivity direction.
    • X射线管旋转阳极(14)用位于阳极(14)和固定结构之间的间隙(39)中作为循环热交换流体和/或金属膜起作用的液体金属(40)进行冷却。 液体金属(40)通过(a)具有不被液体润湿的涂层的迷宫(44或46),(b)磁性结构(22)或(c)被限制在间隙(39) 一个灯芯(38)。 通过阳极(14)再循环的液态金属(40)在位于管外部或管内的热交换器中冷却,使其被阳极(14)包围。 管中的热交换器包括与再循环液体金属热接触的金属块,并且包括用于冷却流体的许多通道(36),例如, 水。 在由电子轰击的阳极区域(16)和提取热量的管的中心区域之间提供高热导率路径(26,48,49)。 在一个实施方案中,通过堆叠的热解结构实现了高热导率,其具有排列的晶轴,因此在该区域内径向具有高热传导性,并且较低的导热方向的热传导率较低。
    • 60. 发明申请
    • ELECTROSTATIC WAFER CLAMP
    • 静电防水夹
    • WO1994011944A1
    • 1994-05-26
    • PCT/US1993010502
    • 1993-11-01
    • VARIAN ASSOCIATES, INC.
    • VARIAN ASSOCIATES, INC.FRUTIGER, A., William
    • H02N13/00
    • H02N13/00H01L21/6831H01L21/6833
    • Apparatus for electrostatic clamping of a semiconductor wafer (12). In a first embodiment, the apparatus includes an electrically conductive platen (110), a resilient, thermally-conductive dielectric layer (14) affixed to the platen (12) and one or more conductive wires (20, 22, 24) positioned on the clamping surface (18). In a second embodiment, a three-phase wafer clamping apparatus includes a platen (90) divided into three electrically isolated sections (92, 94, 96). One phase of a three-phase clamping voltage is connected to each of the platen sections (92, 94, 96). In a third embodiment, a six phase wafer clamping apparatus includes a platen (200) having six symmetrically located electrodes (210, 212, 214, 216, 218, 220). Voltages with six different phases are applied to the electrodes (210, 212, 214, 216, 218, 220) with the voltages applied to electrodes on opposite sides of the platen being one-half cycle out of phase. The applied voltages are preferably bipolar square waves.
    • 用于半导体晶片(12)的静电夹持的装置。 在第一实施例中,该装置包括导电压板(110),固定到压板(12)的弹性导热介电层(14)和位于该压板上的一个或多个导线(20,22,24) 夹紧表面(18)。 在第二实施例中,三相晶片夹紧装置包括被分成三个电隔离部分(92,94,96)的压板(90)。 三相钳位电压的一相连接到每个压板部分(92,94,96)。 在第三实施例中,六相晶片夹紧装置包括具有六个对称定位的电极(210,212,214,216,218,220)的压板(200)。 具有六个不同相位的电压被施加到电极(210,212,214,216,218,220),其中施加到压板的相对侧上的电极的电压异相二个周期。 所施加的电压优选为双极方波。