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    • 60. 发明申请
    • SILICON WAFER FOR PROBE BONDING AND PROBE BONDING METHOD USING THEREOF
    • 用于探头连接和探头连接方法的硅晶片
    • WO2005122240A1
    • 2005-12-22
    • PCT/KR2005/001806
    • 2005-06-14
    • PHICOM CORPORATIONLEE, Jung-Hoon
    • LEE, Jung-Hoon
    • H01L21/66
    • G01R3/00G01R1/07342
    • Disclosed herein are a silicon wafer for probe bonding and a probe bonding method using the same.The silicon wafer for probe bonding is improved in structure to facilitate probe bonding on a probe substrate. The probe bonding method involves bonding supporting beams on the silicon wafer to bumps on the probe substrate. The silicon wafer is formed at a surface thereof with probe tips and supporting beams on an end of each probe tip to have a redetermined arrangement pattern. The silicon wafer is further formed with openings from an upper surface to a lower surface thereof. A portion of each supporting beam opposite to the probe tips protrudes is exposed to the outside through the openings.
    • 这里公开了用于探针接合的硅晶片和使用该硅晶片的探针接合方法。用于探针接合的硅晶片的结构得到改善,以便于探针基底上的探针接合。 探针接合方法包括将硅晶片上的支撑束粘合到探针基板上的凸起。 硅晶片在其表面处形成有探针尖端和支撑梁,每个探针尖端的端部具有重新确定的布置图案。 硅晶片还形成有从上表面到下表面的开口。 与探针尖端相反的每个支撑梁的一部分突出通过开口暴露于外部。