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31. 发明申请

WO2011122280A1 SEMICONDUCTOR DISPLAY DEVICE 审中-公开
标题翻译：半导体显示设备
公开(公告)号：WO2011122280A1
公开(公告)日：2011-10-06
申请号：PCT/JP2011/055559
申请日：2011-03-02
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun
IPC分类号： H01L29/786 , G09F9/30 , G09G3/20 , G09G3/30 , G09G3/36
CPC分类号： G09G3/3688 , G09G2300/0417
摘要： A semiconductor display device comprising a pixel portion and a signal line driver circuit comprising a first circuit, a second circuit configured to control timing of the sampled serial video signals by the first circuit, and a third circuit configured to perform signal processing on the parallel video signals, wherein the second circuit comprises a first semiconductor element formed over a first substrate, the first semiconductor element including a first semiconductor layer, wherein the third circuit comprises a second semiconductor element formed over a second substrate, the second semiconductor element including a second semiconductor layer, wherein the pixel portion comprises a third semiconductor element formed over the second substrate, the third semiconductor element including a third semiconductor layer, wherein the first semiconductor layer comprises silicon or germanium, and wherein each the second semiconductor layer and the third semiconductor layer has a wider bandgap than the first semiconductor layer.
摘要翻译：一种半导体显示装置，包括像素部分和信号线驱动电路，该电路包括第一电路，第二电路，被配置为控制第一电路对采样的串行视频信号的定时;以及第三电路，被配置为对并行视频执行信号处理信号，其中所述第二电路包括形成在第一衬底上的第一半导体元件，所述第一半导体元件包括第一半导体层，其中所述第三电路包括形成在第二衬底上的第二半导体元件，所述第二半导体元件包括第二半导体层，其中所述像素部分包括形成在所述第二基板上的第三半导体元件，所述第三半导体元件包括第三半导体层，其中所述第一半导体层包括硅或锗，并且其中所述第二半导体层和所述第三半导体层中的每一个具有更宽的带隙第一半导体层。

32. 发明申请

WO2011111502A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：WO2011111502A1
公开(公告)日：2011-09-15
申请号：PCT/JP2011/053583
申请日：2011-02-14
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , KOYAMA, Jun , YAMAZAKI, Shunpei
发明人： KOYAMA, Jun , YAMAZAKI, Shunpei
IPC分类号： G09G3/36 , G02F1/1368 , G09G3/20
CPC分类号： G09G3/3618 , G09G3/3677 , G09G2310/0286 , G09G2310/0294 , G09G2310/04 , G09G2320/103
摘要： A controller outputs a row rewriting control signal and a column rewriting control signal as well as a data signal. The row rewriting control signal is a signal selecting whether a selection signal is supplied to a first scan line, and the column rewriting control signal is a signal selecting whether a selection signal and a data signal are supplied to the second scan line and the signal line, respectively. The row rewriting control signal and the column rewriting control signal are thus output from the controller, which makes it possible to select whether a data signal is rewritten in each of a plurality of pixels arranged in matrix. Consequently, even in the case of displaying an image having a specific area, the display of which is often changed, a high-quality image can be displayed with reduced power consumption.
摘要翻译：控制器输出行重写控制信号和列重写控制信号以及数据信号。行重写控制信号是选择是否向第一扫描线提供选择信号的信号，并且列重写控制信号是选择是否向第二扫描线和信号线提供选择信号和数据信号的信号，分别。因此，从控制器输出行重写控制信号和列重写控制信号，这使得可以选择在矩阵中排列的多个像素中的每一个中是否重写数据信号。因此，即使在显示具有特定区域的图像的情况下，其显示经常改变，可以以降低的功耗显示高质量图像。

33. 发明申请

WO2011105218A1 DISPLAY DEVICE AND E-BOOK READER PROVIDED THEREWITH 审中-公开
标题翻译：显示设备和电子书阅读器
公开(公告)号：WO2011105218A1
公开(公告)日：2011-09-01
申请号：PCT/JP2011/052801
申请日：2011-02-03
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun
IPC分类号： G09G3/36 , G02F1/133 , G09G3/20 , G09G5/00
CPC分类号： G09G3/3648 , G09G2340/0435
摘要： An object is to provide a display device in which deterioration in display quality due to a change in voltage applied is reduced and a lower visible efficiency in changing display is prevented. The display device has a display controller configured to make the display portion perform display by switching a first still image display period including a writing period in which a first image signal is written and a holding period in which the first image signal is held, and a second still image display period including a writing period in which a second image signal is written and a holding period in which the second image signal is held. The display controller is configured to make a length of the writing period of the first still image display period and a length of the writing period of the second still image display period different from each other.
摘要翻译：本发明的目的是提供一种显示装置，其中由于施加的电压变化引起的显示质量的劣化被降低，并且防止了改变显示的较低的可见效率。显示装置具有显示控制器，其被配置为通过切换包括写入第一图像信号的写入周期和保持第一图像信号的保持周期的第一静止图像显示周期来使显示部分进行显示，第二静止图像显示周期包括写入第二图像信号的写入周期和保持第二图像信号的保持周期。显示控制器被配置为使第一静止图像显示周期的写入周期的长度和第二静止图像显示周期的写入周期的长度彼此不同。

34. 发明申请

WO2011089841A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011089841A1
公开(公告)日：2011-07-28
申请号：PCT/JP2010/073844
申请日：2010-12-22
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun
IPC分类号： H03K17/687 , H01L21/336 , H01L29/786 , H02J7/00
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1255 , H01L29/045 , H01L29/0657 , H01L29/1033 , H01L29/24 , H01L29/45 , H01L29/78645 , H03K17/0822
摘要： The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current.
摘要翻译：该半导体器件包括：功率元件，其在不向栅极施加电压时处于导通状态，用于向功率元件的栅极施加第一电压的开关场效应晶体管，以及用于施加电压的开关场效应晶体管低于功率元件的栅极的第一电压。开关场效应晶体管具有小的截止电流。

35. 发明申请

WO2011078373A1 MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE 审中-公开
标题翻译：存储器件，半导体器件和电子器件
公开(公告)号：WO2011078373A1
公开(公告)日：2011-06-30
申请号：PCT/JP2010/073478
申请日：2010-12-17
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , KOYAMA, Jun , YAMAZAKI, Shunpei
发明人： KOYAMA, Jun , YAMAZAKI, Shunpei
IPC分类号： H03K3/356 , H01L21/8234 , H01L21/8242 , H01L27/08 , H01L27/088 , H01L27/10 , H01L27/108 , H01L29/786
CPC分类号： H01L27/1225 , G06F1/206 , G11C11/412 , G11C27/024 , H01L21/84 , H01L27/0629 , H01L27/11517 , H01L27/1203 , H03K19/094 , H03K19/0948
摘要： An object is to provide a memory device which does not need a complex manufacturing process and whose power consumption can be suppressed, and a semiconductor device including the memory device. A solution is to provide a capacitor which holds data and a switching element which controls storing and releasing charge in the capacitor in a memory element. In the memory element, a phase-inversion element such as an inverter or a clocked inverter includes the phase of an input signal is inverted and the signal is output. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. In the case where application of a power supply voltage to the phase-inversion element is stopped, the data is stored in the capacitor, so that the data is held in the capacitor even when the application of the power supply voltage to the phase-inversion element is stopped.
摘要翻译：本发明的目的是提供一种不需要复杂制造工艺并且可以抑制其功耗的存储器件，以及包括存储器件的半导体器件。解决方案是提供一种保存数据的电容器和控制存储元件中的电容器中的电荷的存储和释放的开关元件。在存储元件中，诸如反相器或时钟反相器的相位反转元件包括输入信号的相位被反相并输出信号。对于开关元件，使用在沟道形成区域中包括氧化物半导体的晶体管。在向相位反转元件施加电源电压的情况下，将数据存储在电容器中，即使将电源电压施加到相位反转也保持在电容器中元素停止。

36. 发明申请

WO2011077946A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011077946A1
公开(公告)日：2011-06-30
申请号：PCT/JP2010/071948
申请日：2010-12-01
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
IPC分类号： H01L27/105 , H01L21/8234 , H01L21/8242 , H01L21/8244 , H01L21/8247 , H01L27/06 , H01L27/08 , H01L27/088 , H01L27/10 , H01L27/108 , H01L27/11 , H01L27/115 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： H01L27/1255 , G11C16/0433 , G11C16/26 , H01L21/84 , H01L27/108 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/11517 , H01L27/11521 , H01L27/1156 , H01L27/11803 , H01L27/1225 , H01L29/24 , H01L29/7869
摘要： An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.
摘要翻译：本发明的目的是提供一种具有新颖结构的半导体器件，其中在数据存储时间中，即使在不提供电力的情况下也可以存储所存储的数据，并且对写入次数没有限制。半导体器件包括：第一晶体管，包括第一源极和第一漏极; 使用氧化物半导体材料并且第一源电极和第一漏电极电连接的第一沟道形成区域; 在所述第一通道形成区域上的第一栅极绝缘层; 以及在所述第一栅极绝缘层上方的第一栅电极。第一晶体管的第一源电极和第一漏电极之一和电容器的一个电极彼此电连接。

37. 发明申请

WO2011077916A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：WO2011077916A1
公开(公告)日：2011-06-30
申请号：PCT/JP2010/071522
申请日：2010-11-25
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , KOYAMA, Jun
发明人： KOYAMA, Jun
IPC分类号： G02F1/1368 , G02F1/133 , G09G3/20 , G09G3/36
CPC分类号： G02F1/136286 , G02F2001/13606 , H01L21/02414 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： To provide a display device which can realize multi-gray scale display by reducing voltage fluctuation of a pixel, a display device includes a plurality of source signal lines, a plurality of gate signal lines which is provided so as to intersect with the source signal lines, and a pixel electrode to which a signal voltage of the source signal line is applied through a transistor including an oxide semiconductor, which is provided near an intersection portion of the source signal line and the gate signal line; in which in the pixel electrode which is provided between a pair of the adjacent source signal lines, edge portions thereof overlap with edge portions of the source signal lines and an overlapped area with one of the source signal lines is substantially equal to an overlapped area with the other source signal line.
摘要翻译：为了提供一种能够通过减少像素的电压波动来实现多灰度显示的显示装置，显示装置包括多条源极信号线，多条栅极信号线被设置为与源极信号线以及像素电极，通过包括氧化物半导体的晶体管施加源极信号线的信号电压，所述晶体管设置在所述源极信号线和所述栅极信号线的交叉部附近; 其中，在设置在一对相邻源极信号线之间的像素电极中，其边缘部分与源极信号线的边缘部分重叠，并且与源极信号线之一的重叠区域基本上等于与其他源信号线。

38. 发明申请

WO2011074408A1 NON-VOLATILE LATCH CIRCUIT AND LOGIC CIRCUIT, AND SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：非挥发性锁存电路和逻辑电路，以及使用其的半导体器件
公开(公告)号：WO2011074408A1
公开(公告)日：2011-06-23
申请号：PCT/JP2010/071421
申请日：2010-11-24
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , KATO, Kiyoshi , KOYAMA, Jun
发明人： KATO, Kiyoshi , KOYAMA, Jun
IPC分类号： H03K3/356 , H01L27/10 , H01L29/786 , H03K3/037
CPC分类号： H03K19/1733 , G11C14/0063 , G11C16/02 , H01L21/8258 , H01L21/84 , H01L27/0688 , H01L27/088 , H01L27/1156 , H01L27/1203 , H01L27/1225 , H01L29/7869 , H03K3/356008 , H03K3/35606
摘要： A novel non-volatile latch circuit and a semiconductor device using the non-volatile latch circuit are provided. The latch circuit has a loop structure in which an output of a first element is electrically connected to an input of a second element and an output of the second element is electrically connected to an input of the first element through a second transistor. A transistor using an oxide semiconductor as a semiconductor material of a channel formation region is used as a switching element, and a capacitor is provided to be electrically connected to a source electrode or a drain electrode of the transistor, whereby data of the latch circuit can be retained, and a non-volatile latch circuit can thus be formed.
摘要翻译：提供了一种新颖的非易失性锁存电路和使用非易失性锁存电路的半导体器件。锁存电路具有环形结构，其中第一元件的输出电连接到第二元件的输入，并且第二元件的输出通过第二晶体管电连接到第一元件的输入端。使用使用氧化物半导体作为沟道形成区域的半导体材料的晶体管作为开关元件，并且提供电容器以电连接到晶体管的源电极或漏电极，由此锁存电路的数据可以并且可以形成非易失性锁存电路。

39. 发明申请

WO2011070905A1 NONVOLATILE LATCH CIRCUIT AND LOGIC CIRCUIT, AND SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：非线性锁存电路和逻辑电路以及使用其的半导体器件
公开(公告)号：WO2011070905A1
公开(公告)日：2011-06-16
申请号：PCT/JP2010/070753
申请日：2010-11-16
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , KATO, Kiyoshi , KOYAMA, Jun
发明人： KATO, Kiyoshi , KOYAMA, Jun
IPC分类号： H01L21/8242 , H01L21/8234 , H01L27/08 , H01L27/088 , H01L27/10 , H01L27/108 , H01L29/786
CPC分类号： H03K3/037 , G11C11/24 , G11C14/0054 , H01L27/0688 , H01L27/105 , H01L27/1207 , H01L27/1225 , H01L27/1255 , H01L29/045 , H01L29/7869 , H03K19/173
摘要： To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion configured to hold data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, a capacitor electrically connected to a source electrode or a drain electrode of the transistor is included.
摘要翻译：为了提供使用非易失性锁存电路的新型非易失性锁存电路和半导体器件，非易失性锁存电路包括具有环形结构的锁存部分，其中第一元件的输出电连接到第二元件的输入端，输出端的第二元件电连接到第一元件的输入端; 以及数据保持部，被配置为保持所述锁存部的数据。在数据保持部分中，使用使用氧化物半导体作为形成沟道形成区域的半导体材料的晶体管作为开关元件。此外，还包括与晶体管的源电极或漏电极电连接的电容器。

40. 发明申请

WO2011062068A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011062068A1
公开(公告)日：2011-05-26
申请号：PCT/JP2010/069652
申请日：2010-10-28
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
IPC分类号： H01L21/8242 , H01L21/8238 , H01L21/8247 , H01L27/08 , H01L27/092 , H01L27/108 , H01L27/115 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： H01L27/1203 , G11C11/403 , G11C11/405 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/8221 , H01L27/0688 , H01L27/105 , H01L27/1156 , H01L27/1225
摘要： It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring, a second wiring, a third wiring, a fourth wiring, a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, and a second transistor including a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided over a substrate including a semiconductor material, and the second transistor includes an oxide semiconductor layer.
摘要翻译：本发明的目的是提供一种具有新颖结构的半导体器件。半导体器件包括第一布线，第二布线，第三布线，第四布线，包括第一栅极，第一源极和第一漏极的第一晶体管，以及包括第二栅电极的第二晶体管，第二源电极和第二漏电极。第一晶体管设置在包括半导体材料的衬底上，并且第二晶体管包括氧化物半导体层。

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