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31. 发明申请

WO2020123063A1 SCAN AND CORRECTOR MAGNET DESIGNS FOR HIGH THROUGHPUT SCANNED BEAM ION IMPLANTER 审中-公开
公开(公告)号：WO2020123063A1
公开(公告)日：2020-06-18
申请号：PCT/US2019/060084
申请日：2019-11-06
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： EISNER, Edward , VANDERBERG, Bo
IPC分类号： H01J37/147 , H01J37/317
摘要： An ion implantation system and method provide a non-uniform flux of a ribbon ion beam, A spot ion beam is formed and provided to a scanner, and a scan waveform having a time-varying potential is applied to the scanner. The ion beam is scanned by the scanner across a scan path, generally defining a scanned ion beam comprised of a plurality of beamlets. The scanned beam is then passed through a corrector apparatus. The corrector apparatus is configured to direct the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece. The corrector apparatus further comprises a plurality of magnetic poles configured to provide a non-uniform flux profile of the scanned ion beam at the workpiece, wherein the non-uniform flux profile has a flux that substantially monotonically increases from a central region of the workpiece towards the edge of the workpiece in an ideal case of an ideal point ion beam being fully scanned over the workpiece at substantially constant speed.

32. 发明申请

WO2019005483A1 ION IMPLANT SYSTEM HAVING BEAM ANGLE CONTROL IN DRIFT AND DECELERATION MODES 审中-公开
公开(公告)号：WO2019005483A1
公开(公告)日：2019-01-03
申请号：PCT/US2018/037300
申请日：2018-06-13
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： VANDERBERG, Bo , EISNER, Edward
IPC分类号： H01J37/317 , H01J37/244 , H01J37/05
摘要： An ion implantation system has an ion source forming an ion beam. An mass analyzer defines and varies a mass analyzed beam along a beam path. A moveable mass resolving aperture assembly has a resolving aperture whose position is selectively varied in response to the variation of the beam path by the mass analyzer. A deflecting deceleration element positioned selectively deflects the beam path and selectively decelerate the mass analyzed beam. A controller selectively operates the ion implantation system in both a drift mode and decel mode. The controller passes the mass analyzed beam along a first path through the resolving aperture without deflection or deceleration in the drift mode and deflects and decelerates the beam along a second path in the decel mode. The position of the resolving aperture is selectively varied based on the variation in the beam path through the mass analyzer and the deflecting deceleration element.

33. 发明申请

WO2016106424A1 SYSTEMS AND METHODS FOR BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS WITH BEAM DECELERATION 审中-公开
标题翻译：用于光束衰减的离子植入物中光束角度调整的系统和方法
公开(公告)号：WO2016106424A1
公开(公告)日：2016-06-30
申请号：PCT/US2015/067728
申请日：2015-12-28
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： VANDERBERG, Bo , EISNER, Edward
IPC分类号： H01J37/317 , H01J37/147 , H01J37/05 , H01J37/09
CPC分类号： H01J37/1475 , H01J37/05 , H01J37/09 , H01J37/1478 , H01J37/3171 , H01J2237/0458 , H01J2237/057 , H01J2237/152 , H01J2237/24528 , H01J2237/30455 , H01J2237/30472 , H01J2237/31701
摘要： An ion implantation system (110) employs a mass analyzer (126) for both mass analysis and angle correction. An ion source generates an ion beam (124) along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture (134) within an aperture assembly (133) is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system (156) is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system (154) derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.
摘要翻译：离子注入系统（110）使用质量分析器（126）进行质量分析和角度校正。离子源沿着光束路径产生离子束（124）。质量分析仪位于离子源的下游，对离子束进行质量分析和角度校正。孔组件（133）内的分辨孔（134）位于质量分析器部件的下游并且沿着光束路径。分辨孔径根据所选质量分辨率和离子束的束包络具有尺寸和形状。角度测量系统（156）位于分辨孔径的下游，并获得离子束的入射角。控制系统（154）根据来自角度测量系统的离子束的入射角导出质量分析器的磁场调整。

34. 发明申请

WO2003015119A2 DECABORANE VAPORIZER HAVING IMPROVED VAPOR FLOW 审中-公开
标题翻译：具有改进蒸汽流量的DECABORANE VAPORIZER
公开(公告)号：WO2003015119A2
公开(公告)日：2003-02-20
申请号：PCT/US2002/025086
申请日：2002-08-07
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： PEREL, Alexander , VANDERBERG, Bo
IPC分类号： H01J27/00
CPC分类号： H01J27/08
摘要： An ion source for an ion implanter is provided, comprising: (i) a sublimator (52) having a cavity (66) for receiving a source material (68) to be sublimated and for sublimating the source material; (ii) a gas injector (104) for injecting gas into the cavity (66); (iii) an ionization chamber (58) for ionizing the sublimated source material, the ionization chamber located remotely from the sublimator; and (iv) a feed tube (62) for connecting the sublimator (52) to the ionization chamber (58). The gas injected into the cavity may be either helium or hydrogen, and is designed to improve the heat transferability between walls (64) of the sublimator (52) and the source material (68).
摘要翻译：提供了一种用于离子注入机的离子源，包括：（i）升华器（52），具有用于接收待升华的源材料并升华所述源材料的腔体（66）（ii）用于将气体注入到空腔（66）中的气体注入器（104）; （iii）电离室（58），用于使升华的源材料离子化，远离升华器的离子化室; 和（iv）用于将升华器（52）连接到电离室（58）的进料管（62）。注入空腔中的气体可以是氦气或氢气，并且被设计成改善升华器（52）的壁（64）和源材料（68）之间的热传递性。

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