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31. 发明申请

WO2015099892A1 EXTREME EDGE AND SKEW CONTROL IN ICP PLASMA REACTOR 审中-公开
标题翻译： ICP等离子体反应器中的极端边缘和轴流控制
公开(公告)号：WO2015099892A1
公开(公告)日：2015-07-02
申请号：PCT/US2014/064858
申请日：2014-11-10
申请人： APPLIED MATERIALS, INC.
发明人： BANNA, Samer , KNYAZIK, Vladimir , TANTIWONG, Kyle
IPC分类号： H01L21/02
CPC分类号： H05H1/24 , H01J37/321 , H01J37/32174 , H01J37/32642 , H01J37/32697 , H01L21/6875
摘要： Embodiments of the present disclosure provide apparatus and methods for improving plasma uniformity around edge regions and/or reducing non-symmetry in a plasma processing chamber. One embodiment of the present disclosure provides a plasma tuning assembly having one or more conductive bodies disposed around an edge region of a substrate support in a plasma processing chamber. The one or more conductive bodies are isolated from other chamber components and electrically floating in the processing chamber near the edge region without connecting to active electrical potentials. During operation, when a plasma is maintained in the plasma processing chamber, the presence of the one or more conductive bodies affects the plasma distribution near the one or more conductive bodies.
摘要翻译：本公开的实施例提供了用于改善边缘区域周围的等离子体均匀性和/或降低等离子体处理室中的非对称性的装置和方法。本公开的一个实施例提供了一种等离子体调谐组件，其具有设置在等离子体处理室中的衬底支撑件的边缘区域周围的一个或多个导电体。一个或多个导电体与其它腔室部件隔离，并且在边缘区域附近电处理室中电浮动，而不连接到有源电位。在操作期间，当等离子体保持在等离子体处理室中时，一个或多个导电体的存在影响一个或多个导电体附近的等离子体分布。

32. 发明申请

WO2015050782A1 MULTIPLE ZONE COIL ANTENNA WITH PLURAL RADIAL LOBES 审中-公开
标题翻译：多个区域线圈天线与多个径向离子
公开(公告)号：WO2015050782A1
公开(公告)日：2015-04-09
申请号：PCT/US2014/057635
申请日：2014-09-26
申请人： APPLIED MATERIALS, INC.
发明人： KNYAZIK, Vladimir , BANNA, Samer , TANTIWONG, Kyle, R.
IPC分类号： H05H1/46 , H01Q11/08
CPC分类号： H01J37/3211
摘要： A low inductance coil antenna for a plasma reactor has multiple radial zones of plural conductor lobes extending radially from respective RF supply and ground rings.
摘要翻译：用于等离子体反应器的低电感线圈天线具有从相应的RF电源和接地环径向延伸的多个导体突起的多个径向区域。

33. 发明申请

WO2015034736A1 POWER DEPOSITION CONTROL IN INDUCTIVELY COUPLED PLASMA (ICP) REACTORS 审中-公开
标题翻译：感应耦合等离子体（ICP）反应器中的功率沉积控制
公开(公告)号：WO2015034736A1
公开(公告)日：2015-03-12
申请号：PCT/US2014/053077
申请日：2014-08-28
申请人： APPLIED MATERIALS, INC.
发明人： BANNA, Samer , GUNG, Tza-Jing , KNYAZIK, Vladimir , TANTIWONG, Kyle , MAROHL, Dan A. , TODOROW, Valentin N. , YUEN, Stephen
IPC分类号： H05H1/24 , H05H1/34 , H05H1/46
CPC分类号： H01J37/32119 , H01J37/321 , H01J37/3211
摘要： Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; and one or more inductive coils disposed above the lid to inductively couple RF energy into and to form a plasma in the processing volume above a substrate support disposed within the processing volume; wherein the lid is a dielectric window comprising a first side and an opposing second side that faces the processing volume, and wherein the lid has a dielectric coefficient that spatially varies to provide a varied power coupling of RF energy from the one or more inductive coils to the processing volume.
摘要翻译：本文提供电感耦合等离子体（ICP）反应器的实施例。在一些实施例中，用于电感耦合等离子体反应器的电介质窗包括：主体，包括第一侧，与第一侧相对的第二侧，边缘和中心，其中介电窗口具有在空间上变化的介电系数。在一些实施例中，用于处理衬底的装置包括：处理室，其具有设置在处理室的盖下方的处理容积; 以及设置在所述盖上方的一个或多个感应线圈，以将RF能量感应耦合并在处理体积中形成等离子体，所述等离子体位于设置在所述处理容积内的衬底支撑件上方; 其中所述盖是包括面向所述处理体积的第一侧和相对的第二侧的电介质窗，并且其中所述盖具有空间变化的介电系数，以提供来自所述一个或多个感应线圈的RF能量与所述一个或多个感应线圈的变化的功率耦合处理量。

34. 发明申请

WO2014130230A1 TUNABLE GAS DELIVERY ASSEMBLY WITH INTERNAL DIFFUSER AND ANGULAR INJECTION 审中-公开
标题翻译：具有内部扩散器和角度注射的气体输送装置
公开(公告)号：WO2014130230A1
公开(公告)日：2014-08-28
申请号：PCT/US2014/014455
申请日：2014-02-03
申请人： APPLIED MATERIALS, INC.
发明人： KNYAZIK, Vladimir , TANTIWONG, Kyle , BANNA, Samer , BISHARA, Waheb
IPC分类号： H01L21/02
CPC分类号： H01J37/32449 , F26B21/004 , H01J37/3244
摘要： Embodiments of the present invention relate to an apparatus for providing processing gases to a process chamber with improved uniformity. One embodiment of the present invention provides a gas delivery assembly. The gas delivery assembly includes a hub, a nozzle, and one or more gas diffusers disposed in the nozzle. The nozzle has a cylindrical body with a side wall and a top surface. A plurality of injection passages are formed inside the nozzle to deliver processing gases into the process chamber via a plurality of outlets disposed in the side wall. The injection passages are configured to direct process gases out of each outlet disposed in the side wall in a direction which is not radially aligned with a centerline of the hub.
摘要翻译：本发明的实施例涉及一种用于向处理室提供具有改进的均匀性的处理气体的装置。本发明的一个实施例提供一种气体输送组件。气体输送组件包括轮毂，喷嘴和设置在喷嘴中的一个或多个气体扩散器。喷嘴具有带有侧壁和顶面的圆柱体。在喷嘴内部形成多个喷射通道，通过设置在侧壁中的多个出口将处理气体输送到处理室中。喷射通道构造成将处理气体从设置在侧壁中的每个出口沿着不与轮毂的中心线径向对准的方向引导。

35. 发明申请

WO2013089911A1 PROCESS KIT COMPONENTS FOR USE WITH AN EXTENDED AND INDEPENDENT RF POWERED CATHODE SUBSTRATE FOR EXTREME EDGE TUNABILITY 审中-公开
标题翻译：使用具有扩展和独立射频功率的CATHODE基板进行极端边缘能力的工艺套件组件
公开(公告)号：WO2013089911A1
公开(公告)日：2013-06-20
申请号：PCT/US2012/060315
申请日：2012-10-15
申请人： APPLIED MATERIALS, INC.
发明人： TODOROW, Valentin N. , BANNA, Samer , YOUSIF, Imad , WANG, Albert , LERAY, Gary
IPC分类号： H05H1/34 , H05H1/46 , H01L21/3065
CPC分类号： H01L21/6833 , H01J37/32642 , H01J37/32715 , H01L21/6831 , H02N13/00 , Y10T279/23
摘要： Process kit components for use with a substrate support of a process chamber are provided herein. In some embodiments, a process kit ring may include a ring shaped body having an outer edge, an inner edge, a top surface and a bottom, wherein the outer edge has a diameter of about 12.473 inches to about 12.479 inches and the inner edge has a diameter of about 11.726 inches to about 11.728 inches, and wherein the ring shaped body has a height of about 0.116 to about 0.118 inches; and a plurality of protrusions disposed on the top surface of the ring shaped body, each of the plurality of protrusions disposed symmetrically about the ring shaped body.
摘要翻译：本文提供了与处理室的基板支撑件一起使用的工艺套件组件。在一些实施例中，处理套件环可以包括具有外边缘，内边缘，顶表面和底部的环形主体，其中外边缘具有约12.473英寸至约12.479英寸的直径，并且内边缘具有约11.726英寸至约11.728英寸的直径，并且其中所述环形体具有约0.116至约0.118英寸的高度; 以及设置在所述环形体的上表面上的多个突起，所述多个突起中的每一个围绕所述环形体对称设置。

36. 发明申请

WO2013062929A1 HIGH EFFICIENCY TRIPLE-COIL INDUCTIVELY COUPLED PLASMA SOURCE WITH PHASE CONTROL 审中-公开
标题翻译：高效率三线圈电感耦合等离子体源相控
公开(公告)号：WO2013062929A1
公开(公告)日：2013-05-02
申请号：PCT/US2012/061410
申请日：2012-10-23
申请人： APPLIED MATERIALS, INC.
发明人： BANNA, Samer , BISHARA, Waheb , GIAR, Ryan , TODOROW, Valentin , LUBOMIRSKY, Dmitry , TANTIWONG, Kyle
IPC分类号： H05H1/46 , H01F38/14 , H01L21/3065
CPC分类号： H05H1/46 , H05H2001/4667
摘要： A plasma processing apparatus may include a process chamber having an interior processing volume, first, second and third RF coils disposed proximate the process chamber to couple RF energy into the processing volume, wherein the second RF coil disposed coaxially with respect to the first RF coil, and wherein the third RF coil disposed coaxially with respect to the first and second RF coils, at least one ferrite shield disposed proximate to at least one of the first, second or third RF coils, wherein the ferrite shield is configured to locally guide a magnetic field produced by an RF current flow through the first, second or third RF coils toward the process chamber, wherein the plasma processing apparatus is configured to control a phase of each RF current flow through each of the of the first, second or third RF coils.
摘要翻译：等离子体处理装置可以包括具有内部处理体积的处理室，设置在处理室附近的第一，第二和第三RF线圈，以将RF能量耦合到处理容积中，其中相对于第一RF线圈同轴设置的第二RF线圈，并且其中所述第三RF线圈相对于所述第一和第二RF线圈同轴设置，至少一个铁氧体屏蔽件设置在所述第一，第二或第三RF线圈中的至少一个附近，其中所述铁氧体屏蔽件被配置为局部引导由RF电流产生的磁场通过第一，第二或第三RF线圈流向处理室，其中等离子体处理装置被配置为控制通过第一，第二或第三RF中的每一个的每个RF电流的相位线圈。

37. 发明申请

WO2009140371A3 METHOD AND APPARATUS FOR PULSED PLASMA PROCESSING USING A TIME RESOLVED TUNING SCHEME FOR RF POWER DELIVERY 审中-公开
公开(公告)号：WO2009140371A3
公开(公告)日：2009-11-19
申请号：PCT/US2009/043771
申请日：2009-05-13
申请人： APPLIED MATERIALS, INC. , BANNA, Samer , TODOROW, Valentin , RAMASWAMY, Kartik
发明人： BANNA, Samer , TODOROW, Valentin , RAMASWAMY, Kartik
IPC分类号： H05H1/36 , H01L21/3065
摘要： Embodiments of the present invention generally provide methods and apparatus for pulsed plasma processing over a wide process window. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply and a common controller for tuning each of the RF power supply and the matching network.

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