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21. 发明申请

WO2007002151A2 PACKAGING TECHNIQUE FOR THE FABRICATION OF POLARIZED LIGHT EMITTING DIODES 审中-公开
标题翻译：用于制造极化发光二极管的包装技术
公开(公告)号：WO2007002151A2
公开(公告)日：2007-01-04
申请号：PCT/US2006024078
申请日：2006-06-21
申请人： UNIV CALIFORNIA , MASUI HISASHI , NAKAMURA SHUJI , DENBAARS STEVEN P
发明人： MASUI HISASHI , NAKAMURA SHUJI , DENBAARS STEVEN P
IPC分类号： H01L33/16 , H01L33/20 , H01L33/48
CPC分类号： H01L33/16 , G02F1/133603 , G02F1/13362 , H01L23/544 , H01L33/20 , H01L33/483 , H01L2223/54426 , H01L2223/54473 , H01L2223/54486 , H01L2924/0002 , H01L2924/00
摘要： A polarized light emitting diode (LED) includes a marker indicating a polarization direction. A package for the LED also includes a marker indicating the polarization direction. The markers on the LED and package are used for mutual alignment, wherein the LED is attached in a favorable orientation with respect to a package, so that the polarization direction of emitted light from the package is apparent. The marker is placed on the LED before die separation and the marker is placed on the package before alignment. The marker on the LED comprises a photolithographic pattern, an asymmetric die shape, a notch on the die, or a scratch on the die, while the marker on the package comprises an electrode shape or pattern, an asymmetric package shape, a notch on the package, or a scratch on the package. Finally, the LED or package may be installed in an external circuit or system that also indicates the polarization direction.
摘要翻译：偏振发光二极管（LED）包括指示极化方向的标记。用于LED的封装还包括指示极化方向的标记。 LED和封装上的标记用于相互对准，其中LED以相对于封装的有利取向附接，使得来自封装的发射光的偏振方向是显而易见的。标记物在芯片分离之前放置在LED上，并且在对准之前将标记物放置在包装上。 LED上的标记包括光刻图案，不对称模具形状，裸片上的凹口或裸片上的划痕，而封装上的标记包括电极形状或图案，非对称封装形状，包装或包装上的划痕。最后，LED或封装可以安装在也指示极化方向的外部电路或系统中。

22. 发明申请

WO2007095137A8 METHOD FOR CONDUCTIVITY CONTROL OF (AL,IN,GA,B)N 审中-公开
标题翻译：（AL，IN，GA，B）电导率控制方法N
公开(公告)号：WO2007095137A8
公开(公告)日：2008-09-18
申请号：PCT/US2007003607
申请日：2007-02-09
申请人： UNIV CALIFORNIA , KAEDING JOHN F , SATO HITOSHI , IZA MICHAEL , ASAMIZU HIROKUNI , ZHONG HONG , DENBAARS STEVEN P , NAKAMURA SHUJI
发明人： KAEDING JOHN F , SATO HITOSHI , IZA MICHAEL , ASAMIZU HIROKUNI , ZHONG HONG , DENBAARS STEVEN P , NAKAMURA SHUJI
IPC分类号： H01L21/04 , H01L29/15
CPC分类号： H01L21/2654 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/207
摘要： A method of controlled p-type conductivity in (Al, In, Ga, B)N semiconductor crystals. Examples include { 1011 } GaN films deposited on {100} MgAl 2 O 4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
摘要翻译：（Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。实例包括在{011}方向沉积在{100} MgAl 2 O 4 S 4尖晶石衬底上的{1011} GaN膜。可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。

23. 发明申请

WO2008021403A3 METHOD FOR DEPOSITION OF MAGNESIUM DOPED (AL, IN, GA, B)N LAYERS 审中-公开
标题翻译：沉积镁掺杂（AL，IN，GA，B）N层的方法
公开(公告)号：WO2008021403A3
公开(公告)日：2008-04-10
申请号：PCT/US2007018074
申请日：2007-08-16
申请人： UNIV CALIFORNIA , IZA MICHAEL , SATO HITOSHI , DENBAARS STEVEN P , NAKAMURA SHUJI
发明人： IZA MICHAEL , SATO HITOSHI , DENBAARS STEVEN P , NAKAMURA SHUJI
IPC分类号： H01L21/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L33/007
摘要： A method for growing an improved quality device by depositing a low temperature (LT) magnesium (Mg) doped nitride semiconductor thin film. The low temperature Mg doped nitride semiconductor thin film may have a thickness greater than 50nm. A multi quantum well (MQW) active layer may be grown at a growth temperature and the LT Mg doped nitride semiconductor thin film may deposited on the MQW active layer at a substrate temperature no greater than 150 °C above the growth temperature.
摘要翻译：一种通过沉积低温（LT）镁（Mg）掺杂的氮化物半导体薄膜来生长改善质量的器件的方法。低温掺杂Mg的氮化物半导体薄膜可以具有大于50nm的厚度。可以在生长温度下生长多量子阱（MQW）有源层，并且可以在不高于生长温度150℃的衬底温度下将LT Mg掺杂的氮化物半导体薄膜沉积在MQW有源层上。

24. 发明申请

WO2008060586A3 TEXTURED PHOSPHOR CONVERSION LAYER LIGHT EMITTING DIODE 审中-公开
公开(公告)号：WO2008060586A3
公开(公告)日：2008-10-09
申请号：PCT/US2007023972
申请日：2007-11-15
申请人： UNIV CALIFORNIA , FELLOWS NATALIE N , DENBAARS STEVEN P , NAKAMURA SHUJI
发明人： FELLOWS NATALIE N , DENBAARS STEVEN P , NAKAMURA SHUJI
IPC分类号： H01S5/00 , H01L33/22 , H01L33/44 , H01L33/50 , H01L33/58
CPC分类号： H01L33/22 , H01L33/0075 , H01L33/06 , H01L33/145 , H01L33/32 , H01L33/44 , H01L33/502 , H01L33/505 , H01L33/507 , H01L33/508 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2933/0041 , H01L2933/0058 , H01L2933/0066 , H01L2933/0091 , H01L2924/00014 , H01L2924/00012
摘要： This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (A1, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (A1, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

25. 发明申请

WO2008060585A2 STANDING TRANSPARENT MIRRORLESS LIGHT EMITTING DIODE 审中-公开
标题翻译：标准透明无光发光二极管
公开(公告)号：WO2008060585A2
公开(公告)日：2008-05-22
申请号：PCT/US2007023970
申请日：2007-11-15
申请人： UNIV CALIFORNIA , NAKAMURA SHUJI , DENBAARS STEVEN P
发明人： NAKAMURA SHUJI , DENBAARS STEVEN P
IPC分类号： H01L21/00 , H01L33/54 , H01L33/60 , H01L33/62
CPC分类号： H01L33/54 , H01L33/507 , H01L33/60 , H01L33/62 , H01L2224/05568 , H01L2224/05573 , H01L2224/16245 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/00014 , H01L2924/181 , H01L2933/0091 , H01L2224/48091 , H01L2924/00012 , H01L2224/05599
摘要： An (A1, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (A1, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element comprising an epoxy, glass, silicon or other material molded into an inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. In addition, the present invention stands the LED on end, i.e., rotates the position of the LED within the shaped optical element by approximately 90° as compared to a conventional LED, in order to extract light more effectively from the LED. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e., creating microcones) may also assist in light extraction, as well as minimizing internal reflections.
摘要翻译：一种（A1，Ga，In）N发光二极管（LED），其中可以在进入成形光学元件之后随后将其提取到空气中，从LED的一个或多个表面提取多方向光。特别地，（A1，Ga，In）N和透明接触层（例如ITO或ZnO）嵌入或者与包含模制成倒圆锥形的环氧树脂，玻璃，硅或其它材料的成形光学元件组合，其中进入倒锥体的大部分光线处于临界角内并被提取。此外，为了从LED更有效地提取光，本发明将LED结束，即将LED在成形光学元件内的位置与常规LED相比旋转大约90°。本发明还通过消除反射镜和/或镜像表面来最小化LED内部的内部反射，以便通过LED的发射层（或有源层）使LED的光的再吸收最小化。为了帮助最小化内部反射，可以使用透明电极，例如ITO或ZnO。通过图案化或各向异性蚀刻（即，制造微孔）的表面粗糙化也可以有助于光提取，以及最小化内部反射。

26. 发明申请

WO2006036446A3 WHITE, SINGLE OR MULTI-COLOR LIGHT EMITTING DIODES BY RECYCLING GUIDED MODES 审中-公开
标题翻译：白色，单色或多色发光二极管循环引导模式
公开(公告)号：WO2006036446A3
公开(公告)日：2008-01-03
申请号：PCT/US2005031118
申请日：2005-08-30
申请人： UNIV CALIFORNIA , BENISTY HENRI , SCHWACH CAROLE , WEISBUCH CLAUDE C A , DENBAARS STEVEN P , NAKAMURA SHUJI
发明人： BENISTY HENRI , SCHWACH CAROLE , WEISBUCH CLAUDE C A , DENBAARS STEVEN P , NAKAMURA SHUJI
IPC分类号： H01L27/15 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/40 , H01L33/50
CPC分类号： H01L33/08 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/405 , H01L33/505
摘要： A white, single or multi-color light emitting diode (LED) includes a mirror for reflecting photons within the LED; a first active region, adjacent the mirror, including one or more current-injected layers for emitting photons when electrically biased in a forward direction; a second active region, adjacent the first active region, including one or more optically-pumped layers for emitting photons, wherein the optically pumped layers are optically excited by the photons emitted by the current-injected layers, thereby recycling guided modes; and an output interface, adjacent the second active region, for allowing the photons emitted by the optically-pumped layers to escape the LED as emitted light.
摘要翻译：白色，单色或多色发光二极管（LED）包括用于反射LED内的光子的反射镜; 邻近反射镜的第一有源区，包括一个或多个电流注入层，用于在向前方向上电偏置时发射光子; 第二有源区，邻近第一有源区，包括一个或多个用于发射光子的光泵浦层，其中光泵浦层被电流注入层发射的光子激发，从而循环引导模式; 以及与第二有源区相邻的输出接口，用于允许由光泵浦层发射的光子作为发射光而逸出LED。

27. 发明申请

WO2007098215A8 METHOD FOR GROWTH OF SEMIPOLAR (AL,IN,GA,B)N OPTOELECTRONIC DEVICES 审中-公开
标题翻译：半导体（AL，IN，GA，B）N光电子器件生长方法
公开(公告)号：WO2007098215A8
公开(公告)日：2007-11-08
申请号：PCT/US2007004533
申请日：2007-02-20
申请人： UNIV CALIFORNIA , ZHONG HONG , KAEDING JOHN FRANCIS , SHARMA RAJAT , SPECK JAMES STEPHEN , DENBAARS STEVEN P , NAKAMURA SHUJI
发明人： ZHONG HONG , KAEDING JOHN FRANCIS , SHARMA RAJAT , SPECK JAMES STEPHEN , DENBAARS STEVEN P , NAKAMURA SHUJI
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L31/0236 , C30B25/186 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02647 , H01L21/02658 , H01L29/2003 , H01L29/778 , H01L31/18 , H01L33/0075 , Y02E10/50
摘要： A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.
摘要翻译：一种制造光电子器件的方法，包括在合适材料的倾斜表面上生长所述器件的有源层，其中所述倾斜表面包括多面表面。本发明还公开了一种制造小刻面的方法。一种制造工艺包括在合适的材料上生长外延层，通过掩模蚀刻外延层以形成具有特定晶体取向的小平面，以及在小平面上沉积一个或多个有源层。另一种方法包括使用横向过生长技术生长材料层以产生刻面表面，并在刻面表面上沉积一个或多个有源层。刻面表面通常是半极性平面。

28. 发明申请

WO2007030709A2 METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al, In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：用于增强半极性（Al，In，Ga，B）N生长的方法通过金属化学气相沉积
公开(公告)号：WO2007030709A2
公开(公告)日：2007-03-15
申请号：PCT/US2006035012
申请日：2006-09-08
申请人： UNIV CALIFORNIA , JAPAN SCIENCE & TECH AGENCY , IZA MICHAEL , BAKER TROY J , HASKELL BENJAMIN A , DENBAARS STEVEN P , NAKAMURA SHUJI
发明人： IZA MICHAEL , BAKER TROY J , HASKELL BENJAMIN A , DENBAARS STEVEN P , NAKAMURA SHUJI
IPC分类号： H01L21/44
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02581 , H01L21/02609 , H01L21/02647
摘要： A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.
摘要翻译：一种通过金属有机化学气相沉积（MOCVD）在衬底上生长半极性氮化物半导体薄膜的方法，其中在半极性氮化物半导体薄膜生长之前，在衬底上生长氮化物成核或缓冲层。

29. 发明申请

WO2007025122A2 SEMICONDUCTOR MICRO-CAVITY LIGHT EMITTING DIODE 审中-公开
标题翻译：半导体微腔发光二极管
公开(公告)号：WO2007025122A2
公开(公告)日：2007-03-01
申请号：PCT/US2006033212
申请日：2006-08-25
申请人： UNIV CALIFORNIA , PATTISON MORGAN P , SHARMA RAJAT , DENBAARS STEVEN P , NAKAMURA SHUJI
发明人： PATTISON MORGAN P , SHARMA RAJAT , DENBAARS STEVEN P , NAKAMURA SHUJI
IPC分类号： H01L29/22 , H01L33/00 , H01L33/14 , H01L33/32 , H01L33/40 , H01L33/46
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/145 , H01L33/32 , H01L33/405
摘要： A spontaneously light emitting nitride-based active region placed within a micro-cavity bounded by a first mirror and a second mirror, wherein the micro-cavity has been thinned to a resonant thickness within a micro-cavity regime.
摘要翻译：自发光发射氮化物基有源区，放置在由第一反射镜和第二反射镜界定的微腔内，其中微腔已经被减薄到微腔体系内的谐振厚度。

30. 发明申请

WO2008060584A3 HIGH LIGHT EXTRACTION EFFICIENCY SPHERE LED 审中-公开
标题翻译：高光提取效率球泡灯
公开(公告)号：WO2008060584A3
公开(公告)日：2008-07-31
申请号：PCT/US2007023968
申请日：2007-11-15
申请人： UNIV CALIFORNIA , JAPAN SCIENCE & TECH AGENCY , DENBAARS STEVEN P , NAKAMURA SHUJI , MASUI HISASHI
发明人： DENBAARS STEVEN P , NAKAMURA SHUJI , MASUI HISASHI
IPC分类号： H01L33/22 , H01L33/44 , H01L33/48 , H01L33/54
CPC分类号： H01L33/483 , H01L33/22 , H01L33/44 , H01L33/54 , H01L2224/16245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01L2933/0091 , H01L2924/00012 , H01L2924/00014
摘要： This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (A1, Ga, In)N combined with optimized optics for highly efficient (A1, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a sphere shaped molding.
摘要翻译：本发明涉及用于光电应用的LED灯提取。更具体地，本发明涉及与用于高效（A1，Ga，In）N的发光二极管应用的优化光学器件的（A1，Ga，In）N及其制造方法。进一步的扩展是与球形成型组合的成形高折射率光提取材料的一般组合。

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