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    • 22. 发明申请
    • METHOD AND APPARATUS FOR PROTECTION OF DATA CENTER IDENTIFIABLE INFORMATION
    • 保护数据中心可识别信息的方法和设备
    • WO2017200600A1
    • 2017-11-23
    • PCT/US2017/000034
    • 2017-05-18
    • CHERRY, MichaelKENNEDY, JosephSCHENK, ManfredSWITZER, Mark
    • CHERRY, MichaelKENNEDY, JosephSCHENK, ManfredSWITZER, Mark
    • G06F11/30
    • G06F21/6254
    • A method and apparatus useful to sequester sensitive identifiable data from the data associated therewith and store this sensitive data in a shielded limited access structure (LAS) while the associated data is periodically processed in a data center while concurrently scanned for potential malware/ransomware script (212). Once thus cleaned the data processed in the data center (DC) is then converted to a read only form and as thus converted brought to the limited access structure (LAS) where it is screened once again for script tags and if none are found is then merged with the corresponding identifiable data to be printed and mailed. This repeated screening pass together with the periodic nature of the data center's operations combine to minimize all potential exposure to unwanted data contamination while the secured nature of the limited access structure can be used for secure long term storage.
    • 用于从与其相关联的数据中隔离敏感可识别数据并将该敏感数据存储在屏蔽受限访问结构(LAS)中的方法和设备,同时相关数据在数据中心中被周期性地处理,同时 扫描潜在的恶意软件/勒索软件脚本(212)。 一旦如此清理,在数据中心(DC)中处理的数据然后被转换为只读形式,并且因此被转换成有限访问结构(LAS),在那里再次对脚本标签进行筛选,并且如果没有找到,那么 与相应的可识别数据合并打印并邮寄。 这种重复的筛选和数据中心运营的周期性结合起来,最大限度地减少了所有可能出现的不必要的数据污染,同时有限的访问结构的安全特性可以用于安全的长期存储。
    • 28. 发明申请
    • COMPOSITIONS, LAYERS AND FILMS FOR OPTOELECTRONIC DEVICES, METHODS OF PRODUCTION AND USES THEREOF
    • 光电器件的组合物,层和膜,其生产方法及其用途
    • WO2008124711A1
    • 2008-10-16
    • PCT/US2008/059612
    • 2008-04-08
    • HONEYWELL INTERNATIONAL INC.KRISHNAMOORTHY, AhilaKENNEDY, JosephSPEAR, RichardYELLOWAGA, DeborahSMITH, PeterPALMER, BenKATSANES, RonaldTUCKER, MichaelGEBREBRHAN, Amanuel
    • KRISHNAMOORTHY, AhilaKENNEDY, JosephSPEAR, RichardYELLOWAGA, DeborahSMITH, PeterPALMER, BenKATSANES, RonaldTUCKER, MichaelGEBREBRHAN, Amanuel
    • C08G77/14H01L21/31
    • H01L51/5262C08G77/70C09D183/04H01L21/02126H01L21/02137H01L21/02216H01L21/02282H01L21/3122
    • Crosslinkable compositions are disclosed herein that comprise at least one silicon-based material comprising at least one alkyl group and at least one aryl or aromatic group, at least one catalyst, and at least one solvent. Optoelectronic devices are described that include: a) a surface within the device, and b) at least one sufficiently light-transmissive crosslinked film, wherein the film is formed from at least one silicon-based material, at least one catalyst, and at least one solvent. Optoelectronic device (105) are also disclosed, which include: a) a surface within the device (120), and b) at least one light-transmissive crosslinkable composition (140), wherein the composition comprises at least one silicon-based material, at least one crosslinking agent and at least one solvent. Methods of producing optoelectronic devices (105) are also disclosed that include: a) providing a surface (120), b) providing at least one sufficiently light-transmissive crosslinkable composition (140), wherein the composition comprises at least one silicon-based material and at least one catalyst, c) applying the crosslinkable material to the surface, and d) curing the crosslinkable material to form a sufficiently light-transmissive crosslinked composition. Crosslinkable compositions are disclosed that comprise: polyphenylsilsesquioxane, polyphenylsiloxane or a combination thereof, tetramethylammonium nitrate, at least one solvent, and an aminopropyl triethoxysilane-based compound.
    • 本文公开的可交联组合物包含至少一种包含至少一个烷基和至少一个芳基或芳族基团的硅基材料,至少一种催化剂和至少一种溶剂。 描述了光电器件,其包括:a)器件内的表面,以及b)至少一个足够透光的交联膜,其中所述膜由至少一种硅基材料,至少一种催化剂形成,并且至少 一种溶剂。 还公开了光电子器件(105),其包括:a)器件(120)内的表面,和b)至少一种透光性可交联组合物(140),其中所述组合物包含至少一种硅基材料, 至少一种交联剂和至少一种溶剂。 还公开了制造光电器件(105)的方法,其包括:a)提供表面(120),b)提供至少一种足够透光的可交联组合物(140),其中所述组合物包含至少一种硅基材料 和至少一种催化剂,c)将所述可交联材料施加到所述表面,以及d)固化所述可交联材料以形成足够透光的交联组合物。 公开了可交联组合物,其包含:聚苯基倍半硅氧烷,聚苯基硅氧烷或其组合,四甲基硝酸铵,至少一种溶剂和氨基丙基三乙氧基硅烷基化合物。
    • 29. 发明申请
    • ANTIREFLECTIVE COATINGS FOR VIA FILL AND PHOTOLITHOGRAPHY APPLICATIONS AND METHODS OF PREPARATION THEREOF
    • 用于通过薄膜和光刻机应用的抗反射涂层及其制备方法
    • WO2005049681A2
    • 2005-06-02
    • PCT/US2004/038517
    • 2004-11-17
    • HONEYWELL INTERNATIONAL INC.LI, BoKENNEDY, JosephIWAMOTO, NancyLU, VictorLEUNG, RogerFRADKIN, Mark, A.HUSSEIN, Makarem, A.GOODNER, Michael, D.
    • LI, BoKENNEDY, JosephIWAMOTO, NancyLU, VictorLEUNG, RogerFRADKIN, Mark, A.HUSSEIN, Makarem, A.GOODNER, Michael, D.
    • C08G
    • C09D183/04C09D183/08G03F7/0751G03F7/0752G03F7/091
    • An absorbing composition is described herein that includes at least one inorganic­based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.
    • 本文描述的吸收组合物包括至少一种无机基化合物,至少一种吸收化合物和至少一种材料改性剂。 此外,还描述了制备吸收组合物的方法,其包括:a)将至少一种无机基化合物,至少一种吸收化合物,至少一种材料改性剂,酸/水混合物和一种或多种溶剂 形成反应混合物; 和b)使反应混合物在室温下形成吸收组合物。 制备吸收组合物的另一种方法包括:a)将至少一种无机基化合物,至少一种吸收化合物,至少一种材料改性剂,酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b)加热反应混合物以形成吸收组合物。 描述了制备吸收组合物的另一种方法,其包括:a)将至少一种无机基化合物,至少一种吸收化合物,至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物,其中 至少一种材料改性剂包含至少一种酸和水; 和b)加热反应混合物以形成吸收材料,涂层或膜。 在制备本文所述的吸收组合物的其它方法中,这些方法包括:a)将至少一种无机基化合物,至少一种吸收化合物,至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物, 其中所述至少一种材料改性剂包含至少一种酸和水; 和b)使反应混合物形成吸收材料,涂层或膜。
    • 30. 发明申请
    • SPIN-ON ANTI-REFLECTIVE COATINGS FOR PHOTOLITHOGRAPHY
    • 用于光刻胶的旋转抗反射涂层
    • WO2003044600A1
    • 2003-05-30
    • PCT/US2001/045306
    • 2001-11-15
    • HONEYWELL INTERNATIONAL INC.BALDWIN, TeresaKENNEDY, Joseph
    • BALDWIN, TeresaKENNEDY, Joseph
    • G03C1/492
    • G03F7/091C08G77/04C09D5/006C09D183/04Y10T428/31663
    • Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compounds and at least one pH tuning agent that are incorporated into spin-on materials. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. Suitable pH tuning agents not only adjust the pH of the final spin-on composition, but also influence the chemical performance and characteristics, mechanical performance and structural makeup of the final spin-on composition that is part of the layered material, electronic component or semiconductor component, such that the final spin-on composition is more compatible with the resist material that is coupled to it. More specifically, the pH tuning agent strong influences the polymeric characteristics, the structural makeup and the spatial orientation that results in increasing the surface properties of the anti-reflective coating for optimal resist performance. In other words, a pH tuning agent that merely adjusts the pH of the spin-on material without influencing the mechanical properties and structural makeup of the spin-on composition or the coupled resist material is not contemplated herein. A method of making absorbing and pH tuned spin-on materials includes combining at least one organic absorbing compound and at least one pH tuning agent with at least one silane reactant during synthesis of the spin-on materials and compositions.
    • 用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种掺入旋涂材料中的pH调节剂。 合适的吸收化合物是可以在光刻中使用的波长如365nm,248nm,193nm和157nm的那些吸收化合物。 合适的pH调节剂不仅调节最终旋涂组合物的pH,而且还影响作为层状材料,电子部件或半导体的一部分的最终旋涂组合物的化学性能和特性,机械性能和结构组成 使得最终的旋涂组合物与与其偶联的抗蚀剂材料更相容。 更具体地,pH调节剂强烈影响聚合物特性,结构组成和空间取向,导致抗反射涂层的表面性质增加,以获得最佳抗蚀剂性能。 换句话说,仅调节旋涂材料的pH而不影响旋涂组合物或偶联的抗蚀剂材料的机械性能和结构组成的pH调节剂在本文中未考虑。 制备吸收和pH调节旋涂材料的方法包括在合成旋涂材料和组合物期间将至少一种有机吸收化合物和至少一种pH调节剂与至少一种硅烷反应物组合。