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    • 25. 发明申请
    • SPUTTER DEPOSITION SOURCE, SPUTTER DEPOSITION APPARATUS AND METHOD OF OPERATING A SPUTTER DEPOSITION SOURCE
    • 溅射沉积源,溅射沉积装置和操作溅射沉积源的方法
    • WO2018010770A1
    • 2018-01-18
    • PCT/EP2016/066551
    • 2016-07-12
    • APPLIED MATERIALS, INC.LINDENBERG, RalphBUSCHBECK, WolfgangLOPP, Andreas
    • LINDENBERG, RalphBUSCHBECK, WolfgangLOPP, Andreas
    • H01J37/34
    • According to one aspect of the present disclosure, a sputter deposition source (100) with at least one electrode assembly (120) configured for two-side sputter deposition is provided. The electrode assembly (120) comprises: a cathode (125) for providing a target material to be deposited, wherein the cathode is configured for generating a first plasma (131) on a first deposition side (10) and a second plasma (141) on a second deposition side (11) opposite to the first deposition side (10); and an anode assembly (130) with at least one first anode (132) arranged on the first deposition side (10) for influencing the first plasma and at least one second anode (142) arranged on the second deposition side (11) for influencing the second plasma. According to a second aspect, a deposition apparatus with a sputter deposition source (100) is provided. Further, methods of operating a sputter deposition source are provided.
    • 根据本公开的一个方面,提供了具有至少一个配置用于双面溅射沉积的电极组件(120)的溅射沉积源(100)。 所述电极组件(120)包括:用于提供待沉积的靶材料的阴极(125),其中所述阴极被配置用于在第一沉积侧(10)和第二等离子体(141)上产生第一等离子体(131) 在与所述第一沉积侧(10)相对的第二沉积侧(11)上; 和阳极组件(130),其具有布置在第一沉积侧(10)上用于影响第一等离子体的至少一个第一阳极(132)和布置在第二沉积侧(11)上的至少一个第二阳极(142),用于影响 第二个等离子体。 根据第二方面,提供了一种具有溅射沉积源(100)的沉积设备。 此外,提供了操作溅射沉积源的方法。
    • 26. 发明申请
    • SYSTEM FOR SUBSTRATE PROCESSING, VACUUM ROTATION MODULE FOR A SYSTEM FOR SUBSTRATE PROCESSING AND METHOD OF OPERATING A SUBSTRATE PROCESSING SYSTEM
    • 用于基板处理的系统,用于基板处理的系统的真空旋转模块和操作基板处理系统的方法
    • WO2015149848A1
    • 2015-10-08
    • PCT/EP2014/056604
    • 2014-04-02
    • APPLIED MATERIALS, INC.BERGER, ThomasLINDENBERG, Ralph
    • BERGER, ThomasLINDENBERG, Ralph
    • H01L21/677C23C14/56
    • C23C14/568H01L21/67712H01L21/67715
    • A substrate processing system for processing an essentially vertically-oriented substrate is described. The substrate processing system includes a first vacuum chamber having a first dual track transportation system with a first transportation track and a second transportation track, at least one lateral displacement mechanism configured for lateral displacement of the substrate from the first transportation track to the second transportation track or vice versa within the first vacuum chamber, and a vacuum rotation module having a second vacuum chamber, wherein the vacuum rotation module comprises a vertical rotation axis for rotating the substrate around the vertical rotation axis within the second vacuum chamber, wherein the vacuum rotation module having a second dual track transportation system with a first rotation track and a second rotation track, wherein the first rotation track is rotatable to form a linear transportation path with the first transportation track and the second rotation track is rotatable to form a linear transportation path with the second transportation track, and wherein the vertical rotation axis is between the first rotation track and the second rotation track.
    • 描述了用于处理基本垂直取向的基板的基板处理系统。 基板处理系统包括具有第一双轨运输系统的第一真空室,第一双轨运输系统具有第一运输轨道和第二运输轨道,至少一个侧向位移机构,其构造成用于将基板从第一运输轨道横向移位到第二运输轨道 或者反之亦然;以及具有第二真空室的真空旋转模块,其中所述真空旋转模块包括用于在所述第二真空室内围绕所述垂直旋转轴旋转所述基板的垂直旋转轴线,其中所述真空旋转模块 具有具有第一旋转轨道和第二旋转轨道的第二双轨道运输系统,其中所述第一旋转轨道可旋转以形成具有所述第一运输轨道的线性运输路径,并且所述第二旋转轨道可旋转以形成具有 第二条运输轨道, 并且其中所述垂直旋转轴线在所述第一旋转轨道和所述第二旋转轨道之间。
    • 27. 发明申请
    • PROCESSING SYSTEM AND METHOD OF OPERATING A PROCESSING SYSTEM
    • 处理系统和操作处理系统的方法
    • WO2009156196A1
    • 2009-12-30
    • PCT/EP2009/054149
    • 2009-04-07
    • APPLIED MATERIALS INC.LINDENBERG, RalphKOPARAL, ErkanBERGER, Thomas
    • LINDENBERG, RalphKOPARAL, ErkanBERGER, Thomas
    • C23C14/56
    • C23C14/568
    • A coating system 1 comprises a swing station 2 including a swing module and an arrangement of chambers. The arrangement of chambers comprises a lock chamber 3 and a first coating chamber 4. The lock chamber 3 is configured as a combined lock-in/lock-out chamber. The arrangement of chambers has a first substantially linear transport path T1 indicated by dashed lines, and a second substantially linear transport path T2 indicated by dashed lines. The arrangement of the paths T1 and T2 establishes a dual track. The system 1 includes a transport system for moving a substrate through the arrangement of chambers 3, 4 along the first transport path T1 and/or along the second transport path T2 as indicated by arrows. One or particularly both chambers 3 and 4 comprise transfer means for transferring the substrate/carrier from the first path T1 to the second path T2 by a lateral movement of a dual or triple track section and/or from the second path T2 to the first path T1.
    • 涂覆系统1包括包括摆动模块和室的排列的摆动站2。 室的布置包括锁定室3和第一涂覆室4.锁定室3被构造为组合的锁定/锁定室。 室的布置具有由虚线表示的第一基本上线性的传输路径T1和由虚线表示的第二基本上线性的传输路径T2。 路径T1和T2的布置建立双轨道。 系统1包括用于沿着第一传送路径T1和/或沿箭头所示的第二传送路径T2移动基板通过室3,4的布置的传送系统。 一个或特别是两个腔室3和4包括传送装置,用于通过双轨道或三轨道部分的横向运动和/或从第二路径T2到第一路径将衬底/载体从第一路径T1传送到第二路径T2 T1。