专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

WO2011065965A3 AN ELECTROSTATIC CHUCK WITH AN ANGLED SIDEWALL 审中-公开
标题翻译：带有斜面侧壁的静电卡盘
公开(公告)号：WO2011065965A3
公开(公告)日：2011-09-09
申请号：PCT/US2010003013
申请日：2010-11-22
申请人： LAM RES CORP , DHINDSA RAJINDER , MANKIDY PRATIK , KIMBALL CHRIS
发明人： DHINDSA RAJINDER , MANKIDY PRATIK , KIMBALL CHRIS
IPC分类号： C23C16/44 , C23C16/458 , C23F4/04 , H01L21/48
CPC分类号： H01L21/6831 , C23C16/4405 , C23C16/4586 , H01J37/32541 , H01L21/68735
摘要： A substrate support for a plasma processing chamber has an angled sidewall at an upper periphery thereof. The substrate is surrounded by an edge ring which underlies a substrate supported on an upper substrate support surface of the substrate support during plasma processing. The angled sidewall is the only surface of the substrate support exposed and subject to byproduct deposition during plasma processing. The angled sidewall enhances sputtering rate of the byproduct deposition during an in situ chamber clean process wherein a cleaning gas supplied to the chamber is energized into a plasma state for cleaning the byproduct deposition.
摘要翻译：用于等离子体处理室的衬底支撑件在其上部周边处具有成角度的侧壁。在等离子体处理期间，衬底被支撑在衬底支撑件的上衬底支撑表面上的衬底下方的边缘环围绕。成角度的侧壁是暴露的衬底支撑件的唯一表面，并且在等离子体处理期间经受副产物沉积。成角度的侧壁在原位室清洁过程期间增强了副产品沉积的溅射速率，其中供应到室的清洁气体被激励成等离子体状态以清洁副产品沉积。

12. 发明申请

WO2012039944A1 METHOD FOR REMOVING MERCURY CONTAMINATION FROM SOLID SURFACES 审中-公开
标题翻译：从固体表面去除汞污染的方法
公开(公告)号：WO2012039944A1
公开(公告)日：2012-03-29
申请号：PCT/US2011/050797
申请日：2011-09-08
申请人： CONOCOPHILLIPS COMPANY , LORD, III, Charles John , LAMBERTSSON, Lars Torsten , BJORN, Erik Lennart , FRECH, Wolfgang
发明人： LORD, III, Charles John , LAMBERTSSON, Lars Torsten , BJORN, Erik Lennart , FRECH, Wolfgang
IPC分类号： C22B7/00 , C22B43/00 , C23F4/04 , C23G5/024 , C10G21/22
CPC分类号： C22B43/00 , C22B7/006 , C23G5/02893 , Y02P10/234
摘要： A method of selecting a mercury-contaminated solid surface followed by heating a cleaning solution to a temperature less than 100C. The cleaning solution can contain hydrocarbon oil and one or more organic sulfur compounds. Afterwards, the heated cleaning solution is contacted with the mercury-contaminated solid surface to remove the mercury contamination.
摘要翻译：选择汞污染的固体表面，然后将清洗溶液加热到低于100℃的温度的方法。清洁溶液可以含有烃油和一种或多种有机硫化合物。之后，将加热的清洁溶液与汞污染的固体表面接触以除去汞污染物。

13. 发明申请

WO2010141257A3 METHOD AND APPARATUS FOR ETCHING 审中-公开
标题翻译：用于蚀刻的方法和装置
公开(公告)号：WO2010141257A3
公开(公告)日：2011-03-03
申请号：PCT/US2010035959
申请日：2010-05-24
申请人： APPLIED MATERIALS INC , CHESHIRE ALAN
发明人： CHESHIRE ALAN
IPC分类号： C23F4/04 , H01L21/3065
CPC分类号： B81C1/00531 , B81C2201/0112 , H01J37/321 , H01J37/3244 , H01J37/32449 , H01L21/30655
摘要： Embodiments of the invention relate to a substrate etching method and apparatus. In one embodiment, a method for etching a substrate in a plasma etch reactor is provided that includes a) depositing a polymer on a substrate in an etch reactor, b) etching the substrate using a gas mixture including a fluorine-containing gas and oxygen in the etch reactor, c) etching a silicon-containing layer the substrate using a fluorine-containing gas without mixing oxygen in the etch reactor, and d) repeating a), b) and c) until an endpoint of a feature etched into the silicon-containing layer is reached.
摘要翻译：本发明的实施例涉及一种基板蚀刻方法和装置。在一个实施例中，提供了一种在等离子体蚀刻反应器中蚀刻衬底的方法，其包括：a）在蚀刻反应器中在衬底上沉积聚合物，b）使用包含含氟气体和氧的气体混合物蚀刻衬底蚀刻反应器，c）使用含氟气体在含氧气体中蚀刻含硅层，而不在蚀刻反应器中混合氧，以及d）重复a），b）和c）直到蚀刻到硅中的特征的端点到达层。

14. 发明申请

WO2010091361A3 PLASMA SOURCE AND METHOD FOR REMOVING MATERIALS FROM SUBSTRATES UTILIZING PRESSURE WAVES 审中-公开
标题翻译：使用压力波的基板去除材料的等离子体源和方法
公开(公告)号：WO2010091361A3
公开(公告)日：2011-01-27
申请号：PCT/US2010023502
申请日：2010-02-08
申请人： AP SOLUTIONS INC , YANCEY PETER JOSEPH
发明人： YANCEY PETER JOSEPH
IPC分类号： C23F4/04 , H01H1/24 , H01L21/3065
CPC分类号： H01J37/32009 , B08B7/0035 , B44D3/16 , C23G5/00 , H05H2001/2481 , H05H2001/2487
摘要： In a method is provided for removing a material from a substrate, a plasma is generated at atmospheric pressure. The plasma includes an energetic species reactive with one or more components of the material. The plasma is flowed from an outlet as a plasma plume that includes periodic regions of high plasma density and low plasma density. The material is exposed to the plasma plume. At least one component of the material reacts with the energetic species, and at least one other component of the material is physically impacted and moved by one or more of the regions of high plasma density.
摘要翻译：在提供用于从基板去除材料的方法中，在大气压下产生等离子体。等离子体包括与材料的一种或多种组分反应的能量物质。等离子体作为等离子体羽流从出口流出，其包括高等离子体密度和低等离子体密度的周期性区域。材料暴露于等离子体羽流。材料的至少一种组分与能量物质反应，材料的至少一种其它组分被高等离子体密度的一个或多个区域物理地冲击和移动。

15. 发明申请

WO2010091365A3 PLASMA SOURCE WITH INTEGRAL BLADE AND METHOD FOR REMOVING MATERIALS FROM SUBSTRATES 审中-公开
标题翻译：具有整体叶片的等离子体源和从基板上去除材料的方法
公开(公告)号：WO2010091365A3
公开(公告)日：2011-01-20
申请号：PCT/US2010023509
申请日：2010-02-08
申请人： AP SOLUTIONS INC , YANCEY PETER JOSEPH , KINGSLEY JEFFREY
发明人： YANCEY PETER JOSEPH , KINGSLEY JEFFREY
IPC分类号： C23F4/04 , H05H1/24
CPC分类号： H01J37/32009 , B08B7/0035 , B44D3/16 , C23G5/00 , H05H2001/2481 , H05H2001/2487
摘要： An atmospheric pressure plasma source includes a body including a distal end, a blade extending from the distal end and terminating at a blade edge, a plasma-generating unit, and a plasma outlet communicating with the plasma-generating unit and positioned at the distal end. The plasma outlet is oriented at a downward angle generally toward the blade edge, wherein the plasma outlet provides a plasma path directed generally toward the blade edge. The plasma may be applied to the coating at an interface between the coating and an underlying substrate. While applying the plasma, the blade is moved into contact with the coating at the interface, wherein the blade assists in separating the coating from the substrate while one or more components of the coating react with energetic species of the plasma.
摘要翻译：大气压等离子体源包括主体，其包括远端，从远端延伸并终止于叶片边缘的叶片，等离子体产生单元和等离子体出口，其与等离子体产生单元连通并位于远端。等离子体出口以大致朝向叶片边缘的向下的角度定向，其中等离子体出口提供大致朝向叶片边缘的等离子体路径。等离子体可以在涂层和下面的基底之间的界面处施加到涂层上。在施加等离子体时，刀片在界面处与涂层接触，其中刀片有助于将涂层与基底分离，同时涂层的一个或多个成分与等离子体的能量物质反应。

16. 发明申请

WO01067501A1 APPARATUS AND METHOD FOR REDUCING DIFFERENTIAL SPUTTER RATES 审中-公开
标题翻译：降低差异爆炸率的装置和方法
公开(公告)号：WO01067501A1
公开(公告)日：2001-09-13
申请号：PCT/EP2001/002743
申请日：2001-03-12
IPC分类号： B23K15/00 , C23F4/04 , G03F1/74 , H01J37/305 , H01L21/302 , H01L21/3205 , H01L23/52 , H01L21/3213
CPC分类号： G03F1/74 , H01J37/3056 , H01J2237/31744
摘要： The invention relates to reducing Focused Ion Beam (FIB) differential sputter rates in crystalline materials. In integrated circuits, copper-based interconnects are beginning to replace aluminum-based interconnects. Unfortunately, FIB sputtering of copper is more difficult than that for known aluminum alloys, because of large changes in milling rates based upon grain orientation. In order to meet the need for an improved milling technique that will lead to more uniform milling of such elements, it is proposed according to the invention to apply a sacrificial layer onto a surface of a crystalline structure followed by the projection of an ion beam onto the applied sacrificial layer, preferably in a repetitive process until the crystalline structure is removed or reduced to a predetermined level, thus increasing uniformity of the removal of the atoms from the surface of the crystalline structure during the projection of the ion beam.
摘要翻译：本发明涉及在结晶材料中减少聚焦离子束（FIB）差示溅射速率。在集成电路中，铜基互连开始取代铝基互连。不幸的是，由于基于晶粒取向的研磨速率的大的变化，铜的FIB溅射比已知的铝合金更难。为了满足对这种元件进行更均匀研磨的改进的铣削技术的需要，根据本发明提出了将牺牲层施加到晶体结构的表面上，随后将离子束投影到所施加的牺牲层优选地以重复的过程直到晶体结构被去除或还原到预定水平，从而增加在离子束投影期间从晶体结构表面去除原子的均匀性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式