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11. 发明申请

WO2004094335A1 CALCIUM PHOSPHATE CEMENT, USE AND PREPARATION THEREOF 审中-公开
标题翻译：磷酸钙水泥，其使用和制备
公开(公告)号：WO2004094335A1
公开(公告)日：2004-11-04
申请号：PCT/US2004/011637
申请日：2004-04-16
申请人： CALCITEC, INC. , LIN, Jiin-Huey, Chern , JU, Chien-Ping , CHEN, Wen-Cheng , LIN, Kuan-Liang , WANG, I-Chang
发明人： LIN, Jiin-Huey, Chern , JU, Chien-Ping , CHEN, Wen-Cheng , LIN, Kuan-Liang , WANG, I-Chang
IPC分类号： C04B12/02
CPC分类号： A61L24/001 , A61L24/02 , A61L27/12 , A61L27/50 , C04B12/02 , C04B12/025 , C04B28/344 , C04B28/346 , C04B2111/00086 , C04B2111/00206 , C04B2111/0025 , C04B2111/00836 , C30B7/00 , C30B29/14 , C30B29/62 , Y10T428/2991 , Y10T428/2993 , C04B22/126 , C04B22/064 , C04B20/008 , C04B40/0082 , C04B40/0259 , C04B14/383
摘要： Monophasic TTCP particles having surfaces covered with whiskers or fine crystals with a width ranging from 2 to 500 nm and a length ranging from 5 to 5000 nm are provided and methods for their preparation. In another embodiment, methods are provided for using such monophasic TTCP particles to prepare a calcium phosphate cement having the consistency of paste that sets to form a substance with a compressive strength of about 10 MPa after setting for about 30 minutes and a compressive strength of about 25 MPa within 24 hours of exposure to in vivo conditions. The paste can be used directly to treat a defect in a bone or a tooth in a patient or the paste can be shaped and implanted into the defect.
摘要翻译：提供具有覆盖有晶须的表面或具有2至500nm宽度和5至5000nm的长度的晶须的单相TTCP颗粒及其制备方法。在另一个实施方案中，提供了使用这种单相TTCP颗粒来制备具有糊料稠度的磷酸钙水泥的方法，所述磷酸钙粘合剂在凝固约30分钟后设定为形成抗压强度为约10MPa的物质，并且抗压强度为约在暴露于体内条件的24小时内25MPa。糊剂可以直接用于治疗患者的骨骼或牙齿中的缺陷，或者可以将糊状物成形并植入缺陷中。

12. 发明申请

WO98059097A1 MAKING MONOCRYSTALS IN THE FORM OF PLATES BY GROWTH IN A SOLUTION 审中-公开
标题翻译：通过在解决方案中成长形成单板的单晶
公开(公告)号：WO98059097A1
公开(公告)日：1998-12-30
申请号：PCT/FR1998/001325
申请日：1998-06-24
IPC分类号： C30B7/00 , C30B29/14
CPC分类号： C30B7/00 , C30B29/14
摘要： The invention concerns a method for making a monocrystal by growth in a solution from a crystal nucleus supported on a rotating platform immersed in a solution consisting in: orienting the crystal nucleus (53, 54, 55) on the platform (43, 44, 45) along the orientation for the required monocrystal; bringing about the monocrystal (56, 57, 58) growth between the platform (43, 44, 45) and a plane located opposite the platform and at a predetermined distance from the platform, said plane blocking the monocrystal growth in the direction perpendicular to the platform and favouring a lateral growth of the monocrystal in the direction parallel to the platform: proceeding with the monocrystal (56, 57, 58) growth until the required lateral growth is obtained.
摘要翻译：本发明涉及通过在支撑在浸在溶液中的旋转平台上的晶核的溶液中生长制备单晶的方法，该溶液包括：将晶核（53,54,55）定向在平台（43,44,45）上）沿着所需单晶的方向; 导致平台（43,44,45）与位于平台相对并且与平台相距预定距离的平面上的单晶（56,57,58）生长，所述平面阻止垂直于该平台的方向上的单晶生长平台，并且有利于在平行于平台的方向上单晶的横向生长：进行单晶（56,57,58）生长直到获得所需的横向生长。

13. 发明申请

WO9324679A2 SINGLE CESIUM TITANYL ARSENATE-TYPE CRYSTALS, AND THEIR PREPARATION 审中-公开
标题翻译：单一的TESANYL ARSENATE型晶体及其制备
公开(公告)号：WO9324679A2
公开(公告)日：1993-12-09
申请号：PCT/US9304394
申请日：1993-05-14
申请人： DU PONT
发明人： CHENG LAP KIN
IPC分类号： G02F1/35 , C30B9/00 , C30B9/06 , C30B29/22 , G02F1/355
CPC分类号： C30B9/00 , C30B29/10 , C30B29/14
摘要： A flux process is disclosed for producing a single, orthorhombic crystal of Cs1-xMxTiOAsO4 (where M is Na, K, Rb, and/or T1 and x is from 0 to 0.4) wherein the dimension of the crystal along each axis is at least about 2 mm, and wherein the product at the dimensions along the three axes is at least about 15 mm . The process involves preparing a homogeneous melt containing the components for forming said crystal and a flux comprising oxides of Cs and As at a temperature no higher than the decomposition temperature of said orthorhombic crystal, the mole fraction of M relative to the total Cs+M in the melt being within the range of from 0 to about 0.2; introducing a seed crystal for said single crystal in the melt; activating the controlled crystallization on the seed crystal; and continuing the crystallization until formation of the single crystal is completed. Single crystals of Cs1-xMxTiOAsO4 (including crystals at least about 5 mm x 5 mm 5 mm) are also disclosed.
摘要翻译：公开了一种用于生产Cs1-xMxTiOAsO4（其中M是Na，K，Rb和/或T1和x为0至0.4）的单个斜方晶体的焊剂工艺，其中沿着每个轴的晶体的尺寸至少为约2mm，并且其中沿着三个轴线的尺寸的产品为至少约15mm 3。该方法包括制备含有用于形成所述晶体的组分的均匀熔体和包含Cs和As的氧化物的焊剂，其温度不高于所述正交晶体的分解温度，M相对于总Cs + M的摩尔分数熔体在0至约0.2的范围内; 在熔体中引入所述单晶的晶种; 激活晶种上的受控结晶; 并继续结晶，直到完成单晶的形成。还公开了Cs1-xMxTiOAsO4的单晶（包括至少约5mm×5mm×5mm的晶体）。

14. 发明申请

WO1993017157A1 HYDROTHERMAL PROCESS FOR GROWING OPTICAL-QUALITY SINGLE CRYSTALS AND AQUEOUS MINERALIZER THEREFOR 审中-公开
标题翻译：用于生产光学质量单晶和水性矿物质的水热法
公开(公告)号：WO1993017157A1
公开(公告)日：1993-09-02
申请号：PCT/US1993001528
申请日：1993-02-26
申请人： E.I. DU PONT DE NEMOURS AND COMPANY
发明人： E.I. DU PONT DE NEMOURS AND COMPANY , CHENG, Lap, Kin
IPC分类号： C30B07/10
CPC分类号： C30B7/00 , C30B29/10 , C30B29/14
摘要： A hydrothermal process is disclosed for growing a crystal at MTiOXO4 wherein M is NH4, K, Rb and/or Tl or mixtures thereof with Cs and X is P and/or As, at elevated temperatures using a mineralizer comprising both M+1 and X+5 and an amount of F-0 effective to increase the solubility of MTiOXO4 in the mineralizer. Mineralizers containing F-1, M+1 and X+5 are disclosed wherein F-1 is present in an amount effective to increase the solubility of MTiOXO4 in the mineralizer and to provide a MTiOXO4 solubility of at least about 1% by weight at the operating temperature and pressure for the hydrothermal production.

15. 发明申请

WO8804882A2 PROCESS FOR PRODUCING AN OPTICAL WAVEGUIDE AND THE PRODUCT THEREFROM 审中-公开
标题翻译：生产光波导和产品的方法
公开(公告)号：WO8804882A2
公开(公告)日：1988-07-14
申请号：PCT/US8703237
申请日：1987-12-15
申请人： DU PONT
发明人： BIERLEIN JOHN DAVID , BRIXNER LOTHAR HEINRICH , FERRETTI AUGUST , HSU WILLIAM YANG-HSING
IPC分类号： C30B33/00 , G02B6/12 , G02B6/13 , G02B6/134 , G02F1/355
CPC分类号： G02F1/3553 , C30B29/14 , C30B29/22 , C30B33/00 , G02B6/13 , G02B6/1345
摘要： A process for producing an optical waveguide comprising contacting at least one optically smooth surface of a single crystal of K1-xRbxTiOMO4 wherein x is from 0 to 1 and M is P or As with a specified molten salt of at least one of Rb, Cs and Tl at a temperature of from about 200 DEG C to about 600 DEG C for a time sufficient to increase the surface index of refraction at least about 0.00025 with respect to the index of refraction of the starting crystal, and cooling the resulting crystal. The product made thereby and a waveguide device using the same are also disclosed.
摘要翻译：一种用于制造光波导的方法，包括使K1-xRbxTiOMO4的单晶的至少一个光学光滑表面接触，其中x为0至1，M为P或As，与Rb，Cs中至少一种的规定熔融盐和 Tl在约200℃至约600℃的温度下持续足以相对于起始晶体的折射率将表面折射率增加至少约0.00025，并冷却所得晶体。由此制成的产品和使用该产品的波导装置也被公开。

16. 发明申请

WO2013031995A1 MANUFACTURING METHOD OF COMPOSITE OXIDE AND MANUFACTURING METHOD OF POWER STORAGE DEVICE 审中-公开
标题翻译：复合氧化物的制造方法和储能装置的制造方法
公开(公告)号：WO2013031995A1
公开(公告)日：2013-03-07
申请号：PCT/JP2012/072280
申请日：2012-08-27
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , MIWA, Takuya , NOMOTO, Kuniharu , MOMO, Junpei
发明人： MIWA, Takuya , NOMOTO, Kuniharu , MOMO, Junpei
IPC分类号： C01B25/45 , H01M4/58
CPC分类号： H01M4/5825 , C01D15/02 , C01G45/006 , C01G49/009 , C01G51/006 , C01G53/006 , C30B7/10 , C30B29/14 , H01M4/364 , H01M4/587 , H01M2004/028 , H01M2220/30
摘要： An object is to reduce variation in shape of crystals that are to be formed. Solutions containing respective raw materials are made in an environment where an oxygen concentration is lower than that in air, the solutions containing the respective raw materials are mixed in an environment where an oxygen concentration is lower than that in air to form a mixture solution, and with use of the mixture solution, a composite oxide is formed by a hydrothermal method.
摘要翻译：目的是减少要形成的晶体的形状变化。含有各种原料的溶液在氧气浓度低于空气的环境中制备，将含有各原料的溶液在氧浓度低于空气中的溶液中混合形成混合溶液，使用混合溶液，通过水热法形成复合氧化物。

17. 发明申请

WO2012125549A3 METHOD AND SYSTEM FOR SUPPRESSION OF STIMULATED RAMAN SCATTERING IN LASER MATERIALS 审中-公开
标题翻译：用于抑制激光材料中刺激拉曼散射的方法和系统
公开(公告)号：WO2012125549A3
公开(公告)日：2012-11-08
申请号：PCT/US2012028755
申请日：2012-03-12
申请人： L LIVERMORE NAT SECURITY LLC , CAIRD JOHN A , BAYRAMIAN ANDREW J , EBBERS CHRISTOPHER A
发明人： CAIRD JOHN A , BAYRAMIAN ANDREW J , EBBERS CHRISTOPHER A
IPC分类号： G02B1/02 , C30B29/10 , H01S3/20
CPC分类号： H01S3/005 , C30B7/00 , C30B17/00 , C30B29/14 , C30B29/22 , G02B1/005 , G02F1/3551 , G02F1/37 , G02F2001/354 , H01S3/163 , H01S3/1643 , H01S3/1645 , H01S3/1685 , H01S2301/03
摘要： A composition of matter is provided having the general chemical formula K(H,D)2P(16Ox,18Oy)4, where x 0.002, and x + y ~ 1. Additionally, a method of fabricating an optical material by growth from solution is provided. The method includes providing a solution including a predetermined percentage of (H,D)2 16O and a predetermined percentage of (H,D)2 18O, providing a seed crystal, and supporting the seed crystal on a platform. The method also includes immersing the seed crystal in the solution and forming the optical material. The optical material has the general chemical formula K(H,D)2P(16Ox,18Oy)4, where x 0.002, and x + y ~ 1.
摘要翻译：提供了具有通式化学式K（H，D）2P（160x，180y）4的物质组成，其中x <0.998或y> 0.002，x + y〜1。另外，制造光学材料的方法通过解决方案的增长。该方法包括提供包含（H，D）216O的预定百分比和（H，D）2 18O的预定百分比的溶液，提供晶种，并将晶种支撑在平台上。该方法还包括将晶种浸入溶液中并形成光学材料。光学材料具有通式K（H，D）2P（160x，180y）4，其中x <0.998或y> 0.002，x + y〜1。

18. 发明申请

WO2004044274A1 A SYNTHETIC BONE MATERIAL 审中-公开
标题翻译：合成骨料
公开(公告)号：WO2004044274A1
公开(公告)日：2004-05-27
申请号：PCT/GB2003/004924
申请日：2003-11-13
申请人： CAMBRIDGE UNIVERSITY TECHNICAL SERVICES LIMITED , AIZAWA, Mamoru , BEST, Serena , BONFIELD, William
发明人： AIZAWA, Mamoru , BEST, Serena , BONFIELD, William
IPC分类号： C30B7/00
CPC分类号： A61L27/12 , A61L24/02 , A61L2430/02 , C30B7/00 , C30B29/14
摘要： A synthetic silicon-containing apatite single crystal, for example a silicon-substituted apatite single crystal. The single crystal may be in the form of a fibre having a long-axis length in excess of 5 µm. The single crysal may be used in a synthetic bone material.
摘要翻译：合成含硅磷灰石单晶，例如硅取代磷灰石单晶。单晶可以是长轴长度超过5μm的纤维的形式。单一的哭泣可以用于合成骨材料中。

19. 发明申请

WO02006570A1 NONLINEAR OPTICAL MATERIALS AND PROCESS FOR THE PREPARATION THEREOF 审中-公开
标题翻译：非线性光学材料及其制备方法
公开(公告)号：WO02006570A1
公开(公告)日：2002-01-24
申请号：PCT/GB2001/003220
申请日：2001-07-17
IPC分类号： C30B17/00 , G02F1/355 , C30B15/00 , C30B29/22
CPC分类号： G02F1/3553 , C30B7/00 , C30B17/00 , C30B29/10 , C30B29/14
摘要： A non-linear optical crystal of a compound having the general formula DxM1-xTOZO4, including isomorphs thereof, where: D is a dopant which comprises one or both of Rb and Cs; M is selected from one or both of K and Ag; T comprises one or more of Ti, Sn and Ge, optionally together with one or both of Nb and Ta; Z is selected from one or both of P and As, optionally together with one or both of Ge and Si; and 0
摘要翻译：具有通式DxM1-xTOZO4的化合物的非线性光学晶体，包括其同晶，其中：D是包含Rb和Cs中的一个或两个的掺杂剂; M选自K和Ag中的一个或两个; T包括Ti，Sn和Ge中的一种或多种，任选地与Nb和Ta中的一种或两种一起; Z选自P和As中的一个或两个，可选地与Ge和Si中的一个或两个一起选择; 和0

20. 发明申请

WO00070130A1 ETCHING METHOD AND ARTICLE PROCESSED BY THE METHOD 审中-公开
标题翻译：蚀刻方法和方法进行处理
公开(公告)号：WO00070130A1
公开(公告)日：2000-11-23
申请号：PCT/JP2000/003146
申请日：2000-05-17
IPC分类号： C30B33/00 , C30B33/08 , C30B33/10 , H03H3/02 , C30B29/18 , H01L21/306
CPC分类号： C30B33/10 , C30B29/10 , C30B29/14 , C30B29/18 , C30B33/00 , C30B33/08 , H03H3/02
摘要： A method for etching an article containing a crystal while immersing it in an acid liquid at an etching rate higher than the crystal growth rate of the article. An article processed by the etching method is also disclosed. The etching rate is calculated by performing a preliminary etching step where the article is immersed in an acid liquid, and the etching time for which the etching is conducted is determined from the calculated etching rate. The article is immersed in the acid liquid for the determined time to perform the etching step. The etching rate is higher than the crystal growth rate of the article.
摘要翻译：一种用于在以高于制品的晶体生长速率的蚀刻速率将其浸入酸性液体中的情况下蚀刻含有晶体的物品的方法。还公开了通过蚀刻方法处理的制品。通过进行将制品浸渍在酸性液体中的预蚀刻步骤来计算蚀刻速率，并根据计算出的蚀刻速率确定进行蚀刻的蚀刻时间。将物品浸入酸性液体中确定时间以进行蚀刻步骤。蚀刻速率高于制品的晶体生长速率。

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