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11. 发明申请

WO2012033697A3 USING BEAM BLOCKERS TO PERFORM A PATTERNED IMPLANT OF A WORKPIECE 审中-公开
标题翻译：使用光束阻挡器来执行工作的图案植入
公开(公告)号：WO2012033697A3
公开(公告)日：2012-07-26
申请号：PCT/US2011050156
申请日：2011-09-01
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , DISTASO DANIEL , LOW RUSSELL J
发明人： DISTASO DANIEL , LOW RUSSELL J
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/3026 , H01J37/3171 , H01J2237/31703
摘要： Blockers (300) in an ion beam blocker unit (216) selectively block or trim an ion beam (212). In one instance, the ion beam has first current regions and second, current regions. These current regions may be unequal, The ion beam is then implanted into a workpiece (213) to form regions with different doses. The workpiece may be scanned so that the entirety of its surface is implanted.
摘要翻译：离子束阻挡单元（216）中的阻挡剂（300）选择性地阻挡或修整离子束（212）。在一种情况下，离子束具有第一电流区和第二电流区。这些当前区域可能是不等的。然后将离子束植入工件（213）以形成具有不同剂量的区域。可以扫描工件以使其整个表面被植入。

12. 发明申请

WO2008136858A3 TECHNIQUES FOR REMOVING MOLECULAR FRAGMENTS FROM AN ION IMPLANTER 审中-公开
标题翻译：从离子植入物中去除分子碎片的技术
公开(公告)号：WO2008136858A3
公开(公告)日：2009-04-30
申请号：PCT/US2007084102
申请日：2007-11-08
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , HATEM CHRISTOPHER R , SCHEUER JAY THOMAS , LOW RUSSELL J , EVANS MORGAN D , ENGLAND JONATHAN GERALD
发明人： HATEM CHRISTOPHER R , SCHEUER JAY THOMAS , LOW RUSSELL J , EVANS MORGAN D , ENGLAND JONATHAN GERALD
IPC分类号： H01J7/18 , C01B3/00 , H01J27/02 , H01J37/317
CPC分类号： C23C14/48 , C01B3/0026 , C01B3/0031 , C01B3/0036 , C01B3/0047 , C01B3/0068 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/31705 , Y02E60/327
摘要： Techniques for removing molecular fragments from an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for removing molecular fragments from an ion implanter. The apparatus may comprise a supply mechanism configured to couple to an ion source chamber and to supply a feed material to the ion source chamber. The apparatus may also comprise one or more hydrogen-absorbing materials placed in a flow path of the feed material, to prevent at least one portion of hydrogen-containing molecular fragments in the feed material from entering the ion source chamber.
摘要翻译：公开了从离子注入机去除分子碎片的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于从离子注入机去除分子碎片的装置。该装置可以包括配置成耦合到离子源室并且将进料材料供应到离子源室的供给机构。该装置还可以包括放置在进料材料的流动路径中的一种或多种吸氢材料，以防止进料中至少一部分含氢分子碎片进入离子源室。

13. 发明申请

WO2009026340A3 INSULATED CONDUCTING DEVICE WITH MULTIPLE INSULATION SEGMENTS 审中-公开
标题翻译：具有多个绝缘部分的绝缘导体装置
公开(公告)号：WO2009026340A3
公开(公告)日：2009-04-23
申请号：PCT/US2008073674
申请日：2008-08-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , TEKLETSADIK KASEGN D , KRAUSE STEPHEN E , HERMANSON ERIC D , LOW RUSSELL J
发明人： TEKLETSADIK KASEGN D , KRAUSE STEPHEN E , HERMANSON ERIC D , LOW RUSSELL J
IPC分类号： H01B17/56 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/09 , H01J2237/2001 , H01J2237/26
摘要： Insulated conducting devices and related methods are disclosed. An insulated conducting device for a voltage structure comprises: a conductor connected to a voltage; and multiple insulation segments enclosing the conductor, the multiple insulation segments interfacing with one another.
摘要翻译：公开了绝缘导电装置及相关方法。一种用于电压结构的绝缘导电装置包括：连接到电压的导体; 以及包围导体的多个绝缘段，多个绝缘段彼此接合。

14. 发明申请

WO2006084143A8 WAFER-SCANNING ION IMPLANTER HAVING FAST BEAM DEFLECTION APPARATUS FOR BEAM GLITCH RECOVERY 审中-公开
标题翻译：具有快速光束偏转装置的波束扫描离子植绒装置用于光束恢复
公开(公告)号：WO2006084143A8
公开(公告)日：2008-02-14
申请号：PCT/US2006003863
申请日：2006-02-03
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , LOW RUSSELL J , ANGEL GORDON C
发明人： LOW RUSSELL J , ANGEL GORDON C
IPC分类号： H01J37/317 , H01J37/147 , H01J37/304
CPC分类号： H01J37/304 , H01J37/147 , H01J37/3171 , H01J2237/043 , H01J2237/15 , H01J2237/1501 , H01J2237/20228 , H01J2237/3045 , H01J2237/30472
摘要： An analyzer module of an ion implanter includes beam deflection apparatus adjacent to a resolving opening from which a terminal ion beam portion of an ion beam emanates. In response to a beam deflection voltage of a first value of substantially zero volts in a first operating condition, the beam deflection apparatus directs a source ion beam portion of the ion beam toward the resolving opening to generate the terminal ion beam portion. When the beam deflection voltage has a high second value in a second operating condition, the beam deflection apparatus directs the species of the source ion beam portion away from the resolving opening such that the terminal ion beam portion is substantially extinguished. Beam control circuitry is operative during the second operating condition to transition the ion implanter to the first operating condition by rapidly switching the beam deflection voltage from the second value to the first value. An implantation method employs the features of the implanter to recover from glitches during implantation and thereby improve the yield of implanted wafers.
摘要翻译：离子注入机的分析器模块包括与分离开口相邻的光束偏转装置，离子束的末端离子束部分从该分离开口发射。响应于在第一操作条件下基本为零伏的第一值的光束偏转电压，光束偏转装置将离子束的源离子束部分引向分辨开口以产生端子离子束部分。当光束偏转电压在第二操作条件下具有高的第二值时，光束偏转装置引导源离子束部分的种类远离分辨开口，使得末端离子束部分基本上熄灭。光束控制电路在第二操作条件期间操作，以通过将光束偏转电压从第二值快速切换到第一值来将离子注入机转换到第一操作状态。植入方法采用注入机的特征从植入期间的毛刺恢复，从而提高植入晶片的产量。

15. 发明申请

WO2010085439A2 SELF-ALIGNED SELECTIVE EMITTER FORMED BY COUNTERDOPING 审中-公开
标题翻译：自对准的选择性发射体
公开(公告)号：WO2010085439A2
公开(公告)日：2010-07-29
申请号：PCT/US2010021354
申请日：2010-01-19
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , BLAKE JULIAN G , LOW RUSSELL J
发明人： BLAKE JULIAN G , LOW RUSSELL J
IPC分类号： H01L31/042 , H01L21/265
CPC分类号： H01L21/26513 , H01L21/268 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved method of doping substrates, such as a solar cell, is disclosed. Conductors, such as metai lines, are often deposited on the surface of a substrate. In some embodiments, the conductivity of the substrate beneath the conductors is different than the conductivity of other regions of the substrate. Therefore, the conductors can serve as the mask for a subsequent blanket doping, which changes the conductivity of the surface of the substrate, except beneath the conductors. In some embodiments, an initia! blanket doping is performed prior to the deposition of the conductors to create an initial uniformly doped region.
摘要翻译：公开了一种改进的掺杂衬底的方法，例如太阳能电池。诸如met线的导体通常沉积在基底的表面上。在一些实施例中，导体下面的衬底的导电性不同于衬底的其它区域的导电性。因此，导体可以用作随后的覆盖掺杂的掩模，这改变了导体表面以外的导电性。在一些实施例中，在沉积导体之前进行覆盖掺杂以产生初始均匀掺杂区域。

16. 发明申请

WO2008039745A3 TERMINAL STRUCTURE OF AN ION IMPLANTER 审中-公开
标题翻译：离子注入机的终端结构
公开(公告)号：WO2008039745A3
公开(公告)日：2008-06-26
申请号：PCT/US2007079371
申请日：2007-09-25
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , TEKLETSADIK KASEGAN D , LOW RUSSELL J
发明人： TEKLETSADIK KASEGAN D , LOW RUSSELL J
IPC分类号： H01J37/317 , H01J31/16 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/09 , H01J37/16 , H01J2237/0206 , H01J2237/026 , H01J2237/038 , H01J2237/08
摘要： An apparatus includes a conductive structure and an insulated conductor disposed proximate an exterior portion of the conductive structure to modify an electric field about the conductive structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kilovolts (kV)/inch disposed about a conductor. An ion implanter is also provided. The ion implanter includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulated conductor. The insulated conductor is disposed proximate an exterior portion of the terminal structure to modify an electric field about the terminal structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kV/inch disposed about a conductor.
摘要翻译：一种装置包括导电结构和靠近导电结构的外部设置的绝缘导体，以改变导电结构周围的电场。绝缘导体具有介电强度大于75千伏（kV）/英寸的绝缘体，其围绕导体设置。还提供离子注入机。离子注入机包括配置成提供离子束的离子源，限定空腔的端子结构，离子源至少部分地设置在空腔内，以及绝缘导体。绝缘导体靠近端子结构的外部布置以修改围绕端子结构的电场。绝缘导体具有围绕导体设置的介电强度大于75kV /英寸的绝缘体。

17. 发明申请

WO2006084143A3 WAFER-SCANNING ION IMPLANTER HAVING FAST BEAM DEFLECTION APPARATUS FOR BEAM GLITCH RECOVERY 审中-公开
标题翻译：具有快速光束偏转装置的波束扫描离子植绒装置用于光束恢复
公开(公告)号：WO2006084143A3
公开(公告)日：2007-11-01
申请号：PCT/US2006003863
申请日：2006-02-03
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , LOW RUSSELL J , ANGEL GORDON C
发明人： LOW RUSSELL J , ANGEL GORDON C
IPC分类号： H01J37/317 , H01J37/147 , H01J37/304
CPC分类号： H01J37/304 , H01J37/147 , H01J37/3171 , H01J2237/043 , H01J2237/15 , H01J2237/1501 , H01J2237/20228 , H01J2237/3045 , H01J2237/30472
摘要： An analyzer module of an ion implanter includes beam deflection apparatus adjacent to a resolving opening from which a terminal ion beam portion of an ion beam emanates. In response to a beam deflection voltage of a first value of substantially zero volts in a first operating condition, the beam deflection apparatus directs a source ion beam portion of the ion beam toward the resolving opening to generate the terminal ion beam portion. When the beam deflection voltage has a high second value in a second operating condition, the beam deflection apparatus directs the species of the source ion beam portion away from the resolving opening such that the terminal ion beam portion is substantially extinguished. Beam control circuitry is operative during the second operating condition to transition the ion implanter to the first operating condition by rapidly switching the beam deflection voltage from the second value to the first value. An implantation method employs the features of the implanter to recover from glitches during implantation and thereby improve the yield of implanted wafers.
摘要翻译：离子注入机的分析器模块包括与分离开口相邻的光束偏转装置，离子束的末端离子束部分从该分离开口发射。响应于在第一操作条件下基本为零伏特的第一值的光束偏转电压，光束偏转装置将离子束的源离子束部分引导到分辨开口以产生终端离子束部分。当光束偏转电压在第二操作状态下具有高的第二值时，光束偏转装置引导源离子束部分的种类远离分辨开口，使得终端离子束部分基本上熄灭。光束控制电路在第二操作条件期间操作，以通过将光束偏转电压从第二值快速切换到第一值来将离子注入机转换到第一操作状态。植入方法采用注入机的特征从植入期间的毛刺恢复，从而提高植入晶片的产量。

18. 发明申请

WO2007067551A3 TECHNIQUES FOR REDUCING EFFECTS OF PHOTORESIST OUTGASSING 审中-公开
标题翻译：降低光电导体效果的技术
公开(公告)号：WO2007067551A3
公开(公告)日：2007-11-08
申请号：PCT/US2006046424
申请日：2006-12-06
申请人： VARIAN SEMICONDUCTOR EQUIPMENT
发明人： LOW RUSSELL J , ENGLAND JONATHAN GERALD , KRAUSE STEPHEN E , HERMANSON ERIC D
IPC分类号： H01L21/302
CPC分类号： H01J37/3171 , H01J37/09 , H01J37/15 , H01J37/18 , H01J37/302 , H01J37/3023 , H01J2237/0455 , H01J2237/0458 , H01J2237/1503 , H01J2237/182 , H01J2237/188 , H01J2237/30488 , H01J2237/31705 , H01L21/266
摘要： Techniques for reducing effects of photoresist outgassing are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for reducing effects of photoresist outgassing in an ion implanter. The apparatus may comprise a drift tube located between an end- station and an upstream beamline component. The apparatus may also comprise a first variable aperture between the drift tube and the end-station. The apparatus may further comprise a second variable aperture between the drift tube and the upstream beamline component. The first variable aperture and the second variable aperture can be adjusted to facilitate differential pumping.
摘要翻译：公开了减少光阻剂除气效果的技术。在一个特定的示例性实施例中，技术可以被实现为用于减少离子注入机中的光致抗蚀剂除气的影响的装置。该装置可以包括位于末端站和上游束线组件之间的漂移管。该装置还可以包括漂移管和终端站之间的第一可变孔径。该装置还可以包括漂移管和上游束线组件之间的第二可变孔径。可以调节第一可变孔径和第二可变孔径以促进差动泵送。

19. 发明申请

WO2007067552A2 TECHNIQUES FOR PREVENTING PARASITIC BEAMLETS FROM AFFECTING ION IMPLANTATION 审中-公开
标题翻译：防止离子植入的PARASITIC BEAMLETS的技术
公开(公告)号：WO2007067552A2
公开(公告)日：2007-06-14
申请号：PCT/US2006046425
申请日：2006-12-06
申请人： VARIAN SEMICONDUCTOR EQUIPMENT
发明人： LOW RUSSELL J
IPC分类号： H01J3/14
CPC分类号： H01J37/3171 , H01J37/09 , H01J37/15 , H01J37/18 , H01J37/302 , H01J37/3023 , H01J2237/0455 , H01J2237/0458 , H01J2237/1503 , H01J2237/182 , H01J2237/188 , H01J2237/30488 , H01J2237/31705 , H01L21/266
摘要： Techniques for preventing parasitic beamlets from affecting ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for preventing parasitic beamlets from affecting ion implantation. The apparatus may comprise a controller that is configured to scan a spot beam back and forth, thereby forming an ion beam spanning a predetermined width. The apparatus may also comprise an aperture mechanism that, if kept stationary, allows the spot beam to pass through. The apparatus may further comprise a synchronization mechanism, coupled to the controller and the aperture mechanism, that is configured to cause the aperture mechanism to move in synchronization with the scanned spot beam, allowing the scanned spot beam to pass through but blocking one or more parasitic beamlets associated with the spot beam.
摘要翻译：公开了用于防止寄生子束影响离子注入的技术。在一个特定的示例性实施例中，技术可以被实现为用于防止寄生子束影响离子注入的装置。该装置可以包括配置成来回扫描点波束的控制器，从而形成横跨预定宽度的离子束。该装置还可以包括孔机构，如果保持静止，则允许点束通过。该装置还可以包括耦合到控制器和孔机构的同步机构，其被配置为使得孔径机构与扫描的点光束同步地移动，允许扫描的光束穿过但阻挡一个或多个寄生与点光束相关的子束。

20. 发明申请

WO2006107797A3 METHODS AND APPARATUS FOR GLITCH RECOVERY IN STATIONARY-BEAM ION IMPLANTATION PROCESS USING EAST ION BEAM CONTROL 审中-公开
标题翻译：使用光束束控制的静态光束离子植入工艺中的玻璃恢复方法与装置
公开(公告)号：WO2006107797A3
公开(公告)日：2007-06-14
申请号：PCT/US2006012144
申请日：2006-03-31
申请人： VARIAN SEMICONDUCTOR EQUIPMENT
发明人： LOW RUSSELL J , OLSON JOSEPH C , TIMBERLAKE DAVID R , MCLANE JAMES R , SAUNDERS MARK D , CUMMINGS JAMES J , CALLAHAN THOMAS B , ENGLAND JONATHAN
IPC分类号： H01J37/317 , H01J37/304
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/30455 , H01J2237/31761 , Y10S438/961
摘要： An ion implanter includes a source (12) of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station (18) that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation- resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer. The operating parameter may be an output voltage of an extraction power supply, or other voltages and/or currents of beamline components that affect the path of the ion beam.
摘要翻译：离子注入机包括固定的平面离子束的源（12），一组束线分量，其通过由第一操作参数值确定的沿正常光束路径引导离子束;终端台（18），其机械地扫描晶片穿过正常光束路径，以及控制电路，其在注入期间响应于离子束中的毛刺，以（1）立即将至少一个束线分量的操作参数改变为第二值，以将离子束远离通常的光束路径，从而在晶片上的注入转变位置处停止注入，（2）随后将晶片移动到晶片上的注入转变位置直接位于离子束的正常路径上的注入恢复位置，和（3）将操作参数返回到其第一值以引导沿着正常光束路径的离子束并且在晶片上的注入转变位置处恢复离子注入。操作参数可以是提取电源的输出电压，或影响离子束路径的束线组件的其他电压和/或电流。

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