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11. 发明申请

WO2012036001A1 MEMORY DEVICE 审中-公开
标题翻译：内存设备
公开(公告)号：WO2012036001A1
公开(公告)日：2012-03-22
申请号：PCT/JP2011/070095
申请日：2011-08-30
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , KOYAMA, Jun , YAMAZAKI, Shunpei
发明人： KOYAMA, Jun , YAMAZAKI, Shunpei
IPC分类号： H01L21/8242 , H01L27/108 , H01L29/786
CPC分类号： G11C11/407 , G11C5/025 , G11C8/08 , G11C11/404 , G11C11/4097
摘要： In a memory device, memory capacity per unit area is increased while a period in which data is held is ensured. The memory device includes a driver circuit provided over a substrate, and a plurality of memory cell arrays which are provided over the driver circuit and driven by the driver circuit. Each of the plurality of memory cell arrays includes a plurality of memory cells. Each of the plurality of memory cells includes a first transistor including a first gate electrode overlapping with an oxide semiconductor layer, and a capacitor including a source electrode or a drain electrode, a first gate insulating layer, and a conductive layer. The plurality of memory cell arrays is stacked to overlap. Thus, in the memory device, memory capacity per unit area is increased while a period in which data is held is ensured.
摘要翻译：在存储装置中，确保了保持数据的期间的每单位面积的存储容量。存储器件包括设置在衬底上的驱动器电路和设置在驱动器电路上并由驱动器电路驱动的多个存储单元阵列。多个存储单元阵列中的每一个包括多个存储单元。多个存储单元中的每一个包括第一晶体管，其包括与氧化物半导体层重叠的第一栅电极，以及包括源电极或漏电极，第一栅绝缘层和导电层的电容器。堆叠多个存储单元阵列以重叠。因此，在存储装置中，确保了保持数据的期间的每单位面积的存储容量。

12. 发明申请

WO2011122312A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME 审中-公开
标题翻译：液晶显示装置及其驱动方法
公开(公告)号：WO2011122312A1
公开(公告)日：2011-10-06
申请号：PCT/JP2011/055859
申请日：2011-03-07
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , KOYAMA, Jun , YAMAZAKI, Shunpei
发明人： KOYAMA, Jun , YAMAZAKI, Shunpei
IPC分类号： G02F1/1368 , G02F1/133 , G09G3/20 , G09G3/36
CPC分类号： G09G3/342 , G09G3/3659 , G09G3/3677 , G09G3/3688 , G09G2300/0842 , G09G2310/0235 , G09G2310/024
摘要： To increase the frequency of input of image signals, a pixel portion of a liquid crystal display device is divided into a plurality of regions, and input of image signals is controlled in each of the plurality of regions. As a result, a plurality of scan lines can be selected at the same time in the liquid crystal display device. That is, in the liquid crystal display device, image signals can be simultaneously supplied to pixels placed in a plurality of rows, among pixels arranged in matrix. Thus, the frequency of input of an image signal to each pixel can be increased without change in response speed of a transistor or the like included in the liquid crystal display device.
摘要翻译：为了增加图像信号的输入频率，液晶显示装置的像素部分被划分为多个区域，并且在多个区域中的每个区域中控制图像信号的输入。结果，可以在液晶显示装置中同时选择多条扫描线。也就是说，在液晶显示装置中，图像信号可以同时提供给排列成矩阵的像素中的多行中的像素。因此，可以在不改变包括在液晶显示装置中的晶体管等的响应速度的情况下增加对每个像素的图像信号的输入频率。

13. 发明申请

WO2011105310A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011105310A1
公开(公告)日：2011-09-01
申请号：PCT/JP2011/053619
申请日：2011-02-15
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
IPC分类号： H01L27/105 , G11C11/405 , H01L21/8242 , H01L21/8247 , H01L27/108 , H01L27/115 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： H01L27/105 , G11C11/24 , H01L27/1052 , H01L27/108 , H01L27/10808 , H01L27/1156 , H01L27/1225 , H01L28/60
摘要： A semiconductor device including a non-volatile memory cell including a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor is provided. Data is written or rewritten to the memory cell by turning on the writing transistor and supplying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected to each other, and then turning off the writing transistor so that the predetermined amount of charge is held in the node. Further, when a transistor whose threshold voltage is controlled and set to a positive voltage is used as the reading transistor, a reading potential is a positive potential.
摘要翻译：提供一种半导体器件，包括包括包括氧化物半导体的写入晶体管，包括与写入晶体管不同的半导体材料的读取晶体管的非易失性存储单元和电容器。通过接通写入晶体管并向写入晶体管的源极（或漏极），电容器的一个电极和读取电极的节点提供数据，从而将数据写入或重写到存储单元晶体管彼此电连接，然后关闭写入晶体管，使得预定量的电荷保持在节点中。此外，当将阈值电压被控制并设置为正电压的晶体管用作读取晶体管时，读取电位为正电位。

14. 发明申请

WO2011089849A1 PORTABLE ELECTRONIC DEVICE 审中-公开
标题翻译：便携式电子设备
公开(公告)号：WO2011089849A1
公开(公告)日：2011-07-28
申请号：PCT/JP2010/073890
申请日：2010-12-27
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun
IPC分类号： H02J7/00 , G02F1/133 , G06F1/26 , G09F9/00 , G09G3/20 , G09G3/36 , H01L21/8242 , H01L21/8247 , H01L27/108 , H01L27/115 , H01L29/786 , H01L29/788 , H01L29/792 , H02J17/00 , H04M1/02
CPC分类号： G06F1/1635 , G06F1/1626 , G06F1/1637 , G06F1/263 , H01L29/786
摘要： A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.
摘要翻译：提供即使在通过电磁感应的非接触充电提供的电力低的情况下也能够操作的便携式电子设备。便携式电子设备包括反射型液晶显示器，其包括具有氧化物半导体的晶体管，包括能够通过非接触电荷充电的可再充电电池的电源部分和包括非易失性半导体存储器件的信号处理部分。在便携式电子装置中，存储在可再充电电池中的电力用于反射型液晶显示器和信号处理部分。

15. 发明申请

WO2011086847A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011086847A1
公开(公告)日：2011-07-21
申请号：PCT/JP2010/073643
申请日：2010-12-20
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
IPC分类号： H01L27/105 , C23C14/08 , H01L21/8234 , H01L21/8242 , H01L21/8247 , H01L27/08 , H01L27/088 , H01L27/10 , H01L27/108 , H01L27/115 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： H01L27/10805 , G11C5/063 , G11C11/403 , G11C11/405 , G11C16/02 , H01L27/11521 , H01L27/1156 , H01L27/1207 , H01L27/1225 , H01L28/60
摘要： An object is to provide a semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and does not have a limitation on the number of times of writing operations. A semiconductor device includes a source-bit line, a first signal line, a second signal line, a word line, and a memory cell connected between the source-bit lines. The memory cell includes a first transistor, a second transistor, and a capacitor. The second transistor is formed including an oxide semiconductor material. A gate electrode of the first transistor, one of a source and drain electrodes, and one of electrodes of the capacitor are electrically connected to one another. The source-bit line and a source electrode of the first transistor are electrically connected to each other. Another source-bit line adjacent to the above source-bit line and a drain electrode of the first transistor are electrically connected to each other.
摘要翻译：目的是提供一种具有新颖结构的半导体器件，其中即使在未提供电力的情况下也可以保留存储的数据，并且对写入操作的次数没有限制。半导体器件包括源极线，第一信号线，第二信号线，字线和连接在源极线之间的存储单元。存储单元包括第一晶体管，第二晶体管和电容器。形成包括氧化物半导体材料的第二晶体管。第一晶体管的栅极，源极和漏极之一以及电容器的电极中的一个彼此电连接。第一晶体管的源极线和源电极彼此电连接。与上述源极线相邻的另一个源极线和第一晶体管的漏极彼此电连接。

16. 发明申请

WO2011086846A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011086846A1
公开(公告)日：2011-07-21
申请号：PCT/JP2010/073642
申请日：2010-12-20
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
IPC分类号： H01L21/8247 , G11C11/402 , G11C11/405 , H01L21/8242 , H01L27/108 , H01L27/115 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： G11C11/409 , G11C11/404 , G11C16/02
摘要： An object is to provide a semiconductor device in which stored data can be retained even when power is not supplied, and there is no limitation on the number of write cycles. The semiconductor device includes a source line, a bit line, a first signal line, a second signal line, a word line, a memory cell connected between the source line and the bit line, a first driver circuit electrically connected to the bit line, a second driver circuit electrically connected to the first signal line, a third driver circuit electrically connected to the second signal line, and a fourth driver circuit electrically connected to the word line and the source line. The first transistor is formed using a semiconductor material other than an oxide semiconductor. The second transistor is formed using an oxide semiconductor material.
摘要翻译：目的在于提供一种半导体器件，其中即使在未提供电源的情况下也可以保留存储的数据，并且对写入周期的数量没有限制。半导体器件包括源极线，位线，第一信号线，第二信号线，字线，连接在源极线和位线之间的存储单元，电连接到位线的第一驱动器电路，电连接到第一信号线的第二驱动电路，与第二信号线电连接的第三驱动电路，和电连接到字线和源极线的第四驱动电路。第一晶体管使用除氧化物半导体之外的半导体材料形成。第二晶体管使用氧化物半导体材料形成。

17. 发明申请

WO2011081008A1 LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE 审中-公开
标题翻译：液晶显示器件和电子器件
公开(公告)号：WO2011081008A1
公开(公告)日：2011-07-07
申请号：PCT/JP2010/072312
申请日：2010-12-07
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , HIRAKATA, Yoshiharu
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , HIRAKATA, Yoshiharu
IPC分类号： G09G3/36 , G02F1/133 , G02F1/13357 , G02F1/1343 , G09G3/20 , G09G3/34
CPC分类号： G02F1/133555 , G09G3/3406 , G09G3/3413 , G09G3/3648 , G09G2300/0456 , G09G2310/0235 , G09G2320/0247 , G09G2320/0261 , G09G2320/103 , G09G2330/021 , G09G2340/0435 , G09G2340/06 , G09G2360/144
摘要： An object is to provide a liquid crystal display device in which image display can be recognized even in an environment where light is dim around the liquid crystal display device. Another object is to provide a liquid crystal display device capable of image display in both modes of a reflective mode in which external light is used as a light source and a transmissive mode in which a backlight is used. One pixel is provided with a pixel electrode having both of a region where light incident through a liquid crystal layer is reflected and a region having a light-transmitting property, so that image display can be performed in both modes of a reflective mode in which external light is used as a light source and a transmissive mode in which a backlight is used.
摘要翻译：本发明的目的是提供一种液晶显示装置，其中即使在液晶显示装置周围光线较暗的环境中也能够识别图像显示。另一个目的是提供一种能够以使用外部光作为光源的反射模式和使用背光的透射模式的两种模式中的图像显示的液晶显示装置。一个像素设置有像素电极，其具有通过液晶层入射的光被反射的区域和具有透光特性的区域，使得可以在反射模式的两种模式中执行图像显示，其中外部光用作光源和使用背光的透射模式。

18. 发明申请

WO2011077926A1 DISPLAY DEVICE AND ELECTRONIC DEVICE 审中-公开
标题翻译：显示设备和电子设备
公开(公告)号：WO2011077926A1
公开(公告)日：2011-06-30
申请号：PCT/JP2010/071624
申请日：2010-11-26
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , KOYAMA, Jun
发明人： KOYAMA, Jun
IPC分类号： G09G3/36 , G02F1/133 , G02F1/1368 , G09G3/20
CPC分类号： G09G3/3648 , G09G3/2025 , G09G3/2081 , G09G2320/0214
摘要： Multiple gray levels are expressed in a display device. The display device includes a pixel portion where pixels including transistors and display elements are arranged in matrix, a gate driver electrically connected to a gate of the transistor, a source driver electrically connected to a source or a drain of the transistor, and a data processing circuit which outputs a signal to the source driver. The transistor includes an oxide semiconductor. In the data processing circuit, n-bit digital data of input m-bit digital data (m and n are positive integers, where m > n) is used for voltage gradation and (m - n) bit digital data is used for time gradation.
摘要翻译：在显示设备中表示多个灰度级。显示装置包括像素部分，其中包括晶体管和显示元件的像素被排列成矩阵，栅极驱动器电连接到晶体管的栅极，源极驱动器，电连接到晶体管的源极或漏极，以及数据处理向源驱动器输出信号的电路。晶体管包括氧化物半导体。在数据处理电路中，输入m位数字数据（m和n为正整数，其中m> n）的n位数字数据用于电压灰度，（m-n）位数字数据用于时间分级。

19. 发明申请

WO2011058913A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2011058913A1
公开(公告)日：2011-05-19
申请号：PCT/JP2010/069540
申请日：2010-10-27
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun
IPC分类号： H01L29/786 , H01L21/28 , H01L21/336 , H01L21/8234 , H01L27/088 , H01L29/417
CPC分类号： H01L27/1207 , H01L21/8221 , H01L27/0688 , H01L27/1225 , H01L29/24
摘要： An object is to provide a semiconductor device with a novel structure. A semiconductor device includes a first transistor, which includes a channel formation region provided in a substrate including a semiconductor material, impurity regions, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode, and a second transistor, which includes an oxide semiconductor layer over the substrate including the semiconductor material, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode. The second source electrode and the second drain electrode include an oxide region formed by oxidizing a side surface thereof, and at least one of the first gate electrode, the first source electrode, and the first drain electrode is electrically connected to at least one of the second gate electrode, the second source electrode, and the second drain electrode.
摘要翻译：目的是提供具有新颖结构的半导体器件。半导体器件包括第一晶体管，其包括设置在包括半导体材料的衬底中的沟道形成区域，杂质区域，第一栅极绝缘层，第一栅极电极和第一源极电极以及第一漏极电极，第二晶体管，其包括在包括半导体材料的衬底上的氧化物半导体层，第二源电极和第二漏电极，第二栅极绝缘层和第二栅电极。第二源电极和第二漏极包括通过氧化其侧表面而形成的氧化物区域，并且第一栅电极，第一源电极和第一漏极电极中的至少一个电连接到第二栅电极，第二源电极和第二漏电极。

20. 发明申请

WO2011055669A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011055669A1
公开(公告)日：2011-05-12
申请号：PCT/JP2010/069120
申请日：2010-10-21
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
IPC分类号： H01L21/8242 , H01L21/8247 , H01L27/108 , H01L27/115 , H01L29/786
CPC分类号： G11C7/12 , G11C11/24 , G11C11/405 , G11C2211/4016 , H01L27/0688 , H01L27/105 , H01L27/1108 , H01L27/11551 , H01L27/1156 , H01L27/1225
摘要： An object is to provide a semiconductor device having a novel structure. A first wiring; a second wiring; a third wiring, a fourth wiring; a first transistor including a first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second gate electrode, a second source electrode, and a second drain electrode are included. The first transistor is provided over a substrate including a semiconductor material and a second transistor includes an oxide semiconductor layer.
摘要翻译：目的在于提供一种具有新颖结构的半导体器件。第一个接线第二布线第三布线，第四布线; 第一晶体管，包括第一栅极电极，第一源极电极和第一漏极电极; 包括第二晶体管，包括第二栅电极，第二源电极和第二漏电极。第一晶体管设置在包括半导体材料的衬底上，并且第二晶体管包括氧化物半导体层。

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