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11. 发明申请

WO2008139392A3 DC-TO-DC CONVERTER COMPRISING A RECONFIGURABLE CAPACITOR UNIT 审中-公开
标题翻译：包含可重构电容单元的DC-DC转换器
公开(公告)号：WO2008139392A3
公开(公告)日：2009-02-05
申请号：PCT/IB2008051823
申请日：2008-05-08
申请人： NXP BV , KLOOTWIJK JOHAN H , BERGVELD HENDRIK J , ROOZEBOOM FREDDY , REEFMAN DERK , RUIGROK JAAP
发明人： KLOOTWIJK JOHAN H , BERGVELD HENDRIK J , ROOZEBOOM FREDDY , REEFMAN DERK , RUIGROK JAAP
IPC分类号： H02M3/07 , H01L27/08
CPC分类号： H01L27/0805 , H02M3/07
摘要： The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A switching unit is provided that comprises a plurality of switching elements electrically interconnected between different capacitor-electrode layers of the trench filling. A control unit is connected with the switching unit and configured to generate and provide to the switching unit respective control signals for forming a respective one of a plurality of multi-capacitor configurations using the capacitor-electrode layers of the trench filling.
摘要翻译：本发明涉及一种包括半导体衬底中的沟槽的可配置沟槽多电容器器件。沟槽的横向延伸超过10微米，沟槽填充物包括多个至少四个导电电容器电极层。提供一种开关单元，其包括在沟槽填充物的不同电容器 - 电极层之间电连接的多个开关元件。控制单元与开关单元连接，并且被配置为使用沟槽填充的电容器电极层，生成并向开关单元提供各自的控制信号，以形成多个多电容器配置中的相应一个。

12. 发明申请

WO2007132423A3 ASSEMBLY, CHIP AND METHOD OF OPERATING 审中-公开
标题翻译：组装，芯片和操作方法
公开(公告)号：WO2007132423A3
公开(公告)日：2008-02-28
申请号：PCT/IB2007051821
申请日：2007-05-14
申请人： NXP BV , REEFMAN DERK , ROOZEBOOM FREDDY , KLOOTWIJK JOHAN H
发明人： REEFMAN DERK , ROOZEBOOM FREDDY , KLOOTWIJK JOHAN H
IPC分类号： H01L23/522 , H01L23/538 , H01L23/552 , H01L25/16 , H01L27/088
CPC分类号： H01L27/0805 , H01L23/3107 , H01L23/3128 , H01L23/4334 , H01L23/49575 , H01L23/5223 , H01L23/5227 , H01L23/642 , H01L23/645 , H01L25/16 , H01L2224/05571 , H01L2224/05573 , H01L2224/056 , H01L2224/16 , H01L2924/01087 , H01L2924/1461 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00014
摘要： The chip (100) comprises a network of trench capacitors (102) and an inductor (114), wherein the trench capacitors (102) are coupled in parallel with a pattern of interconnects (113A,B,..) that is designed so as to limit generation of eddy current induced by the inductor (114) in the interconnects (113A,B,..). This allows the use of the chip (100) as a portion of a DC-DC converter, that is integrated in an assembly of a first chip and this - second chip (100). The inductor of this integrated DC-DC converter may be defined elsewhere within the assembly.
摘要翻译：芯片（100）包括沟槽电容器（102）和电感器（114）的网络，其中沟槽电容器（102）与互连图案（113A，B，...）并联耦合，该图案被设计为以限制由互连（113A，B，...）中的电感器（114）感应的涡流的产生。这允许使用芯片（100）作为DC-DC转换器的一部分，其集成在第一芯片和该第二芯片（100）的组件中。该集成DC-DC转换器的电感器可以在组件内的其他地方定义。

13. 发明申请

WO2010001339A3 PLANAR, MONOLITHICALLY INTEGRATED COIL 审中-公开
标题翻译：平面，单片集成线圈
公开(公告)号：WO2010001339A3
公开(公告)日：2010-02-25
申请号：PCT/IB2009052836
申请日：2009-06-30
申请人： NXP BV , ROOZEBOOM FREDDY , REEFMAN DERK , KLOOTWIJK JOHAN HENDRIK , TIEMEIJER LUKAS FREDERIK , RUIGROK JAAP
发明人： ROOZEBOOM FREDDY , REEFMAN DERK , KLOOTWIJK JOHAN HENDRIK , TIEMEIJER LUKAS FREDERIK , RUIGROK JAAP
IPC分类号： H01F27/36
CPC分类号： H01F17/0006 , H01F27/365 , H01F2017/0066 , H01F2017/008
摘要： The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. Inmany applications, high-value inductors are a necessity. In particular, this holds for applications in power management. In these applications, the inductors are at least 5 of the order of 1 µH, and must have an equivalent series resistance of less than 0.1 O. For this reason, those inductors are always bulky components, of a typical size of 2 x 2 x 1 mm 3, which make a fully integrated solution impossible. On the other hand, integrated inductors, which can monolithically be integrated, do exist. However, these inductors suffer either from low inductance values, or 10 veryhigh DC resistance values.
摘要翻译：本发明提供了一种在硅上集成平面线圈同时提供高电感的方法。这种高电感通过材料的特殊的背面和前面屏蔽来实现。不可多得的应用，高价值感应器是必须的。特别地，这适用于电力管理的应用。在这些应用中，电感器的电阻值至少为1μH左右，并且必须具有小于0.1 O的等效串联电阻。因此，这些电感器总是体积大的组件，典型尺寸为2 x 2 x 1 mm 3，这使得完全集成的解决方案不可能。另一方面，确实存在可以整体集成的集成电感器。然而，这些电感器受到低电感值或10个非常高的直流电阻值的影响。

14. 发明申请

WO2007054858A3 INTEGRATED CAPACITOR ARRANGEMENT FOR ULTRAHIGH CAPACITANCE VALUES 审中-公开
标题翻译：集成电容器布置ULTRAHIGH电容值
公开(公告)号：WO2007054858A3
公开(公告)日：2007-09-27
申请号：PCT/IB2006054063
申请日：2006-11-02
申请人： NXP BV , ROOZEBOOM FREDDY , KLOOTWIJK JOHAN H , KEMMEREN ANTONIUS L A M , REEFMAN DERK , VERHOEVEN JOHANNES F C M
发明人： ROOZEBOOM FREDDY , KLOOTWIJK JOHAN H , KEMMEREN ANTONIUS L A M , REEFMAN DERK , VERHOEVEN JOHANNES F C M
IPC分类号： H01L21/02
CPC分类号： H01L28/91 , H01L27/0805 , H01L27/1087 , H01L29/945
摘要： The present invention relates to an electronic device (300) comprising at least one trench capacitor (302) that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence (308) of at least two dielectric layers (312, 316) and at least two electrically conductive layers (314, 318) is provided in the trench capacitor or on the pillar capacitor, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers. A set of internal contact pads (332, 334, 340) is provided, and each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate. By providing an individual internal contact pad for each of the electrically conductive layers, a range of switching opportunities is opened up that allows tuning the specific capacitance of the capacitor to a desired value. The electronic device of the invention thus provides a flexible trench-capacitor manufacturing platform for a multitude of combinations of electrically conductive layers with each other, or, when multiple trenches are used, between electrically conductive layers of different trench capacitors. On-chip applications such as a charge-pump circuit or a DC-to-DC voltage converter are claimed that benefit from the ultra-high capacitance density and the high breakdown voltage that can be achieved with the electronic device of the invention.
摘要翻译：电子设备技术领域本发明涉及一种电子设备（300），其包括至少一个也可采取反向结构形式的沟槽电容器（302），立柱电容器。至少两个电介质层（312,316）和至少两个导电层（314,318）的交替层序列（308）设置在所述沟槽电容器中或所述柱状电容器上，使得所述至少两个导电层通过至少两个电介质层中的相应电极彼此电隔离并且与衬底电隔离。提供一组内部接触焊盘（332,334,340），并且每个内部接触焊盘与相应的一个导电层或与基板连接。通过为每个导电层提供单独的内部接触焊盘，开启一定范围的切换机会，允许将电容器的比电容调谐到期望值。因此，本发明的电子器件为不同沟槽电容器的导电层之间的多个导电层的组合或多个沟槽组合提供了柔性的沟槽电容器制造平台。要求使用诸如电荷泵电路或DC-DC电压转换器的片上应用，其受益于本发明的电子器件可实现的超高电容密度和高击穿电压。

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