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    • 12. 发明申请
    • HIGH RESOLUTION AUTO-TUNING FOR A VOLTAGE CONTROLLED OSCILLATOR
    • 高分辨率自动调谐电压控制振荡器
    • WO2007055870A3
    • 2007-07-05
    • PCT/US2006040284
    • 2006-10-13
    • SKYWORKS SOLUTIONS INCWANG HUARIPLEY DAVID SROLL BRYAN J
    • WANG HUARIPLEY DAVID SROLL BRYAN J
    • H03L7/02
    • H03L7/0992H03L7/099H03L7/10H03L7/18H03L7/187H03L7/193
    • According to one exemplary embodiment, an auto-tuning circuit (1 04) coupled to a voltage controlled oscillator (102) in a phase locked loop, where the voltage controlled oscillator is coupled to a capacitor array (105), includes a prescaler circuit (106) configured to provide a divided voltage controlled oscillator frequency, where the prescaler circuit is used in the phase locked loop during fine tunin of the voltage controlled oscillator in the auto-tuning circuit during coarse tuning of the voltage controlled oscillator. The auto-tuning circuit further includes a digital processing logic circuit (108) coupled to the prescaler circuit and configured to determine a capacitance of the capacitor array by comparing comp-cnt to a pre-determined value, where comp-cnt is determined by a number of cycles of the divided voltage controlled oscillator frequency that occur in a calibration interval.
    • 根据一个示例性实施例,耦合到锁相环中的压控振荡器(102)的自调谐电路(104),其中压控振荡器耦合到电容器阵列(105),包括预分频器电路 106),其被配置为提供分压控制的振荡器频率,其中在电压控制振荡器的粗调谐期间,在自整定电路中的压控振荡器的微调中,预分频器电路用于锁相环。 自动调谐电路还包括耦合到预分频器电路的数字处理逻辑电路(108),并且被配置为通过将compCnt与预定值进行比较来确定电容器阵列的电容,其中comp由c 在校准间隔中发生的分压电压振荡器频率的周期数。
    • 15. 发明申请
    • A FREQUENCY-SHIFT CMOS MAGNETIC BIOSENSOR ARRAY WITH SINGLE BEAD SENSITIVITY AND NO EXTERNAL MAGNET
    • 频率移动CMOS磁性生物传感器阵列,具有单根光纤灵敏度,无外部磁铁
    • WO2010031016A3
    • 2010-06-17
    • PCT/US2009056887
    • 2009-09-15
    • CALIFORNIA INST OF TECHNWANG HUAHAJIMIRI SEYED ALI
    • WANG HUAHAJIMIRI SEYED ALI
    • G01N33/48
    • G01N27/745G01N33/54326G01N33/5438
    • According to one aspect, an integrated magnetic particle measurement device for detecting a presence or absence of magnetic particles in a sample volume includes at least one sensor cell having a differential sensor pair. An active sensor oscillator frequency is responsive to one or more magnetic particles situated within a sample volume. The sensor cell is configured to be operative in the absence of an externally applied magnetic field. A frequency measurement circuit provides as a time-multiplexed output a first count representative of the active sensor oscillator frequency and a second count representative of the reference sensor oscillator frequency. A calculated difference between the first count and the second count is indicative of a presence or an absence of one or more magnetic particles within the sample volume. An integrated magnetic particle measurement system array and a method for detecting one or more magnetic particles are also described.
    • 根据一个方面,用于检测样品体积中磁性颗粒存在或不存在的集成磁性颗粒测量装置包括至少一个具有差分传感器对的传感器单元。 主动传感器振荡器频率响应于位于样品体积内的一个或多个磁性颗粒。 传感器单元被配置为在没有外部施加的磁场的情况下操作。 频率测量电路提供代表有源传感器振荡器频率的第一计数的时间复用输出和表示参考传感器振荡器频率的第二计数。 第一计数和第二计数之间的计算差异表示样品体积内存在或不存在一个或多个磁性颗粒。 还描述了集成磁性粒子测量系统阵列和用于检测一个或多个磁性粒子的方法。
    • 16. 发明申请
    • EFFECTIVE-INDUCTANCE-CHANGE BASED MAGNETIC PARTICLE SENSING
    • 基于有效电感变化的磁性粒子感测
    • WO2009148668A3
    • 2010-03-04
    • PCT/US2009036368
    • 2009-03-06
    • CALIFORNIA INST OF TECHNWANG HUAHAJIMIRI SEYED ALICHEN YAN
    • WANG HUAHAJIMIRI SEYED ALICHEN YAN
    • G01N27/72G01N27/00G01R33/02
    • G01R33/1269
    • The invention relates to an integrated measurement system to detect a quantity of magnetic particles in a sample. The measurement system includes a substrate. An electromagnetic (EM) structure disposed on the surface of the substrate is configured to receive a sample including the magnetic particles in proximity thereof. The integrated measurement system also includes an electrical current generator disposed on the surface of the substrate which is electro-magnetically coupled to the EM structure. The electrical current generator is configured to cause an electrical current to flow in the EM structure. The integrated measurement system also includes an effective inductance sensor disposed on the surface of the substrate which is configured to measure a selected one of an effective inductance and a change in effective inductance. The invention also relates to a method to determine the number of and/or the locations of the magnetic particles in a sample.
    • 本发明涉及一种用于检测样品中的磁性颗粒的量的综合测量系统。 测量系统包括基板。 设置在基板的表面上的电磁(EM)结构被配置为接收包括邻近的磁性颗粒的样品。 集成测量系统还包括设置在基板的表面上的电流发生器,其电磁耦合到EM结构。 电流发生器被配置为使得电流在EM结构中流动。 集成测量系统还包括设置在衬底的表面上的有效电感传感器,其被配置为测量有效电感和有效电感的变化中选定的一个。 本发明还涉及确定样品中磁性颗粒数量和/或位置的方法。
    • 20. 发明申请
    • DEVICES AND METHODOLOGIES RELATED TO CMOS RF
    • 与CMOS射频相关的器件和方法
    • WO2011156289A3
    • 2012-03-15
    • PCT/US2011039328
    • 2011-06-06
    • SKYWORKS SOLUTIONS INCHOMOL DAVID KPRATT RYAN MWANG HUA
    • HOMOL DAVID KPRATT RYAN MWANG HUA
    • H01L27/092H01L21/768H01L27/00
    • H03F3/72G05F1/468G05F1/565G05F1/575H01L27/0928H01L29/0611H02M3/1584H03F1/0261H03F1/34H03F1/56H03F3/19H03F3/195H03F3/211H03F3/217H03F3/245H03F2200/18H03F2200/411H03F2200/451H03F2203/21131H03F2203/21139H03F2203/7215H03G3/30H03G3/3042H03H11/30H03K17/6872H04B1/40Y10T307/406
    • Disclosed are high linearity CMOS-based devices capable of passing large signal and quiescent power amplifier current for switching radio frequency (RF) signals, and methods for biasing such devices. In certain RF devices such as mobile phones, providing different amplification modes can yield performance advantages. For example, a capability to transmit at low and high power modes typically results in an extended battery life, since the high power mode can be activated only when needed. Switching between such amplification modes can be facilitated by one or more switches formed in an integrated circuit and configured to route RF signal to different amplification paths. In certain embodiments, such RF switches can be formed as CMOS devices, and can be based on triple-well structures. In certain embodiments, first and second bias voltages applied to an isolated well of such a triple-well structure can be different for first and second states of a switch. In certain embodiments, a bias voltage applied to an isolated well of such a triple-well structure can be substantially tied to a source voltage coupled to source and drain, so as to yield desired performance features such as high amplification linearity even when the source voltage changes. In certain embodiments, a switch can include a first well formed about a source and drain and a second well formed about the first well, and a voltage distribution component can be configured to provide different bias voltages to at least one of the first and second wells.
    • 公开了能够传递用于切换射频(RF)信号的大信号和静态功率放大器电流的高线性的基于CMOS的器件,以及用于偏置这些器件的方法。 在诸如移动电话的某些RF设备中,提供不同的放大模式可以产生性能优点。 例如,在低功率和高功率模式下传输的能力通常会导致延长的电池寿命,因为只有在需要时才能激活高功率模式。 在集成电路中形成的一个或多个开关可以方便地在这种放大模式之间进行切换,并且将RF信号路由到不同的放大路径。 在某些实施例中,这样的RF开关可以形成为CMOS器件,并且可以基于三阱结构。 在某些实施例中,施加到这种三阱结构的隔离阱的第一和第二偏置电压对于开关的第一和第二状态可以是不同的。 在某些实施例中,施加到这种三阱结构的隔离阱的偏置电压可以基本上连接到耦合到源极和漏极的源极电压,以便产生期望的性能特征,例如高放大线性度,即使当源电压 变化。 在某些实施例中,开关可以包括绕源极和漏极形成的第一阱和围绕第一阱形成的第二阱,并且电压分布组件可以被配置为向第一阱和第二阱中的至少一个提供不同的偏置电压 。