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11. 发明申请

WO2003056619A3 SELECTIVE DEPOSITION OF A BARRIER LAYER ON A DIELECTRIC MATERIAL 审中-公开
公开(公告)号：WO2003056619A3
公开(公告)日：2003-07-10
申请号：PCT/US2002/040179
申请日：2002-12-17
申请人： APPLIED MATERIALS, INC.
发明人： CHUNG, Hua , CHEN, Ling , KU, Vincent, W. , YANG, Michael, X. , YAO, Gongda
IPC分类号： H01L21/3205
摘要： A method to selectively deposit a barrier layer on dielectric material that surrounds one or more metal interconnects on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the dielectric material formed on the substrate in a process chamber.

12. 发明申请

WO2003044242A2 ATOMIC LAYER DEPOSITION OF COPPER USING A REDUCING GAS AND NON-FLUORINATED COPPER PRECURSORS 审中-公开
标题翻译：使用减少气体和非氟化铜前体的铜的原子层沉积
公开(公告)号：WO2003044242A2
公开(公告)日：2003-05-30
申请号：PCT/US2002/036713
申请日：2002-11-15
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Ling , CHANG, Mei
IPC分类号： C23C16/18
CPC分类号： H01L21/76877 , C23C16/18 , C23C16/4402 , C23C16/45553 , H01L21/28562 , H01L21/7681 , Y10S438/905
摘要： Methods of forming copper films by sequentially introducing and then reacting nitrogen containing analogs of Copper II ß-diketonates which analogs are more stable source reagents for copper deposition. The nitrogen containing analogs replace -O- with -N(R")- wherein R" is an alkyl group having from one to four carbon atoms. Replacement of each -O- is preferred although replacement of one -O- per cyclic ring is sufficient to improve stability of the copper source reagents. The source reagent can be purified by sublimation to remove solvents and excess ligands prior to semiconductor processing. The processing chamber is preferably a cyclical deposition chamber maintained at a pressure of less than about 10 Torr and the substrate is maintained at a temperature of about 50 to about 200 °C.
摘要翻译：通过依次引入并随后使含有二价铜的β-二酮的类似物的铜反应形成铜膜的方法，该类似物是用于铜沉积的更稳定的源试剂。含氮类似物用-N（R“）取代-O-，其中R”是具有1-4个碳原子的烷基。每个-O-的替代是优选的，尽管每个环的一个-O-取代足以提高铜源试剂的稳定性。源试剂可以通过升华纯化，以在半导体加工之前除去溶剂和过量的配体。处理室优选是保持在小于约10托的压力下的循环沉积室，并且基板保持在约50至约200℃的温度。

13. 发明申请

WO2003028091A2 COPPER INTERCONNECT BARRIER LAYER STRUCTURE AND FORMATION METHOD 审中-公开
标题翻译：铜互连障碍层结构与形成方法
公开(公告)号：WO2003028091A2
公开(公告)日：2003-04-03
申请号：PCT/US2002/029954
申请日：2002-09-20
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Ling , GANGULI, Seshadri , MARCADAL, Christophe , WEI, Cao , MOSELY, Roderick, C. , CHANG, Mei
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a tungsten-containing copper interconnect barrier layer (e.g., a tungsten [W] or tungsten-nitride [W x N] copper interconnect barrier layer) on a substrate with a high (e.g., greater than 30%) sidewall step coverage and ample adhesion to underlying dielectric layers. The method includes first depositing a thin titanium-nitride (TiN) or tantalum nitride (TaN) nucleation layer on the substrate, followed by the formation of a tungsten-containing copper interconnect barrier layer (e.g., a W or W x N copper interconnect barrier layer) overlying the substrate. The tungsten-containing copper interconnect barrier layer can, for example, be formed using a Chemical Vapor Deposition (CVD) technique that employs a fluorine-free tungsten-containing gas (e.g., tungsten hexacarbonyl [W(CO) 6 ]) or a WF 6 -based Atomic Layer Deposition (ALD) technique. The presence of a thin TiN (or TaN) nucleation layer facilitates the formation of a tungsten-containing copper interconnect barrier layer with a sidewall step coverage of greater than 30% and ample adhesion to dielectric layers. A copper interconnect barrier layer structure includes a thin titanium-nitride (TiN) (or tantalum nitride [TaN]) nucleation layer disposed directly on the dielectric substrate (e.g., a single or dual-damascene copper interconnect dielectric substrate). The copper interconnect barrier layer structure also includes a tungsten-containing copper interconnect barrier layer (e.g., a W or W x N copper interconnect barrier layer) formed on the thin TiN (or TaN) nucleation layer using, for example, a CVD technique that employs a fluorine-free tungsten-containing gas (e.g., [W(CO) 6 ]) or a WF 6 -based ALD technique.
摘要翻译：在具有高（例如，大于30％）侧壁台阶覆盖的基底上形成含钨铜互连屏障层（例如，钨[W]或氮化钨[WxN]铜互连阻挡层）的方法，以及充足的粘附到底层电介质层。该方法包括首先在衬底上沉积薄氮化钛（TiN）或氮化钽（TaN）成核层，随后形成含钨铜互连势垒层（例如，W或WxN铜互连阻挡层）覆盖基板。含钨铜互连阻挡层例如可以使用使用无氟含钨气体（例如六羰基钨[W（CO）6]）或WF 6的化学气相沉积（CVD）技术来形成的原子层沉积（ALD）技术。存在薄的TiN（或TaN）成核层有助于形成具有大于30％的侧壁台阶覆盖率和对电介质层的充分粘合性的含钨铜互连屏障层。铜互连势垒层结构包括直接设置在电介质基板（例如，单镶嵌铜互连电介质基板）上的薄氮化钛（TiN）（或氮化钽[TaN]）成核层。铜互连阻挡层结构还包括使用例如CVD技术在薄TiN（或TaN）成核层上形成的含钨铜互连势垒层（例如，W或WxN铜互连阻挡层），其采用无氟含钨气体（例如[W（CO）6]）或基于WF6的ALD技术。

14. 发明申请

WO2002065547A2 METHOD OF OBTAINING LOW TEMPERATURE ALPHA-Ta THIN FILMS USING WAFER BIAS 审中-公开
标题翻译：使用波浪偏移获得低温ALPHA-Ta薄膜的方法
公开(公告)号：WO2002065547A2
公开(公告)日：2002-08-22
申请号：PCT/US2002/002311
申请日：2002-01-25
申请人： APPLIED MATERIALS, INC.
发明人： SUNDARRAJAN, Arvind , RENGARAJAN, Suraj , MILLER, Michael, A. , DING, Peijun , YAO, Gongda , MARCADAL, Christophe , CHEN, Ling
IPC分类号： H01L21/768
CPC分类号： H01L21/76846 , C23C14/024 , C23C14/16 , C23C16/34 , H01L21/2855 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Provided herein is a method of depositing alpha-tantalum film on a semiconductor wafer by depositing a tantalum nitride film on a wafer; and then depositing a tantalum film over the tantalum nitride film using wafer bias. The tantalum film as deposited is in alpha phase. Also provided is a method of depositing Cu barrier and seed layer on a semiconductor wafer, comprising the steps of depositing a tantalum nitride layer on a wafer; depositing a tantalum layer over the tantalum nitride layer using wafer bias, wherein the resulting tantalum barrier layer is in alpha phase; and then depositing Cu seed layer over the alpha-tantalum barrier layer. Further provided is a method of depositing alpha-tantalum film/layer using two-chamber process, wherein the tantalum nitride and subsequently deposited tantalum films/layers can be deposited in two separate chambers, such as IMP or SIP chambers. Still further provided is a method of depositing alpha-tantalum film by depositing PVD tantalum film on CVD films.
摘要翻译：本文提供了一种通过在晶片上沉积氮化钽膜在半导体晶片上沉积α-钽膜的方法; 然后使用晶片偏压在钽氮化物膜上沉积钽膜。沉积的钽膜是α相。还提供了一种在半导体晶片上沉积Cu势垒和种子层的方法，包括以下步骤：在晶片上沉积氮化钽层; 使用晶片偏置在钽氮化物层上沉积钽层，其中所得的钽阻挡层是α相; 然后在α-钽阻挡层上沉积Cu籽晶层。进一步提供了一种使用二室工艺沉积α-钽膜/层的方法，其中氮化钽和随后沉积的钽膜/层可以沉积在两个分离的室中，例如IMP或SIP室。还提供了通过在CVD膜上沉积PVD钽膜来沉积α-钽膜的方法。

15. 发明申请

WO2003056619A2 SELECTIVE DEPOSITION OF A BARRIER LAYER ON A DIELECTRIC MATERIAL 审中-公开
标题翻译：电介质材料上的障碍层的选择性沉积
公开(公告)号：WO2003056619A2
公开(公告)日：2003-07-10
申请号：PCT/US2002/040179
申请日：2002-12-17
申请人： APPLIED MATERIALS, INC.
发明人： CHUNG, Hua , CHEN, Ling , KU, Vincent, W. , YANG, Michael, X. , YAO, Gongda
IPC分类号： H01L21/3205
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45525 , H01L21/28562 , H01L21/76844
摘要： A method to selectively deposit a barrier layer on dielectric material that surrounds one or more metal interconnects on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the dielectric material formed on the substrate in a process chamber.
摘要翻译：公开了一种选择性地将阻挡层沉积在围绕衬底上的一个或多个金属互连的电介质材料上的方法。使用包括预定数量的沉积循环，然后进行吹扫步骤的循环沉积工艺，将选择性地沉积在金属膜上。每个沉积循环包括在处理室中在形成在基底上的电介质材料上交替地吸附含难熔金属的前体和还原气体。

16. 发明申请

WO2003050323A1 CYCLICAL DEPOSITION OF REFRACTORY METAL SILICON NITRIDE 审中-公开
标题翻译： REFRACTORY金属硅化合物的循环沉积
公开(公告)号：WO2003050323A1
公开(公告)日：2003-06-19
申请号：PCT/US2002/038684
申请日：2002-12-03
申请人： APPLIED MATERIALS, INC.
发明人： CHUNG, Hua , CHEN, Ling , CHIN, Barry, L.
IPC分类号： C23C16/34
CPC分类号： C23C16/45531 , C23C16/34 , H01L21/28562 , H01L21/76843
摘要： Embodiments of the invention relate to an apparatus and method of cyclical layer deposition utilizing three or more precursors. In one embodiment, the method includes providing at least one cycle of precursors to form a ternary material layer. Providing at least one cycle of precursors includes introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor, wherein the pulses of two of the three precursors are introduced simultaneously or sequentially. In another embodiment, the method includes introducing a pulse of a first precursor, introducing a pulse of a second precursor, repeating the introduction of the first and the second precursors at least one time to form a binary material layer on the substrate surface, and introducing a pulse of a third precursor to form the ternary material layer.
摘要翻译：本发明的实施例涉及利用三种或更多种前体的循环层沉积的装置和方法。在一个实施方案中，该方法包括提供至少一个循环的前体以形成三元材料层。提供至少一个前体循环包括引入第一前体的脉冲，引入第二前体的脉冲和引入第三前体的脉冲，其中三个前体中的两个的脉冲同时或顺序地引入。在另一个实施例中，该方法包括引入第一前体的脉冲，引入第二前体的脉冲，至少一次重复引入第一和第二前体，以在衬底表面上形成二元材料层，并引入形成三元材料层的第三前体的脉冲。

17. 发明申请

WO2003038892A3 ATOMIC-LAYER-DEPOSITED TANTALUM NITRIDE AND ALPHA-PHASE TANTALUM AS BARRIER LAYERS FOR COPPER METALLIZATION 审中-公开
公开(公告)号：WO2003038892A3
公开(公告)日：2003-05-08
申请号：PCT/US2002/034277
申请日：2002-10-25
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Ling , CHUNG, Hua , SEUTTER, Sean, M. , YANG, Michael, X. , YI, Ming , KU, Vincent , WU, Dien-Yeh , OUYE, Alan , NAKASHIMA, Norman , CHIN, Barry , ZHANG, Hong
IPC分类号： H01L21/768
摘要： A method for forming a metal interconnect on a substrate is provided. In one aspect, the method comprises depositing a refractory metal containing barrier layer having a thickness of less than 2nm so as to exhibit a crystalline like structure and is being sufficient to inhibit atomic migration on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound; depositing a seed layer on at least a portion of the barrier layer; and depositing a second metal layer on at least a portion of the seed layer.

18. 发明申请

WO2002103774A1 INTERGRATED BARRIER LAYER STRUCTURE FOR COPPER CONTACT LEVEL METALLIZATION 审中-公开
标题翻译：用于铜接触层级金属化的嵌入式障碍层结构
公开(公告)号：WO2002103774A1
公开(公告)日：2002-12-27
申请号：PCT/US2002/018794
申请日：2002-06-14
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Fusen , CHEN, Ling , YAO, Gongda , XI, Ming , CHIN, Barry , CHANG, Mei , GANGULI, Seshadri , YANG, Michael, X. , YOON, Hyungsuk, Alexander
IPC分类号： H01L21/4763
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28556
摘要： A method of forming a composite barrier layer structure (20, 22) for use in integrated circuits is disclosed. The composite barrier layer structure (20, 22) formed using both physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. The composite barrier layer structure (20, 22) comprises a CVD deposited layer formed on a PVD deposited layer. During the PVD process, the underlying surface of the substrate (11) is treated, reducing the resistivity of the barrier layer structure (20, 22) formed thereon.
摘要翻译：公开了一种形成用于集成电路的复合阻挡层结构（20,22）的方法。使用物理气相沉积（PVD）和化学气相沉积（CVD）技术形成的复合阻挡层结构（20,22）。复合阻挡层结构（20,22）包括形成在PVD沉积层上的CVD沉积层。在PVD工艺期间，处理衬底（11）的下表面，降低其上形成的阻挡层结构（20,22）的电阻率。

19. 发明申请

WO2004007793A2 METHOD AND APPARATUS FOR PROVIDING GAS TO A PROCESSING CHAMBER 审中-公开
标题翻译：用于向加工室提供气体的方法和装置
公开(公告)号：WO2004007793A2
公开(公告)日：2004-01-22
申请号：PCT/US2003/022186
申请日：2003-07-16
申请人： APPLIED MATERIALS, INC.
发明人： GANGULI, Seshadri , CHEN, Ling , KU, Vincent, W.
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a canister having at least one baffle disposed between two ports and containing a precursor material. The precursor material is adapted to produce a gas vapor when heated to a defined temperature at a defined pressure. The baffle forces a carrier gas to travel an extended mean path between the inlet and outlet ports. In another embodiment, an apparatus for generating gas includes a canister having a tube that directs a carrier gas flowing into the canister away from a precursor material disposed within the canister.
摘要翻译：提供了一种用于产生用于处理系统的气体的方法和装置。在一个实施例中，一种用于产生用于处理系统的气体的装置包括：罐，其具有设置在两个端口之间的至少一个挡板并且容纳前体材料。当在限定的压力下加热到限定的温度时，前体材料适于产生气体蒸气。挡板迫使载气在入口和出口之间延伸平均路径。在另一个实施例中，一种用于产生气体的装置包括一个罐，该罐具有一个管，其引导流入罐中的载气远离设置在罐内的前体材料。

20. 发明申请

WO2002091437A3 TISIN BARRIER FORMATION WITH TREATMENT IN N2/H2 PLASMA AND IN SILANE 审中-公开
公开(公告)号：WO2002091437A3
公开(公告)日：2002-11-14
申请号：PCT/US2002/014056
申请日：2002-05-06
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Ling , MARCADAL, Christophe , YOON, Hyungsuk, A.
IPC分类号： H01L21/768
摘要： The present invention provides a method of forming a titanium silicon nitride barrier layer on a semiconductor wafer, comprising the steps of depositing a titanium nitride layer on the semiconductor wafer; plasma-treating the titanium nitride layer in a N 2 /H 2 plasma; and exposing the plasma-treated titanium nitride layer to a silane ambient, wherein silicon is incorporated into the titanium nitride layer as silicon nitride thereby forming a titanium silicon nitride barrier layer. Additionally, there is provided a method of improving the barrier performance of a titanium nitride layer comprising the step of introducing silicon into the titanium nitride layer such that the silicon is incorporated into the titanium nitride layer as silicon nitride. Also provided is a method of integrating copper into a semiconductor device and a method of improving copper wettability at a copper/titanium nitride interface in a semiconductor device.

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