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11. 发明申请

WO2009066979A3 MEMS BASED PROBE CARD AND A METHOD OF TESTING SEMICONDUCTOR ION SENSOR USING THE SAME 审中-公开
公开(公告)号：WO2009066979A3
公开(公告)日：2009-05-28
申请号：PCT/MY2008/000144
申请日：2008-11-20
申请人： MIMOS BERHAD , SYONO, Mohd Ismahadi
发明人： SYONO, Mohd Ismahadi
IPC分类号： H01L21/66 , B81B7/00
摘要： An MEMS based Probe Card (100) for testing integrated circuits at wafer level comprising a printed circuit board (1) in which an opening is formed on a middle portion therethrough; at least two opposing first electrode pad (3) being deposited on a periphery of the printed circuit board (1); and a wafer assembly disposed around the central of the printed circuit board (1) comprising a substrate layer (5) in which an opening is formed on a middle portion therethrough;an insulating layer (7) on the substrate layer (5); at least two opposing second electrode pads (9) in the peripheral region of the insulating layer (7); and a probe pin (11) on each second electrode pad (9), wherein the first electrode pads (3) and the second electrode pads (9) are electrically interconnected by a electrical conductor (13).

12. 发明申请

WO2009057988A2 RADIO FREQUENCY MEMS SWITCH 审中-公开
标题翻译：无线电频率MEMS开关
公开(公告)号：WO2009057988A2
公开(公告)日：2009-05-07
申请号：PCT/MY2008000122
申请日：2008-10-22
申请人： MIMOS BERHAD , SULAIMAN SURAYA , SYONO MOHD ISMAHADI
发明人： SULAIMAN SURAYA , SYONO MOHD ISMAHADI
IPC分类号： H01L29/00 , H01H59/00
CPC分类号： H01H1/0036 , H01G5/18 , H01H59/0009
摘要： There is disclosed a method of fabricating radio frequency surface microelectromechanical (MEMS) switch. The method utilizes four masks, each configured through photolithography process at different stages that resulted in substantially planar silicon dioxide, critical in providing better mechanical performance of the RF MEMS switch. The steps include, among others, depositing silicon on glass liquid to fill small holes for a smooth silicon oxide surface, employing back etch process and performing wet etching by using chemical solution called Pad Etch. An RF MEMS switch that comprise of a lower electrode (30) formed on the surface of a silicon substrate (31), an aluminum membrane (32) suspended over the electrode and a dielectric layer (33) covering the lower electrode fabricated through the process is also disclosed.
摘要翻译：公开了一种制造射频表面微机电（MEMS）开关的方法。该方法利用四个掩模，每个掩模均通过不同阶段的光刻工艺配置，导致基本平面的二氧化硅，这对于提供RF MEMS开关的更好的机械性能至关重要。其中的步骤包括在玻璃液体上沉积硅以填充平滑氧化硅表面的小孔，采用背面蚀刻工艺并通过使用称为刮板蚀刻的化学溶液进行湿法蚀刻。一种RF MEMS开关，包括形成在硅衬底（31）表面上的下电极（30），悬置在电极上的铝膜（32）和覆盖通过该工艺制造的下电极的介电层（33）也被披露。

13. 发明申请

WO2009045092A2 FULLY INTEGRATED ISFET- VALVELESS MICROPUMP 审中-公开
标题翻译：全面集成的ISFET无阀微型计算机
公开(公告)号：WO2009045092A2
公开(公告)日：2009-04-09
申请号：PCT/MY2008/000117
申请日：2008-09-29
申请人： MIMOS BERHAD , SYONO, Mohd Ismahadi , ABDUL RANI, Rozina , LEE, Hing Wah
发明人： SYONO, Mohd Ismahadi , ABDUL RANI, Rozina , LEE, Hing Wah
IPC分类号： G01N27/333
CPC分类号： F04B19/006 , G01N27/4148
摘要： The present invention relates to a fully integrated ISFET valveless micropump for use as a pH sensor and as a chemical based sensor especially intended for Wireless Sensor Network (WSN) characterized in that wherein the valveless pump with ISFET is embedded along a pump channel and temperature sensors at its inlet and wherein a membrane in the middle is the pump diaphragm and is electrostatically actuated by an electrode above it which is deposited on the glass and wherein when the membrane controlled by a microcontroller is in motion, fluid or gas would be pumped in thru the inlet and travels thru the channel where ISFET is located and out thru the outlet.
摘要翻译：本发明涉及一种完全集成的ISFET无阀微泵，其用作pH传感器和特别用于无线传感器网络（WSN）的基于化学物的传感器，其特征在于，其中具有ISFET的无阀泵是沿着泵通道嵌入并且在其入口处嵌入温度传感器，并且其中在中间的膜片是泵膜片并且由其上方沉积在玻璃上的电极进行静电致动，并且其中当由微控制器控制的膜运动时，流体或气体将通过入口泵入并穿过ISFET所在的通道并通过出口流出。

14. 发明申请

WO2011008070A1 CANTILEVER MICROVALVE STRUCTURE AND METHOD OF FABRICATING SAME 审中-公开
标题翻译： CANTILEVER微型结构及其制造方法
公开(公告)号：WO2011008070A1
公开(公告)日：2011-01-20
申请号：PCT/MY2010/000117
申请日：2010-07-12
申请人： MIMOS BERHAD , LEE, Hing Wah , SYONO, Mohd, Ismahadi , BIEN, Daniel, Chia Seng
发明人： LEE, Hing Wah , SYONO, Mohd, Ismahadi , BIEN, Daniel, Chia Seng
IPC分类号： B81B5/00 , B01L99/00 , B81B3/00 , F16K99/00 , H01L21/00
CPC分类号： F16K99/0001 , F16K99/0013 , F16K99/0057 , F16K2099/008
摘要： A passive microvalve actuated by the deformation of the microvalve structure (20) (such as bending and rotation) due to fluid pressure exerted is disclosed. The deformation of the valve structure (20) directs fluid flow to a desired pathway and reduce occurrence of dead volume. A basic embodiment of our microvalve is comprised in a semiconductor-fabricated body (10) regulating fluid flow between at least a first channel (12) and a second channel (14) in a passive manner, with the microvalve fabricated as an integral cantilever structure (20) comprising a stem (22) with base (24) rigidly affixed to a substrate (15); and at least a lever arm (26) extending at about tangentially from distal end of the stem (22), forming an elbow (28) thereat. The cantilever structure (20) may comprise of any one of L-shape or T-shape structure formed via MEMS processes, particularly surface micromachining (SMM) processes so that our proposed valve may be fabricated cost-effectively, robust and easily integrated into semiconductor devices.
摘要翻译：公开了由于施加的流体压力而由微型阀结构（20）的变形（例如弯曲和旋转）致动的被动微型阀。阀门结构（20）的变形将流体流引导到期望的通道并减少死体积的发生。我们的微型阀的基本实施例包括在以被动方式调节至少第一通道（12）和第二通道（14）之间的流体流动的半导体制造体（10）中，微型阀被制造为整体式悬臂结构（20）包括具有刚性地固定到基底（15）的基部（24）的杆（22）; 以及至少一个杠杆臂（26），其在所述杆（22）的远端的大致切线处延伸，在其上形成肘部（28）。悬臂结构（20）可以包括通过MEMS工艺，特别是表面微加工（SMM）工艺形成的L形或T形结构中的任何一个，使得我们提出的阀可以经济有效地，鲁棒地并且容易地集成到半导体中设备。

15. 发明申请

WO2009157754A3 ELECTROMAGNETIC INDUCED FIELD EFFECT TRANSISTOR (EMIFET) 审中-公开
标题翻译：电磁感应场效应晶体管（EMIFET）
公开(公告)号：WO2009157754A3
公开(公告)日：2010-04-22
申请号：PCT/MY2009000084
申请日：2009-06-26
申请人： MIMOS BERHAD , TAMSIR AGUS SANTOSO , ALIAS DZUZLINDAH MUHAMAD , SULAIMAN SURAYA , MANUT AZRIF , ZAKARIA AZLAN , SYONO MOHD ISMAHADI , RANI ROZINA ABDUL
发明人： TAMSIR AGUS SANTOSO , ALIAS DZUZLINDAH MUHAMAD , SULAIMAN SURAYA , MANUT AZRIF , ZAKARIA AZLAN , SYONO MOHD ISMAHADI , RANI ROZINA ABDUL
IPC分类号： H01L29/772
CPC分类号： G01N27/414
摘要： An improved field-effect transistor for measuring biochemic properties in aqueous form by detecting the dielectric of the objects.
摘要翻译：一种改进的场效应晶体管，用于通过检测物体的电介质来测量水性形式的生物化学性质。

16. 发明申请

WO2009157754A2 ELECTROMAGNETIC INDUCED FIELD EFFECT TRANSISTOR (EMIFET) 审中-公开
标题翻译：电磁感应场效应晶体管（EMIFET）
公开(公告)号：WO2009157754A2
公开(公告)日：2009-12-30
申请号：PCT/MY2009/000084
申请日：2009-06-26
申请人： MIMOS BERHAD , TAMSIR, Agus, Santoso , ALIAS, Dzuzlindah, Muhamad , SULAIMAN, Suraya , MANUT, Azrif , ZAKARIA, Azlan , SYONO, Mohd, Ismahadi , RANI, Rozina, Abdul
发明人： TAMSIR, Agus, Santoso , ALIAS, Dzuzlindah, Muhamad , SULAIMAN, Suraya , MANUT, Azrif , ZAKARIA, Azlan , SYONO, Mohd, Ismahadi , RANI, Rozina, Abdul
IPC分类号： H01L29/772
CPC分类号： G01N27/414
摘要： An improved field-effect transistor for measuring biochemic properties in aqueous form by detecting the dielectric of the objects.
摘要翻译：一种改进的场效应晶体管，用于通过检测物体的电介质来测量水性形式的生物化学性质。

17. 发明申请

WO2009066991A2 A NOVEL APPARATUS AND METHOD FOR MONITORING ENVIRONMENTAL PARAMETERS 审中-公开
标题翻译：用于监测环境参数的新颖设备和方法
公开(公告)号：WO2009066991A2
公开(公告)日：2009-05-28
申请号：PCT/MY2008/000157
申请日：2008-11-24
申请人： MIMOS BERHAD , ABDUL RANI, Rozina , LEE, Hing Wah , ABD.AZIZ, Aiman Sajidah , SYONO, Mohd Ismahadi , ABDULLAH, Ali Zaini , MAT HUSSIN, Mohd Rofei Bin
发明人： ABDUL RANI, Rozina , LEE, Hing Wah , ABD.AZIZ, Aiman Sajidah , SYONO, Mohd Ismahadi , ABDULLAH, Ali Zaini , MAT HUSSIN, Mohd Rofei Bin
IPC分类号： A01G31/02
CPC分类号： A01G7/00 , A01G31/00
摘要： The present invention relates to an apparatus and a method for controlling and monitoring nutrient solution to be supplied to a plant.
摘要翻译：本发明涉及一种用于控制和监测供应给植物的营养液的装置和方法。

18. 发明申请

WO2009045091A2 A VERTICAL THIN POLYSILICON SUBSTRATE ISFET 审中-公开
标题翻译：垂直薄多晶硅衬底ISFET
公开(公告)号：WO2009045091A2
公开(公告)日：2009-04-09
申请号：PCT/MY2008/000116
申请日：2008-09-29
申请人： MIMOS BERHAD , SYONO, Mohd, Ismahadi , ABDUL RANI, Rozina
发明人： SYONO, Mohd, Ismahadi , ABDUL RANI, Rozina
IPC分类号： G01N27/333 , G01N27/30
CPC分类号： G01N27/4148
摘要： The present invention generally relates to a vertical thin polysilicon substrate ISFET for the measurement of hydrogen ions (pH) and other ion activity in solution characterized in that wherein the present invention comprises of a method of making polysilicon vertical ISFET which is fully CMOS compatible and wherein the substrate is the polysilicon which is vertically sandwiched between a source and a drain and wherein a very high drive current is possible to achieve due to the thin polysilicon material and wherein the sandwiched structure is designed to ensure excellent noise isolation and wherein the gate lies on the same surface level as the drain and hence a very large area for better gate sensitivity is possible.
摘要翻译：本发明总体上涉及用于测量溶液中的氢离子（pH）和其它离子活性的垂直薄多晶硅基底ISFET，其特征在于，其中本发明包括制造多晶硅垂直 ISFET，其完全CMOS兼容，并且其中衬底是垂直夹在源极和漏极之间的多晶硅，并且其中由于薄多晶硅材料而可以实现非常高的驱动电流，并且其中夹层结构被设计为确保优异噪声隔离，并且其中栅极位于与漏极相同的表面水平上，因此为了更好的栅极灵敏度而可以有非常大的面积。

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