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11. 发明申请

WO2013019910A1 SELF-ALIGNED METAL OXIDE TFT WITH REDUCED NUMBER OF MASKS 审中-公开
标题翻译：自对准金属氧化物膜，具有减少数量的掩模
公开(公告)号：WO2013019910A1
公开(公告)日：2013-02-07
申请号：PCT/US2012/049238
申请日：2012-08-02
申请人： CBRITE INC. , SHIEH, Chan-Long , YU, Gang , FOONG, Fatt
发明人： SHIEH, Chan-Long , YU, Gang , FOONG, Fatt
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565
摘要： A method of fabricating MO TFTs on transparent substrates by positioning opaque gate metal on the front surface of the substrate defining a gate area, depositing gate dielectric material on the front surface of the substrate, overlying the gate metal and a surrounding area, and depositing metal oxide semiconductor material on the gate dielectric material. Depositing etch stop material on the semiconductor material. Positioning photoresist on the etch stop material, the etch stop material and the photoresist being selectively removable, and the photoresist defining an isolation area in the semiconductor material. Removing uncovered portions of the etch stop. Exposing the photoresist from the rear surface of the substrate using the gate metal as a mask and removing exposed portions so as to leave the etch stop material uncovered except for a portion overlying and aligned with the gate metal. Etching uncovered portions of the semiconductor material to isolate the TFT. Using the photoresist, selectively etching the etch stop layer to leave a portion overlying and aligned with the gate metal and defining a channel area in the semiconductor material. Depositing and patterning conductive material on the etch stop layer and on the semiconductor material to form source and drain areas on opposed sides of the channel area.
摘要翻译：一种在透明基板上制造MO TFT的方法，该方法是通过在形成栅极区域的衬底的前表面上定位不透明栅极金属，在衬底的前表面上沉积栅介电材料，覆盖栅极金属和周围区域，并沉积金属氧化物半导体材料。在半导体材料上沉积蚀刻停止材料。将光致抗蚀剂定位在蚀刻停止材料上，蚀刻停止材料和光致抗蚀剂可选择性地移除，并且光刻胶在半导体材料中限定隔离区域。去除蚀刻停止件的未覆盖部分。使用栅极金属作为掩模从基板的后表面露出光致抗蚀剂，并除去暴露部分，以使除蚀刻停止材料未被覆盖，除了覆盖并与栅极金属对准的部分之外。蚀刻半导体材料的未覆盖部分以隔离TFT。使用光致抗蚀剂，选择性地蚀刻蚀刻停止层以留下覆盖并与栅极金属对准的部分并限定半导体材料中的沟道区域。在蚀刻停止层和半导体材料上沉积和图案化导电材料以在沟道区域的相对侧上形成源极和漏极区域。

12. 发明申请

WO2012115745A1 DRIVING METHOD FOR IMPROVING STABILITY IN MOTFTS 审中-公开
标题翻译：用于改善电动机稳定性的驱动方法
公开(公告)号：WO2012115745A1
公开(公告)日：2012-08-30
申请号：PCT/US2012/022867
申请日：2012-01-27
申请人： CBRITE INC. , SHIEH, Chan-long , YU, Gang
发明人： SHIEH, Chan-long , YU, Gang
IPC分类号： H01L29/10
CPC分类号： G09G3/3225 , G09G2310/063 , G09G2320/0204
摘要： A method of driving a display device includes providing an array of pixels including rows and columns of pixels, each pixel including a switching/driving transistor circuit and at least one light emitting device. Each row of pixels has a scan line and each column of pixels has a data line. The method further includes defining a frame period during which each pixel in the array of pixels is addressed and dividing the frame period into a write subframe, a display subframe, and a rest subframe. A scan pulse is supplied to each scan line, a data signal to each data line and the light emitting devices are disabled during the write subframe. The light emitting devices are enabled during the display subframe and the switching/driving transistor circuits are disabled. A rest pulse is supplied to all scan lines and the light emitting devices are disabled during the rest subframe.
摘要翻译：一种驱动显示装置的方法包括提供包括行和列的像素的像素阵列，每个像素包括开关/驱动晶体管电路和至少一个发光器件。每行像素具有扫描线，并且每列像素具有数据线。该方法还包括定义帧期间，在该帧周期期间，像素阵列中的每个像素被寻址并且将帧周期划分为写子帧，显示子帧和剩余子帧。向每条扫描线提供扫描脉冲，在写入子帧期间，对每个数据线的数据信号和发光器件禁用。发光器件在显示子帧期间被使能，并且开关/驱动晶体管电路被禁止。向所有扫描线提供静止脉冲，并且在其余子帧期间禁用发光装置。

13. 发明申请

WO2010028269A3 STABLE AMORPHOUS METAL OXIDE SEMICONDUCTOR 审中-公开
标题翻译：稳定的非晶态金属氧化物半导体
公开(公告)号：WO2010028269A3
公开(公告)日：2010-04-29
申请号：PCT/US2009056079
申请日：2009-09-04
申请人： CBRITE INC , SHIEH CHAN-LONG , YU GANG
发明人： SHIEH CHAN-LONG , YU GANG
IPC分类号： H01L21/322 , H01L31/00
CPC分类号： H01L29/04 , H01L21/00 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/16 , H01L21/28556 , H01L27/1214 , H01L27/1225 , H01L29/24 , H01L29/7869 , H01L29/78693 , H01L51/5012
摘要： A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.
摘要翻译：薄膜半导体器件具有包含非晶半导体离子金属氧化物和非晶绝缘共价金属氧化物的混合物的半导体层。一对端子被定位成与半导体层连通并且限定导电沟道，并且栅极端子被定位成与导电沟道连通并且被进一步定位以控制沟道的导电。本发明进一步包括在沉积过程期间沉积混合物的方法，包括使用氮气以控制所得半导体层中的载流子浓度。

14. 发明申请

WO2010028269A2 STABLE AMORPHOUS METAL OXIDE SEMICONDUCTOR 审中-公开
标题翻译：稳定的非晶态金属氧化物半导体
公开(公告)号：WO2010028269A2
公开(公告)日：2010-03-11
申请号：PCT/US2009/056079
申请日：2009-09-04
申请人： CBRITE INC. , SHIEH, Chan-long , YU, Gang
发明人： SHIEH, Chan-long , YU, Gang
IPC分类号： H01L29/24 , H01L21/20
CPC分类号： H01L29/04 , H01L21/00 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/16 , H01L21/28556 , H01L27/1214 , H01L27/1225 , H01L29/24 , H01L29/7869 , H01L29/78693 , H01L51/5012
摘要： A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.
摘要翻译：薄膜半导体器件具有包括非晶半导体离子金属氧化物和非晶绝缘共价金属氧化物的混合物的半导体层。一对端子被定位成与半导体层连通并且限定导电通道，并且栅极端子被定位成与导电通道连通并进一步定位成控制通道的导通。本发明还包括在沉积过程中沉积包括使用氮气的混合物的方法，以控制所得半导体层中的载流子浓度。

15. 发明申请

WO2010011729A1 ACTIVE MATRIX ORGANIC LIGHT EMITTING DISPLAY 审中-公开
标题翻译：有源矩阵有机发光显示
公开(公告)号：WO2010011729A1
公开(公告)日：2010-01-28
申请号：PCT/US2009/051374
申请日：2009-07-22
申请人： CBRITE INC. , SHIEH, Chan-Long , YU, Gang
发明人： SHIEH, Chan-Long , YU, Gang
IPC分类号： G09G3/32
CPC分类号： H01L27/322 , H01L27/3244
摘要： A full-color active matrix organic light emitting display including a transparent substrate, a color filter positioned on an upper surface of the substrate, a spacer layer formed on the upper surface of the color filter, a metal oxide thin film transistor backpanel formed on the spacer layer and defining an array of pixels, and an array of single color, organic light emitting devices formed on the backpanel and positioned to emit light downwardly through the backpanel, the spacer layer, the color filter, and the substrate in a full-color display.
摘要翻译：一种全色有源矩阵有机发光显示器，包括透明基板，位于基板上表面的滤色器，形成在滤色器上表面上的间隔层，金属氧化物薄膜晶体管背板间隔层和限定像素阵列，以及形成在背板上的单色有机发光器件的阵列，并被定位成以全色的方式通过背板，间隔层，滤色器和衬底向下发光。显示。

16. 发明申请

WO2008057553A3 TWO-TERMINAL SWITCHING DEVICES AND THEIR METHODS OF FABRICATION 审中-公开
标题翻译：两端开关器件及其制造方法
公开(公告)号：WO2008057553A3
公开(公告)日：2008-07-10
申请号：PCT/US2007023427
申请日：2007-11-06
申请人： CBRITE INC , YU GANG , SHIEH CHAN-LONG , LEE HSING-CHUNG
发明人： YU GANG , SHIEH CHAN-LONG , LEE HSING-CHUNG
IPC分类号： H01L29/22 , G02F1/1365 , H01L29/417 , H01L29/786 , H01L29/861 , H01L51/05 , H01L51/10
CPC分类号： H01L29/861 , G02F1/1365 , G02F1/167 , H01L29/22 , H01L29/417 , H01L29/786 , H01L45/00 , H01L51/0035 , H01L51/0579 , H01L51/0587
摘要： Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotataing element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.
摘要翻译：提供了具有高导通/截止电流比和高击穿电压特性的两端开关器件。这些装置可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。开关器件包括两个电极和位于电极之间的宽带半导体材料层。根据一个示例，阴极包括具有低功函数的金属，阳极包括具有p +或p ++类型的导电性的有机材料，并且宽带半导体包括金属氧化物。阴极和阳极材料之间的功函数差异优选为至少约0.6eV。可以实现在约15V的电压范围内的至少10,000的开/关电流比。如果需要，可以在具有低熔点的柔性聚合物基材上形成装置。

17. 发明申请

WO2008045891A3 ELECTRO-OPTIC DISPLAY 审中-公开
公开(公告)号：WO2008045891A3
公开(公告)日：2008-04-17
申请号：PCT/US2007/080842
申请日：2007-10-09
申请人： CBRITE INC. , LIPOVETSKAYA, Yelena , GOBROGGE, Brian
发明人： LIPOVETSKAYA, Yelena , GOBROGGE, Brian
IPC分类号： G02B26/02
摘要： An electro-optic display includes a "matrix" (107., Ill) for confining moving elements of the display (e.g., rotating or twisting elements (103)). The matrix (or at least the viewable portions thereof) may have a high reflectivity, comparable to that of white paper. This results in an overall "whiter" or brighter display. The matrix may include channels to facilitate inter-cell fluid transport and high-density element packing. In some cases, the matrix elements provide a hexagonal arrangement of cells (105) for holding the rotating elements (103). The rotating elements of the display may be electrically and optically anisotropic hemispherically coated spheres. The hemispherical coating typically provides the necessary charge to create electrical anisotropy.

18. 发明申请

WO2018075404A1 METHOD OF RECOVERY OF MOTFT BACKPLANE AFTER A-SI PHOTODIODE FABRICATION 审中-公开
标题翻译：在A-Si光电二极管制造之后恢复MOTFT背板的方法
公开(公告)号：WO2018075404A1
公开(公告)日：2018-04-26
申请号：PCT/US2017/056792
申请日：2017-10-16
申请人： CBRITE INC.
发明人： SHIEH, Chan-Long , YU, Gang , WANG, Guangming
IPC分类号： H01L27/146
CPC分类号： H01L27/14616 , H01L27/1463 , H01L27/14643 , H01L27/14658 , H01L27/14689 , H01L27/1469 , H01L27/14692
摘要： A method of fabricating a structure including a high mobility backplane and a-Si photodiode imager includes forming a matrix of metal oxide thin film transistors on the surface of a rigid support member, depositing a planarizing layer on the matrix of transistors that is either porous or permissive/diffusive to oxygen at temperatures below approximately 200°C, and fabricating a matrix of passivated a-Si photodiodes over the matrix of transistors and electrically connected one each photodiode to each of the transistors. A continuous path is provided through the planarizing layer from the exterior of the structure to each of the transistors and the structure is annealed at a temperature below 200°C in an oxygen ambient to move oxygen from the oxygen ambient to an active layer of each of the transistors and repair loss of oxygen damage to the transistors caused by the fabrication of the passivated a-Si photodiodes.
摘要翻译：一种制造包括高迁移率背板和a-Si光电二极管成像器的结构的方法包括：在刚性支撑构件的表面上形成金属氧化物薄膜晶体管的矩阵;在所述刚性支撑构件的表面上沉积平坦化层在低于大约200℃的温度下多孔或者允许/扩散到氧的晶体管矩阵，以及在晶体管矩阵上制造钝化a-Si光电二极管矩阵并且将每个光电二极管与每个晶体管电连接。提供穿过平面化层从结构外部到每个晶体管的连续路径，并且结构在低于200℃的温度下在氧气环境中退火，以将氧气从氧气环境移动到每个晶体管的活性层晶体管和修复由于钝化a-Si光电二极管的制造而导致的晶体管的氧损伤的损失。

19. 发明申请

WO2016176216A1 MOTFT AND ARRAY CIRCUIT FOR CHEMICAL/BIOCHEMICAL APPLICATIONS 审中-公开
标题翻译：化学/生物化学应用的MOTFT和阵列电路
公开(公告)号：WO2016176216A1
公开(公告)日：2016-11-03
申请号：PCT/US2016/029384
申请日：2016-04-26
申请人： CBRITE INC.
发明人： SHIEH, Chan-Long , YU, Gang , ACKLEY, Donlad
IPC分类号： G01N33/487 , G01N27/327
CPC分类号： H01L29/7869 , G01N27/4148 , H01L27/1225 , H01L29/43
摘要： Electro-chemical manipulation and charge sensing apparatus includes a chemical/biochemical testing pad positioned on a dielectric substrate, a sensing circuit coupled to the testing pad, the sensing circuit including at least one MOTFT device, and a manipulation and control circuit coupled to the testing pad, the manipulation and control circuit including at least one MOTFT device. The electro-chemical manipulation and charge sensing apparatus can include a plurality of chemical/biochemical testing pads distributed in a matrix formation of rows and columns and positioned on a dielectric substrate.
摘要翻译：电化学操作和电荷感测装置包括位于电介质基底上的化学/生化测试垫，耦合到测试垫的感测电路，感测电路包括至少一个MOTFT装置，以及耦合到测试的操纵和控制电路所述操纵和控制电路包括至少一个MOTFT装置。电化学操作和电荷感测装置可以包括分布在行和列的矩阵形式中并定位在电介质基底上的多个化学/生化测试垫。

20. 发明申请

WO2016014345A3 TWO-TERMINAL ELECTRONIC DEVICES AND THEIR METHODS OF FABRICATION 审中-公开
标题翻译：双端子电子器件及其制造方法
公开(公告)号：WO2016014345A3
公开(公告)日：2016-03-17
申请号：PCT/US2015040815
申请日：2015-07-16
申请人： CBRITE INC
发明人： YU GANG , SHIEH CHAN-TONG , CHEN ZHAO
IPC分类号： H01L29/861 , G02F1/1365 , H01G11/48 , H01L51/05 , H01L51/42 , H01L51/50
CPC分类号： H01L51/4273 , G02F1/1365 , H01L27/308 , H01L51/0081 , H01L51/0085 , H01L51/0587 , H01L2251/308 , Y02E10/549
摘要： Two-terminal electronic devices, such as photodetectors, photovoltaic devices and electroluminescent devices, are provided. The devices include a first electrode residing on a substrate, wherein the first electrode comprises a layer of metal; an I-layer comprising an inorganic insulating or broad band semiconducting material residing on top of the first electrode, and aligned with the first electrode, wherein the inorganic insulating or broad band semiconducting material is a compound of the metal of the first electrode; a semiconductor layer, preferably comprising a p-type semiconductor, residing over the I-layer; and a second electrode residing over the semiconductor layer, the electrode comprising a layer of a conductive material. The band gap of the material of the semiconductor layer, is preferably smaller than the band gap of the I-layer material. The band gap of the material of the I-layer is preferably greater than 2.5 eV.
摘要翻译：提供诸如光电探测器，光伏器件和电致发光器件的双端子电子器件。该器件包括位于衬底上的第一电极，其中第一电极包括金属层; 包括位于所述第一电极顶部并与所述第一电极对齐的无机绝缘或宽带半导体材料的I层，其中所述无机绝缘或宽带半导体材料是所述第一电极的金属化合物; 位于I层之上的半导体层，优选地包括p型半导体; 以及位于半导体层上的第二电极，该电极包括一层导电材料。半导体层的材料的带隙优选小于I层材料的带隙。 I层材料的带隙优选大于2.5eV。

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