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    • 123. 发明申请
    • A METHOD AND APPARATUS FOR SECURITY-RISK BASED ADMISSION CONTROL
    • 一种基于安全风险的入侵控制的方法和装置
    • WO2010036612A1
    • 2010-04-01
    • PCT/US2009/057685
    • 2009-09-21
    • NTT DOCOMO, INC.KOZAT, Ulas, C.RADOSAVAC, SvetlanaKEMPF, James
    • KOZAT, Ulas, C.RADOSAVAC, SvetlanaKEMPF, James
    • H04L29/06H04L29/08
    • H04L63/14H04L63/102H04L67/303H04L67/34H04L2463/144
    • A method and apparatus is disclosed herein for security risk-based admission control. In one embodiment, the method comprises: receiving a request from the user device to access the network; determining whether to admit the user device based on a security-based admission control policy that admits user devices based on a constraint optimization that attempts to maximize the sum utility of the currently admitted user devices in view of a security assessment of the user device and security risk imposed on the network and already admitted user devices if the user device is admitted to the network, wherein the constraint optimization is based on a utility associated with admitting the user device to the network, a reputation value associated with the user device, and a botnet damage estimation on the network associated with the user device; and admitting the user device to the network based on results of determining whether to admit the user device.
    • 本文公开了一种用于基于安全风险的准入控制的方法和装置。 在一个实施例中,该方法包括:从用户设备接收访问网络的请求; 基于基于用户设备的安全性评估,基于基于安全的接纳控制策略来接纳用户设备,该策略基于尝试最大化当前接纳的用户设备的和效用的约束优化 如果用户设备被允许进入网络,施加在网络上的已经被接纳的用户设备的风险,其中约束优化基于与将用户设备接纳到网络相关联的实用程序,与用户设备相关联的信誉值,以及 与用户设备相关联的网络上的僵尸网络损坏估计; 并且基于确定是否允许用户设备的结果将用户设备接纳到网络。
    • 125. 发明申请
    • SONOS ONO STACK SCALING
    • WO2008147386A1
    • 2008-12-04
    • PCT/US2007/020966
    • 2007-09-28
    • CYPRESS SEMICONDUCTOR CORPORATIONJENNE, Fredrick, B.LEVY, Sagy
    • JENNE, Fredrick, B.LEVY, Sagy
    • H01L21/31
    • H01L29/792H01L21/28282H01L21/3143H01L29/4234H01L29/4916H01L29/512H01L29/513H01L29/518
    • Scaling a nonvolatile trapped-charge memory device and the article made thereby. In an embodiment, scaling includes multiple oxidation and nitridation operations to provide a tunneling layer with a dielectric constant higher than that of a pure silicon dioxide tunneling layer but with a fewer hydrogen and nitrogen traps than a tunneling layer having nitrogen at the substrate interface. In an embodiment, scaling includes forming a charge trapping layer with a non-homogenous oxynitride stoichiometry. In one embodiment the charge trapping layer includes a silicon-rich, oxygen-rich layer and a silicon-rich, oxygen-lean oxynitride layer on the silicon-rich, oxygen-rich layer. In an embodiment, the method for scaling includes a dilute wet oxidation to densify a deposited blocking oxide and to oxidize a portion of the silicon- rich, oxygen-lean oxynitride layer.
    • 缩放非易失性捕获电荷存储器件及其制成的制品。 在一个实施例中,缩放包括多次氧化和氮化操作,以提供具有高于纯二氧化硅隧道层的介电常数的隧道层,但是具有比在衬底界面处具有氮的隧穿层更少的氢和氮阱。 在一个实施例中,缩放包括形成具有非均匀氧氮化物化学计量的电荷俘获层。 在一个实施方案中,电荷俘获层包含富含硅的富氧层和在富硅的富氧层上的富含氧的贫氧氧氮化物层。 在一个实施方案中,缩放方法包括稀释湿氧化以致密集沉积的阻塞氧化物并氧化一部分富含富含氧的氧氮化物层。
    • 130. 发明申请
    • A SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS AND METHOD THEREOF
    • 半导体基板处理装置及其方法
    • WO2006020333A1
    • 2006-02-23
    • PCT/US2005/025823
    • 2005-07-22
    • APPLIED MATERIALS, INC.VERHAVERBEKE, StevenBROWN, Brian, J.
    • VERHAVERBEKE, StevenBROWN, Brian, J.
    • H01L21/00
    • H01L21/67155B08B3/12B08B7/04H01L21/67017H01L21/67051H01L21/67057
    • According to one aspect of the invention, a semiconductor substrate processing apparatus and a method for processing semiconductor substrates are provided. The semiconductor substrate processing apparatus may include a semiconductor substrate support, a dispense head positioned over the semiconductor substrate support, a liquid container, and a transport subsystem. A semiconductor substrate may be placed on the semiconductor substrate support while a first semiconductor processing liquid is dispensed thereon. The wafer may also be spun by the semiconductor substrate support to remove the first semiconductor processing liquid. The transport subsystem may transport the semiconductor substrate to the liquid container where the semiconductor substrate may be immersed in a second semiconductor processing liquid. The semiconductor substrate may then be removed from the second semiconductor processing liquid while vapor is directed at a surface of the semiconductor substrate where the semiconductor substrate contacts a surface of the second semiconductor processing liquid.
    • 根据本发明的一个方面,提供半导体衬底处理装置和半导体衬底的处理方法。 半导体衬底处理设备可以包括半导体衬底支撑件,位于半导体衬底支架上的分配头,液体容器和运输子系统。 半导体衬底可以放置在半导体衬底支撑件上,同时分配第一半导体处理液体。 也可以通过半导体衬底支撑来旋转晶片以移除第一半导体处理液体。 输送子系统可以将半导体衬底输送到半导体衬底浸入第二半导体处理液中的液体容器。 然后可以从第二半导体处理液体中去除半导体衬底,同时蒸汽指向半导体衬底的表面,其中半导体衬底与第二半导体处理液体的表面接触。