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91. 发明申请

WO2007081492A3 HIGH GROWTH RATE METHODS OF PRODUCING HIGH-QUALITY DIAMONDS 审中-公开
标题翻译：生长高品质钻石的高生长速率方法
公开(公告)号：WO2007081492A3
公开(公告)日：2008-02-14
申请号：PCT/US2006047990
申请日：2006-12-15
申请人： UAB RESEARCH FOUNDATION , VOHRA YOGESH K , BAKER PAUL A
发明人： VOHRA YOGESH K , BAKER PAUL A
IPC分类号： C30B29/04 , C30B23/00
CPC分类号： C30B29/04 , C01B32/25 , C30B25/105
摘要： In one aspect, the invention relates to a method of producing high-quality diamond comprising the steps of providing a mixture comprising hydrogen, a carbon precursor, and oxygen; exposing the mixture to energy at a power sufficient to establish a plasma from the mixture; containing the plasma at a pressure sufficient to maintain the plasma; and depositing carbon-containing species from the plasma to produce diamond at a growth rate of at least about 10 µm/hr; wherein the diamond comprises less than about 10 ppm nitrogen. The invention also relates to the apparatus, gas compositions, and plasma compositions used in connection with the methods of the invention as well as the products produced by the methods of the invention. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
摘要翻译：一方面，本发明涉及生产高质量金刚石的方法，包括以下步骤：提供包含氢气，碳前体和氧气的混合物; 以足以从混合物建立等离子体的功率将混合物暴露于能量; 在足以维持等离子体的压力下容纳等离子体; 以及从等离子体沉积含碳物质以至少约10μm/ hr的生长速率生产金刚石; 其中所述金刚石包含小于约10ppm的氮。本发明还涉及用于本发明方法的设备，气体组合物和等离子体组合物以及由本发明方法生产的产品。该摘要旨在作为用于在特定领域中进行搜索的目的的扫描工具，并且不旨在限制本发明。

92. 发明申请

WO2007111967A2 CHEMICALLY ATTACHED DIAMONDOIDS FOR CVD DIAMOND FILM NUCLEATION 审中-公开
标题翻译：化学连接的金刚石膜用于CVD金刚石膜核
公开(公告)号：WO2007111967A2
公开(公告)日：2007-10-04
申请号：PCT/US2007007184
申请日：2007-03-23
申请人： CHEVRON USA INC , DAHL JEREMY E , CARLSON ROBERT M , BOKHARI WASIQ , LIU SHENGGAO
发明人： DAHL JEREMY E , CARLSON ROBERT M , BOKHARI WASIQ , LIU SHENGGAO
IPC分类号： C30B23/00
CPC分类号： C30B29/04 , C23C16/02 , C23C16/272 , C30B25/105 , C30B25/18
摘要： Provided is a novel method for nucleating the growth of a diamond film. The method comprises providing a substrate having a diamondoid chemically attached to it, which serves as a superior nucleation site, and then facilitating the growth of the diamond film.
摘要翻译：提供了一种用于使金刚石膜的生长成核的新颖方法。该方法包括提供具有化学连接到其上的金刚石的基材，其用作优异的成核位点，然后促进金刚石膜的生长。

93. 发明申请

WO2006041660A8 100 MM SILICON CARBIDE WAFER WITH LOW MICROPIPE DENSITY 审中-公开
标题翻译： 100微米碳化硅薄膜，具有低微孔密度
公开(公告)号：WO2006041660A8
公开(公告)日：2007-09-07
申请号：PCT/US2005034352
申请日：2005-09-27
申请人： CREE INC , POWELL ADRIAN , BRADY MARK , LEONARD ROBERT TYLER
发明人： POWELL ADRIAN , BRADY MARK , LEONARD ROBERT TYLER
IPC分类号： C30B29/36 , C30B23/00 , C30B33/10
CPC分类号： H01L29/1608 , C30B23/00 , C30B29/36 , H01L29/04
摘要： A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100mm and a micropipe density of less than about 25 cm -2 .
摘要翻译：公开了具有至少约100mm的直径和小于约25cm -2的微管密度的高质量的SiC单晶晶片。

94. 发明申请

WO2007037906A2 METHODS FOR SYNTHESIS OF METAL NANOWIRES 审中-公开
标题翻译：金属纳米粒子的合成方法
公开(公告)号：WO2007037906A2
公开(公告)日：2007-04-05
申请号：PCT/US2006/034002
申请日：2006-08-31
申请人： HONDA MOTOR CO., LTD. , HARUTYUNYAN, Avetik
发明人： HARUTYUNYAN, Avetik
IPC分类号： C30B23/00 , B05D7/00 , C23C16/00 , H01L21/44
CPC分类号： C23C18/1216 , C23C18/06 , C23C18/08
摘要： Methods for synthesizing metal nanowires are provided. A metalorganic layer is deposited on a substrate as a thin film. The thermal decomposition of the metalorganic thin film in the presence of air synthesizes metal nanowires. The metal can be varied to produce nanowires with different properties.
摘要翻译：提供合成金属纳米线的方法。金属有机层作为薄膜沉积在基板上。在空气存在下金属有机薄膜的热分解合成金属纳米线。金属可以变化以产生具有不同性质的纳米线。

95. 发明申请

WO2007033312A2 PROCESS FOR MANUFACTURE OF SUPER LATTICE USING ALTERNATING HIGH AND LOW TEMPERATURE LAYERS TO BLOCK PARASITIC CURRENT PATH 审中-公开
标题翻译：使用替代高温和低温层来制造超临界流程以阻挡PARASITIC电流路径的过程
公开(公告)号：WO2007033312A2
公开(公告)日：2007-03-22
申请号：PCT/US2006035800
申请日：2006-09-14
申请人： INT RECTIFIER CORP , BRIDGER PAUL , BEACH ROBERT
发明人： BRIDGER PAUL , BEACH ROBERT
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02507 , C30B23/002 , C30B23/063 , C30B25/02 , C30B25/10 , C30B25/16 , C30B29/403 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/04
摘要： A method for fabricating a III-nitride semiconductor body that include high temperature and low temperature growth steps.
摘要翻译：一种用于制造包括高温和低温生长步骤的III族氮化物半导体体的方法。

96. 发明申请

WO2007018555A2 ULTRATOUCH CVD SINGLE CRYSTAL DIAMOND AND THREE DIMENSIONAL GROWTH THEREOF 审中-公开
标题翻译： ULTRATOUCH CVD单晶金刚石及其三维生长
公开(公告)号：WO2007018555A2
公开(公告)日：2007-02-15
申请号：PCT/US2005032199
申请日：2005-09-09
申请人： CARNEGIE INST OF WASHINGTON , HEMLEY RUSSELL J , MAO HO-KWANG , YAN CHIH-SHIUE
发明人： HEMLEY RUSSELL J , MAO HO-KWANG , YAN CHIH-SHIUE
IPC分类号： C30B25/00 , C30B23/00 , C30B28/12 , C30B28/14
CPC分类号： C30B25/105 , C23C16/274 , C23C16/277 , C23C16/279 , C30B29/04
摘要： The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m 1/2 . The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m 1/2 . The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.
摘要翻译：本发明涉及通过微波等离子体化学气相沉积生长的具有至少约30MPa m 1/2的韧性的单晶金刚石。本发明还涉及一种方法，生产具有至少约30MPa m 1/2的韧性的单晶金刚石。本发明还涉及在三维上制备单晶CVD金刚石的方法单晶金刚石基材。

97. 发明申请

WO2007001343A2 NANOSTRUCTURED FUEL CELL ELECTRODE 审中-公开
标题翻译：纳米结构燃料电池电极
公开(公告)号：WO2007001343A2
公开(公告)日：2007-01-04
申请号：PCT/US2005/029747
申请日：2005-08-19
申请人： ION AMERICA CORPORATION , SRIDHAR, K. R.
发明人： SRIDHAR, K. R.
IPC分类号： H01M4/86 , H01M8/12 , C01B13/14 , C30B23/00 , C23C16/00
CPC分类号： H01M4/8626 , B82Y30/00 , C01B13/20 , C01G1/02 , C01G25/02 , C01G53/04 , C01P2004/13 , C01P2004/16 , C01P2004/17 , C01P2006/40 , C30B23/007 , C30B25/005 , C30B29/62 , H01M4/881 , H01M4/8867 , H01M4/8882 , H01M4/9025 , H01M4/9041 , H01M4/905 , H01M8/1213 , H01M8/124 , H01M2008/1293 , Y02P70/56
摘要： A fuel cell includes an electrolyte, a first electrode, and a second electrode. At least the first electrode comprises a nanostructured material.
摘要翻译：燃料电池包括电解质，第一电极和第二电极。至少第一电极包括纳米结构材料。

98. 发明申请

WO2005007936A3 ULTRAHARD DIAMONDS AND METHOD OF MAKING THEREOF 审中-公开
标题翻译：超声波DIAMONDS及其制作方法
公开(公告)号：WO2005007936A3
公开(公告)日：2006-07-20
申请号：PCT/US2004022611
申请日：2004-07-14
申请人： CARNEGIE INST OF WASHINGTON , HEMLEY RUSSELL J , MAO HO-KWANG , YAN CHIH-SHIUE
发明人： HEMLEY RUSSELL J , MAO HO-KWANG , YAN CHIH-SHIUE
IPC分类号： C30B1/12 , C23C16/26 , C30B1/02 , C30B7/00 , C30B21/02 , C30B23/00 , C30B23/08 , C30B25/00 , C30B25/02 , C30B25/10 , C30B28/06 , C30B28/12 , C30B28/14 , C30B29/04 , C30B33/00 , C30B33/02 , G11B27/034 , G11B27/036 , G11B27/10 , G11B27/11 , G11B27/34 , H04N5/76 , H04N5/765 , H04N5/775 , H04N5/781 , H04N9/804 , H04N9/82
CPC分类号： C30B33/02 , C01B32/25 , C23C16/274 , C23C16/277 , C23C16/279 , C30B25/105 , C30B29/04 , C30B33/00 , G11B2220/20 , G11B2220/65 , H04N5/76 , H04N5/765 , H04N5/775 , H04N5/781 , H04N9/8042 , H04N9/8205
摘要： A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C to have a hardness in excess of 120 GPa.
摘要翻译：通过微波等离子体化学气相沉积生长的单晶金刚石在超过4.0GPa的压力下退火并加热至超过1500℃的温度，其硬度大于120GPa。制造硬质单晶金刚石的方法包括生长单晶金刚石并在超过4.0GPa的压力和超过1500℃的温度下退火单晶金刚石以具有超过120GPa的硬度。

99. 发明申请

WO2006062955A1 PROCESS FOR PRODUCING HIGH QUALITY LARGE SIZE SILICON CARBIDE CRYSTALS 审中-公开
标题翻译：生产高品质大尺寸碳化硅晶体的工艺
公开(公告)号：WO2006062955A1
公开(公告)日：2006-06-15
申请号：PCT/US2005/044081
申请日：2005-12-07
申请人： CREE, INC. , POWELL, Adrian , TSEVTKOV, Valeri, F. , BRADY, Mark , LEONARD, Robert, T.
发明人： POWELL, Adrian , TSEVTKOV, Valeri, F. , BRADY, Mark , LEONARD, Robert, T.
IPC分类号： C30B29/36 , C30B23/00
CPC分类号： C30B29/36 , C30B23/00
摘要： The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises reducing the number of macrosteps in a growing crystal by incorporating a high concentration of nitrogen atoms in the initial one (1) millimeter of crystal growth.
摘要翻译：本发明是在种子升华系统中生产高质量的碳化硅单晶的方法的改进。在第一实施例中，改进包括通过在最初的一（1）毫米晶体生长中引入高浓度的氮原子来减少生长晶体中的宏步数。

100. 发明申请

WO2006041659A3 LOW 1C SCREW DISLOCATION DENSITY 3 INCH SILICON CARBIDE WAFER 审中-公开
标题翻译：低1C螺丝偏心密度3英寸碳化硅波片
公开(公告)号：WO2006041659A3
公开(公告)日：2006-06-08
申请号：PCT/US2005034351
申请日：2005-09-27
申请人： CREE INC , POWELL ADRIAN , BRADY MARK , MUELLER STEPHAN G , TSVETKOV VALERI F , LEONARD ROBERT TYLER
发明人： POWELL ADRIAN , BRADY MARK , MUELLER STEPHAN G , TSVETKOV VALERI F , LEONARD ROBERT TYLER
IPC分类号： C30B23/00
CPC分类号： C30B23/00 , C30B29/36 , Y10T428/21
摘要： A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm -2 .
摘要翻译：公开了具有至少约3英寸的直径和小于约2000cm -2的1c螺旋位错密度的高质量的SiC单晶晶片。

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