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1. 发明申请

WO1987006385A1 METHOD FOR MAKING A SMOOTH SURFACE ON A SUBSTRATE 审中-公开
标题翻译：在基板上制作平滑表面的方法
公开(公告)号：WO1987006385A1
公开(公告)日：1987-10-22
申请号：PCT/CH1987000044
申请日：1987-04-21
申请人： BATTELLE MEMORIAL INSTITUTE , ZEGA, Bogdan , BELLMANN, Günter , NGUYEN, Van, Tao
发明人： BATTELLE MEMORIAL INSTITUTE
IPC分类号： G11B05/64
CPC分类号： G11B5/7315 , B05D1/42 , B05D3/067 , B05D5/061 , H01F10/26
摘要： In order to make a smooth surface by deposition of a thin layer of which the rugosity is one order of magnitude at least lower than that of the substrate, there is used a photopolymerizable varnish capable of wetting evenly the substrate and of which the free surface is either moulded and polymerized by electromagnetic radiation through the transparent wall of the mould whose surface has the desired rugosity, or is formed outside a mould by means of the centrifugal force or by lamellar flow particularly, and polymerized by an electromagnetic or corpuscular radiation such as a beam of electrons.

2. 发明申请

WO1997022967A1 CERAMIC WAFERS AND THIN FILM MAGNETIC HEADS 审中-公开
标题翻译：陶瓷和薄膜磁头
公开(公告)号：WO1997022967A1
公开(公告)日：1997-06-26
申请号：PCT/US1996016940
申请日：1996-10-23
申请人： MINNESOTA MINING AND MANUFACTURING COMPANY
发明人： MINNESOTA MINING AND MANUFACTURING COMPANY , CHIU, Raymond, C. , SMITH, Robert, G. , WEAVER, Billy, L.
IPC分类号： G11B05/60
CPC分类号： C04B41/009 , C04B35/117 , C04B41/5059 , C04B41/87 , C04B2111/00844 , G11B5/31 , H01F10/26 , Y10T428/24355 , Y10T428/24975 , Y10T428/263 , Y10T428/265 , C04B41/4531 , C04B35/10 , C04B35/48
摘要： A composite ceramic wafer including a beta silicon carbide layer. The composite ceramic wafer is useful for making thin film magnetic heads.
摘要翻译：包括β碳化硅层的复合陶瓷晶片。复合陶瓷晶片可用于制造薄膜磁头。

3. 发明申请

WO2016158923A1 磁気抵抗効果素子审中-公开
标题翻译：磁感应效应元件
公开(公告)号：WO2016158923A1
公开(公告)日：2016-10-06
申请号：PCT/JP2016/060056
申请日：2016-03-29
申请人： TDK株式会社
发明人：佐々木　智生
IPC分类号： H01L43/10 , G01R33/09 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/26 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： H01L43/08 , G01R33/09 , G01R33/098 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/26 , H01F10/32 , H01F10/324 , H01L27/105 , H01L29/82 , H01L43/10
摘要：　この磁気抵抗効果素子では、第一の強磁性金属層と、第二の強磁性金属層と、前記第一及び第二の強磁性金属層に挟持されたトンネルバリア層と、を有し、前記第一及び第二の強磁性金属層に挟持されたトンネルバリア層と、を有し、前記トンネルバリア層は、ＡＢ２Ｏｘ（０＜ｘ≦４）という組成式で表され、陽イオンの配列が不規則化したスピネル構造であり、前記トンネルバリア層は、前記第一の強磁性金属層と前記第二の強磁性金属層の両方と格子整合している格子整合部と、前記第一の強磁性金属層と前記第二の強磁性金属層の少なくとも一方と格子整合していない格子不整合部と、を有し、Ａサイトは複数の非磁性元素の二価の陽イオンであり、Ｂサイトはアルミニウムイオンであり、前記組成式において二価の陽イオンの元素数がアルミニウムイオンの元素数の半分未満である。
摘要翻译：该磁阻效应元件具有第一强磁性金属层，第二铁磁金属层和夹在第一和第二铁磁性金属层之间的隧道势垒层，其中：隧道势垒层具有由组成式AB2Ox（0）表示的尖晶石结构

4. 发明申请

WO2014157526A1 磁性シート、それを用いた電子機器、および、磁性シートの製造方法审中-公开
标题翻译：磁性片，使用其的电子器件和制造磁性片的方法
公开(公告)号：WO2014157526A1
公开(公告)日：2014-10-02
申请号：PCT/JP2014/058879
申请日：2014-03-27
申请人：日立金属株式会社
发明人：渡辺　光弘 , 三木　裕彦 , 中村　真貴
IPC分类号： H01F1/16 , G01C17/38 , H01F1/00 , H05K9/00
CPC分类号： H01F10/26 , G01C17/28 , H01F1/14775 , H01F1/16 , H01F10/14 , H01F10/142 , H01F27/365
摘要：　樹脂フィルム上に粘着層を介してＦｅ基金属磁性材料からなる薄板状磁性体を保持した磁性シートであって、前記薄板状磁性体の単層の厚みが１５μｍ～３５μｍであり、前記薄板状磁性体は、周波数５００ｋＨｚでの交流比透磁率μｒが２２０以上７７０以下である磁性シート。
摘要翻译：一种磁性片，其中包含铁基金属磁性材料的薄片形磁性体通过树脂膜保持在其间的压敏粘合剂层。薄片状磁性体本身的厚度在15〜35μm之间，薄片状磁体的频率为500kHz时的交流相对磁导率（μr）为220〜770（含）。

5. 发明申请

WO2005064783A2 FULLY INTEGRATED TUNEABLE SPIN TORQUE DEVICE FOR GENERATING AN OSCILLATING SIGNAL AND METHOD FOR TUNING SUCH APPARATUS 审中-公开
标题翻译：用于产生振荡信号的可调旋转扭矩装置和调谐方法
公开(公告)号：WO2005064783A2
公开(公告)日：2005-07-14
申请号：PCT/EP2004/014816
申请日：2004-12-24
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW , EYCKMANS, Wouter , LAGAE, Liesbet
发明人： EYCKMANS, Wouter , LAGAE, Liesbet
IPC分类号： H03B9/14
CPC分类号： G01R33/02 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/193 , H01F10/26 , H01F10/3213 , H01F10/3254 , H01F10/3268 , H01L43/08 , H03B15/006 , H03H2/001 , H03H9/02574 , H03H9/02645 , H03H9/02976 , H03H9/135 , H03H9/6486 , H03K19/19
摘要： The present invention is related to a a device and corresponding methods for generating an oscillating signal. The device comprises a means for providing a current of spin polarised charge carriers, a magnetic, e.g. ferromagnetic, excitable layer adapted for receiving the generated current of spin polarised charge carriers thus generating an oscillating signal with a frequency v osc and an integrated means for interacting with said magnetic, e.g. ferromagnetic, excitable layer such that a selection of said oscillation frequency is achieved. No external field needs to be applied to select or tune the frequency. Different types of integrated means can be used, such as e.g. means inducing mechanical stress in the magnetic, e.g. ferromagnetic, excitable layer, means inducing exchange bias interactions and means inducing magnetostatic interactions.
摘要翻译：本发明涉及一种用于产生振荡信号的装置和相应的方法。该装置包括用于提供自旋极化电荷载流子的电流的装置，例如磁性的。铁磁性可激发层，适于接收所产生的自旋极化电荷载流子的电流，从而产生具有频率vosc的振荡信号，以及用于与所述磁性相互作用的集成装置。铁磁性，可激发层，从而实现所述振荡频率的选择。不需要外部场来选择或调整频率。可以使用不同类型的集成装置，例如，意味着在磁性中诱导机械应力，例如，铁磁性，可激发层，意味着诱导交换偏压相互作用和诱导静磁相互作用的手段。

6. 发明申请

WO2005064590A1 METHOD FOR ULTRA-FAST CONTROLLING OF A MAGNETIC CELL AND RELATED DEVICES 审中-公开
标题翻译：用于超快速控制磁性细胞的方法及相关装置
公开(公告)号：WO2005064590A1
公开(公告)日：2005-07-14
申请号：PCT/EP2004/014815
申请日：2004-12-24
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW , EYCKMANS, Wouter , LAGAE, Liesbet
发明人： EYCKMANS, Wouter , LAGAE, Liesbet
IPC分类号： G10K11/36
CPC分类号： G01R33/02 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/193 , H01F10/26 , H01F10/3213 , H01F10/3254 , H01F10/3268 , H01L43/08 , H03B15/006 , H03H2/001 , H03H9/02574 , H03H9/02645 , H03H9/02976 , H03H9/135 , H03H9/6486 , H03K19/19
摘要： The present invention relates to a device and corresponding method for ultrafast controlling of the magnetization of a magnetic element. A device (100) includes a surface acoustic wave generating means (102), a transport layer (104), which is typically functionally and partially structurally comprised in said SAW generating means (102), and at least one ferromagnetic element (106). A surface acoustic wave is generated and propagates in a transport layer (104) which typically consists of a piezo-electric material. Thus, strain is induced in the transport layer (104) and in the ferromagnetic element (106) in contact with this transport layer (104). Due to magneto elastic coupling this generates an effective magnetic field in the ferromagnetic element (106). If the surface acoustic wave has a frequency substantially close to the ferromagnetic resonance (FMR) frequency VFMR the ferromagnetic element (106) is absorbed well and the magnetisation state of the element can be controlled with this FMR frequency. The device can be used in an RF-magnetic resonator, a sensor and a camera. The corresponding method can be used for ultrafast reading-out and switching of magnetic components and in magnetic logic.
摘要翻译：本发明涉及一种用于超快速控制磁性元件的磁化的装置和相应的方法。一种装置（100）包括表面声波产生装置（102），通常在功能上和部分结构上包括在所述SAW发生装置（102）中的传输层（104）和至少一个铁磁元件（106）。生成表面声波并在通常由压电材料组成的传输层（104）中传播。因此，在与该传输层（104）接触的传输层（104）和铁磁元件（106）中诱发应变。由于磁弹性耦合，这在铁磁元件（106）中产生有效的磁场。如果表面声波具有基本上接近铁磁共振（FMR）频率VFMR的频率，则铁磁元件（106）被良好地吸收，并且可以用该FMR频率来控制元件的磁化状态。该器件可用于射频磁共振器，传感器和相机。相应的方法可用于磁性部件的超快速读出和切换以及磁逻辑。

7. 发明申请

WO2004042735A1 BILAYER CMP PROCESS TO IMPROVE SURFACE ROUGHNESS OF MAGNETIC STACK IN MRAM TECHNOLOGY 审中-公开
标题翻译：提高MRAM技术中磁性层的表面粗糙度的BILAYER CMP工艺
公开(公告)号：WO2004042735A1
公开(公告)日：2004-05-21
申请号：PCT/EP2003/012353
申请日：2003-11-05
申请人： INFINEON TECHNOLOGIES AG , IBM INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： COSTRINI, Greg , HUMMEL, John, P. , KRISHNAN, Mahadevaiyer , LOW, Kia-Seng
IPC分类号： G11C11/16
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/26 , H01F10/3254 , H01F41/307 , H01L27/222
摘要： A method for manufacturing a magnetoresistive random access memory (MRAM) cell is disclosed, which alleviates the problem of Neel coupling caused by roughness in the interface between the tunnel junction layer and the magnetic layers. The method comprises depositing first (113) and second (114) barrier layers on the conductor (112), wherein the first barrier layer (113) has a polish rate different from that of the second barrier layer (114). The second barrier layer (114) is then essentially removed by chemical mechanical polishing (CMP), leaving a very smooth and uniform first barrier layer (113). When the magnetic stack (115) is then formed on the polished first barrier layer (113), interfacial roughness is not translated to the tunnel junction layer, and no corruption of magnetization is experienced.
摘要翻译：公开了一种用于制造磁阻随机存取存储器（MRAM）单元的方法，其减轻了由隧道结层和磁性层之间的界面中的粗糙度引起的Neel耦合的问题。该方法包括在导体（112）上沉积第一（113）和第二（114）势垒层，其中第一阻挡层（113）具有与第二阻挡层（114）不同的抛光速率。然后基本上通过化学机械抛光（CMP）去除第二阻挡层（114），留下非常平滑和均匀的第一阻挡层（113）。当磁性堆叠（115）然后形成在抛光的第一阻挡层（113）上时，界面粗糙度不会转变为隧道结层，并且不会发生磁化损坏。

8. 发明申请

WO2005064783A3 TUNEABLE SPIN TORQUE DEVICE FOR GENERATING AN OSCILLATING SIGNAL AND METHOD FOR TUNING 审中-公开
标题翻译：用于产生振荡信号的可调整的自旋转矩设备和用于调谐的方法
公开(公告)号：WO2005064783A3
公开(公告)日：2005-08-11
申请号：PCT/EP2004014816
申请日：2004-12-24
申请人： IMEC INTER UNI MICRO ELECTR , EYCKMANS WOUTER , LAGAE LIESBET
发明人： EYCKMANS WOUTER , LAGAE LIESBET
IPC分类号： G01R33/02 , G10K11/36 , G11C11/14 , G11C11/15 , G11C11/16 , H01F10/193 , H01F10/26 , H01F10/32 , H01L41/00 , H01L43/08 , H03B5/40 , H03B9/14 , H03H2/00 , H03H9/02 , H03H9/135 , H03H9/42 , H03H9/64 , H03K19/16 , H03K19/19
CPC分类号： G01R33/02 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/193 , H01F10/26 , H01F10/3213 , H01F10/3254 , H01F10/3268 , H01L43/08 , H03B15/006 , H03H2/001 , H03H9/02574 , H03H9/02645 , H03H9/02976 , H03H9/135 , H03H9/6486 , H03K19/19
摘要： The present invention is related to a a device and corresponding methods for generating an oscillating signal. The device comprises a means for providing a current of spin polarised charge carriers, a magnetic, e.g. ferromagnetic, excitable layer adapted for receiving the generated current of spin polarised charge carriers thus generating an oscillating signal with a frequency vosc and an integrated means for interacting with said magnetic, e.g. ferromagnetic, excitable layer such that a selection of said oscillation frequency is achieved. No external field needs to be applied to select or tune the frequency. Different types of integrated means can be used, such as e.g. means inducing mechanical stress in the magnetic, e.g. ferromagnetic, excitable layer, means inducing exchange bias interactions and means inducing magnetostatic interactions.
摘要翻译：本发明涉及一种用于产生振荡信号的装置和相应的方法。该装置包括用于提供自旋极化载流子的电流的装置，铁磁可激励层，适于接收所产生的自旋极化电荷载流的电流，从而产生具有频率vosc的振荡信号，以及用于与所述磁场（例如磁场）相互作用的集成装置。铁磁可激发层，从而实现对所述振荡频率的选择。不需要应用外部场来选择或调整频率。可以使用不同类型的集成手段，例如，意味着在磁场中引起机械应力，例如，铁磁可激发层，意味着诱导交换偏置相互作用和诱导静磁相互作用的手段。

9. 发明申请

WO2004001779A1 METHOD OF PRODUCING NIFE ALLOY FILMS HAVING MAGNETIC ANISOTROPY AND MAGNETIC STORAGE MEDIA INCLUDING SUCH FILMS 审中-公开
标题翻译：生产具有磁性异相的生物合金膜和包括这种膜的磁性储存介质的方法
公开(公告)号：WO2004001779A1
公开(公告)日：2003-12-31
申请号：PCT/US2002/030750
申请日：2002-09-26
申请人： SEAGATE TECHNOLOGY LLC
发明人： KIM, Jai-Young , WU, Xiaowei
IPC分类号： H01F41/18
CPC分类号： B82Y25/00 , G11B5/667 , G11B5/851 , H01F10/14 , H01F10/26 , H01F10/3222 , H01F41/18
摘要： A method of fabricating anisotropic magnetic films includes providing a substrate (18), sputtering a layer (24) of Ni x Fe y (where x ranges from 40 to 50 and y = (100-x)) onto a surface (28) of the substrate, and subjecting the layer of Ni x Fe y to a rotating magnetic field (36) during the sputtering deposition process. A magnetic storage medium comprising a substrate (128), a soft magnetic underlayer (126) supported by the substrate, the soft magnetic underlayer including Ni x Fe y (where x ranges from 40 to 50 and y = (100-x)) and having an easy axis in a circumferential direction and a hard axis in a radial direction, and a magnetically hard recording layer (124) supported by the soft magnetic underlayer, is also included.
摘要翻译：一种制造各向异性磁性膜的方法包括提供衬底（18），将NixFey（其中x为40至50，y =（100-x））的层（24）溅射到衬底的表面（28）上，并在溅射沉积工艺期间使NixFey层经受旋转磁场（36）。一种磁存储介质，包括基板（128），由基板支撑的软磁性底层（126），所述软磁性底层包括NixFey（其中x为40至50和y =（100-x）），并且具有容易圆周方向的轴线和径向的硬轴，以及由软磁性底层支撑的磁性硬记录层（124）。

10. 发明申请

WO1997005664A1 MAGNETORESISTANCE ELEMENT AND ITS MANUFACTURE 审中-公开
标题翻译：磁性元件及其制造
公开(公告)号：WO1997005664A1
公开(公告)日：1997-02-13
申请号：PCT/JP1996002120
申请日：1996-07-26
申请人： TAKAHASHI, Migaku
IPC分类号： H01L43/12
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/26 , H01F10/3227 , H01F10/324 , H01F10/3268 , H01F41/302 , H01L43/10 , Y10T428/1129
摘要： A magnetoresistance element for reproducing magnetic signals with higher sensitivity and its manufacturing method. The magnetoresistance element has a structure including alternate layers of ferromagnetic material and nonmagnetic material on a substrate, and the oxygen concentration in the structure is less than 100 wt. ppm. Alternatively, the magnetoresistance element comprises a substrate, a nonmagnetic layer on the substrate, a ferromagnetic layer on the nonmagnetic layer, and an antiferromagnetic layer on the ferromagnetic layer, and the oxygen concentration in the part where the ferromagnetic material layers are laminated with the nonmagnetic material layers in between is less than 100 wt. ppm.
摘要翻译：一种用于再现具有更高灵敏度的磁信号的磁阻元件及其制造方法。磁阻元件具有在基板上包含铁磁材料和非磁性材料的交替层的结构，并且结构中的氧浓度小于100wt。 PPM。或者，磁阻元件包括衬底，衬底上的非磁性层，非磁性层上的铁磁层和铁磁层上的反铁磁层，以及铁磁材料层与非磁性层叠的部分中的氧浓度其间的材料层小于100wt。 PPM。

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